Electronic devices and materials Books

Book SynopsisSemiconductor devices are ubiquitous in todaya s world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design.Table of ContentsPreface. Acknowledgments. A Brief Review of the Basic Equations. The Symmetry of the Crystal Lattice. The Theory of Energy Bands in Crystals. Imperfections of Ideal Crystal Structure. Equilibrium Statistics for Electrons and Holes. Self-Consistent Potentials and Dielectric Properties. Scattering Theory. The Boltzmann Transport Equation. Generation-Recombination. The Heterojunction Barrier. The Device Equations of Shockley and Stratton. Numerical Device Simulations. Diodes. Laser Diodes. Transistors. Future Semiconductor Devices. Appendix A: Tunneling and the Golden Rule. Appendix B: The One Band Approximation. Appendix C: Temperature Dependence of the Band Structure. Appendix D: Hall Effect and Magnetoresistance. Appendix E: The Power Balance Equation. Appendix F: The Self-Consistent Potential at a Heterojunction. Appendix G: Schottky Barrier Transport. Index. About the Author.

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Book Synopsis Network revolutions of the past have shaped the present and set the stage for the revolution we are experiencing today In an era of seemingly instant change, it''s easy to think that today''s revolutionsin communications, business, and many areas of daily lifeare unprecedented. Today''s changes may be new and may be happening faster than ever before. But our ancestors at times were just as bewildered by rapid upheavals in what we now call networksthe physical links that bind any society together. In this fascinating book, former FCC chairman Tom Wheeler brings to life the two great network revolutions of the past and uses them to help put in perspective the confusion, uncertainty, and even excitement most people face today. The first big network revolution was the invention of movable-type printing in the fifteenth century. This book, its millions of predecessors, and even such broad trends as the Reformation, the Renaissance, and the multiple scientific revo

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Book SynopsisFocusing on helping researchers and engineers involved in III-V compound semiconductor thin film growth and processing, this text shows the mechanism of degradation, detailing the major degradation modes of optical devices fabricated from three different systems.Table of ContentsIntroduction. Materials and Structures of Optical Devices: Materials for Optical Devices. Structures of Optical Devices. Crystal Growth: Preparation of Materials by LPE. Preparation of Materials by MOVPE. Preparation of Materials by MBE. Fabrication Processes of Optical Devices: Fabrication Processes. Device Characteristics and Life Testing: Device Characteristics. Life Testing of Devices. Evaluation Techniques for III-V Compound Semiconductors and Degraded Optical Devices: Classification of Evaluation Techniques. Visual Inspection. Chemical Etching. Optical Measurement. Electrical Measurement. Structural Evaluation of Semiconductors by Transmission Electron Microscopy. Analytical Techniques. Flow Chart for Evaluation of Degraded Optical Devices. Materials Issues in III-V Compound Semiconductors I -- Defect Generation: Classification of Defects. Growth-induced Defects. Process-induced defects. Materials Issues in III-V Compound Semiconductors I -- Thermal Stability of III-V Alloy Semiconductors: Composition Modulated Structures. Ordered Structures. Influence of Modulated Structures on the Properties and Reliability of Optical Devices. Classification of Degradation Modes and Degradation Phenomena in Optical Devices: Classification of Degradation Modes in the Life Testing of Lasers and LEDs. Classification of Degradation Phenomena in Lasers. Degradation in LEDs. Influence of Stress on the Device Degradation. Degradation I -- Rapid Degradation: Rapid Degradation in GaAlAs/GaAs Optical Devices. Rapid Degradation in InGaAsP/InP Optical Devices. Rapid Degradation in InGaAsP/InGaP Optical Devices. Comparison of Recombination-enhanced Defect Reaction in Different III-V Materials. Elimination of the Rapid Degradation. Degradation II -- Gradual Degradation: Gradual Degradation in GaAlAs DH LEDs. Gradual Degradation in InGaAsP/InP DH LEDs. Comparison of Gradual Degradation in GaAlAs/GaAs and In GaAsP/InP Optical Devices. Enhancement of Gradual Degradation by Internal Stress in GaAlAs Visible Lasers. Degradation III -- Catastrophic Failure: Catastrophic Failure in Lasers. Catastrophic Failure in LEDs. Elimination of Catastrophic Failure.

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Book SynopsisOffering practical advice on a range of wavelengths, this highly accessible and self-contained book presents a broad overview of astronomical instrumentation, techniques, and tools. Drawing on the notes and lessons of the authorsâ established graduate course, the text reviews basic concepts in astrophysics, spectroscopy, and signal analysis. It includes illustrative problems and case studies and aims to provide readers with a toolbox for observational capabilities across the electromagnetic spectrum and the knowledge to understand which tools are best suited to different observations. It is an ideal guide for undergraduates and graduates studying astronomy.Features: Presents a self-contained account of a highly complex subject. Offers practical advice and instruction on a wide range of wavelengths and tools. Includes case studies and problems for further learning opportunities. Solutions ManuTable of Contents1. Review of Electromagnetic Radiation. 2. Astrophysical Radiation. 3. Interaction of Electromagnetic Radiation with Matter. 4. Telescopes and Optical Systems. 5. Key Concepts in Astronomical Measurement. 6. Sensitivity and Noise in Electromagnetic Detection. 7. Astronomical Spectroscopy. 8. Radio Instrumentation. 9. Far Infrared to Millimetre Wavelength Instrumentation. 10. Infrared to UV Instrumentation. 11 X-ray, -ray and Astro-particle Detection.

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Book SynopsisPhotonic Instrumentation: Sensing and Measuring with Lasers is designed as a source for university-level courses covering the essentials of laser-based instrumentation, and as a useful reference for working engineers. Photonic instruments have very desirable features like non-contact operation and unparalleled sensitivity. They have quickly become a big industrial success, passing unaffected through the bubble years and, not any less important, well-established methods in measurement science. This book offers coverage of the most proven instruments, with a balanced treatment of the optical and electronic aspects involved. It also attempts to present the basic principles, develop the guidelines of design and evaluate the ultimate limits of performances set by noise.The instruments surveyed include: alignment instruments, such as wire diameter and particle size analyzers, telemeters, laser interferometers and self-mixing interferometers, Table of ContentsChapter 1. Introduction. Chapter 2. Alignment, Pointing, and Sizing Instruments. Chapter 3. Laser Telemeters. Chapter 4. Laser Interferometry. Chapter 5. Self-Mixing Interferometry. Chapter 6. Speckle-Pattern and Applications. Chapter 7. Velocimeters. Chapter 8. Gyroscopes. Chapter 9. Optical Fiber Sensors. Chapter 10. Quantum Sensing. Appendix A0. Nomenclature. Appendix A1. Lasers for Instrumentation. Appendix A2. Optical Interferometers. Appendix A3. Propagation through the Atmosphere. Appendix A4. Propagation and Diffraction. Appendix A5. Source of Information on Photonic Instrumentation. Index.

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Book SynopsisAdvanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metaloxidesemiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications.In order to improve readers' learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductTable of Contents1. Future Prospective beyond CMOS Technology: From Silicon-based devices to alternate devices. 2. Design and Challenges in Tunnel FET. 3. Modelling Approaches to Field Effect Transistor. 4. Dynamics of Trap States in Organic Thin-Film Transistors (OTFT’s). 5. An Insightful Study and Investigation of Tunnel FET and its Application in the Biosensing Domain. 6. Optimization of Hetero buried Oxide Pocket doped Gate engineered Tunnel FET structure. 7. Comprehensive Analysis of NC-L-TFET. 8. Thermal Behavior of Si-doped MoS2 based Step Structure DG-TFET. 9. Implementation of Logic gates using Step-Channel TFET. 10. CMOS-based SRAM with Odd Transistors Configuration: An Extensive Study. 11. Gate-All-Around Nanosheet FET device simulation methodology using Sentaurus TCAD. 12. Device Simulation process on TCAD

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Book SynopsisParticles, Fields, Space-Time: From Thomson's Electron to Higgs' Boson explores the concepts, ideas, and experimental results that brought us from the discovery of the first elementary particle in the end of the 19th century to the completion of the Standard Model of particle physics in the early 21st century. The book concentrates on disruptive events and unexpected results that fundamentally changed our view of particles and how they move through space-time. It separates the mathematical and technical details from the narrative into focus boxes, so that it remains accessible to non-scientists, yet interesting for those with a scientific background who wish to further their understanding. The text presents and explains experiments and their results wherever appropriate. This book is of interest to a general audience, but also to students studying particle physics, physics teachers at all levels, and scientists with a recreational curiosity towards the subject.For this

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Book SynopsisDiscover the techniques of analog filter designs and their utilization in a large number of practical applications such as audio/video signal processing, biomedical instrumentation and antialiasing/reconstruction filters. Covering high frequency filter design like active R and active C filters, the author tries to present the subject in a simpler way as a base material for analog filter designs, as well as for advanced study of continuous-time filter designs, and allied filter design areas of current-mode (CM) and switched capacitor filters. With updated basic analog filter design approaches, the book will provide a better choice to select appropriate design technique for a specific application. Focussing mainly on continuous time domain techniques, which forms the base of all other techniques, this is an essential reading for undergraduate students. Numerous solved examples, practical applications and case studies on audio/video devices, medical instrumentation, control and antialiasiTable of ContentsList of figures; List of tables; Preface; Acknowledgements; 1. Analog filter: concepts; 2. First- and second-order filters; 3. Magnitude approximations; 4. Delay: approximation and optimization; 5. Frequency and impedance transformations; 6. Sensitivity of active networks; 7. Single amplifier second-order filters; 8. Multi amplifier second-order filter sections; 9. Direct form synthesis: element substitution and operational simulation; 10. Cascade approach: optimization and tuning; 11. Amplification and filtering in biomedical applications; 12. Audio signal processing and anti-aliasing filters; 13. Follow the leader feedback filters; 14. Switched capacitor circuits; 15. Operational transconductance amplifier-C filters; 16. Current conveyors and CDTA (current differencing transconductance amplifiers) based filters; 17. Active R and active C filters; References; Practice problems; Index.

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Book SynopsisThis book provides a detailed presentation of modern non-equilibrium field-theoretical methods, applied to examples ranging from biophysics to the kinetics of superfluids and superconductors. Suitable for graduate students and researchers in condensed matter physics, this new edition includes updated content and problems throughout.Trade ReviewPraise for the first edition 'Field Theory of Non-Equilibrium Systems, written by theoretical condensed-matter physicist Alex Kamenev, is a lively pedagogical exposition of the Keldysh technique based on functional integration … It is meant for advanced graduate students and professionals who have not had prior exposure to the technique but would like to learn it. Experts in the field may also enjoy the diversity of the subjects covered and the clarity with which they are presented. Thanks to those features, Field Theory of Non-Equilibrium Systems is a welcome introduction to the field and could well become a classic.' Vojkan Jaksic, Physics TodayTable of Contents1. Introduction; Part I. Systems with Few Degrees of Freedom: 2. Bosons; 3. Single-particle quantum mechanics; 4. Classical stochastic systems; 5. Driven-dissipative systems; Part II. Bosonic and Classical Fields: 6. Bosonic fields; 7. Dynamics of collisionless plasma; 8. Kinetics of Bose condensates; 9. Dynamics of phase transitions; Part III. Fermions: 10. Fermions; 11. Kinetic theory and hydrodynamics; 12. Aspects of kinetic theory; 13. Quantum transport; Part IV. Disordered Metals and Superconductors: 14. Disordered fermionic systems; 15. Mesoscopic effects; 16. Electron–electron interactions in disordered metals; 17. Dynamics of disordered superconductors; 18. Electron–phonon interactions; References; Index.

