Electronic devices and materials Books

Book SynopsisProvides a comprehensive treatment of semiconductor device physics and technology, with emphasis on modern planar silicon devices. Physical principles are explained by the use of simple physical models and illustrated by experimental measurements.Table of ContentsThe Planar Technology. Solid-State Technology. Vapor-Phase Growth. Thermal Oxidation. Solid-State Diffusion. Semiconductors and Semiconductor Devices. Elements of Semiconductor Physics. Semiconductors under Non-Equilibrium Conditions. p-n Junction. Junction Transistor. Junction Field-Effect Transistors. Surface Effects and Surface-Controlled Devices. Theory of Semiconductor Surfaces. Surface Effects on p-n Junctions. Surface Field-Effect Transistors. Properties of the Silicon-Silicon Dioxide System.

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Book SynopsisContaining the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.Trade Review"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News, Vol. 25, No. 2 June 2001) "Anyone working with these materials will find the up-to-date information summarized in this handbook extremely useful and handy...this handbook has the potential to become on of the most cited reference books in upcoming years." (MRS Bulletin, September 2001)Table of ContentsContributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si_1-xGe_x) (F. Schäffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.

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Book SynopsisVertical Cavity Surface Emitting Lasers (VCSELs) are a type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge emitting semiconductor lasers. This book acts as a practical guide for the modeling of VCSELs. It provides derivations for understanding the operational principles of VCSELs.Trade Review"…very nicely organized…design engineers of VCSELs will find this book the most useful. However, it also provides valuable information to CAD tool designers…" (Optics & Photonics News, June 2005) “…the author’s assessment of the opportunities gives a strong incentive to develop such interest” (Robotica, Vol. 22, 2004)Table of ContentsPreface. Acknowledgments. 1. Vertical Cavity Surface Emitting Lasers - An overview. 2. Simple Design Consideration of Vertical Cavity Surface Emitting Lasers. 3. Modal Characteristics of Vertical Cavity Surface Emitting Lasers. 4. Polarization Properties of Vertical Cavity Surface Emitting Lasers. 5. Thermal Characteristics of Vertical Cavity Surface Emitting Lasers. 6. Electrical Characteristics of Vertical Cavity Surface Emitting Lasers. 7. Direct Modulation of Vertical Cavity Surface Emitting Lasers. 8. Spontaneous Emission of Vertical Cavity Surface Emitting Lasers. 9. Nonlinear Characteristics in Vertical Cavity Surface Emitting Lasers. Index.

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Book SynopsisAn excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. -Ron Wilson, EETimes SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it. -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM''s SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM''s SiGe technology development programs * Explore IBM''s approach to deTrade Review"The text is recommended for engineering libraries serving electrical and computer engineering programs and engineers." (E-STREAMS, October 2004)Table of ContentsContributors. Foreword. Preface. Acknowledgments. Introduction. A Historical Perspective at IBM. Technology Development. Modeling and Characterization. Design Automation and Signal Integrity. Leading-Edge Applications. Appendix. Index. About the Authors.

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Book SynopsisAn interdisciplinary work offering an introduction to the basic principles and operational characteristics of semiconductor sensors. Describes sensor technology, stressing bulk and surface micromachining. Considers a sensor group related to a special physical, chemical or biological input signal. The final chapter deals with integrated sensors.Table of ContentsClassification and Terminology of Sensors (S. Sze). Semiconductor Sensor Technologies (C. Mastrangelo & W. Tang). Acoustic Sensors (M. Motamedi & R. White). Mechanical Sensors (B. Kloeck & N. de Rooij). Magnetic Sensors (H. Baltes & R. Castagnetti). Radiation Sensors (S. Audet & J. Steigerwald). Thermal Sensors (S. Van Herwaarden & G. Meijer). Chemical Sensors (S. Morrison). Biosensors (A. Dewa & W. Ko). Integrated Sensors (K. Najafi, et al.). Appendices. Index.

