Electronic devices and materials Books

Book SynopsisWide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.Table of ContentsVolume 1 Preface xiii Part I Silicon Carbide (SiC) 1 1 Dislocation Formation During Physical Vapor Transport Growth of 4H-SiC Crystals 3Noboru Ohtani 1.1 Introduction 3 1.2 Formation of Basal Plane Dislocations During PVT Growth of 4H-SiC Crystals 5 1.2.1 Plan-View X-ray Topography Observations of Growth Front 5 1.2.2 Cross-Sectional X-ray Topography Observations of Growth Front 9 1.2.3 Characteristic BPD Distribution in PVT-Grown 4H-SiC Crystals 13 1.2.4 BPD Multiplication During PVT Growth 15 1.3 Dislocation Formation During Initial Stage of PVT Growth of 4H-SiC Crystals 18 1.3.1 Preparation of 4H-SiCWafers with Beveled Interface Between Grown Crystal and Seed Crystal 18 1.3.2 Determination of Grown-Crystal/Seed Interface by Raman Microscopy 19 1.3.3 X-ray Topography Observations of Dislocation Structure at Grown-Crystal/Seed Interface 22 1.3.4 Formation Mechanism of BPD Networks and Their Migration into Seed Crystal 23 1.4 Conclusions 28 References 30 2 Industrial Perspectives of SiC Bulk Growth 33Adrian R. Powell 2.1 Introduction 33 2.2 SiC Substrates for GaN LEDs 33 2.3 SiC Substrates for Power SiC Devices 34 2.4 SiC Substrates for High-Frequency Devices 35 2.5 Cost Considerations for Commercial Production of SiC 35 2.6 Raw Materials 36 2.7 Reactor Hot Zone 37 2.8 System Equipment 39 2.9 Yield 39 2.10 Turning Boules intoWafers 41 2.11 Crystal Grind 41 2.12 Wafer Slicing 42 2.13 Wafer Polish 44 2.14 Summary 44 Acknowledgments 45 References 45 3 Homoepitaxial Growth of 4H-SiC on Vicinal Substrates 47Birgit Kallinger 3.1 Introduction 47 3.2 Fundamentals of 4H-SiC Homoepitaxy for Power Electronic Devices 47 3.2.1 4H-SiC Polytype Replication for Homoepitaxial Growth on Vicinal Substrates 48 3.2.2 Homoepitaxial Growth by Chemical Vapor Deposition (CVD) Process 52 3.2.3 Doping in Homoepitaxial Growth 53 3.3 Extended Defects in Homoepitaxial Layers 55 3.3.1 Classification of Extended Defects According to Glide Systems in 4H-SiC 56 3.3.2 Dislocation Reactions During Epitaxial Growth 57 3.3.3 Characterization Methods for Extended Defects in 4H-SiC Epilayers 59 3.4 Point Defects and Carrier Lifetime in Epilayers 62 3.4.1 Classification and General Properties of Point Defects in 4H-SiC 62 3.4.2 Basics on Recombination Carrier Lifetime in 4H-SiC 64 3.4.3 Carrier Lifetime-Affecting Point Defects 65 3.4.4 Carrier Lifetime Measurement in Epiwafers and Devices 68 3.5 Conclusion 69 Acknowledgments 70 References 70 4 Industrial Perspective of SiC Epitaxy 75Albert A. Burk, Jr., Michael J. O’Loughlin, Denis Tsvetkov, and Scott Ustin 4.1 Introduction 75 4.2 Background 76 4.3 The Basics of SiC Epitaxy 76 4.4 SiC Epi Historical Origins 78 4.5 Planetary Multi-wafer Epitaxial Reactor Design Considerations 80 4.5.1 Rapidly Rotating Reactors 81 4.5.2 Horizontal Hot-Wall Reactors 82 4.6 Latest High-Throughput Epitaxial Reactor Status 82 4.7 Benefits and Challenges for Increasing Growth Rate in all Reactors 86 4.8 IncreasingWafer Diameters, Device Processing