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Book SynopsisThe first book written on this important topic, Metal Chalcogenide Semiconductor Nanostructures and Their Applications in Renewable Energy provides an in-depth examination of the properties and synthesis of a class of nanomaterials essential to renewable energy manufacturing.Table of ContentsPreface xiii Part 1: Renewable Energy Conversion Systems 1 1 Introduction: An Overview of Metal Chalcogenide Nanostructures for Renewable Energy Applications 3 Ahsanulhaq Qurashi 1.1 Introduction 3 1.2 Metal Chalcogenide Nanostructures 7 1.3 Growth of Metal Chalcogenide Nanostructures 8 1.4 Applications of Metal Chalcogenide Nanostructures 16 1.5 Summary and Future Perspective 18 References 18 2 Renewable Energy and Materials 23 Muhammad Asif 2.1 Global Energy Scenario 23 2.2 Role of Renewable Energy in Sustainable Energy Future 25 2.3 Importance of Materials Role in Renewable Energy 27 References 30 3 Sustainable Feed Stock and Energy Futures 33 H. Idriss 3.1 Introduction 33 3.2 Discussion 34 References 41 Part 2: Synthesis of Metal Chalcogenide Nanostructures 43 4 Metal-Selenide Nanostructures: Growth and Properties 45 Ramin Yousefi 4.1 Introduction 45 4.2 Growth and Properties of Different Groups of Metal-Selenide Nanostructures 48 4.3 Metal Selenides from III?VI Semiconductors 57 4.4 Metal Selenides from IV?VI Semiconductors 61 4.5 Metal Selenides from V?VI Semiconductors 66 4.6 Metal Selenides from Transition Metal (TM) 69 4.7 Ternary Metal-Selenide Compounds 75 4.8 Summary and Future Outlook 78 Acknowledgment 79 References 79 5 Growth Mechanism and Surface Functionalization of Metal Chalcogenides Nanostructures 83 Muhammad Nawaz Tahir, Jugal Kishore Sahoo, Faegheh Hoshyargar, and Wolfgang Tremel 5.1 Introduction 84 5.2 Synthetic Methods for Layered Metal Chalcogenides 89 5.3 Surface Functionalization of Layered Metal Dichalcogenide Nanostructures 102 5.4 Applications of Inorganic Nanotubes and Fullerenes 110 References 113 6 Optical and Structural Properties of Metal Chalcogenide Semiconductor Nanostructures 123 Ihsan-ul-Haq Toor and Shafique Khan 6.1 Optical Properties of Metal Chalcogenides Semiconductor Nanostructures 124 6.2 Structural Properties and Defects of Metal Chalcogenide Semiconductor Nanostructures 133 References 142 7 Structural and Optical Properties of CdS Nanostructures 147 Y. Al-Douri, Abdulwahab S. Z. Lahewil, U. Hashim, and N. M. Ahmed 7.1 Introduction 147 7.2 Nanomaterials 150 7.3 II-VI Semiconductors 152 7.4 Sol-Gel Process 155 7.5 Structural and Surface Characterization of Nanostructured CdS 156 7.6 Optical Properties 159 7.7 Conclusion 161 Acknowledgments 162 References 162 Part 3: Applications of Metal Chalcogenides Nanostructures 165 8 Metal Sulfide Photocatalysts for Hydrogen Generation by Water Splitting under Illumination of Solar Light 167 Dr. Zhonghai Zhang 8.1 Introduction 167 8.2 Photocatalytic Water Splitting on Single Metal Sulfide 169 8.3 Photocatalytic Water Splitting on Multi-metal Sulfide 173 8.4 Metal Sulfides Solid-Solution Photocatalysts 180 8.5 Summary and Future Outlook 184 References 184 9 Metal Chalcogenide Hierarchical Nanostructures for Energy Conversion Devices 189 Ramin Yousefi, Farid Jamali-Sheini, and Ali Khorsand Zak 9.1 Introduction 190 9.2 Main Characteristics of Cd-Chalcogenide Nanocrystals (CdE; E = S, Se, Te) 192 9.3 Different Methods to Grow Cd-Chalcogenide Nanocrystals 192 9.4 Solar Energy Conversion 212 9.5 Cd-Chalcogenide Nanocrystals as Solar Energy Conversion 219 9.6 Summary and Future Outlook 230 References 230 10 Metal Chalcogenide Quantum Dots for Hybrid Solar Cell Applications 233 Mir Waqas Alam and Ahsanulhaq Qurashi 10.1 Introduction 233 10.2 Chemical Synthesis of Quantum Dots 235 10.3 Quantum Dots Solar cell 238 10.4 Summary and Future Prospects 243 References 243 11 Solar Cell Application of Metal Chalcogenide Semiconductor Nanostructures 247 Hongjun Wu 11.1 Introduction 247 11.2 Chalcogenide-Based Thin-Film Solar Cells 248 11.3 CdTe-Based Solar Cells 249 11.4 Cu(In,Ga)(S,Se)2 (CIGS)-Based Solar Cells 251 11.5 Metal Chalcogenides-Based Quantum-Dots-Sensitized Solar Cells (QDSSCs) 253 11.6 Hybrid Metal Chalcogenides Nanostructure-Conductive Polymer Composite Solar Cells 257 11.7 Conclusions 261 References 262 12 Chalcogenide-Based Nanodevices for Renewable Energy 269 Y. Al-Douri 12.1 Introduction 269 12.2 Renewable Energy 272 12.3 Nanodevices 274 12.4 Density Functional Theory 277 12.5 Analytical Studies 278 12.6 Conclusion 284 Acknowledgments 285 References 285 13 Metal Tellurides Nanostructures for Thermoelectric Applications 289 Salman B. Inayat 13.1 Introduction 290 13.2 Thermoelectric Microdevice Fabricated by a MEMS-Like Electrochemical Process 290 13.3 Bi2Te3-Based Flexible Micro Thermoelectric Generator 292 13.4 High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys 293 13.5 Nano-manufactured Thermoelectric Glass Windows for Energy Efficient Building Technologies 294 13.6 Conclusion 296 References 297

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Book SynopsisThe development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live.Table of ContentsPreface ix 1. Thermodynamics of Homogeneous and Heterogeneous Semiconductor Systems 1 1.1 Introduction 1 1.2 Basic Principles 2 1.3 Phases and Their Properties 7 1.3.1 Structural Order of a Phase 7 1.4 Equations of State of Thermodynamic Systems 11 1.4.1 Thermodynamic Transformations and Functions of State 11 1.4.2 Work Associated with a Transformation, Entropy and Free Energy 12 1.4.3 Chemical Potentials 14 1.4.4 Free Energy and Entropy of Spontaneous Processes 15 1.4.5 Effect of Pressure on Phase Transformations, Polymorphs/Polytypes Formation and Their Thermodynamic Stability 16 1.4.6 Electrochemical Equilibria and Electrochemical Potentials of Charged Species 21 1.5 Equilibrium Conditions of Multicomponent Systems Which Do Not React Chemically 23 1.6 Thermodynamic Modelling of Binary Phase Diagrams 28 1.6.1 Introductory Remarks 28 1.6.2 Thermodynamic Modelling of Complete and Incomplete Miscibility 29 1.6.3 Thermodynamic Modelling of Intermediate Compound Formation 40 1.6.4 Retrograde Solubility, Retrograde Melting and Spinodal Decomposition 40 1.7 Solution Thermodynamics and Structural and Physical Properties of Selected Semiconductor Systems 43 1.7.1 Introductory Remarks 43 1.7.2 Au-Ag and Au-Cu Alloys 45 1.7.3 Silicon and Germanium 49 1.7.4 Silicon-Germanium Alloys 53 1.7.5 Silicon- and Germanium-Binary Alloys with Group III and Group IV Elements 55 1.7.6 Silicon-Tin and Germanium-Tin Alloys 61 1.7.7 Carbon and Its Polymorphs 62 1.7.8 Silicon Carbide 67 1.7.9 Selenium-Tellurium Alloys 69 1.7.10 Binary and Pseudo-binary Selenides and Tellurides 71 1.7.11 Arsenides, Phosphides and Nitrides 81 1.8 Size-Dependent Properties, Quantum Size Effects and Thermodynamics of Nanomaterials 93 Appendix 98 Use of Electrochemical Measurements for the Determination of the Thermodynamic Functions of Semiconductors 98 References 103 2. Point Defects in Semiconductors 117 2.1 Introduction 117 2.2 Point Defects in Ionic Solids: Modelling the Electrical Conductivity of Ionic Solids by Point Defects-Mediated Charge Transfer 119 2.3 Point Defects and Impurities in Elemental Semiconductors 127 2.3.1 Introduction 127 2.3.2 Vacancies and Self-Interstitials in Semiconductors with the Diamond Structure: an Attempt at a Critical Discussion of Their Thermodynamic and Transport Properties 129 2.3.3 Effect of Defect–Defect Interactions on Diffusivity: Trap-and-Pairing Limited Diffusion Processes 145 2.3.4 Light Impurities in Group IV Semiconductors: Hydrogen, Carbon, Nitrogen, Oxygen and Their Reactivity 153 2.4 Defects and Non-Stoichiometry in Compound Semiconductors 167 2.4.1 Structural and Thermodynamic Properties 167 2.4.2 Defect Identification in Compound Semiconductors 171 2.4.3 Non-Stoichiometry in Compound Semiconductors 171 References 181 3. Extended Defects in Semiconductors and Their Interactions with Point Defects and Impurities 195 3.1 Introduction 195 3.2 Dislocations in Semiconductors with the Diamond Structure 196 3.2.1 Geometrical Properties 196 3.2.2 Energy of Regular Straight Dislocations 201 3.2.3 Dislocation Motion 203 3.2.4 Dislocation Reconstruction 205 3.2.5 Electronic Structure of Dislocations in Si and Ge, Theoretical Studies and Experimental Evidences 208 3.3 Dislocations in Compound Semiconductors 215 3.3.1 Electronic Structure of Dislocations in Compound Semiconductors 216 3.4 Interaction of Defects and Impurities with Extended Defects 219 3.4.1 Introduction 219 3.4.2 Thermodynamics of Defect Interactions with Extended Defects 220 3.4.3 Thermodynamics of Interaction of Neutral Defects and Impurities with EDs 221 3.4.4 Kinetics of Interaction of Point Defects, Impurities and Extended Defects: General Concepts 228 3.4.5 Kinetics of Interaction Reactions: Reaction Limited Processes 230 3.4.6 Kinetics of Interaction Reactions: Diffusion-Limited Reactions 230 3.5 Interaction of Atomic Defects with Extended Defects: Theoretical and Experimental Evidence 232 3.5.1 Interaction of Point Defects with Extended Defects 232 3.5.2 Hydrogen-Dislocation Interaction in Silicon 233 3.5.3 Interaction of Oxygen with Dislocations 235 3.6 Segregation of Impurities at Surfaces and Interfaces 236 3.6.1 Introduction 236 3.6.2 Grain Boundaries in Polycrystalline Semiconductors 236 3.6.3 Structure of Grain Boundaries and Their Physical Properties 239 3.6.4 Segregation of Impurities at Grain Boundaries and Their Influence on Physical Properties 241 3.7 3D Defects: Precipitates, Bubbles and Voids 243 3.7.1 Thermodynamic and Structural Considerations 243 3.7.2 Oxygen and Carbon Segregation in Silicon 246 3.7.3 Silicides Precipitation 249 3.7.4 Bubbles and Voids 249 References 251 4. Growth of Semiconductor Materials 265 4.1 Introduction 265 4.2 Growth of Bulk Solids by Liquid Crystallization 266 4.2.1 Growth of Single Crystal and Multicrystalline Ingots by Liquid Phase Crystallization 268 4.2.2 Growth of Single Crystals or Multicrystalline Materials by Liquid Crystallization Processes: Impact of Environmental Interactions on the Chemical Quality 274 4.2.3 Growth of Bulk Solids by Liquid Crystallization Processes: Solubility of Impurities in Semiconductors and Their Segregation 287 4.2.4 Growth of Bulk Solids by Liquid Crystallization Processes: Pick-Up of Impurities 290 4.2.5 Constitutional Supercooling 295 4.2.6 Growth Dependence of the Impurity Pick-Up and Concentration Profiling 298 4.2.7 Purification of Silicon by Smelting with Al 299 4.3 Growth of Ge-Si Alloys, SiC, GaN, GaAs, InP and CdZnTe from the Liquid Phase 300 4.3.1 Growth of Si-Ge Alloys 301 4.3.2 Growth of SiC from the Liquid Phase 303 4.3.3 Growth of GaN from the Liquid Phase 304 4.3.4 Growth of GaAs, InP, ZnSe and CdZnTe 309 4.4 Single Crystal Growth from the Vapour Phase 318 4.4.1 Generalities 318 4.4.2 Growth of Silicon, ZnSe and Silicon Carbide from the Vapour Phase 319 4.4.3 Epitaxial Growth of Single Crystalline Layers of Elemental and Compound Semiconductors 323 4.5 Growth of Poly/Micro/Nano-Crystalline Thin Film Materials 332 4.5.1 Introduction 332 4.5.2 Growth of Nanocrystalline/Microcrystalline Silicon 334 4.5.3 Growth of Silicon Nanowires 337 4.5.4 Growth of Films of CdTe and of Copper Indium (Gallium) Selenide (CIGS) 342 References 345 5. Physical Chemistry of Semiconductor Materials Processing 363 5.1 Introduction 363 5.2 Thermal Annealing Processes 364 5.2.1 Thermal Decomposition of Non-stoichiometric Amorphous Phases for Nanofabrication Processes 367 5.2.2 Other Problems of a Thermodynamic or Kinetic Nature 369 5.3 Hydrogen Passivation Processes 372 5.4 Gettering and Defect Engineering 376 5.4.1 Introduction 376 5.4.2 Thermodynamics of Gettering 377 5.4.3 Physics and Chemistry of Internal Gettering 378 5.4.4 Physics and Chemistry of External Gettering 382 5.5 Wafer Bonding 390 References 391 Index 399