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Book SynopsisThis Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures Trade Review“The book is well-illustrated and provides an ample bibliography.” (Optics & Photonics News, 4 November 2015) "I strongly recommend this book for those who want to learn device characterization." (IEEE Circuits & Devices Magazine, November/December 2006)Table of ContentsPreface to Third Edition xiii 1 Resistivity 1 1.1 Introduction, 1 1.2 Two-Point Versus Four-Point Probe, 2 1.2.1 Correction Factors, 8 1.2.2 Resistivity of Arbitrarily Shaped Samples, 14 1.2.3 Measurement Circuits, 18 1.2.4 Measurement Errors and Precautions, 18 1.3 Wafer Mapping, 21 1.3.1 Double Implant, 21 1.3.2 Modulated Photoreflectance, 23 1.3.3 Carrier Illumination (CI), 24 1.3.4 Optical Densitometry, 25 1.4 Resistivity Profiling, 25 1.4.1 Differential Hall Effect (DHE), 26 1.4.2 Spreading Resistance Profiling (SRP), 29 1.5 Contactless Methods, 34 1.5.1 Eddy Current, 34 1.6 Conductivity Type, 38 1.7 Strengths and Weaknesses, 40 Appendix 1.1 Resistivity as a Function of Doping Density, 41 Appendix 1.2 Intrinsic Carrier Density, 43 References, 44 Problems, 50 Review Questions, 59 2 Carrier and Doping Density 61 2.1 Introduction, 61 2.2 Capacitance-Voltage (C-V), 61 2.2.1 Differential Capacitance, 61 2.2.2 Band Offsets, 68 2.2.3 Maximum-Minimum MOS-C Capacitance, 71 2.2.4 Integral Capacitance, 75 2.2.5 Mercury Probe Contacts, 76 2.2.6 Electrochemical C–V Profiler (ECV), 77 2.3 Current-Voltage (I-V), 79 2.3.1 MOSFET Substrate Voltage—Gate Voltage, 79 2.3.2 MOSFET Threshold Voltage, 81 2.3.3 Spreading Resistance, 82 2.4 Measurement Errors and Precautions, 82 2.4.1 Debye Length and Voltage Breakdown, 82 2.4.2 Series Resistance, 83 2.4.3 Minority Carriers and Interface Traps, 89 2.4.4 Diode Edge and Stray Capacitance, 90 2.4.5 Excess Leakage Current, 91 2.4.6 Deep Level Dopants/Traps, 91 2.4.7 Semi-Insulating Substrates, 93 2.4.8 Instrumental Limitations, 94 2.5 Hall Effect, 94 2.6 Optical Techniques, 97 2.6.1 Plasma Resonance, 97 2.6.2 Free Carrier Absorption, 98 2.6.3 Infrared Spectroscopy, 99 2.6.4 Photoluminescence (PL), 101 2.7 Secondary Ion Mass Spectrometry (SIMS), 102 2.8 Rutherford Backscattering (RBS), 103 2.9 Lateral Profiling, 104 2.10 Strengths and Weaknesses, 105 Appendix 2.1 Parallel or Series Connection?, 107 Appendix 2.2 Circuit Conversion, 108 References, 109 Problems, 117 Review Questions, 124 3 Contact Resistance and Schottky Barriers 127 3.1 Introduction, 127 3.2 Metal-Semiconductor Contacts, 128 3.3 Contact Resistance, 131 3.4 Measurement Techniques, 135 3.4.1 Two-Contact Two-Terminal Method, 135 3.4.2 Multiple-Contact Two-Terminal Methods, 138 3.4.3 Four-Terminal Contact Resistance Method, 149 3.4.4 Six-Terminal Contact Resistance Method, 156 3.4.5 Non-Planar Contacts, 156 3.5 Schottky Barrier Height, 157 3.5.1 Current-Voltage, 158 3.5.2 Current—Temperature, 160 3.5.3 Capacitance-Voltage, 161 3.5.4 Photocurrent, 162 3.5.5 Ballistic Electron Emission Microscopy (BEEM), 163 3.6 Comparison of Methods, 163 3.7 Strengths and Weaknesses, 164 Appendix 3.1 Effect of Parasitic Resistance, 165 Appendix 3.2 Alloys for Contacts to Semiconductors, 167 References, 168 Problems, 174 Review Questions, 184 4 Series Resistance, Channel Length and Width, and Threshold Voltage 185 4.1 Introduction, 185 4.2 PN Junction Diodes, 185 4.2.1 Current-Voltage, 185 4.2.2 Open-Circuit Voltage Decay (OCVD), 188 4.2.3 Capacitance-Voltage (C–V ), 190 4.3 Schottky Barrier Diodes, 190 4.3.1 Series Resistance, 190 4.4 Solar Cells, 192 4.4.1 Series Resistance—Multiple Light Intensities, 195 4.4.2 Series Resistance—Constant Light Intensity, 196 4.4.3 Shunt Resistance, 197 4.5 Bipolar Junction Transistors, 198 4.5.1 Emitter Resistance, 200 4.5.2 Collector Resistance, 202 4.5.3 Base Resistance, 202 4.6 MOSFETS, 206 4.6.1 Series Resistance and Channel Length–Current-Voltage, 206 4.6.2 Channel Length—Capacitance-Voltage, 216 4.6.3 Channel Width, 218 4.7 MESFETS and MODFETS, 219 4.8 Threshold Voltage, 222 4.8.1 