Considerations, and Projections 86 4.9 Summary 89 Acknowledgment 90 References 90 5 Status of 3C-SiC Growth and Device Technology 93Peter Wellmann, Michael Schöler, Philipp Schuh, Mike Jennings, Fan Li, Roberta Nipoti, Andrea Severino, Ruggero Anzalone, Fabrizio Roccaforte, Massimo Zimbone, and Francesco La Via 5.1 Introduction, Motivation, Short Review on 3C-SiC 93 5.2 Nucleation and Epitaxial Growth of 3C-SC on Si 95 5.2.1 Growth Process 95 5.2.2 Defects 98 5.2.3 Stress 102 5.3 Bulk Growth of 3C-SiC 103 5.3.1 Sublimation Growth of (111)-oriented 3C-SiC on Hexagonal SiC Substrates 104 5.3.2 Sublimation Growth of 3C-SiC on 3C-SiC CVD Seeding Layers 105 5.3.3 Continuous Fast CVD Growth of 3C-SiC on 3C-SiC CVD Seeding Layers 110 5.4 Processing and Testing of 3C-SiC Based Power Electronic Devices 117 5.4.1 Prospects for 3C-SiC Power Electronic Devices 117 5.4.2 3C-SiC Device Processing 117 5.4.3 MOS Processing 118 5.4.4 3C-SiC/SiO2 Interface Passivation 120 5.4.5 Surface Morphology Effects on 3C-SiC Thermal Oxidation 121 5.4.6 Thermal Oxidation Temperature Effects for 3C-SiC 122 5.4.7 Ohmic Contact Metalization 123 5.4.8 N-type 3C-SiC Ohmic Contacts 126 5.4.9 Ion Implantation 126 5.5 Summary 127 Acknowledgements 127 References 127 6 Intrinsic and Extrinsic Electrically Active Point Defects in SiC 137Ulrike Grossner, Joachim K. Grillenberger, Judith Woerle, Marianne E. Bathen, and Johanna Müting 6.1 Characterization of Electrically Active Defects 141 6.1.1 Deep Level Transient Spectroscopy 141 6.1.1.1 Profile Measurements 143 6.1.1.2 Poole–Frenkel Effect 143 6.1.1.3 Laplace DLTS 143 6.1.2 Low-energy Muon Spin Rotation Spectroscopy 144 6.1.2.1 μSR and Semiconductors 144 6.1.3 Density Functional Theory 145 6.2 Intrinsic Electrically Active Defects in SiC 146 6.2.1 The Carbon Vacancy, VC 147 6.2.2 The Silicon Vacancy, VSi 152 6.3 Transition Metal and Other Impurity Levels in SiC 153 6.4 Summary 159 References 163 7 Dislocations in 4H-SiC Substrates and Epilayers 169Balaji Raghothamachar and Michael Dudley 7.1 Introduction 169 7.2 Dislocations in Bulk 4H-SiC 170 7.2.1 Micropipes (MPs) and Closed-core Threading Screw Dislocations (TSDs) 170 7.2.2 Basal Plane Dislocations (BPDs) 171 7.2.3 Threading Edge Dislocations (TEDs) 171 7.2.4 Interaction between BPDs and TEDs 171 7.2.4.1 Hopping Frank–Read Source of BPDs 171 7.2.5 Threading Mixed Dislocations (TMDs) in 4H-SiC 173 7.2.5.1 Reaction Between Threading Dislocations with Burgers Vectors of −c+a and c+a Wherein the Opposite c-Components Annihilate Leaving Behind the Two a-Components 174 7.2.5.2 Reaction Between Threading Dislocations with Burgers Vectors of –c and c+a Leaving Behind the a-Component 175 7.2.5.3 Reaction Between Opposite-sign Threading Screw Dislocations with Burgers Vectors c and −c 175 7.2.5.4 Nucleation of Opposite Pair of c+a Dislocations and Their Deflection 175 7.2.5.5 Deflection of Threading c+a, c and Creation of Stacking Faults 177 7.2.6 Prismatic Slip during PVT growth 4H-SiC Boules 180 7.2.7 Relationship Between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC SubstrateWafers 181 