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Book SynopsisComprehensive coverage of organic electronics, including fundamental theory, basic properties, characterization methods, device physics, and future trends Organic semiconductor materials have vast commercial potential for a wide range of applications, from self-emitting OLED displays and solid-state lighting to plastic electronics and organic solar cells. As research in organic optoelectronic devices continues to expand at an unprecedented rate, organic semiconductors are being applied to flexible displays, biosensors, and other cost-effective green devices in ways not possible with conventional inorganic semiconductors. Organic Semiconductors for Optoelectronics is an up-to-date review of the both the fundamental theory and latest research and development advances in organic semiconductors. Featuring contributions from an international team of experts, this comprehensive volume covers basic properties of organic semiconductors, characterization techniques, device physics, and futurTable of ContentsPreface – to be supplied by H.Naito 1 Electronic Structures of Organic Semiconductors Kazuyoshi Tanaka 2 Charge carrier transport Hiroyoshi Naito 3 Theory of Optical Properties of Organic Semiconductors Jai Singh, Monishka Rita Narayan and David Ompong 4 Light absorption and emission properties of organic semiconductors Takashi Kobayashi, Takashi Nagase, and Hiroyoshi Naito 5 Photoluminescence Spectroscopy Hiroyoshi Naito 6 Time-of-flight method for determining the drift mobility in organic semiconductors Masahiro Funahashi 7 Microwave and Terahertz Spectroscopy Akinori Saeki 8 Intrinsic and extrinsic transport in crystalline organic semiconductors: electron-spin-resonance study for characterization of localized states. A. S. Mishchenko 9 Second Harmonic Generation Spectroscopy Takaaki Manaka and Mitsumasa Iwamoto 10 Device Physics of organic field-effect transistors Hiroyuki Matsui 11 Spontaneous orientation polarization in organic light-emitting diodes and its influence on charge injection, accumulation, and degradation properties Yutaka Noguchi, Hisao Ishii, Lars Jäger, Tobias D. Schmidt, Wolfgang Brütting 12 Advanced molecular design for organic light emitting diode emitters based on horizontal molecular orientation and thermally activated delayed fluorescence Li Zhao, DaeHyeon Kim, Jean-Charles Ribierre, Takeshi Komino and Chihaya Adachi 13 Organic field effect transistors integrated circuits Mayumi Uno 14 Naphthobisthiadiazole-based semiconducting polymers for high-efficiency organic photovoltaics Itaru Osaka and Kazuo Takimiya 15 Plasmonics for light-emitting and photovoltaic devices Koichi Okamoto

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Book SynopsisThis book has been designed as a result of the author's teaching experiences; students in the courses came from various disciplines and it was very difficult to prescribe a suitable textbook, not because there are no books on these topics, but because they are either too exhaustive or very elementary. This book, therefore, includes only relevant topics in the fundamentals of the physics of semiconductors and of electrochemistry needed for understanding the intricacy of the subject of photovoltaic solar cells and photoelectrochemical (PEC) solar cells. The book provides the basic concepts of semiconductors, p:n junctions, PEC solar cells, electrochemistry of semiconductors, and photochromism. Researchers, engineers and students engaged in researching/teaching PEC cells or knowledge of our sun, its energy, and its distribution to the earth will find essential topics such as the physics of semiconductors, the electrochemistry of semiconductors, p:n junctions, Schottky junctions,Table of ContentsForeword xv Preface xvii 1 Our Universe and the Sun 1 1.1 Formation of the Universe 1 1.2 Formation of Stars 2 1.2.1 Formation of Energy in the Sun 3 1.2.2 Description of the Sun 6 1.2.3 Transfer of Solar Rays through the Ozone Layer 6 1.2.4 Transfer of Solar Layers through Other Layers 7 1.2.5 Effect of Position of the Sun vis-à-vis the Earth 8 1.2.6 Distribution of Solar Energy 8 1.2.7 Solar Intensity Calculation 8 1.3 Summary 12 Reference 12 2 Solar Energy and Its Applications 13 2.1 Introduction to a Semiconductor 14 2.2 Formation of a Compound 14 2.2.1 A Classical Approach 14 2.2.2 Why Call It a Band and Not a Level? 15 2.2.3 Quantum Chemistry Approach 17 2.2.3.1 Wave Nature of an Electron in a Fixed Potential 17 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential 19 2.2.3.3 Bloch’s Solution to the Wave Function of Electrons under Variable Potentials 20 2.2.3.3 Concept of a Forbidden Gap in a Material 22 2.2.4 Band Model to Explain Conductivity in Solids 25 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation? 26 2.2.4.2 Density of States 28 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands? 29 2.2.5 Useful Deductions 31 2.2.5.1 Extrinsic Semiconductor 33 2.2.5.2 Role of Dopants in the Semiconductor 36 2.3 Quantum Theory Approach to Explain the Effect of Doping 37 2.3.1 A Mathematical Approach to Understanding This Problem 39 2.3.2 Representation of Various Energy Levels in a Semiconductor 40 2.4 Types of Carriers in a Semiconductor 42 2.4.1 Majority and Minority Carriers 42 2.4.2 Direction of Movement of Carriers in a Semiconductor 42 2.5 Nature of Band Gaps in Semiconductors 44 2.6 Can the Band Gap of a Semiconductor Be Changed? 45 2.7 Summary 47 Further Reading 47 3 Theory of Junction Formation 49 3.1 Flow of Carriers across the Junction 49 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap? 49 3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram? 52 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line? 52 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface? 52 3.2 Representing Energy Levels Graphically 54 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors 56 3.4 Nature of Potential at the Interface 56 3.4.1 Does Any Current Flow through the Interface? 56 3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors 58 3.4.2.1 Flow of Carriers from n-Type to p-Type 59 3.4.2.2 Flow of Carriers from p-Type to n-Type 60 3.4.2.3 Flow of Current due to Holes 60 3.4.2.4 Flow of Current due to Electrons 61 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor? 62 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors 63 3.4.3.2 Flow of Majority Carriers from n- to p-Type 63 3.4.3.3 Flow of Minority Carrier from p- to n-Type Semiconductors 64 3.4.3.3 Flow of Minority Carriers from n- to p-Type Semiconductors 64 3.5 Expression for Saturation (or Exchange) Current I0 67 3.5.1 Factors on Which Diffusion Length Depends 70 3.6 Contact Potential θ 71 3.7 Width of the Space Charge Region 75 3.8 Metal–Schottky Junction 81 3.8.1 Current–Voltage Characteristics for Metal–Schottky Junctions 84 3.8.2 Saturation Current for Metal–Schottky Junctions 87 3.9 Effect of Light on p:n Junctions 90 3.10 Factors to Be Considered in Illuminating the p:n Junction 94 3.10.1 Grids for Collecting the Charges 95 3.10.2 Ohmic Contact on the Back Side of the Junction 96 3.11 Types of p:n Junctions 97 3.12 A Photoelectrochemical Cell 97 3.13 Summary 100 Further Reading 100 4 Effect of Illumination of a PEC Cell 101 4.1 Effect of Light on the Depletion Layer of the Semiconductor—Electrolyte Junction 101 4.1.1 Origin of Photopotential 102 4.1.2 Origin of Photocurrent 104 4.2 The Fate of Photogenerated Carriers 105 4.3 Magnitude of the Photocurrent 106 4.4 Gartner Model for Photocurrent 108 4.4.1 Photocurrent due to Photogenerated Carriers in the Space Charge Region 109 4.4.2 Photocurrent due to Photogenerated Carriers in the Diffusion Region 109 4.4.3 Application of the Gartner Model 111 4.4.4 When α Is Constant 112 4.4.5 When w Is Kept Constant 115 4.4.6 Lifetime of Carriers and Their Mobility 118 4.5 Carrier Recombination 118 4.5.1 Significance of the Lifetime of Carriers 119 4.5.2 Effect of Recombination Center on the Magnitude of Photocurrent 120 4.5.3 Origin of Recombination Centers 121 4.6 A Mathematical Treatment for the Lifetime of Carriers 122 4.7 Effect of Illumination on Fermi Level-Quasi Fermi Level 124 4.8 Solar Cell Performance 130 4.9 Current—Voltage Characteristics of a Solar Cell 135 4.10 The Equivalent Circuit of a Solar Cell 138 4.11 Solar Cell Efficiency 139 4.11.1 Absorption Efficiency αλ 141 4.11.2 Generation Efficiency gλ 141 4.11.3 Collection Efficiency Cλ 141 4.11.4 Current Efficiency Qλ 142 4.11.5 Voltage Factor and Fill Factor 142 4.11.6 Analytical Methods for J-V Characteristics of a Solar Cell 144 4.11.7 Back Wall Cell 145 4.12 Ohmic Contact 147 4.13 Defects in Solids 148 4.13.1 Bulk Defects 150 4.13.2 Surface Structure 150 4.14 Summary 153 Further Reading 153 References 154 5 Electrochemistry of the Metal–Electrolyte Interface 157 5.1 What Is a Metal? 158 5.2 What Is the Structure of Electrolyte and Water Molecules in an Aqueous Solution? 158 5.3 What Happens When a Metal Is Immersed in Solution? 160 5.4 Existence of a Double Layer Near the Metal–Electrolyte Interface 160 5.5 Influence of Concentration of Electrolyte on Helmholtz and Diffusion Potentials 166 5.6 Impact of Charge Accumulation at Various Regions 166 5.7 Electron Transfer and Its Impact on Potential Barrier 171 5.8 Butler–Volmer Approach to Electrochemical Reaction 181 5.9 Significance of Symmetry Factor β 191 5.10 Electrochemical Corrosion at the Metal–Electrolyte Interface 194 5.11 Summary 199 Further Reading 199 References 199 6 Electrochemistry of the Semiconductor–Electrolyte Interface 201 6.1 Difference between Metal and Semiconductor 201 6.1.1 Hydration of Electrolytes 202 6.1.2 Effect of Hydrogen Bond 203 6.2 Gaussian Distribution of the Potential Energy of Electrolytes 203 6.3 Capacitance at the Semiconductor–Electrolyte Interface 212 6.4 Stability of the Semiconductor 216 6.5 Modifying the Surface of Low Band Gap Materials 223 6.6 Summary 225 References 225 7 Impedance Studies 227 7.1 Types of AC Circuits 228 7.2 Significance of Vector Analysis 230 7.3 Impedance Measurement Techniques 234 7.3.1 Audio Frequency Bridges 234 7.3.2 Transformer Ratio Arms Bridge 236 7.3.3 Berberian–Cole Bridge Technique 237 7.3.4 Potentiostatic Measurement 238 7.3.5 Oscilloscope Technique 239 7.4 AC Impedance Plots and Data Analysis 242 7.4.1 Nyquist Plot 242 7.4.2 Bode Plot 243 7.4.3 Randles Plot 244 7.5 Equivalent Circuit Representation of a Simple System 245 7.6 Equivalent Circuit Representation for Electro-chemical Systems 246 7.7 Procedure for Running an Experiment 248 7.8 Semiconductor Interface 250 7.9 Summary 253 Further Reading 254 References 254 8 Photoelectrochemical Solar Cell 257 8.1 Classification of Photoelectrochemical Cells Based on the Energetics of the Reactions 263 8.2 Solar Chargeable Battery 264 8.3 Electrolyte-(Ohmic)-Semiconductor-Electrolyte (Schottky) Junction 273 8.3.1 On the Illuminated Side of Fe2O3 275 8.3.2 On the Dark Side of the Semiconductor—Compartment II 276 8.4 Synthesis of Value-Added Products 280 8.5 Summary 283 References 283 9 Photoeletrochromism 285 9.1 Photochromic Glasses 287 9.2 Electrochromism 291 9.2.1 Types of Chromogenic Materials 292 9.2.2 Electrolytes 294 9.2.3 Electrode Materials 294 9.2.4 Reservoir 294 9.3 Electrochromic Devices and Their Applications 295 9.4 Imaging Employing a Semiconductor Photo-electrode 301 9.4.1 Image-Forming Step 302 9.4.2 Image-Vanishing Step 302 9.5 Summary 303 References 303 10 Dye-Sensitized Solar Cells 305 10.1 The Dye-Sensitized Cell 306 10.2 Flexible Polymer Solar Cell 308 10.3 Summary 310 References 310 Index 313