Linear Extrapolation, 223 4.8.2 Constant Drain Current, 225 4.8.3 Sub-threshold Drain Current, 226 4.8.4 Transconductance, 227 4.8.5 Transconductance Derivative, 228 4.8.6 Drain Current Ratio, 228 4.9 Pseudo MOSFET, 230 4.10 Strengths and Weaknesses, 231 Appendix 4.1 Schottky Diode Current-Voltage Equation, 231 References, 232 Problems, 238 Review Questions, 250 5 Defects 251 5.1 Introduction, 251 5.2 Generation-Recombination Statistics, 253 5.2.1 A Pictorial View, 253 5.2.2 A Mathematical Description, 255 5.3 Capacitance Measurements, 258 5.3.1 Steady-State Measurements, 259 5.3.2 Transient Measurements, 259 5.4 Current Measurements, 267 5.5 Charge Measurements, 269 5.6 Deep-Level Transient Spectroscopy (DLTS), 270 5.6.1 Conventional DLTS, 270 5.6.2 Interface Trapped Charge DLTS, 280 5.6.3 Optical and Scanning DLTS, 283 5.6.4 Precautions, 285 5.7 Thermally Stimulated Capacitance and Current, 288 5.8 Positron Annihilation Spectroscopy (PAS), 289 5.9 Strengths and Weaknesses, 292 Appendix 5.1 Activation Energy and Capture Cross-Section, 293 Appendix 5.2 Time Constant Extraction, 294 Appendix 5.3 Si and GaAs Data, 296 References, 301 Problems, 308 Review Questions, 316 6 Oxide and Interface Trapped Charges, Oxide Thickness 319 6.1 Introduction, 319 6.2 Fixed, Oxide Trapped, and Mobile Oxide Charge, 321 6.2.1 Capacitance-Voltage Curves, 321 6.2.2 Flatband Voltage, 327 6.2.3 Capacitance Measurements, 331 6.2.4 Fixed Charge, 334 6.2.5 Gate-Semiconductor Work Function Difference, 335 6.2.6 Oxide Trapped Charge, 338 6.2.7 Mobile Charge, 338 6.3 Interface Trapped Charge, 342 6.3.1 Low Frequency (Quasi-static) Methods, 342 6.3.2 Conductance, 347 6.3.3 High Frequency Methods, 350 6.3.4 Charge Pumping, 352 6.3.5 MOSFET Sub-threshold Current, 359 6.3.6 DC-IV, 361 6.3.7 Other Methods, 363 CONTENTS ix 6.4 Oxide Thickness, 364 6.4.1 Capacitance-Voltage, 364 6.4.2 Current-Voltage, 369 6.4.3 Other Methods, 369 6.5 Strengths and Weaknesses, 369 Appendix 6.1 Capacitance Measurement Techniques, 371 Appendix 6.2 Effect of Chuck Capacitance and Leakage Current, 372 References, 374 Problems, 381 Review Questions, 387 7 Carrier Lifetimes 389 7.1 Introduction, 389 7.2 Recombination Lifetime/Surface Recombination Velocity, 390 7.3 Generation Lifetime/Surface Generation Velocity, 394 7.4 Recombination Lifetime—Optical Measurements, 395 7.4.1 Photoconductance Decay (PCD), 399 7.4.2 Quasi-Steady-State Photoconductance (QSSPC), 402 7.4.3 Short-Circuit Current/Open-Circuit Voltage Decay (SCCD/OCVD), 402 7.4.4 Photoluminescence Decay (PLD), 404 7.4.5 Surface Photovoltage (SPV), 404 7.4.6 Steady-State Short-Circuit Current (SSSCC), 411 7.4.7 Free Carrier Absorption, 413 7.4.8 Electron Beam Induced Current (EBIC), 416 7.5 Recombination Lifetime—Electrical Measurements, 417 7.5.1 Diode Current-Voltage, 417 7.5.2 Reverse Recovery (RR), 420 7.5.3 Open-Circuit Voltage Decay (OCVD), 422 7.5.4 Pulsed MOS Capacitor, 424 7.5.5 Other Techniques, 428 7.6 Generation Lifetime—Electrical Measurements, 429 7.6.1 Gate-Controlled Diode, 429 7.6.2 Pulsed MOS Capacitor, 432 7.7 Strengths and Weaknesses, 440 Appendix 7.1 Optical Excitation, 441 Appendix 7.2 Electrical Excitation, 448 References, 448 Problems, 458 Review Questions, 464 8 Mobility 465 8.1 Introduction, 465 8.2 Conductivity Mobility, 465 8.3 Hall Effect and Mobility, 466 8.3.1 Basic Equations for Uniform Layers or Wafers, 466 8.3.2 Non-uniform Layers, 471 8.3.3 Multi Layers, 474 8.3.4 Sample Shapes and Measurement Circuits, 475 8.4 Magnetoresistance Mobility, 479 8.5 Time-of-Flight Drift Mobility, 482 8.6 MOSFET Mobility, 489 8.6.1 Effective Mobility, 489 8.6.2 Field-Effect Mobility, 500 8.6.3 Saturation Mobility, 502 8.7 Contactless Mobility, 502 8.8 Strengths and Weaknesses, 502 Appendix 8.1 Semiconductor Bulk Mobilities, 503 Appendix 8.2 Semiconductor Surface Mobilities, 506 Appendix 8.3 Effect of Channel Frequency Response, 506 Appendix 8.4 Effect of Interface Trapped Charge, 507 References, 508 Problems, 514 Review Questions, 521 9 Charge-based and Probe Characterization 523 9.1 