7.2.8 Investigation of Dislocation Behavior at the Early Stage of PVT-grown 4H-SiC Crystals 181 7.3 Dislocations in Homoepitaxial 4H-SiC 184 7.3.1 Conversion of BPDs into TEDs 184 7.3.2 Susceptibility of Basal Plane Dislocations to the Recombination-Enhanced Dislocation Glide in 4H Silicon Carbide 184 7.3.3 Nucleation of TEDs, BPDs, and TSDs at Substrate Surface Damage 188 7.3.4 Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epitaxial Layers 191 7.3.5 V- and Y-shaped Frank-type Stacking Faults 192 7.4 Summary 192 Acknowledgments 195 References 195 8 Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation 199Binh Duong Nguyen and Stefan Sandfeld 8.1 Introduction 199 8.2 General Modeling and Simulation Approaches 200 8.3 Continuum Dislocation Modeling Approaches 201 8.3.1 Alexander–Haasen Model 201 8.3.2 Continuum Dislocation Dynamics Models 202 8.3.2.1 The Simplest Model: Straight Parallel Dislocation with the Same Line Direction 203 8.3.2.2 The “Groma” Model: Straight Parallel Dislocations with Two Line Directions 203 8.3.2.3 The Kröner–Nye Model for Geometrically Necessary Dislocations 204 8.3.2.4 Three-dimensional Continuum Dislocation Dynamics (CDD) 204 8.4 Example 1: Comparison of the Alexander–Haasen and the Groma Model 206 8.4.1 Governing Equations 206 8.4.2 Physical System and Model Setup 206 8.4.3 Results and Discussion 209 8.5 Example 2: Dislocation Flow Between Veins 211 8.5.1 A Brief Introduction to Dislocation Patterning and the Similitude Principle 211 8.5.2 Physical System and Model Setup 213 8.5.3 Geometry and Initial Values 214 8.5.4 Results and Discussion 215 8.6 Summary and Conclusion 219 References 220 9 Gate Dielectrics for 4H-SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H-SiC/SiO2 Interface 225Gregor Pobegen and Thomas Aichinger 9.1 Introduction 225 9.2 Electrical Impact of Traps on MOSFET Characteristics 225 9.2.1 Sub threshold Sweep Hysteresis 226 9.2.2 Preconditioning Measurement 231 9.2.3 Bias Temperature Instability 233 9.2.4 Reduced Channel Electron Mobility 235 9.3 Microscopic Nature of Electrically Active Traps Near the Interface 237 9.3.1 The PbC Defect and the Subthreshold Sweep Hysteresis 237 9.3.2 The Intrinsic Electron Trap and the Reduced MOSFET Mobility 238 9.3.3 Point Defect Candidates for BTI 240 9.4 Conclusions and Outlook 242 References 243 10 Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface 249Michael Krieger and Heiko B. Weber 10.1 Introduction 249 10.2 Epitaxial Graphene as a Metal 249 10.3 Fabrication and Structuring of Epitaxial Graphene 250 10.3.1 Epitaxial Growth by Thermal Decomposition 250 10.3.2 Intercalation 251 10.3.3 Structuring of Epitaxial Graphene Layers and Partial Intercalation 252 10.4 Epitaxial Graphene as Tailorable Metal/Semiconductor Contact 253 10.4.1 Ohmic Contacts 254 10.4.2 Schottky Contacts 256 10.5 Monolithic Epitaxial Graphene Electronic Devices and Circuits 257 10.5.1 Discrete Epitaxial Graphene Devices 257 10.5.2 Monolithic Integrated Circuits 259 10.6 Novel Experiments on Light–Matter Interaction Enabled by Epitaxial Graphene 260 10.6.1 High-Frequency