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Book SynopsisAMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status ofand latest developments intransparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semicondTable of ContentsPreface xv Series Editor’s Foreword xvii About the Editors xviii List of Contributors xix Part I Introduction 1 1.1 Transparent Amorphous Oxide Semiconductors for Display Applications 3Hideo Hosono 1.1.1 Introduction to Amorphous Semiconductors as Thin-Film Transistor (TFT) Channels 3 1.1.2 Historical Overview 4 1.1.3 Oxide and Silicon 6 1.1.4 Transparent Amorphous Oxide Semiconductors 6 1.1.4.1 Electronic Structures 6 1.1.4.2 Materials 8 1.1.4.3 Characteristic Carrier Transport Properties 9 1.1.4.4 Electronic States 10 1.1.5 P-Type Oxide Semiconductors for Display Applications 13 1.1.5.1 Oxides of Transition Metal Cations with an Electronic Configuration of (n−1)d 10 ns 0 (n = 4or5) 13 1.1.5.2 Oxides of Metal Cations with an Electronic Configuration of ns 2 13 1.1.5.3 Oxides of Metal Cations with an Electronic Configuration of nd 6 14 1.1.6 Novel Amorphous Oxide Semiconductors 15 1.1.7 Summary and Outlook 17 References 18 1.2 Transparent Amorphous Oxide Semiconductors 21Hideya Kumomi 1.2.1 Introduction 21 1.2.2 Technical Issues and Requirements of TFTs for AM-FPDs 21 1.2.2.1 Field-Effect Mobility 21 1.2.2.2 Off-State Leakage Current and On/Off Current Ratio 23 1.2.2.3 Stability and Reliability 23 1.2.2.4 Uniformity 23 1.2.2.5 Large-Area Devices by Large-Area Mother-Glass Substrates 24 1.2.2.6 Low-Temperature Fabrication and Flexibility 24 1.2.3 History, Features, Uniqueness, Development, and Applications of AOS-TFTs 24 1.2.3.1 History 24 1.2.3.2 Features and Uniqueness 25 1.2.3.3 Applications 27 1.2.3.4 Development and Products of AM-FPDs 28 1.2.4 Summary 29 References 30 Part II Fundamentals 31 2 Electronic Structure and Structural Randomness 33Julia E. Medvedeva, Bishal Bhattarai, and D. Bruce Buchholz 2.1 Introduction 33 2.2 Brief Description of Methods and Approaches 35 2.2.1 Computational Approach 35 2.2.2 Experimental Approach 36 2.3 The Structure and Properties of Crystalline and Amorphous In 2 O 3 36 2.4 The Structure and Properties of Crystalline and Amorphous SnO 2 43 2.5 The Structure and Properties of Crystalline and Amorphous ZnO 46 2.6 The Structure and Properties of Crystalline and Amorphous Ga 2 O 3 52 2.7 Role of Morphology in Structure–Property Relationships 57 2.8 The Role of Composition in Structure–Property Relationships: IGO and IGZO 64 2.9 Conclusions 69 References 70 3 Electronic Structure of Transparent Amorphous Oxide Semiconductors 73John Robertson and Zhaofu Zhang 3.1 Introduction 73 3.2 Mobility 73 3.3 Density of States 74 3.4 Band Structures of n-Type Semiconductors 78 3.5 Instabilities 81 3.6 Doping Limits and Finding Effective Oxide Semiconductors 86 3.7 OLED Electrodes 88 3.8 Summary 89 References 89 4 Defects and Relevant Properties 93Toshio Kamiya, Kenji Nomura, Keisuke Ide, and Hideo Hosono 4.1 Introduction 93 4.2 Typical Deposition Condition 93 4.3 Overview of Electronic Defects in AOSs 94 4.4 Origins of Electron Donors 96 4.5 Oxygen- and Hydrogen-Related Defects and Near-VBM States 98 4.6 Summary 102 References 102 5 Amorphous Semiconductor Mobility Physics and TFT Modeling 105John F. Wager 5.1 Amorphous Semiconductor Mobility: An Introduction 105 5.2 Diffusive Mobility 106 5.3 Density of States 110 5.4 TFT Mobility Considerations 111 5.5 TFT Mobility Extraction, Fitting, and Model Validation 112 5.6 Physics-Based TFT Mobility Modeling 118 5.7 Conclusions 121 References 122 6 Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder 125A. V. Nenashev, F. Gebhard, K. Meerholz, and S. D. Baranovskii 6.1 Introduction 125 6.2 Band Transport via Extended States in the Random-Barrier Model (RBM) 126 6.2.1 Deficiencies of the Rate-Averaging Approach: Electrotechnical Analogy 127 6.2.2 Percolation Approach to Charge Transport in the RBM 129 6.3 Random Band-Edge Model (RBEM) for Charge Transport in AOSs 131 6.4 Percolation Theory for Charge Transport in the RBEM 133 6.4.1 From Regional to Global Conductivities in Continuum Percolation Theory 133 6.4.2 Averaging Procedure by Adler et al. 135 6.5 Comparison between Percolation Theory and EMA 136 6.6 Comparison with Experimental Data 137 6.7 Discussion and Conclusions 140 6.7.1 Textbook Description of Charge Transport in Traditional Crystalline Semiconductors (TCSs) 140 6.7.2 Results of This Chapter for Charge Transport in Amorphous Oxide Semiconductors (AOSs) 141 Acknowledgments 141 References 141 7 State and Role of Hydrogen in Amorphous Oxide Semiconductors 145Hideo Hosono and Toshio Kamiya 7.1 Introduction 145 7.2 Concentration and Chemical States 145 7.3 Carrier Generation and Hydrogen 150 7.3.1 Carrier Generation by H Injection at Low Temperatures 150 7.3.2 Carrier Generation and Annihilation by Thermal Treatment 151 7.4 Energy Levels and Electrical Properties 153 7.5 Incorporation and Conversion of H Impurities 154 7.6 Concluding Remarks 155 Acknowledgments 156 References 156 Part III Processing 159 8 Low-Temperature Thin-Film Combustion Synthesis of Metal-Oxide Semiconductors: Science and Technology 161Binghao Wang, Wei Huang, Antonio Facchetti, and Tobin J. Marks 8.1 Introduction 161 8.2 Low-Temperature Solution-Processing Methodologies 162 8.2.1 Alkoxide Precursors 162 8.2.2 Microwave-Assisted Annealing 165 8.2.3 High-Pressure Annealing 165 8.2.4 Photonic Annealing 165 8.2.4.1 Laser Annealing 166 8.2.4.2 Deep-Ultraviolet Illumination 168 8.2.4.3 Flash Lamp Annealing 170 8.2.5 Redox Reactions 170 8.3 Combustion Synthesis for MO TFTs 171 8.3.1 n-Type MO TFTs 172 8.3.2 p-Type MO TFTs 178 8.4 Summary and Perspectives 180 Acknowledgments 180 References 181 9 Solution-Processed Metal-Oxide Thin-Film Transistors for Flexible Electronics 185Hyun Jae Kim 9.1 Introduction 185 9.2 Fundamentals of Solution-Processed Metal-Oxide Thin-Film Transistors 187 9.2.1 Deposition Methods for Solution-Processed Oxide Semiconductors 187 9.2.1.1 Coating-Based Deposition Methods 190 9.2.1.2 Printing-Based Deposition Methods 191 9.2.2 The Formation Mechanism of Solution-Processed Oxide Semiconductor Films 194 9.3 Low-Temperature Technologies for Active-Layer Engineering of Solution-Processed Oxide TFTs 196 9.3.1 Overview 196 9.3.2 Solution Modulation 197 9.3.2.1 Alkoxide Precursors 198 9.3.2.2 pH Adjustment 199 9.3.2.3 Combustion Reactions 199 9.3.2.4 Aqueous Solvent 199 9.3.3 Process Modulation 201 9.3.3.1 Photoactivation Process 201 9.3.3.2 High-Pressure Annealing (HPA) Process 202 9.3.3.3 Microwave-Assisted Annealing Process 204 9.3.3.4 Plasma-Assisted Annealing Process 204 9.3.4 Structure Modulation 205 9.3.4.1 Homojunction Dual-Active or Multiactive Layer 206 9.3.4.2 Heterojunction Dual- or Multiactive Layer 206 9.4 Applications of Flexible Electronics with Low-Temperature Solution-Processed Oxide TFTs 208 9.4.1 Flexible Displays 208 9.4.2 Flexible Sensors 208 9.4.3 Flexible Integrated Circuits 209 References 209 10 Recent Progress on Amorphous Oxide Semiconductor Thin-Film Transistors Using the Atomic Layer Deposition Technique 213Hyun-Jun Jeong and Jin-Seong Park 10.1 Atomic Layer Deposition (ALD) for Amorphous Oxide Semiconductor (AOS) Applications 213 10.1.1 The ALD Technique 213 10.1.2 Research Motivation for ALD AOS Applications 215 10.2 AOS-TFTs Based on ALD 217 10.2.1 Binary Oxide Semiconductor TFTs Based on ALD 217 10.2.1.1 ZnO-TFTs 217 10.2.1.2 InOx-TFTs 218 10.2.1.3 SnOx-TFTs 218 10.2.2 Ternary and Quaternary Oxide Semiconductor TFTs Based on ALD 220 10.2.2.1 Indium–Zinc Oxide (IZO) and Indium–Gallium Oxide (IGO) 220 10.2.2.2 Zinc–Tin Oxide (ZTO) 223 10.2.2.3 Indium–Gallium–Zinc Oxide (IGZO) 223 10.2.2.4 Indium–Tin–Zinc Oxide (ITZO) 226 10.3 Challenging Issues of AOS Applications Using ALD 226 10.3.1 p-Type Oxide Semiconductors 226 10.3.1.1 Tin Monoxide (SnO) 228 10.3.1.2 Copper Oxide (cu x O) 229 10.3.2 Enhancing Device Performance: Mobility and Stability 230 10.3.2.1 Composition Gradient Oxide Semiconductors 230 10.3.2.2 Two-Dimensional Electron Gas (2DEG) Oxide Semiconductors 231 10.3.2.3 Spatial and Atmospheric ALD for Oxide Semiconductors 234 References 234 Part IV Thin-Film Transistors 239 11 Control of Carrier Concentrations in AOSs and Application to Bulk-Accumulation TFTs 241Suhui Lee and Jin Jang 11.1 Introduction 241 11.2 Control of Carrier Concentration in a-IGZO 242 11.3 Effect of Carrier Concentration on the Performance of a-IGZO TFTs with a Dual-Gate Structure 247 11.3.1 Inverted Staggered TFTs 247 11.3.2 Coplanar TFTs 251 11.4 High-Drain-Current, Dual-Gate Oxide TFTs 252 11.5 Stability of Oxide TFTs: PBTS, NBIS, HCTS, Hysteresis, and Mechanical Strain 259 11.6 TFT Circuits: Ring Oscillators and Amplifier Circuits 266 11.7 Conclusion 270 References 270 12 Elevated-Metal Metal-Oxide Thin-Film Transistors: A Back-Gate Transistor Architecture with Annealing-Induced Source/Drain Regions 273Man Wong, Zhihe Xia, and Jiapeng li 12.1 Introduction 273 12.1.1 Semiconducting Materials for a TFT 274 12.1.1.1 Amorphous Silicon 274 12.1.1.2 Low-Temperature Polycrystalline Silicon 274 12.1.1.3 MO Semiconductors 275 12.1.2 TFT Architectures 276 12.2 Annealing-Induced Generation of Donor Defects 279 12.2.1 Effects of Annealing on the Resistivity of IGZO 279 12.2.2 Microanalyses of the Thermally Annealed Samples 283 12.2.3 Lateral Migration of the Annealing-Induced Donor Defects 284 12.3 Elevated-Metal Metal-Oxide (EMMO) TFT Technology 286 12.3.1 Technology and Characteristics of IGZO EMMO TFTs 287 12.3.2 Applicability of EMMO Technology to Other MO Materials 291 12.3.3 Fluorinated EMMO TFTs 292 12.3.4 Resilience of Fluorinated MO against Hydrogen Doping 296 12.3.5 Technology and Display Resolution Trend 298 12.4 Enhanced EMMO TFT Technologies 301 12.4.1 3-EMMO TFT Technology 302 12.4.2 Self-Aligned EMMO TFTs 307 12.5 Conclusion 309 Acknowledgments 310 References 310 13 Hot Carrier Effects in Oxide-TFTs 315Mami N. Fujii, Takanori Takahashi, Juan Paolo Soria Bermundo, and Yukiharu Uraoka 13.1 Introduction 315 13.2 Analysis of Hot Carrier Effect in IGZO-TFTs 315 13.2.1 Photoemission from IGZO-TFTs 315 13.2.2 Kink Current in Photon Emission Condition 318 13.2.3 Hot Carrier–Induced Degradation of a-IGZO-TFTs 318 13.3 Analysis of the Hot Carrier Effect in High-Mobility Oxide-TFTs 322 13.3.1 Bias Stability under DC Stresses in a High-Mobility IWZO-TFT 322 13.3.2 Analysis of Dynamic Stress in Oxide-TFTs 323 13.3.3 Photon Emission from the IWZO-TFT under Pulse Stress 323 13.4 Conclusion 328 References 328 14 Carbon-Related Impurities and NBS Instability in AOS-TFTs 333Junghwan Kim and Hideo Hosono 14.1 Introduction 333 14.2 Experimental 334 14.3 Results and Discussion 334 14.4 Summary 337 References 339 Part V TFTs and Circuits 341 15 Oxide TFTs for Advanced Signal-Processing Architectures 343Arokia Nathan, Denis Striakhilev, and Shuenn-Jiun Tang 15.1 Introduction 343 15.1.1 Device–Circuit Interactions 343 15.2 Above-Threshold TFT Operation and Defect Compensation: AMOLED Displays 345 15.2.1 AMOLED Display Challenges 345 15.2.2 Above-Threshold Operation 347 15.2.3 Temperature Dependence 347 15.2.4 Effects of Process-Induced Spatial Nonuniformity 349 15.2.5 Overview of External Compensation for AMOLED Displays 351 15.3 Ultralow-Power TFT Operation in a Deep Subthreshold (Near Off-State) Regime 354 15.3.1 Schottky Barrier TFTs 355 15.3.2 Device Characteristics and Small Signal Parameters 358 15.3.3 Common Source Amplifier 360 15.4 Oxide TFT-Based Image Sensors 362 15.4.1 Heterojunction Oxide Photo-TFTs 362 15.4.2 Persistent Photocurrent 364 15.4.3 All-Oxide Photosensor Array 365 References 366 16 Device Modeling and Simulation of TAOS-TFTs 369Katsumi Abe 16.1 Introduction 369 16.2 Device Models for TAOS-TFTs 369 16.2.1 Mobility Model 369 16.2.2 Density of Subgap States (DOS) Model 371 16.2.3 Self-Heating Model 372 16.3 Applications 373 16.3.1 Temperature Dependence 373 16.3.2 Channel-Length Dependence 373 16.3.3 Channel-Width Dependence 375 16.3.4 Dual-Gate Structure 378 16.4 Reliability 379 16.5 Summary 381 Acknowledgments 381 References 382 17 Oxide Circuits for Flexible Electronics 383Kris Myny, Nikolaos Papadopoulos, Florian De Roose, and Paul Heremans 17.1 Introduction 383 17.2 Technology-Aware Design Considerations 383 17.2.1 Etch-Stop Layer, Backchannel Etch, and Self-Aligned Transistors 384 17.2.1.1 Etch-Stop Layer 384 17.2.1.2 Backchannel Etch 385 17.2.1.3 Self-Aligned Transistors 385 17.2.1.4 Comparison 386 17.2.2 Dual-Gate Transistors 386 17.2.2.1 Stack Architecture 386 17.2.2.2 Effect of the Backgate 388 17.2.3 Moore’s Law for TFT Technologies 389 17.2.3.1 Cmos 389 17.2.3.2 Thin-Film Electronics Historically 389 17.2.3.3 New Drivers for Thin-Film Scaling: Circuits 390 17.2.3.4 L-Scaling 391 17.2.3.5 W and L Scaling 391 17.2.3.6 Overall Lateral Scaling 391 17.2.3.7 Oxide Thickness and Supply Voltage Scaling 391 17.2.4 Conclusion 392 17.3 Digital Electronics 392 17.3.1 Communication Chips 392 17.3.2 Complex Metal-Oxide-Based Digital Chips 395 17.4 Analog Electronics 396 17.4.1 Thin-Film ADC Topologies 396 17.4.2 Imager Readout Peripherals 397 17.4.3 Healthcare Patches 399 17.5 Summary 400 Acknowledgments 400 References 400 Part VI Display and Memory Applications 405 18 Oxide TFT Technology for Printed Electronics 407Toshiaki Arai 18.1 OLEDs 407 18.1.1 OLED Displays 407 18.1.2 Organic Light-Emitting Diodes 408 18.1.3 Printed OLEDs 409 18.2 TFTs for OLED Driving 413 18.2.1 TFT Candidates 413 18.2.2 Pixel Circuits 413 18.2.3 Oxide TFTs 414 18.2.3.1 Bottom-Gate TFTs 415 18.2.3.2 Top-Gate TFTs 418 18.3 Oxide TFT–Driven Printed OLED Displays 424 18.4 Summary 427 References 428 19 Mechanically Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channels on Ultrathin Polyimide Films 431Sung-Min Yoon, Hyeong-Rae Kim, Hye-Won Jang, Ji-Hee Yang, Hyo-Eun Kim, and Sol-Mi Kwak 19.1 Introduction 431 19.2 Fabrication of Memory TFTs 432 19.2.1 Substrate Preparation 432 19.2.2 Device Fabrication Procedures 434 19.2.3 Characterization Methodologies 435 19.3 Device Operations of Flexible Memory TFTs 437 19.3.1 Optimization of Flexible IGZO-TFTs on PI Films 437 19.3.2 Nonvolatile Memory Operations of Flexible Memory TFTs 438 19.3.3 Operation Mechanisms and Device Physics 442 19.4 Choice of Alternative Materials 444 19.4.1 Introduction to Conducting Polymer Electrodes 444 19.4.2 Introduction of Polymeric Gate Insulators 446 19.5 Device Scaling to Vertical-Channel Structures 447 19.5.1 Vertical-Channel IGZO-TFTs on PI Films 447 19.5.2 Vertical-Channel Memory TFTs Using IGZO Channel and ZnO Trap Layers 449 19.6 Summary 453 19.6.1 Remaining Technical Issues 453 19.6.2 Conclusions and Outlooks 453 References 454 20 Amorphous Oxide Semiconductor TFTs for BEOL Transistor Applications 457Nobuyoshi Saito and Keiji Ikeda 20.1 Introduction 457 20.2 Improvement of Immunity to H 2 Annealing 458 20.3 Increase of Mobility and Reduction of S/D Parasitic Resistance 463 20.4 Demonstration of Extremely Low Off-State Leakage Current Characteristics 467 References 471 21 Ferroelectric-HfO 2 Transistor Memory with IGZO Channels 473Masaharu Kobayashi 21.1 Introduction 473 21.2 Device Operation and Design 475 21.3 Device Fabrication 478 21.4 Experimental Results and Discussions 479 21.4.1 FE-HfO 2 Capacitors with an IGZO Layer 479 21.4.2 IGZO Channel FeFETs 481 21.5 Summary 484 Acknowledgments 484 References 485 22 Neuromorphic Chips Using AOS Thin-Film Devices 487Mutsumi Kimura 22.1 Introduction 487 22.2 Neuromorphic Systems with Crosspoint-Type α-GTO Thin-Film Devices 488 22.2.1 Neuromorphic Systems 488 22.2.1.1 α-GTO Thin-Film Devices 488 22.2.1.2 System Architecture 489 22.2.2 Experimental Results 492 22.3 Neuromorphic System Using an LSI Chip and α-IGZO Thin-Film Devices [24] 493 22.3.1 Neuromorphic System 494 22.3.1.1 Neuron Elements 494 22.3.1.2 Synapse Elements 494 22.3.1.3 System Architecture 495 22.3.2 Working Principle 495 22.3.2.1 Cellular Neural Network 495 22.3.2.2 Tug-of-War Method 497 22.3.2.3 Modified Hebbian Learning 497 22.3.2.4 Majority-Rule Handling 498 22.3.3 Experimental Results 498 22.3.3.1 Raw Data 498 22.3.3.2 Associative Memory 499 22.4 Conclusion 499 Acknowledgments 500 References 500 23 Oxide TFTs and Their Application to X-Ray Imaging 503Robert A. Street 23.1 Introduction 503 23.2 Digital X-Ray Detection and Imaging Modalities 504 23.2.1 Indirect Detection Imaging 504 23.2.2 Direct Detection Imaging 505 23.2.3 X-Ray Imaging Modalities 505 23.3 Oxide-TFT X-Ray Detectors 506 23.3.1 TFT Backplane Requirements for Digital X-Rays 506 23.3.2 An IGZO Detector Fabrication and Characterization 506 23.3.3 Other Reported Oxide X-Ray Detectors 509 23.4 How Oxide TFTs Can Improve Digital X-Ray Detectors 509 23.4.1 Noise and Image Quality in X-Ray Detectors 510 23.4.2 Minimizing Additive Electronic Noise with Oxides 510 23.4.3 Pixel Amplifier Backplanes 511 23.4.4 IGZO-TFT Noise 511 23.5 Radiation Hardness of Oxide TFTs 513 23.6 Oxide Direct Detector Materials 515 23.7 Summary 515 References 515 Part VII New Materials 519 24 Toward the Development of High-Performance p-Channel Oxide-TFTs and All-Oxide Complementary Circuits 521Kenji Nomura 24.1 Introduction 521 24.2 Why Is High-Performance p-Channel Oxide Difficult? 521 24.3 The Current Development of p-Channel Oxide-TFTs 524 24.4 Comparisons of p-Type Cu 2 O and SnO Channels 526 24.5 Comparisons of the TFT Characteristics of Cu 2 O and SnO-TFTs 529 24.6 Subgap Defect Termination for p-Channel Oxides 532 24.7 All-Oxide Complementary Circuits 534 24.8 Conclusions 535 References 536 25 Solution-Synthesized Metal Oxides and Halides for Transparent p-Channel TFTs 539Ao Liu, Huihui Zhu, and Yong-Young Noh 25.1 Introduction 539 25.2 Solution-Processed p-Channel Metal-Oxide TFTs 540 25.3 Transparent Copper(I) Iodide (CuI)–Based TFTs 546 25.4 Conclusions and Perspectives 548 Acknowledgments 549 References 549 26 Tungsten-Doped Active Layers for High-Mobility AOS-TFTs 553Zhang Qun 26.1 Introduction 553 26.2 Advances in Tungsten-Doped High-Mobility AOS-TFTs 555 26.2.1 a-IWO-TFTs 555 26.2.2 a-IZWO-TFTs 562 26.2.3 Dual Tungsten-Doped Active-Layer TFTs 565 26.2.4 Treatment on the Backchannel Surface 566 26.3 Perspectives for High-Mobility AOS Active Layers 570 References 572 27 Rare Earth– and Transition Metal–Doped Amorphous Oxide Semiconductor Phosphors for Novel Light-Emitting Diode Displays 577Keisuke Ide, Junghwan Kim, Hideo Hosono, and Toshio Kamiya 27.1 Introduction 577 27.2 Eu-Doped Amorphous Oxide Semiconductor Phosphor 577 27.3 Multiple-Color Emissions from Various Rare Earth–Doped AOS Phosphors 579 27.4 Transition Metal–Doped AOS Phosphors 582 References 584 28 Application of AOSs to Charge Transport Layers in Electroluminescent Devices 585Junghwan Kim and Hideo Hosono 28.1 Electronic Structure and Electrical Properties of Amorphous Oxide Semiconductors (AOSs) 585 28.2 Criteria for Charge Transport Layers in Electroluminescent (EL) Devices 585 28.3 Amorphous Zn-Si-O Electron Transport Layers for Perovskite Light-Emitting Diodes (PeLEDs) 587 28.4 Amorphous In-Mo-O Hole Injection Layers for OLEDs 589 28.5 Perspective 594 References 595 29 Displays and Vertical-Cavity Surface-Emitting Lasers 597Kenichi Iga 29.1 Introduction to Displays 597 29.2 Liquid Crystal Displays (LCDs) 597 29.2.1 History of LCDs 597 29.2.2 Principle of LCD: The TN Mode 598 29.2.3 Other LC Modes 600 29.2.4 Light Sources 600 29.2.5 Diffusion Plate and Light Guiding Layer 601 29.2.6 Microlens Arrays 601 29.2.7 Short-Focal-Length Projection 602 29.3 Organic EL Display 602 29.3.1 Method (a): Color-Coding Method 603 29.3.2 Method (b): Filter Method 603 29.3.3 Method (c): Blue Conversion Method 603 29.4 Vertical-Cavity Surface-Emitting Lasers 604 29.4.1 Motivation of Invention 604 29.4.2 What Is the Difference? 605 29.4.3 Device Realization 605 29.4.4 Applications 607 29.5 Laser Displays including VCSELs 607 29.5.1 Laser Displays 607 29.5.2 Color Gamut 608 29.5.3 Laser Backlight Method 609 Acknowledgments 610 References 611 Index 613