Introduction, 523 9.2 Background, 524 9.3 Surface Charging, 525 9.4 The Kelvin Probe, 526 9.5 Applications, 533 9.5.1 Surface Photovoltage (SPV), 533 9.5.2 Carrier Lifetimes, 534 9.5.3 Surface Modification, 537 9.5.4 Near-Surface Doping Density, 538 9.5.5 Oxide Charge, 538 9.5.6 Oxide Thickness and Interface Trap Density, 540 9.5.7 Oxide Leakage Current, 541 9.6 Scanning Probe Microscopy (SPM), 542 9.6.1 Scanning Tunneling Microscopy (STM), 543 9.6.2 Atomic Force Microscopy (AFM), 544 9.6.3 Scanning Capacitance Microscopy (SCM), 547 9.6.4 Scanning Kelvin Probe Microscopy (SKPM), 550 9.6.5 Scanning Spreading Resistance Microscopy (SSRM), 553 9.6.6 Ballistic Electron Emission Microscopy (BEEM), 554 9.7 Strengths and Weaknesses, 556 References, 556 Problems, 560 Review Questions, 561 10 Optical Characterization 563 10.1 Introduction, 563 10.2 Optical Microscopy, 564 10.2.1 Resolution, Magnification, Contrast, 565 10.2.2 Dark-Field, Phase, and Interference Contrast Microscopy, 568 10.2.3 Confocal Optical Microscopy, 570 10.2.4 Interferometric Microscopy, 572 10.2.5 Defect Etches, 575 10.2.6 Near-Field Optical Microscopy (NFOM), 575 10.3 Ellipsometry, 579 10.3.1 Theory, 579 10.3.2 Null Ellipsometry, 581 10.3.3 Rotating Analyzer Ellipsometry, 582 10.3.4 Spectroscopic Ellipsometry (SE), 583 10.3.5 Applications, 584 10.4 Transmission, 585 10.4.1 Theory, 585 10.4.2 Instrumentation, 587 10.4.3 Applications, 590 10.5 Reflection, 592 10.5.1 Theory, 592 10.5.2 Applications, 594 10.5.3 Internal Reflection Infrared Spectroscopy, 598 10.6 Light Scattering, 599 10.7 Modulation Spectroscopy, 600 10.8 Line Width, 601 10.8.1 Optical-Physical Methods, 601 10.8.2 Electrical Methods, 603 10.9 Photoluminescence (PL), 604 10.10 Raman Spectroscopy, 608 10.11 Strengths and Weaknesses, 610 Appendix 10.1 Transmission Equations, 611 Appendix 10.2 Absorption Coefficients and Refractive Indices for Selected Semiconductors, 613 References, 615 Problems, 621 Review Questions, 626 11 Chemical and Physical Characterization 627 11.1 Introduction, 627 11.2 Electron Beam Techniques, 628 11.2.1 Scanning Electron Microscopy (SEM), 629 11.2.2 Auger Electron Spectroscopy (AES), 634 11.2.3 Electron Microprobe (EMP), 639 11.2.4 Transmission Electron Microscopy (TEM), 645 11.2.5 Electron Beam Induced Current (EBIC), 649 11.2.6 Cathodoluminescence (CL), 651 11.2.7 Low-Energy, High-Energy Electron Diffraction (LEED), 652 11.3 Ion Beam Techniques, 653 11.3.1 Secondary Ion Mass Spectrometry (SIMS), 654 11.3.2 Rutherford Backscattering Spectrometry (RBS), 659 11.4 X-Ray and Gamma-Ray Techniques, 665 11.4.1 X-Ray Fluorescence (XRF), 666 11.4.2 X-Ray Photoelectron Spectroscopy (XPS), 668 11.4.3 X-Ray Topography (XRT), 671 11.4.4 Neutron Activation Analysis (NAA), 674 11.5 Strengths and Weaknesses, 676 Appendix 11.1 Selected Features of Some Analytical Techniques, 678 References, 678 Problems, 686 Review Questions, 687 12 Reliability and Failure Analysis 689 12.1 Introduction, 689 12.2 Failure Times and Acceleration Factors, 690 12.2.1 Failure Times, 690 12.2.2 Acceleration Factors, 690 12.3 Distribution Functions, 692 12.4 Reliability Concerns, 695 12.4.1 Electromigration (EM), 695 12.4.2 Hot Carriers, 701 12.4.3 Gate Oxide Integrity (GOI), 704 12.4.4 Negative Bias Temperature Instability (NBTI), 711 12.4.5 Stress Induced Leakage Current (SILC), 712 12.4.6 Electrostatic Discharge (ESD), 712 12.5 Failure Analysis Characterization Techniques, 713 12.5.1 Quiescent Drain Current (IDDQ), 713 12.5.2 Mechanical Probes, 715 12.5.3 Emission Microscopy (EMMI), 715 12.5.4 Fluorescent Microthermography (FMT), 718 12.5.5 Infrared Thermography (IRT), 718 12.5.6 Voltage Contrast, 718 12.5.7 Laser Voltage Probe (LVP), 719 12.5.8 Liquid Crystals (LC), 720 12.5.9 Optical Beam Induced Resistance Change (OBIRCH), 721 12.5.10 Focused Ion Beam (FIB), 723 12.5.11 Noise, 723 12.6 Strengths and Weaknesses, 726 Appendix 12.1 Gate Currents, 728 References, 730 Problems, 737 Review Questions, 740 Appendix 1 List of Symbols 741 Appendix 2 Abbreviations and Acronyms 749 Index 755