Operation and Ultimate Speed Limits of Schottky Diodes 260 10.6.2 Transparent Electrical Access to SiC for Novel Quantum Technology Applications 263 10.7 Conclusion 264 Acknowledgments 265 References 265 11 Device Processing Chain and Processing SiC in a Foundry Environment 271Arash Salemi, Minseok Kang, Woongje Sung, and Anant K. Agarwal 11.1 Introduction 271 11.2 DMOSFET Structure 271 11.3 Process Integration of SiC MOSFETs 273 11.3.1 Lithography 283 11.3.2 SiC Etching 283 11.3.3 Ion Implantation and Activation Annealing 290 11.3.4 Oxidation and Oxide 293 11.3.5 Post Oxidation Annealing 296 11.3.6 Poly-Si Deposition 298 11.3.7 Backside Thinning andWaffle Substrates 300 11.3.8 Ohmic Contacts and Metallization 301 11.3.9 Polyimide Deposition 302 11.4 Commercial Foundries for Si and SiC Devices 303 11.4.1 Cost Model 303 11.4.1.1 Cost Roadmap for WBG Devices 303 11.4.2 New Equipment and Processing Requirements 305 11.5 Dedicated Foundries vs. Commercial Foundries 306 References 307 12 Unipolar Device in SiC: Diodes and MOSFETs 319Sei-Hyung Ryu 12.1 Introduction 319 12.2 Unipolar Diodes – 4H-SiC JBS Diodes 320 12.2.1 Optimization of 4H-SiC JBS Diodes 323 12.2.1.1 Injection from the p+ Regions for Surge Operation 324 12.2.1.2 Trench JBS Diodes 326 12.2.1.3 Use of LowWork Function Metal for Anode Metal 327 12.3 Unipolar Switches: Power MOSFETs 329 12.3.1 4H-SiC Power MOSFET Structures 332 12.3.1.1 DMOSFETs 332 12.3.1.2 Trench MOSFETs 337 12.3.2 Advanced Power MOSFET Structures in 4H-SiC 342 12.3.2.1 Superjunction MOSFETs in 4H-SiC 342 12.3.2.2 Integrated JBS Diodes in 4H-SiC Power MOSFETs 345 12.4 Summary 346 References 348 Volume 2 13 Ultra-High-Voltage SiC Power Device 353Yoshiyuki Yonezawa and Koji Nakayama 14 SiC Reliability Aspects 387Josef Lutz and Thomas Basler 15 Industrial Systems Using SiC Power Devices 433Nando Kaminski 16 Special Focus on HEV and EV Applications: Activities of Automotive Industries Applying SiC Devices for Automotive Applications 467Kimimori Hamada, Keiji Toda, Hiromichi Nakamura, Shigeharu Yamagami, and Kazuhiro Tsuruta 17 Point Defects in Silicon Carbide for Quantum Technology 503András Csóré and Adam Gali Part II Gallium Nitride (GaN), Diamond, and Ga2O3 529 18 Ammonothermal and HVPE Bulk Growth of GaN 531Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik, Mikolaj Amilusik, Karolina Grabianska, Malgorzata Iwinska, and Michal Bockowski 19 GaN on Si: Epitaxy and Devices 555Hidekazu Umeda 20 Growth of Single Crystal Diamond Wafers for Future Device Applications 583Matthias Schreck 21 Diamond Wafer Technology, Epitaxial Growth, and Device Processing 633Hideaki Yamada, Hiromitsu Kato, Shinya Ohmagari, and Hitoshi Umezawa 22 Gallium Oxide: Material Properties and Devices 659Masataka Higashiwaki Index 681

