Description
Book SynopsisTable of ContentsAuthor Biography xi
Preface xiii
1 Introduction to the Basic Concepts 1
1.1 What Is a Microchip? 1
1.2 Ohm’s Law and Resistivity 1
1.3 Conductor, Insulator, and Semiconductor 5
References 5
2 Brief Introduction of Theories 7
2.1 The Birth of Quantum Mechanics 7
2.2 Energy Band (Band) 11
References 15
3 Early Radio Communication 17
3.1 Telegraph Technology 17
3.2 Electron Tube 19
References 22
4 Basic Knowledge of Electric Circuits (Circuits) 23
4.1 Electric Circuits and the Components 23
4.2 Electric Field 26
4.3 Magnetic Field 28
4.4 Alternating Current 30
5 Further Discussion of Semiconductors and Diodes 33
5.1 Semiconductor Energy Band 33
5.2 Semiconductor Doping 36
5.3 Semiconductor Diode 42
References 46
6 Transistor and Integrated Circuit 47
6.1 Bipolar Transistor 47
6.2 Junction Field Effect Transistor 49
6.3 Metal–Semiconductor Field Effect Transistor 52
6.4 Metal–Insulator–Semiconductor Field Effect Transistor 55
References 60
7 The Development History of Semiconductor Industry 61
7.1 The Instruction of Semiconductor Products and Structures 61
7.2 A Brief History of the Semiconductor Industry 63
7.3 Changes in the Size of Transistors and SiliconWafers 65
7.4 Clean Room 67
7.5 Planar Process 71
References 75
8 Semiconductor Photonic Devices 77
8.1 Light-Emitting Devices and Light-Emitting Principles 77
8.2 Light-Emitting Diode (LED) 82
8.3 Semiconductor Diode Laser 88
8.3.1 Resonant Cavity 89
8.3.2 Reflection and Refraction of Light 91
8.3.3 Heterojunction Materials 93
8.3.4 Population Inversion and Threshold Current Density 94
References 96
9 Semiconductor Light Detection and Photocell 97
9.1 Digital Camera and CCD 97
9.2 Photoconductor 100
9.3 Transistor Laser 101
9.4 Solar Cell 105
References 106
10 Manufacture of Silicon Wafer 109
10.1 From Quartzite Ore to Polysilicon 110
10.2 Chemical Reaction 113
10.3 Pull Single Crystal 115
10.4 Polishing and Slicing 116
References 123
11 Basic Knowledges of Process 125
11.1 The Structure of Integrated Circuit (IC) 125
11.2 Resolution of Optical System 128
11.3 Why Plasma Used in the Process 131
References 133
12 Photolithography (Lithography) 135
12.1 The Steps of Lithography Process 135
12.1.1 Cleaning 135
12.1.2 Dehydration Bake 136
12.1.3 Photoresist Coating 138
12.1.4 Soft Bake 141
12.1.5 Alignment and Exposure 141
12.1.6 Developing 145
12.1.7 Inspection 146
12.1.8 Hard Bake 147
12.1.9 Descum 148
12.2 Alignment Mark (Mark) Design on the Photomask 152
12.3 Contemporary Photolithography Equipment Technologies 156
References 159
13 Dielectric Films Growth 161
13.1 The Growth of Silicon Dioxide Film 162
13.1.1 Thermal Oxidation Process of SiO2 162
13.1.2 LTO Process 164
13.1.3 PECVD Process of Silicon Dioxide 166
13.1.4 TEOS + O3 Deposition Using APCVD System 167
13.2 The Growth of Silicon Nitride Film 168
13.2.1 LPCVD 168
13.2.2 PECVD Process of Silicon Nitride 171
13.3 Atomic Layer Deposition Technique 174
References 177
14 Introduction of Etching and RIE System 179
14.1 Wet Etching 179
14.2 RIE System for Dry Etching 182
14.2.1 RIE Process Flow and Equipment Structure 182
14.2.2 Process Chamber 184
14.2.3 Vacuum Pumps 186
14.2.4 RF Power Supply (Source) and Matching Network (Matchwork) 187
14.2.5 Gas Cylinder and Mass Flow Controller (MFC) 189
14.2.6 Heater and Coolant 194
References 196
15 Dry Etching 197
15.1 The Etch Profile of RIE 197
15.1.1 Case 1 198
15.1.2 Case 2 201
15.2 Etching Rate of RIE 203
15.3 Dry Etching of III–V Semiconductors and Metals 206
15.4 Etch Profile Control 207
15.4.1 Influence of the PR Opening Shape on the Etch Profile 208
15.4.2 The Effect of Carbon on Etching Rate and Profile 209
15.5 Other Issues 211
15.5.1 The Differences Between RIE and PECVD 211
15.5.2 The Difference Between Si and SiO2 Dry Etching 214
15.6 Inductively Coupled Plasma (ICP) Technique and Bosch Process 215
15.6.1 Inductively Coupled Plasma Technique 216
15.6.2 Bosch Process 219
References 223
16 Metal Processes 225
16.1 Thermal Evaporation Technique 225
16.2 Electron Beam Evaporation Technique 227
16.3 Magnetron Sputtering Deposition Technique 231
16.4 The Main Differences Between Electron Beam (Thermal) Evaporation and Sputtering Deposition 234
16.5 Metal Lift-off Process 235
16.6 Metal Selection and Annealing Technology 241
16.6.1 The Selection of Metals 241
16.6.2 Metal Annealing 242
References 243
17 Doping Processes 245
17.1 Basic Introduction of Doping 245
17.2 Basic Principles of Diffusion 246
17.3 Thermal Diffusion 247
17.4 Diffusion and Redistribution of Impurities in SiO2 248
17.5 Minimum Thickness of SiO2 Masking Film 250
17.6 The Distribution of Impurities Under the SiO2 Masking Film 251
17.7 Diffusion Impurity Sources 252
17.8 Parameters of the Diffusion Layer 255
17.9 Four-Point Probe Sheet Resistance Measurement 256
17.10 Ion Implantation Process 257
17.11 Theoretical Analysis of Ion Implantation 259
17.12 Impurity Distribution after Implantation 260
17.13 Type and Dose of Implanted Impurities 262
17.14 The Minimum Thickness of Masking Film 263
17.15 Annealing Process 264
17.16 Buried Implantation 266
17.16.1 Implantation through Masking Film 266
17.16.2 SOI Manufacture 267
References 270
18 Process Control Monitor, Packaging, and the Others 271
18.1 Dielectric Film Quality Inspection 271
18.2 Ohmic Contact Test 273
18.3 Metal-to-Metal Contact 274
18.4 Conductive Channel Control 277
18.5 Chip Testing 278
18.6 Dicing 279
18.7 Packaging 280
18.8 Equipment Operation Range 281
18.9 Low-k and High-k Dielectrics 282
18.9.1 Copper Interconnection and Low-k Dielectrics 283
18.9.2 Quantum Tunneling Effect and High-k Dielectrics 286
18.10 End 291
References 293
Index 295