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Book SynopsisFailure Mechanisms in Semiconductor Devices Second Edition E. Ajith Amerasekera Texas Instruments Inc., Dallas, USA Farid N. Najm University of Illinois at Urbana-Champaign, USA Since the successful first edition of Failure Mechanisms in Semiconductor Devices, semiconductor technology has become increasingly important. The high complexity of today''s integrated circuits has engendered a demand for greater component reliability. Reflecting the need for guaranteed performance in consumer applications, this thoroughly updated edition includes more detailed material on reliability modelling and prediction. The book analyses the main failure mechanisms in terms of cause, effects and prevention and explains the mathematics behind reliability analysis. The authors detail methodologies for the identification of failures and describe the approaches for building reliability into semiconductor devices. Their thorough yet accessible text covers the physics of failure mechanisms from the semiconducTable of ContentsReliability Mathematics. Principal Failure Mechanisms. Failure Mechanisms in Technologies and Circuits. Reliability Testing. Reliability Prediction. Screening. Failure Analysis. Quality Assurance. Appendix. Indexes.

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Book SynopsisChemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.Table of ContentsChemical Beam Epitaxy: An Introduction (G. Davies, et al.). Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol). Precursors for Chemical Beam Epitaxy (D. Bohling). Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord). Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy). CBE InP-Based Materials and Devices (W. Tsang & T. Chiu). MOMBE of Antiminides and Growth Model (H. Asahi). Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa). Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki). Gas Source Molecular Beam Epitaxy (L. Goldstein). Dopants and Dopant Incorporation (T. Whitaker & T. Martin). Selected Area Epitaxy (H. Heinecke & G. Davies). Chemical Beam Etching (W. Tsang & T. Chiu). Laser-Assisted Epitaxy (H. Sugiura). Index.