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Book SynopsisOrganic Electronics for Electrochromic Materials and Devices Explore this comprehensive overview of organic electrochromic materials and devices from a leading voice in the industryOrganic Electronics for Electrochromic Materials and Devices delivers a complete discussion of the major and key topics related to the phenomenon of electrochromism. The text covers the history of organic electrochromism, its fundamental principles, different types of electrochromic materials, the development of device structures and multi-function devices, characterizations of device performance, modern applications of electrochromic devices, and prospects for future electrochromic devices.The distinguished author places a strong focus on recent research results from universities and private firms from around the world and addresses the issues and challenges faced by those who apply organic electrochromic technology in the real world. With these devices quickly becoming the go-to display technology in the field of electronic information, this resource will quickly become indispensable to all who work or study in the field of optics.Readers will also benefit from the inclusion of: A thorough introduction to organic electrochromism, including its history and the mechanisms of electrochromic devices An exploration of polymer electrolytes for electrochromic applications, including their requirements and types A discussion of electrochromic small molecules, including the development of technology in viologen materials, fluoran and fluorescein dyes, violene-cyanine hybrids, triarylamine molecules and liquid crystal electrochromic materials. A perspective analysis of the redox-active conjugated polymers and triarylamine based non-conjugated polymers applied in electrochromic devices A treatment of Prussian blue and metallohexacyanates, including their backgrounds, technology development, crystal structures, synthesis, nanocomposites, and assembled electrochromic devices Perfect for materials scientists, polymer chemists, organic chemists, physical chemists, and inorganic chemists, Organic Electronics for Electrochromic Materials and Devices will also earn a place in the libraries of physicists and those who work in the optical industry who seek a one-stop reference that covers all aspects of organic electrochromic materials.Table of ContentsPreface xiii About the Author xiv 1 Introduction 1 1.1 General Introduction 1 1.2 The History of Electrochromic Materials 3 1.3 The Key Parameters of Electrochromism 5 1.3.1 Electrochromic Contrast 5 1.3.2 Switching Time 8 1.3.3 Coloration Efficiency 9 1.3.4 Optical Memory 11 1.3.5 Stability 12 1.4 Conclusion 14 References 14 2 Advances in Polymer Electrolytes for Electrochromic Applications 17 2.1 Introduction 17 2.2 Requirements of Polymer Electrolytes in Electrochromic Applications 18 2.3 Types of Polymer Electrolytes 20 2.3.1 Gel Polymer Electrolytes (GPEs) 20 2.3.1.1 PEO-/PEG-Based Electrolytes 21 2.3.1.2 PMMA-Based Polymer Electrolytes 21 2.3.1.3 PVDF-Based Polymer Electrolytes 22 2.3.2 Self-Healing Polymer Electrolytes 24 2.3.3 Cross-Linking Polymer Electrolytes (CPEs) 26 2.3.4 Ceramic Polymer Electrolytes 27 2.3.5 Ionic Liquid Polymer Electrolytes 30 2.3.6 Gelatin-Based Polymer Electrolytes 32 2.4 Conclusion and Future Outlook 33 References 40 3 Electrochromic Small Molecules 49 3.1 Background of Small