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Book SynopsisAn authoritative single-volume reference on the design and analysis of ESD protection for ICs Electrostatic discharge (ESD) is a major reliability challenge to semiconductors, integrated circuits (ICs), and microelectronic systems. On-chip ESD protection is a vital to any electronic products, such as smartphones, laptops, tablets, and other electronic devices.Practical ESD Protection Designprovides comprehensive and systematic guidance on all major aspects of designs of on-chip ESD protection for integrated circuits (ICs). Written for students and practicing engineers alike, this one-stop resource covers essential theories, hands-on design skills, computer-aided design (CAD) methods, characterization and analysis techniques, and more on ESD protection designs. Detailed chapters examine an array of topics ranging from fundamental to advanced, including ESD phenomena, ESD failure analysis, ESD testing models, ESD protection devices and circuits, ESD design layout and technology effectTable of ContentsAuthor Biography xi Preface xiii 1 Why ESD? 1 1.1 A Historical Perspective 1 1.2 ESD and the Dangers 3 1.3 ESD Protection: The Principles 9 1.4 ESD Protection: More or Less? 13 1.5 ESD Protection: Evolution to Revolution 15 References 15 2 ESD Failure Analysis 19 2.1 ESD Failure Analysis 19 2.1.1 ESD Failure Criteria 19 2.1.2 Hard and Soft ESD Failures 20 2.2 ESD FA Techniques 20 2.3 ESD Failure Signatures 22 2.4 ESD Soft Failures 38 2.5 ESD Failure Correlation 41 2.6 ESD Failure Models 44 References 47 3 ESD Test Models and Standards 51 3.1 ESD Origins 51 3.2 HBM Model 52 3.3 mm Model 58 3.4 CDM Model 61 3.5 IEC Model 67 3.6 TLP Model 69 3.7 Summary 74 References 75 4 ESD Protection Devices 77 4.1 On-Chip ESD Protection Mechanisms 77 4.1.1 Switch for ESD Discharge 77 4.1.2 ESD Protection: Active versus Passive 81 4.2 Diode for ESD Protection 84 4.2.1 Diode Device Physics 84 4.2.2 Diode in ESD Protection 85 4.2.3 Diode ESD Parasitic Modeling 87 4.3 BJT for ESD Protection 87 4.3.1 BJT Device Physics 88 4.3.2 BJT in ESD Protection 90 4.3.3 BJT ESD Parasitic Modeling 92 4.4 MOSFET for ESD Protection 93 4.4.1 MOSFET Device Physics 94 4.4.2 ggMOS in ESD Protection 95 4.4.3 MOSFET ESD Parasitic Modeling 98 4.5 SCR for ESD Protection 99 4.5.1 SCR Device Physics 100 4.5.2 SCR in ESD Protection 102 4.5.3 SCR ESD Parasitic Modeling 106 4.6 Summary 107 References 109 5 ESD Protection Circuits 111 5.1 I/O ESD Protection 111 5.1.1 Two-Stage ESD Protection 112 5.1.2 Multiple-Fingers ESD Protection 113 5.1.3 MOSFET ESD Protection Circuits 114 5.1.4 BJT ESD Protection Circuits 117 5.1.5 SCR ESD Protection Circuits 120 5.2 ESD Self-Protection 121 5.2.1 Output ESD Protection 121 5.2.2 ESD Self-Protection 124 5.3 Low-Triggering ESD Protection Circuits 124 5.4 ESD Power Clamps 129 5.4.1 Diode-String Power Clamps 131 5.4.2 MOSFET Power Clamps 134 5.4.3 SCR Power Clamps 135 5.4.4 Any Switch Power Clamps 135 5.5 Summary 136 References 137 6 Full-Chip ESD Protection 139 6.1 Full-Chip ESD Protection Principles 139 6.2 ESD Protection Design Window 140 6.3 Advanced ESD Protection: More at Less 142 6.3.1 Dual-Polarity ESD Protection 143 6.3.2 Multiple-Polarity ESD Protection 147 6.4 Full-Chip ESD Protection Schemes 150 6.4.1 Full-Chip ESD Consideration 150 6.4.2 Pad-Clamp Scheme 151 6.4.3 Global ESD Bus Scheme 153 6.5 No Universal ESD Protection Solution 154 References 155 7 Mixed-Signal and HV ESD Protection 157 7.1 ESD Protection for Mixed-Signal ICs 157 7.2 ESD Protection for Multiple-Voltages ICs 162 7.3 ESD Protection for High-Voltage ICs 167 7.3.1 ESD Design Window Compliance 167 7.3.2 Latch-up Immunity 173 7.4 Summary 174 References 175 8 TCAD-Based Mixed-Mode ESD Protection Designs 177 8.1 ESD Design Optimization and Prediction 177 8.2 TCAD-Based Mixed-Mode ESD Simulation-Design Methodology 182 8.3 Mixed-Mode ESD Simulation-Design Examples 188 8.3.1 Example 1: Understand TCAD ESD Simulation 188 8.3.2 Example-2: ggNMOS versus gcNMOS ESD Protection 192 8.3.3 Example-3: ESD Power Clamp in 0.35 μmCMOS 196 8.3.4 Example-4: Optimize HV ESD Protection Design 199 8.3.5 Example-5: ESD Layout Analysis by 3D TCAD 203 8.3.6 Example-6: Multiple-Stimuli TCAD ESD Simulation 210 8.4 Summary 218 References 219 9 RF ESD Protection 221 9.1 What Is Special for RF ESD Protection? 221 9.2 RF ESD Protection Characterization 226 9.3 Low-Parasitic ESD Protection Solutions 232 9.4 RF ESD Protection Design Example 233 9.5 Summary 236 References 237 10 ESD-RFIC Co-Design 239 10.1 ESD-IC Interactions 239 10.1.1 IC Affects ESD Protection 239 10.1.2 ESD Affects IC Performance 241 10.2 ESD-RFIC Co-Design 248 10.2.1 ESD-RFIC Co-Design Principle 249 10.2.2 ESD–RFIC Co-Design Examples 251 10.3 Summary 259 References 259 11 ESD Layout Designs 261 11.1 Layout is Critical to ESD Protection 261 11.2 Basic ESD Protection Layout 262 11.3 Advanced ESD Protection Layout 274 11.3.1 Advanced ESD Layout Considerations 274 11.3.2 ESD Design Layout is an Art 278 11.4 3D TCAD for ESD Layout Designs 284 11.5 Summary 294 References 295 12 ESD versus IC Technologies 297 12.1 IC Technologies and ESD Protection 297 12.1.1 ESD Metal Interconnects 297 12.1.2 Technology-ESD Co-Development 299 12.1.3 Graphene Heat Spreading 305 12.2 Technology Affects ESD Design Window 305 12.3 Lowering ESD Protection for Advanced ICs? 306 12.4 Summary 308 References 308 13 ESD Circuit Simulation by SPICE 311 13.1 ESD Device Behavior Modeling 311 13.2 Full-Chip ESD Circuit Simulation by SPICE 314 13.2.1 Principle for ESD Circuit Simulation by SPICE 314 13.2.2 Circuit-Level ESD Design Verification by SPICE 319 13.3 Summary 326 References 326 14 Emerging ESD Protection 327 14.1 Emerging ESD Protection Challenges 327 14.2 Dispensable ESD Protection 328 14.3 Field-Programmable ESD Protection 332 14.3.1 Nano-Crystal Quantum-Dots ESD Protection 332 14.3.2 SONOS ESD Protection 334 14.4 Interposer/TSV-Based ESD Protection 337 14.5 Summary 341 References 342 15 ESD CAD for Full-Chip Design Verification 345 15.1 Full-Chip ESD Design Verification 345 15.2 CAD Algorithms for ESD Design Verification 347 15.3 Full-Chip ESD Design Verification Examples 353 15.4 Summary 363 References 364 16 New CDM ESD Protection 367 16.1 Misconception in CDM ESD Protection 367 16.2 Analyzing Pad-Based CDM ESD Protection 370 16.3 Internally Distributed CDM ESD Protection 385 16.4 Summary 391 References 392 17 Future ESD Protection Outlook 395 17.1 The Fundamental ESD Protection Problem 395 17.2 Above-IC Nano-Crossbar Array ESD Switch 396 17.3 Graphene ESD Protection Switch 401 17.4 Graphene ESD Protection Interconnects 405 17.5 Future ESD Protection Outlook 407 17.6 Summary 410 References 411 Index 413