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Book SynopsisThe market for single chip microprocessors is huge and their performance continues to increase, driven by the on-going demand for more powerful applications, particularly in the control and signal processing domains.Table of ContentsARCHITECTURES: OVERVIEW AND COMPLEXITY. Problem Statement. Trends in Computer Architecture. Bus Complexity. Complexity of Instruction Level Parallel Processors. TRANSPORT TRIGGERING CONCEPT. From VLIW to TTA. An Example Transport Triggered Processor. THE DESIGN SPACE OF TRANSPORT TRIGGERED ARCHITECTURES. Transport Design Space. Function Unit Design Space. Register Unit Design Space. Exception Support. ARCHITECTURE EVALUATION AND SYNTHESIS. Evaluation of Architecture Parameters. Automatic Synthesis of Transport Triggered Processors. Summary and Perspective. Appendices. Glossary. References. Index.

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Book SynopsisThis book presents a comprehensive overview of the most recent advances in the field, including the way such structures are grown, how experiments on the structures have clarified long-standing theoretical predictions, how the structures are characterized, and the performance of devices developed from the structures.Trade Review"It covers the way structures are grown, how they are characterized..." (La Doc Sti, Vol. 369, January 1999)Table of ContentsFabrication Techniques for Quantum Dots. Self-Organization Concepts on Crystal Surfaces. Growth and Structural Characterization of Self-Organized Quantum Dots. Modeling of Ideal and Real Quantum Dots. Electronic and Optical Properties. Electrical Properties. Photonic Devices. References. Index.

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Book SynopsisFault analysis of highly-integrated semiconductor circuits has become an indispensable discipline in the optimization of product quality. Integrated Circuit Failure Analysis describes state-of-the-art procedures for exposing suspected failure sites in semiconductor devices. The author adopts a hands-on problem-oriented approach, founded on many years of practical experience, complemented by the explanation of basic theoretical principles. Features include: Advanced methods in device preparation and technical procedures for package inspection and semiconductor reliability. Illustration of chip isolation and step-by-step delayering of chips by wet chemical and modern plasma dry etching techniques. Particular analysis of bipolar and MOS circuits, although techniques are equally relevant to other semiconductors. Advice on the choice of suitable laboratory equipment. Numerous photographs and drawings providing guidance for checking results. Focusing on modern techniques, this practical textTable of ContentsPurpose and Importance of Preparatory Semiconductor Analysis. Opening the Package: Chip Insulation. Wet Chemical Etching Procedures for Removing Layers of the ChipStructure. Crystallographic Etching in the Silicon. Dry Etching in the Plasma. Microsectioning Technology, Metallography. Outlook. Appendices. Index.

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Book SynopsisA growing need for the application of power semiconductor devices in robotics and automation systems has arisen over the 1990s. This text gives the power semiconductor device user an understanding of the structures, function, characteristics and features of power semiconductor devices.Table of ContentsProperties of Semiconductors. Elementary Semiconductor Structures. Devices, Fabrication and Their Modelling. Power Semiconductor Device Applications. Power Diodes. Bipolar Junction Transistors. Thyristors: Basic Operating Principles. Thyristor Types and Applications. Static Induction Power Devices. Power MOSFETs. Power Bipolar-MOS (BIPMOS) Devices. Power Modules and Integrated Structures. Conditions for Reliable Operation. Future Materials and Devices. Appendix.