Molecule Electrochromic 49 3.2 Technology Development of Small Molecule Electrochromic Materials 50 3.3 Violene–Cyanine Hybrids (AIE PL OEC) 50 3.4 Terephthalate Derivatives (Multicolor OEC) 56 3.4.1 Conclusion 63 3.5 Isophthalate Derivatives 64 3.5.1 Conclusion 79 3.6 Methyl Ketone Derivatives 79 3.6.1 Conclusion 84 3.7 Diphenylacetylenes 84 3.8 Fluoran Dye Derivatives 85 3.9 PH-Responsive Molecule Derivatives 92 3.10 TPA Dye Derivatives 95 3.11 Hydrocarbon Derivatives-NIR-OEC 99 3.12 Conclusions and Perspective 101 References 101 4 Viologen OEC 105 4.1 The Introduction of OEC and Viologen 105 4.1.1 General Introduction 105 4.1.2 Research History of Viologen 105 4.1.2.1 First Stage (1930s–1970s) 107 4.1.2.2 Second Stage (1970s–2000s) 107 4.1.2.3 Third Stage (2000s–2010s) 107 4.1.2.4 Fourth Stage (2010s–Present) 108 4.1.3 Electrochromism and Electrochemistry of Viologens and Their Device 109 4.2 Different Structures of Viologen-Based Electrochromic Materials 110 4.2.1 Synthesis of Viologens 110 4.2.1.1 Direct Substitution Reaction 110 4.2.1.2 Zincke Reaction 110 4.2.1.3 Methods for Synthesizing Bipyridine 110 4.2.2 The 1,1 Substituted Viologen 111 4.2.2.1 Simple Alkyl 111 4.2.2.2 Acid Group 111 4.2.2.3 Ester and Nitrogen Heterocycle 112 4.2.2.4 Asymmetric Substitution 113 4.2.3 Conjugate Ring System Expansion 113 4.2.3.1 Thiazolothiazole (TTz) Unit 113 4.2.3.2 Perylenediimide (PDI) Unit 115 4.2.3.3 PBEDOTPh 115 4.2.3.4 Heteroatoms Bridged 115 4.2.3.5 Bithiophene Bridged 118 4.2.4 Viologen-Based Polymer 119 4.2.4.1 Viologen in the Side Chain 120 4.2.4.2 Viologen in the Main Chain 122 4.3 Viologen Electrochromic Device 124 4.3.1 Device Structure 124 4.3.1.1 Five-Layer Classic Structure 124 4.3.1.2 Simple Sandwich Structure 125 4.3.1.3 Cathodic Anode Separation Structure 125 4.3.1.4 Reflective Device Structure 126 4.3.2 Electrolyte 126 4.3.3 Redox Mediator 126 4.3.4 Conductive Medium 128 4.3.5 Problems with Viologen Compound 128 4.3.5.1 Dimerization 128 4.3.5.2 Aggregation and Solubility 131 4.3.5.3 Response Time 131 4.3.5.4 Driving Voltage 131 4.3.5.5 Conclusion 131 4.3.6 Examples of Viologen-Based ECD 132 4.4 Companies Operating in the Field of Viologen Electrochromism 132 4.4.1 Gentex 132 4.4.2 Essilor 134 4.4.3 Haoruo 134 4.5 Conclusion 134 References 135 5 Metallohexacyanates 143 5.1 Background 143 5.2 Technology Development of PB 144 5.3 Crystal Structure 144 5.4 Electrochromic Mechanism 145 5.5 Synthesis 147 5.6 Electrochromic Devices (ECDs) 150 5.7 Nanocomposites 154 5.8 PB Analogs 160 5.9 Multifunctional Applications 170 References 175 6 Electrochromic Conjugated Polymers (ECPs) 183 6.1 Introduction 183 6.1.1 Common Categories and Operation Mechanism 183 6.1.2 Synthetic Methods 186 6.2 Thiophene-Based Conjugated Electrochromic Polymers 190 6.2.1 Introduction 190 6.2.2 Color-Tuning Strategies for Thiophene-Based Polymers 191 6.2.2.1 Steric Effects 192 6.2.2.2 Substituent and Electronic Effects 193 6.2.3 Typical Colored Polymers 195 6.2.3.1 Yellow and Orange 196 6.2.3.2 Red 198 6.2.3.3 Magenta and Purple 199 6.2.3.4 Black 202 6.2.3.5 Multicolored 203 