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Book SynopsisThis reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature.Trade Review“With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.” (The German Branch of the European Optical Society, 1 October 2013) "This book would be a valuable reference and essential source for researchers and engineers who work on the development of diode laser products. It will also be useful for academics and teachers for educational purposes." (Optics & Photonics News, 25 October 2013)Table of ContentsPreface xix About the author xxiii Part 1 Diode Laser Engineering 1 Overview 1 1 Basic diode laser engineering principles 3 Introduction 4 1.1 Brief recapitulation 4 1.1.1 Key features of a diode laser 4 1.1.1.1 Carrier population inversion 4 1.1.1.2 Net gain mechanism 6 1.1.1.3 Optical resonator 9 1.1.1.4 Transverse vertical confinement 11 1.1.1.5 Transverse lateral confinement 12 1.1.2 Homojunction diode laser 13 1.1.3 Double-heterostructure diode laser 15 1.1.4 Quantum well diode laser 17 1.1.4.1 Advantages of quantum well heterostructures for diode lasers 22 Wavelength adjustment and tunability 22 Strained quantum well lasers 23 Optical power supply 25 Temperature characteristics 26 1.1.5 Common compounds for semiconductor lasers 26 1.2 Optical output power – diverse aspects 31 1.2.1 Approaches to high-power diode lasers 31 1.2.1.1 Edge-emitters 31 1.2.1.2 Surface-emitters 33 1.2.2 High optical power considerations 35 1.2.2.1 Laser brightness 36 1.2.2.2 Laser beam quality factor M2 36 1.2.3 Power limitations 37 1.2.3.1 Kinks 37 1.2.3.2 Rollover 38 1.2.3.3 Catastrophic optical damage 38 1.2.3.4 Aging 39 1.2.4 High power versus reliability tradeoffs 39 1.2.5 Typical and record-high cw optical output powers 40 1.2.5.1 Narrow-stripe, single spatial mode lasers 40 1.2.5.2 Standard 100 μm wide aperture single emitters 42 1.2.5.3 Tapered amplifier lasers 43 1.2.5.4 Standard 1 cm diode laser bar arrays 44 1.3 Selected relevant basic diode laser characteristics 45 1.3.1 Threshold gain 45 1.3.2 Material gain spectra 46 1.3.2.1 Bulk double-heterostructure laser 46 1.3.2.2 Quantum well laser 47 1.3.3 Optical confinement 49 1.3.4 Threshold current 52 1.3.4.1 Double-heterostructure laser 52 1.3.4.2 Quantum well laser 54 1.3.4.3 Cavity length dependence 54 1.3.4.4 Active layer thickness dependence 56 1.3.5 Transverse vertical and transverse lateral modes 58 1.3.5.1 Vertical confinement structures – summary 58 Double-heterostructure 58 Single quantum well 58 Strained quantum well 59 Separate confinement heterostructure SCH and graded-index SCH (GRIN-SCH) 59 Multiple quantum well (MQW) 59 1.3.5.2 Lateral confinement structures 60 Gain-guiding concept and key features 60 Weakly index-guiding concept and key features 62 Strongly index-guiding concept and key features 63 1.3.5.3 Near-field and far-field pattern 64 1.3.6 Fabry–P´erot longitudinal modes 67 1.3.7 Operating characteristics 69 1.3.7.1 Optical output power and efficiency 72 1.3.7.2 Internal efficiency and optical loss measurements 74 1.3.7.3 Temperature dependence of laser characteristics 74 1.3.8 Mirror reflectivity modifications 77 1.4 Laser fabrication technology 81 1.4.1 Laser wafer growth 82 1.4.1.1 Substrate specifications and preparation 82 1.4.1.2 Substrate loading 82 1.4.1.3 Growth 83 1.4.2 Laser wafer processing 84 1.4.2.1 Ridge waveguide etching and embedding 84 1.4.2.2 The p-type electrode 84 1.4.2.3 Ridge waveguide protection 85 1.4.2.4 Wafer thinning and the n-type electrode 85 1.4.2.5 Wafer cleaving; facet passivation and coating; laser optical inspection; and electrical testing 86 1.4.3 Laser packaging 86 1.4.3.1 Package formats 87 1.4.3.2 Device bonding 87 1.4.3.3 Optical power coupling 89 1.4.3.4 Device operating temperature control 95 1.4.3.5 Hermetic sealing 95 References 96 2 Design considerations for high-power single spatial mode operation 101 Introduction 102 2.1 Basic high-power design approaches 103 2.1.1 Key aspects 103 2.1.2 Output power scaling 104 2.1.3 Transverse vertical waveguides 105 2.1.3.1 Substrate 105 2.1.3.2 Layer sequence 107 2.1.3.3 Materials; layer doping; graded-index layer doping 108 Materials 108 Layer doping 113 Layer doping – n-type doping 113 Layer doping – p-type doping 113 Graded-index layer doping 114 2.1.3.4 Active layer 114 Integrity – spacer layers 114 Integrity – prelayers 115 Integrity – deep levels 115 Quantum wells versus quantum dots 116 Number of quantum wells 119 2.1.3.5 Fast-axis beam divergence engineering 121 Thin waveguides 122 Broad waveguides and decoupled confinement heterostructures 122 Low refractive index mode puller layers 124 Optical traps and asymmetric waveguide structures 126 Spread index or passive waveguides 127 Leaky waveguides 128 Spot-size converters 128 Photonic bandgap crystal 130 2.1.3.6 Stability of the fundamental transverse vertical mode 133 2.1.4 Narrow-stripe weakly index-guided transverse lateral waveguides 134 2.1.4.1 Ridge waveguide 134 2.1.4.2 Quantum well intermixing 135 2.1.4.3 Weakly index-guided buried stripe 137 2.1.4.4 Slab-coupled waveguide 138 2.1.4.5 Anti-resonant reflecting optical waveguide 140 2.1.4.6 Stability of the fundamental transverse lateral mode 141 2.1.5 Thermal management 144 2.1.6 Catastrophic optical damage elimination 146 2.2 Single spatial mode and kink control 146 2.2.1 Key aspects 146 2.2.1.1 Single spatial mode conditions 147 2.2.1.2 Fundamental mode waveguide optimizations 150 Waveguide geometry; internal physical mechanisms 150 Figures of merit 152 Transverse vertical mode expansion; mirror reflectivity; laser length 153 2.2.1.3 Higher order lateral mode suppression by selective losses 154 Absorptive metal layers 154 Highly resistive regions 156 2.2.1.4 Higher order lateral mode filtering schemes 157 Curved waveguides 157 Tilted mirrors 158 2.2.1.5 Beam steering and cavity length dependence of kinks 158 Beam-steering kinks 158 Kink versus cavity length dependence 159 2.2.1.6 Suppression of the filamentation effect 160 2.3 High-power, single spatial mode, narrow ridge waveguide lasers 162 2.3.1 Introduction 162 2.3.2 Selected calculated parameter dependencies 163 2.3.2.1 Fundamental spatial mode stability regime 163 2.3.2.2 Slow-axis mode losses 163 2.3.2.3 Slow-axis near-field spot size 164 2.3.2.4 Slow-axis far-field angle 166 2.3.2.5 Transverse lateral index step 167 2.3.2.6 Fast-axis near-field spot size 167 2.3.2.7 Fast-axis far-field angle 168 2.3.2.8 Internal optical loss 170 2.3.3 Selected experimental parameter dependencies 171 2.3.3.1 Threshold current density versus cladding layer composition 171 2.3.3.2 Slope efficiency versus cladding layer composition 172 2.3.3.3 Slope efficiency versus threshold current density 172 2.3.3.4 Threshold current versus slow-axis far-field angle 172 2.3.3.5 Slope efficiency versus slow-axis far-field angle 174 2.3.3.6 Kink-free power versus residual thickness 174 2.4 Selected large-area laser concepts and techniques 176 2.4.1 Introduction 176 2.4.2 Broad-area (BA) lasers 178 2.4.2.1 Introduction 178 2.4.2.2 BA lasers with tailored gain profiles 179 2.4.2.3 BA lasers with Gaussian reflectivity facets 180 2.4.2.4 BA lasers with lateral grating-confined angled waveguides 182 2.4.3 Unstable resonator (UR) lasers 183 2.4.3.1 Introduction 183 2.4.3.2 Curved-mirror UR lasers 184 2.4.3.3 UR lasers with continuous lateral index variation 187 2.4.3.4 Quasi-continuous unstable regrown-lens-train resonator lasers 188 2.4.4 Tapered amplifier lasers 189 2.4.4.1 Introduction 189 2.4.4.2 Tapered lasers 189 2.4.4.3 Monolithic master oscillator power amplifiers 192 2.4.5 Linear laser array structures 194 2.4.5.1 Introduction 194 2.4.5.2 Phase-locked coherent linear laser arrays 194 2.4.5.3 High-power incoherent standard 1 cm laser bars 197 References 201 Part 2 Diode Laser Reliability 211 Overview 211 3 Basic diode laser degradation modes 213 Introduction 213 3.1 Degradation and stability criteria of critical diode laser characteristics 214 3.1.1 Optical power; threshold; efficiency; and transverse modes 214 3.1.1.1 Active region degradation 214 3.1.1.2 Mirror facet degradation 215 3.1.1.3 Lateral confinement degradation 215 3.1.1.4 Ohmic contact degradation 216 3.1.2 Lasing wavelength and longitudinal modes 220 3.2 Classification of degradation modes 222 3.2.1 Classification of degradation phenomena by location 222 3.2.1.1 External degradation 222 Mirror degradation 222 Contact degradation 223 Solder degradation 224 3.2.1.2 Internal degradation 224 Active region degradation and junction degradation 224 3.2.2 Basic degradation mechanisms 225 3.2.2.1 Rapid degradation 226 Features and causes of rapid degradation 226 Elimination of rapid degradation 229 3.2.2.2 Gradual degradation 229 Features and causes of gradual degradation 229 Elimination of gradual degradation 230 3.2.2.3 Sudden degradation 231 Features and causes of sudden degradation 231 Elimination of sudden degradation 233 3.3 Key laser robustness factors 234 References 241 4 Optical strength engineering 245 Introduction 245 4.1 Mirror facet properties – physical origins of failure 246 4.2 Mirror facet passivation and protection 249 4.2.1 Scope and effects 249 4.2.2 Facet passivation techniques 250 4.2.2.1 E2 process 250 4.2.2.2 Sulfide passivation 251 4.2.2.3 Reactive material process 252 4.2.2.4 N2IBE process 252 4.2.2.5 I-3 process 254 4.2.2.6 Pulsed UV laser-assisted techniques 255 4.2.2.7 Hydrogenation and silicon hydride barrier layer process 256 4.2.3 Facet protection techniques 258 4.3 Nonabsorbing mirror technologies 259 4.3.1 Concept 259 4.3.2 Window grown on facet 260 4.3.2.1 ZnSe window layer 260 4.3.2.2 AlGaInP window layer 260 4.3.2.3 AlGaAs window layer 261 4.3.2.4 EMOF process 261 4.3.2.5 Disordering ordered InGaP 262 4.3.3 Quantum well intermixing processes 262 4.3.3.1 Concept 262 4.3.3.2 Impurity-induced disordering 263 Ion implantation and annealing 263 Selective diffusion techniques 265 Ion beam intermixing 266 4.3.3.3 Impurity-free vacancy disordering 267 4.3.3.4 Laser-induced disordering 268 4.3.4 Bent waveguide 269 4.4 Further optical strength enhancement approaches 270 4.4.1 Current blocking mirrors and material optimization 270 4.4.1.1 Current blocking mirrors 270 4.4.1.2 Material optimization 272 4.4.2 Heat spreader layer; device mounting; and number of quantum wells 273 4.4.2.1 Heat spreader and device mounting 273 4.4.2.2 Number of quantum wells 273 4.4.3 Mode spot widening techniques 274 References 276 5 Basic reliability engineering concepts 281 Introduction 282 5.1 Descriptive reliability statistics 283 5.1.1 Probability density function 283 5.1.2 Cumulative distribution function 283 5.1.3 Reliability function 284 5.1.4 Instantaneous failure rate or hazard rate 285 5.1.5 Cumulative hazard function 285 5.1.6 Average failure rate 286 5.1.7 Failure rate units 286 5.1.8 Bathtub failure rate curve 287 5.2 Failure distribution functions – statistical models for nonrepairable populations 288 5.2.1 Introduction 288 5.2.2 Lognormal distribution 289 5.2.2.1 Introduction 289 5.2.2.2 Properties 289 5.2.2.3 Areas of application 291 5.2.3 Weibull distribution 291 5.2.3.1 Introduction 291 5.2.3.2 Properties 292 5.2.3.3 Areas of application 294 5.2.4 Exponential distribution 294 5.2.4.1 Introduction 294 5.2.4.2 Properties 295 5.2.4.3 Areas of application 297 5.3 Reliability data plotting 298 5.3.1 Life-test data plotting 298 5.3.1.1 Lognormal distribution 298 5.3.1.2 Weibull distribution 300 5.3.1.3 Exponential distribution 303 5.4 Further reliability concepts 306 5.4.1 Data types 306 5.4.1.1 Time-censored or time-terminated tests 306 5.4.1.2 Failure-censored or failure-terminated tests 307 5.4.1.3 Readout time data tests 307 5.4.2 Confidence limits 307 5.4.3 Mean time to failure calculations 309 5.4.4 Reliability estimations 310 5.5 Accelerated reliability testing – physics–statistics models 310 5.5.1 Acceleration relationships 310 5.5.1.1 Exponential; Weibull; and lognormal distribution acceleration 311 5.5.2 Remarks on acceleration models 312 5.5.2.1 Arrhenius model 313 5.5.2.2 Inverse power law 315 5.5.2.3 Eyring model 316 5.5.2.4 Other acceleration models 318 5.5.2.5 Selection of accelerated test conditions 319 5.6 System reliability calculations 320 5.6.1 Introduction 320 5.6.2 Independent elements connected in series 321 5.6.3 Parallel system of independent components 322 References 323 6 Diode laser reliability engineering program 325 Introduction 325 6.1 Reliability test plan 326 6.1.1 Main purpose; motivation; and goals 326 6.1.2 Up-front requirements and activities 327 6.1.2.1 Functional and reliability specifications 327 6.1.2.2 Definition of product failures 328 6.1.2.3 Failure modes, effects, and criticality analysis 328 6.1.3 Relevant parameters for long-term stability and reliability 330 6.1.4 Test preparations and operation 330 6.1.4.1 Samples; fixtures; and test equipment 330 6.1.4.2 Sample sizes and test durations 331 6.1.5 Overview of reliability program building blocks 332 6.1.5.1 Reliability tests and conditions 334 6.1.5.2 Data collection and master database 334 6.1.5.3 Data analysis and reporting 335 6.1.6 Development tests 336 6.1.6.1 Design verification tests 336 Reliability demonstration tests 336 Step stress testing 337 6.1.6.2 Accelerated life tests 339 Laser chip 339 Laser module 341 6.1.6.3 Environmental stress testing – laser chip 342 Temperature endurance 342 Mechanical integrity 343 Special tests 344 6.1.6.4 Environmental stress testing – subcomponents and module 344 Temperature endurance 345 Mechanical integrity 346 Special tests 346 6.1.7 Manufacturing tests 348 6.1.7.1 Functionality tests and burn-in 348 6.1.7.2 Final reliability verification tests 349 6.2 Reliability growth program 349 6.3 Reliability benefits and costs 350 6.3.1 Types of benefit 350 6.3.1.1 Optimum reliability-level determination 350 6.3.1.2 Optimum product burn-in time 350 6.3.1.3 Effective supplier evaluation 350 6.3.1.4 Well-founded quality control 350 6.3.1.5 Optimum warranty costs and period 351 6.3.1.6 Improved life-cycle cost-effectiveness 351 6.3.1.7 Promotion of positive image and reputation 351 6.3.1.8 Increase in customer satisfaction 351 6.3.1.9 Promotion of sales and future business 351 6.3.2 Reliability–cost tradeoffs 351 References 353 Part 3 Diode Laser Diagnostics 355 Overview 355 7 Novel diagnostic laser data for active layer material integrity; impurity trapping effects; and mirror temperatures 361 Introduction 362 7.1 Optical integrity of laser wafer substrates 362 7.1.1 Motivation 362 7.1.2 Experimental details 363 7.1.3 Discussion of wafer photoluminescence (PL) maps 364 7.2 Integrity of laser active layers 366 7.2.1 Motivation 366 7.2.2 Experimental details 367 7.2.2.1 Radiative transitions 367 7.2.2.2 The samples 369 7.2.2.3 Low-temperature PL spectroscopy setup 369 7.2.3 Discussion of quantum well PL spectra 371 7.2.3.1 Exciton and impurity-related recombinations 371 7.2.3.2 Dependence on thickness of well and barrier layer 373 7.2.3.3 Prelayers for improving active layer integrity 375 7.3 Deep-level defects at interfaces of active regions 376 7.3.1 Motivation 376 7.3.2 Experimental details 377 7.3.3 Discussion of deep-level transient spectroscopy results 382 7.4 Micro-Raman spectroscopy for diode laser diagnostics 386 7.4.1 Motivation 386 7.4.2 Basics of Raman inelastic light scattering 388 7.4.3 Experimental details 391 7.4.4 Raman on standard diode laser facets 394 7.4.5 Raman for facet temperature measurements 395 7.4.5.1 Typical examples of Stokes- and anti-Stokes Raman spectra 396 7.4.5.2 First laser mirror temperatures by Raman 398 7.4.6 Various dependencies of diode laser mirror temperatures 401 7.4.6.1 Laser material 402 7.4.6.2 Mirror surface treatment 403 7.4.6.3 Cladding layers; mounting of laser die; heat spreader; and number of active quantum wells 404 References 406 8 Novel diagnostic laser data for mirror facet disorder effects; mechanical stress effects; and facet coating instability 409 Introduction 410 8.1 Diode laser mirror facet studies by Raman 410 8.1.1 Motivation 410 8.1.2 Raman microprobe spectra 410 8.1.3 Possible origins of the 193 cm−1 mode in (Al)GaAs 412 8.1.4 Facet disorder – facet temperature – catastrophic optical mirror damage robustness correlations 413 8.2 Local mechanical stress in ridge waveguide diode lasers 416 8.2.1 Motivation 416 8.2.2 Measurements – Raman shifts and stress profiles 417 8.2.3 Detection of “weak spots” 419 8.2.3.1 Electron irradiation and electron beam induced current (EBIC) images of diode lasers 419 8.2.3.2 EBIC – basic concept 421 8.2.4 Stress model experiments 422 8.2.4.1 Laser bar bending technique and results 422 8.3 Diode laser mirror facet coating structural instability 424 8.3.1 Motivation 424 8.3.2 Experimental details 424 8.3.3 Silicon recrystallization by internal power exposure 425 8.3.3.1 Dependence on silicon deposition technique 425 8.3.3.2 Temperature rises in ion beam- and plasma enhanced chemical vapor-deposited amorphous silicon coatings 427 8.3.4 Silicon recrystallization by external power exposure –control experiments 428 8.3.4.1 Effect on optical mode and P/I characteristics 429 References 430 9 Novel diagnostic data for diverse laser temperature effects; dynamic laser degradation effects; and mirror temperature maps 433 Introduction 434 9.1 Thermoreflectance microscopy for diode laser diagnostics 435 9.1.1 Motivation 435 9.1.2 Concept and signal interpretation 437 9.1.3 Reflectance–temperature change relationship 439 9.1.4 Experimental details 439 9.1.5 Potential perturbation effects on reflectance 441 9.2 Thermoreflectance versus optical spectroscopies 442 9.2.1 General 442 9.2.2 Comparison 442 9.3 Lowest detectable temperature rise 444 9.4 Diode laser mirror temperatures by micro-thermoreflectance 445 9.4.1 Motivation 445 9.4.2 Dependence on number of active quantum wells 445 9.4.3 Dependence on heat spreader 446 9.4.4 Dependence on mirror treatment and coating 447 9.4.5 Bent-waveguide nonabsorbing mirror 448 9.5 Diode laser mirror studies by micro-thermoreflectance 451 9.5.1 Motivation 451 9.5.2 Real-time temperature-monitored laser degradation 451 9.5.2.1 Critical temperature to catastrophic optical mirror damage 451 9.5.2.2 Development of facet temperature with operation time 453 9.5.2.3 Temperature associated with dark-spot defects in mirror facets 454 9.5.3 Local optical probe 455 9.5.3.1 Threshold and heating distribution within near-field spot 455 9.6 Diode laser cavity temperatures by micro-electroluminescence 456 9.6.1 Motivation 456 9.6.2 Experimental details – sample and setup 456 9.6.3 Temperature profiles along laser cavity 457 9.7 Diode laser facet temperature – two-dimensional mapping 460 9.7.1 Motivation 460 9.7.2 Experimental concept 460 9.7.3 First temperature maps ever 460 9.7.4 Independent temperature line scans perpendicular to the active layer 461 9.7.5 Temperature modeling 462 9.7.5.1 Modeling procedure 463 9.7.5.2 Modeling results and discussion 465 References 466 Index 469