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Book SynopsisThis 1993 book shows how formal logic can be used to specify the behaviour of hardware designs and reason about their correctness. The book is based in part on the author's own research as well as on graduate teaching. Thus it can be used to accompany courses on hardware verification and as a resource for research workers.Table of Contents1. Introduction; 2. Higher order logic and the HOL system; 3. Hardware verification using higher order logic; 4. Abstraction; 5. Data abstraction; 6. Temporal abstraction; 7. Abstraction between models; 8. Conclusions and future work; Appendices; References.

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Book SynopsisIntroduces the principles underlying low-dimensional semiconductors by describing two systems in detail: the two-dimensional electron gas and the quantum well. It will be valuable to advanced undergraduate and beginning graduate physics or electrical engineering students studying low-dimensional systems or heterostructure device physics.Table of ContentsPreface; Introduction; 1. Foundations; 2. Electrons and phonons in crystals; 3. Heterostructures; 4. Quantum wells and low-dimensional systems; 5. Tunnelling transport; 6. Electric and magnetic fields; 7. Approximate methods; 8. Scattering rates: the Golden Rule; 9. The two-dimensional electron gas; 10. Optical properties of quantum wells; Appendix 1. Table of physical constants; Appendix 2. Properties of important semiconductors; Appendix 3. Properties of GaAs-AlAs alloys at room temperature; Appendix 4. Hermite's equation: harmonic oscillator; Appendix 5. Airy functions: triangular well; Appendix 6. Kramers-Kronig relations and response functions; Bibliography.

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Book SynopsisThe composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book inTable of ContentsPreface; Introduction; 1. Foundations; 2. Electrons and phonons in crystals; 3. Heterostructures; 4. Quantum wells and low-dimensional systems; 5. Tunnelling transport; 6. Electric and magnetic fields; 7. Approximate methods; 8. Scattering rates: the Golden Rule; 9. The two-dimensional electron gas; 10. Optical properties of quantum wells; Appendix 1. Table of physical constants; Appendix 2. Properties of important semiconductors; Appendix 3. Properties of GaAs-AlAs alloys at room temperature; Appendix 4. Hermite's equation: harmonic oscillator; Appendix 5. Airy functions: triangular well; Appendix 6. Kramers-Kronig relations and response functions; Bibliography.

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Book SynopsisModern electronic devices and novel materials often derive their extraordinary properties from the intriguing, complex behavior of large numbers of electrons forming what is known as an electron liquid. This book provides an in-depth introduction to the physics of the interacting electron liquid in a broad variety of systems, including metals, semiconductors, artificial nano-structures, atoms and molecules. One, two and three dimensional systems are treated separately and in parallel. Different phases of the electron liquid, from the Landau Fermi liquid to the Wigner crystal, from the Luttinger liquid to the quantum Hall liquid are extensively discussed. Both static and time-dependent density functional theory are presented in detail. Although the emphasis is on the development of the basic physical ideas and on a critical discussion of the most useful approximations, the formal derivation of the results is highly detailed and based on the simplest, most direct methods.Trade Review'All in all, this is an excellent book with the bonus of a useful selection of exercises to test the reader's understanding. … for those with stamina, and a zest for getting to the bottom of how nature really operates, study of this book will certainly repay the effort.' Chemistry World'This book contains a wealth of information that will repay diligent study, much of it not to be found together in any other graduate textbook.' The Times Higher Education Supplement'The book, unquestionably attractive to the more experienced reader… is an invaluable source of material for many-body theory as a part of condensed matter physics graduate courses. The book contains sophisticated and important concepts, such as spin-dependant effective electronic interactions, a subject virtually impossible to find in other textbooks. Every graduate student and researcher studying condensed matter theory should obtain a copy of this exceptional text.' Physics TodayTable of Contents1. Introduction to the electron liquid; 2. The Hartree-Fock approximation; 3. Linear response theory; 4. Linear response of independent electrons; 5. Linear response of an interacting electron liquid; 6. The perturbative calculation of linear response functions; 7. Density functional theory; 8. The normal Fermi liquid; 9. The one-dimensional electron gas and the Luttinger liquid; 10. The two-dimensional electron gas at high magnetic field.