6.2.3.6 Anodically Coloring Polymers 205 6.2.4 Water- or “Green Solvents”-Soluble ECPs 208 6.3 Polypyrroles-Based Conjugated Electrochromic Polymers 216 6.3.1 Introduction 216 6.3.2 Electrochromic Properties of Polypyrroles (PPy) 218 6.3.3 Tuning of Electrochromic Properties of Polypyrrole (PPy) 218 6.3.3.1 Structural Modification 218 6.3.3.2 3- and 3,4-Substituted Polypyrroles 235 6.3.3.3 Donor–Acceptor Approach 236 6.3.3.4 Terarylene Systems 237 6.4 Polycarbazole-Based Conjugated Electrochromic Polymers 237 6.4.1 Introduction 237 6.4.2 Electrochromic Properties of Polycarbazoles (PCARB) 238 6.4.3 Electrochromic Properties of Polycarbazoles Derivatives 238 6.4.3.1 Linear Polycarbazole Derivatives 241 6.4.3.2 Cross-Linked Polycarbazoles Derivatives 249 References 260 7 TA-Based Electrochromic Polyimides and Polyamides 269 7.1 Introduction 269 7.1.1 Aromatic Polyimides and Polyamides 269 7.1.2 Triarylamine-Based Aromatic Polymers 270 7.1.3 Electrochemical and Electrochromic Behaviors of MV Triarylamine Systems 272 7.2 Development of TA-Based Electrochromic Polyimides and Polyamides 272 7.2.1 Side Group Engineering 276 7.2.1.1 Introduction of Protecting Groups 276 7.2.1.2 Introduction of Electroactive Groups to Achieve Color Tuning of EC Material 277 7.2.1.3 Introduction of Side Groups to Achieve Electrofluorochromic Materials 278 7.2.1.4 Introduction of Other Functional Side Groups to Achieve Multiple Functions EC Material 281 7.2.2 Backbone Modulation 283 7.2.2.1 Extending the Polymer Backbone by Introducing More Electroactive Groups 283 7.2.2.2 Introduction of Amide Linkage into Polyimide Backbone 285 7.2.2.3 Introduction of Ether Linkage into PIs/PAs Backbone 285 7.2.2.4 Introduction of Alicyclic Structures into PIs/PAs Backbone 288 7.3 Conclusions 290 References 290 8 Metallo-Supermolecular Polymers 295 8.1 Introduction 295 8.2 Single Metallic System 296 8.2.1 Fe(II)- and Ru(II)-Based Metallo-Supramolecular Polymers 296 8.2.2 CoII-Based Metallo-Supramolecular Polymers 299 8.2.3 ZnII-Based Metallo-Supramolecular Polymers 301 8.2.4 Cu-Based Metallo-Supramolecular Polymers 305 8.2.5 EuIII-Based Metallo-Supramolecular Polymers 308 8.3 Hetero-Metallic System 311 8.4 The Fabrication Method of Metallopolymer Film 314 8.4.1 Layer-by-Layer Self-Assembly and Dip-Coating Methods 314 8.4.2 Electropolymerized Conducting Metallopolymers 315 8.5 Conclusion 323 References 323 9 Metal-Organic Framework (MOF)- and Covalent Organic Framework (COF)-Based Electrochromism (EC) 327 9.1 Introduction 327 9.2 Current Studies in EC MOFs 327 9.2.1 The Organic Linkers in EC MOFs 328 9.2.1.1 NDI-Based Organic Linkers 328 9.2.1.2 Other Organic Linkers 332 9.2.2 The Transport of Electrolyte Ions in EC MOFs 335 9.2.3 Special EC MOFs 338 9.2.3.1 Photochromic and Electrochromic Multi-Responsive MOF 338 9.2.3.2 MOF-Based Double-Sided EC Device and Other Color-Switching Mechanisms 339 9.2.3.3 EC Base on “Guest@MOF” Composite System 340 9.3 Current Studies in EC COFs 341 9.4 Conclusion and Prospect 348 References 348 10 Nanostructure-Based Electrochromism 353 10.1 Introduction 353 10.2 