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Book SynopsisChoice Recommended Title, July 2020Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic FTrade Review"In this work, Owens (Institute of Experimental and Applied Physics, Czech Republic) offers an up-to-date, encyclopedic assessment of modern radiation detection. Following a succinct historical retelling of the discovery of radiation and radiation detectors in chapter 1, chapters 2 and 3 present an exhaustive review of solid state physics at the upper-division undergraduate level, similar to material encountered in a one-semester course using C. Kittel’s Introduction to Solid State Physics (8th ed., 2005). However, Owens prefers to use the relevant quantum mechanical results (e.g., Bloch functions) rather than their derivations. The core of this volume discusses in detail the materials, fabrication, and characterization of semiconductor devices, including growth techniques and contact characteristics (electrode deposition), going far beyond the typical silicon and gallium arsenide examples. The final chapter explores the future of detector materials including nanoscintillators and biological detectors, as well as radiation detection using spintronics. The addition of extensive references after each chapter and a useful set of appendixes (including calibration sources and a handy table of radionuclides) assures that this volume is well suited for senior engineering and physics students and researchers alike. Summing Up: Recommended. Upper-division undergraduates through faculty and professionals. —J. F. Burkhart, emeritus, University of Colorado at Colorado Springs" Table of Contents1. Introduction to Radiation and Its Detection: An Historical Perspective 2. Semiconductors 3. Crystal Structure 4. Growth Techniques 5. Contacting Systems 6. Detector Fabrication 7. Detector Characterization 8. Radiation Detection and Measurement 9. Materials Used for General Radiation Detection 10. Current Materials Used for Neutron Detection 11. Performance Limiting Factors 12. Improving Performance 13. Future Directions in Radiation Detection Appendix A: Supplementary Reference Material and Further Reading List Appendix B: Table of Physical Constants Appendix C: Units and Conversions Appendix D: Periodic Table of the Elements Appendix E: Properties of the Elements Appendix F: General Properties of Semiconducting Materials Appendix G: Radiation Environments Appendix H: Table of Radioactive Calibration Sources