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Book SynopsisCovering a number of important subjects in quantum optics, this textbook is an excellent introduction for advanced undergraduate and beginning graduate students, familiarizing readers with the basic concepts and formalism as well as the most recent advances. The first part of the textbook covers the semi-classical approach where matter is quantized, but light is not. It describes significant phenomena in quantum optics, including the principles of lasers. The second part is devoted to the full quantum description of light and its interaction with matter, covering topics such as spontaneous emission, and classical and non-classical states of light. An overview of photon entanglement and applications to quantum information is also given. In the third part, non-linear optics and laser cooling of atoms are presented, where using both approaches allows for a comprehensive description. Each chapter describes basic concepts in detail, and more specific concepts and phenomena are presented in Trade Review'The advantage of this book is to give both [the semi-classical and the full quantum] approaches, starting with the first, illustrated by several simple examples, and introducing progressively the second, clearly showing why it is essential for understanding certain phenomena … I believe that this challenge to present and to illustrate both approaches in a single book has been taken up successfully … I have the highest admiration for [the authors'] enthusiasm, their scientific rigor, their ability to give simple and precise physical explanations, and their quest to illuminate clearly the difficult points of the subject without oversimplification.' Claude Cohen-Tannoudji, from the Foreword'… genuinely very impressive … every section has been lovingly crafted, the text is beautifully constructed and the theory explained more comprehensibly than almost any other text I could name. Each section is graced by numerous insightful … comments from the authors, giving the reader the impression of guidance by the hand of a teacher you can utterly trust. For a start, this book has possibly the finest, clearest and most extensive introduction to perturbative transitions I have seen … I am certain that this beautifully produced and written book, with an apparently faultless production, is destined to be a classic.' Professor David L. Andrews, University of East AngliaTable of ContentsPart I. Semi-Classical Description of Matter-Light Interaction: 1. The evolution of interacting quantum systems; 2. The semi-classical approach: atoms interacting with a classical electromagnetic field; 3. Principles of lasers; Part II. Quantum Description of Light and its Interaction with Matter: 4. Quantisation of free radiation; 5. Free quantum radiation; 6. Interaction of an atom with the quantised electromagnetic field; Part III. Applying Both Approaches: 7. Non-linear optics: from the semi-classical approach to quantum effects; 8. Laser manipulation of atoms: from incoherent atom optics to atom lasers; References; Index.

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Book SynopsisThin film mechanical behavior and stress presents a technological challenge for materials scientists, physicists and engineers. Describing fundamental concepts with practical case studies, highly illustrated, thorough referencing and containing numerous homework problems, this book will be essential for graduate courses on thin films and the classic reference for researchers.Trade Review'The book is a landmark in a rich subject which has seen many developments over the past decade. In addition to being beautifully written, the book contains many illustrations, micrographs, and problems for students. The book will serve as a graduate text, as well as a comprehensive monograph everyone working in the field will want to own.' Professor John W. Hutchinson, Harvard University'Freund and Suresh have written a masterpiece on thin film materials that will become a classic reference for this newly developed field. Their book provides an organized and beautifully written exposition of the subject of thin film mechanical behavior. For the first time there is a single starting point for the field. The book brings together materials and mechanics aspects of thin films effortlessly, reflecting the authors' expertise in joining these fields of science and engineering.' Professor William D. Nix, Stanford University'I would heartily recommend this book as an essential read for anyone working in any area of thin film deposition.' Materials World'Thin Film Materials will prove a valuable resource. It contains a wealth of useful references and good indexes. It is richly illustrated, and there are good exercises after each chapter. For a graduate course in the field, it will be hard to beat. And if the authors are right, there will be a growing demand for such courses.' The Times Higher Education SupplementTable of Contents1. Introduction and overview; 2. Film stress and substrate curvature; 3. Stress in anisotropic and patterned films; 4. Delamination and fracture; 5. Film buckling, bulging and peeling; 6. Dislocation formation in epitaxial systems; 7. Dislocation interactions and strain relaxation; 8. Equilibrium and stability of surfaces; 9. The role of stress in mass transport.

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