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Book SynopsisFirst published in 1990, this book provides an overview of the global distribution of the electronics industry and the structural factors which promoted this distribution by the end of the 1980s. Regarded as a flagship' sector in both advanced and developing countries, the electronics industry is encouraged by governments everywhere. Covering both the civilian and the military sides of the industry, Professor Todd reflects on the future of civilian electronics in the light of its global segmentation, and hints at the fundamental role of governments in the unfolding of both civilian and defence-electronics developments. He also endorses the overwhelming significance of strategies being played by electronics enterprises in both the USA and Japan.  Table of ContentsList of Table; List of Figures; Acknowledgements; 1. Introduction 2. The Pivotal Global Players 3. Structural Factors 4. Defence Electronics 5. Innovation and Enterprise 6. The Japanese Powerhouse 7. The NIC Challenge 8. Conclusions; Glossary; References; Index

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Book SynopsisThis reference focuses on the current state of fundamental research and industrial achievements in the field of precision laser processing of a wide range of metal, semiconductor and dielectric materials. The possibilities of microprocessing by pulsed nanosecond laser radiation and copper vapor laser systems are analyzed. Design and operation principles, ways to increase their efficiency and reliability, and a series of modern automated technological installations are described. The work will be of interest to specialists, engineers, students and graduate students working and studying in the field of laser technology and optics, laser and information technology. Table of ContentsIntroduction. Overview of the current state and development of pulsed copper vapor laser (CVL) and copper vapor laser processing systems (CVLPS). Possibilities of pulsed CVL and CVLPS for microprocessing of materials. A new generation of high-performance and durable industrial sealed active element pulsed CVL of the series "Coulomb" with a radiation power of 1-20 W and "Crystal" with a power of 30-100 W. Highly selective optical systems for the formation in CVL and CVLPS of single-beam radiation of diffraction quality and with stable parameters. Industrial technological CVL and CVLPS on the basis of a new generation of sealed active elements and new optical systems. Advanced Caravel automatic laser processing systems. Laser technologies of precision microprocessing of foil and thin sheet materials for electronic components. The use of industrial automatic laser processing systems "Caravel-1", "Caravel-1M", "Caravel-2" and "Caravel-2M" for the manufacture of precision parts of electronic components.

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Book SynopsisThis book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTsTable of Contents1. Motivation Behind High Electron Mobility Transistors 2. Introduction to High Electron Mobility Transistors 3. HEMT Material Technology and Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6. AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9. Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs 12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave Applications 15. Metal Oxide Semiconductor High Electron Mobility Transistors 16. Double Gate High Electron Mobility Transistors

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Book SynopsisPrinciples of Electronic Materials and Devices is one of the few books in the market that has a broad coverage of electronic materials that today''s scientists and engineers need. The general treatment of the textbook and various proofs leverage at a semiquantitative level without going into detailed physics.Table of Contents1) Elementary Materials Science Concepts2) Electrical and Thermal Conduction in Solids3) Elementary Quantum Physics4) Modern Theory of Solids5) Semiconductors6) Semiconductor Devices7) Dielectric Materials and Insulation8) Magnetic Properties and Superconductivity9) Optical Properties of Materials

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Book SynopsisOriginally published in 1916, as part of the Cambridge Technical Series, this book was written to provide a guide to the laws governing the flow of alternating currents in circuits and an account regarding different types of alternating current machines. Illustrative figures are included.Table of ContentsPreface; 1. Preliminary considerations; 2. Inductance; 3. The flow of single phase alternating currents in circuits possessing resistance, inductance and capacity; 4. Power in alternating current circuits; 5. Multiphase currents; 6. Instruments for use on alternating current circuits; 7. Alternators; 8. Static transformers; 9. Induction motors; 10. Converting plant; 11. Switchgear and protective appliances; high tension transmission; Index.

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Book SynopsisDoped by isovalent or heterovalent foreign impurities (F), IIVI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. For the reproducible manufacturing of the doped materials with predicted and desired properties, manufacturing technologists need knowledge of appropriate ternary system phase diagrams.A guide for technologists and researchers at industrial and national laboratories, Ternary Alloys Based on II-VI Semiconductor Compounds collects all available data on ternary IIVIF semiconductor materials. It presents ternary phase diagrams for the systems and includes data about phase equilibriums on the cross sections. The book is also suitable for phase diagram researchers, inorganic chemists, and solid state physicists as well as students in materials science, engineering, physical chemistry, and physics. The authors classify all mTable of ContentsPhase Equilibria in the Systems Based on ZnS. Systems Based on ZnSe. Systems Based on ZnTe. Systems Based on CdS. System Based on CdSe. System Based on CdTe. Systems Based on HgS. Systems Based on HgSe. Systems Based on HgTe. Index.

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Book SynopsisIntroductory Material.- Principles Determining the Voltages and Capacities of Electrochemical Cells.- Binary Electrodes Under Equilibrium or Near-Equilibrium Conditions.- Ternary Electrodes Under Equilibriumor Near-Equilibrium Conditions.- Electrode Reactions That Deviate From Complete Equilibrium.- Insertion Reaction Electrodes.- Negative Electrodes in Lithium Cells.- Convertible Reactant Electrodes.- Positive Electrodes in Lithium Systems.- Negative Electrodes in Aqueous Systems.- Positive Electrodes in Aqueous Systems.- Other Topics Related to Electrodes.- Potentials.- Liquid Electrolytes.- Solid Electrolytes.- Electrolyte Stability Windows and Their Extension.- Experimental Methods to Evaluate the Critical Properties of Electrodes and Electrolytes.- Use of Polymeric Materials As Battery Components.- Transient Behavior of Electrochemical Systems.- Closing Comments.Trade ReviewFrom the reviews:“This book is not at all one more standard textbook on batteries, starting with some thermodynamic and kinetic electrochemistry and continuing with the well-known review of established, emerging, and desired batteries. It is something entirely different. … The book is a must for materials scientists in the field of secondary batteries, and it may indeed be a tutorial for the most patient reader. … It is a highly recommended book.” (R. Holze, Journal of Solid State Electrochemistry, Vol. 17, 2013)“This book is an excellent introduction to the field of advanced batteries for the newcomer to the field. It will not be outdated for a long time, as it is written from the point of view of the basics. … I can recommend without hesitation this book to all interested in batteries, and particularly to those entering the field. It is written at a level appropriate to someone with a chemistry, physics, or materials background.” (Stan Whittingham, MRS Bulletin, Vol. 37 (3), March, 2012)“This timely book focuses on the materials science principles of advanced battery technology. … Extensive reference lists, a summary, and many illustrations and graphs are provided for each chapter, with the author bringing great technical insight to bear on the subject. … This book is an outstanding technical resource on advanced battery technology for students or researchers … . It will definitely help to advance battery technology by providing new researchers with the tools and ideas necessary to develop the next generation of batteries.” (IEEE Electrical Insulation Magazine, 2010)Table of ContentsIntroductory Material.- Principles Determining the Voltages and Capacities of Electrochemical Cells.- Binary Electrodes Under Equilibrium or Near-Equilibrium Conditions.- Ternary Electrodes Under Equilibriumor Near-Equilibrium Conditions.- Electrode Reactions That Deviate From Complete Equilibrium.- Insertion Reaction Electrodes.- Negative Electrodes in Lithium Cells.- Convertible Reactant Electrodes.- Positive Electrodes in Lithium Systems.- Negative Electrodes in Aqueous Systems.- Positive Electrodes in Aqueous Systems.- Other Topics Related to Electrodes.- Potentials.- Liquid Electrolytes.- Solid Electrolytes.- Electrolyte Stability Windows and Their Extension.- Experimental Methods to Evaluate the Critical Properties of Electrodes and Electrolytes.- Use of Polymeric Materials As Battery Components.- Transient Behavior of Electrochemical Systems.- Closing Comments.

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Book SynopsisForget duct tape and baling wire - now makers can design and manufacture things as beautiful as Apple and as slick as Dyson and Audi. We'll show you how to conceive and visualize great-looking projects with our speed course in industrial design - then build them with tools like vacuum forming and laser cutting.

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Book Synopsis

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