Current Studies of Nanostructure in Electrochromism 354 10.2.1 Non-Electrochromic Active Materials as a Template for ECs 354 10.2.1.1 Photonic Crystals as Templates for ECs 354 10.2.1.2 Plasmonic Structures as Templates for ECs 359 10.2.2 Nanostructured Electrochromic Materials in ECs 365 10.3 Conclusion and Prospect 369 References 369 11 Organic Electroluminochromic Materials 373 11.1 Introduction 373 11.2 Conventional Mechanisms of Electroluminochromism 375 11.2.1 Intrinsic Mechanism 375 11.2.2 Electron Transfer (ET) Mechanism 376 11.2.3 Energy Transfer (EnT) Mechanism 376 11.3 Electroluminochromic Performance Parameters 376 11.3.1 Emission Contrast 376 11.3.2 Switching Time 377 11.3.3 Long-Term Stability/Cycle Life 377 11.4 Classical Materials 378 11.4.1 Small Molecules 378 11.4.1.1 Small Molecular Dyads 378 11.4.1.2 Redox-Active Moiety and Luminophores System 380 11.4.1.3 Electroactive Luminophores 382 11.4.2 Transition Metal Complexes 386 11.4.3 Polymers 387 11.4.3.1 Non-Conjugated Polymers 387 11.4.3.2 Conjugated Polymers 396 11.4.4 Nanocomposite Films 407 11.5 Future Perspectives and Conclusion 408 References 408 12 Organic Photoelectrochromic Devices 415 12.1 Introduction 415 12.2 Structure Design of PECDs 417 12.2.1 Power Supply for PECD 417 12.2.1.1 DSSC-Based PECD 418 12.2.1.2 PSC-Based PECD 423 12.2.1.3 OPV-Based PECD 423 12.2.2 Electrochromic Materials in PECD 425 12.2.2.1 Small Molecule 425 12.2.2.2 Conducting Polymers 427 12.2.2.3 Near-Infrared (NIR) Electrochromic Materials 433 12.2.3 Electrolytes in PECD 435 12.2.4 Substrates in PECD 435 12.3 Future Perspectives and Conclusion 436 References 436 13 Application of OEC Devices 445 13.1 Smart Window 445 13.1.1 The Structure andWorking Mechanism of Smart Windows 445 13.1.2 The Materials for Electrochromic Windows 446 13.1.3 Prospects 450 13.2 Dimmable Rearview Mirror 450 13.3 Sensors 451 13.3.1 Application of Electrochromic Sensors on Food Preservation 451 13.3.2 Application in Bio-Sensing 454 13.4 The Application of Electrochromic Device in Display 460 13.5 Other Applications of OEC 462 References 469 14 Commercialized OEC Materials and Related Analysis of Company Patents 471 14.1 General Introduction 471 14.2 Gentex Corporation 471 14.3 Ricoh Company, Ltd. 475 14.4 Canon Inc. 476 14.5 BOE Technology Group Co., Ltd. and OPPO Guangdong Mobile Communications Co., Ltd. 477 14.6 Other Important Enterprises 481 14.6.1 Ninbo Ninuo Electronic Technology Co., Ltd. 481 14.6.2 Ambilight Inc. 483 14.6.3 Furcifer Inc. 483 14.6.4 Changzhou Spectrum New Material Co. Ltd. 484 14.7 Conclusion 485 References 485 15 Main Challenges for the Commercialization of OEC 491 15.1 Introduction 491 15.2 The Long-Term Stability of OEC Materials 491 15.3 The Mechanical Stability of OEC Devices (Encapsulation Technology) 495 15.4 Large-Area Process Technology: Spray Coating and Roll-to-Roll Processes 498 15.4.1 Inkjet Printing 498 15.4.2 Spray Coating 500 15.4.3 Slot-Die Coating 500 15.4.4 Screen Printing 501 15.5 Conclusions and Perspective 501 References 502 Index 505

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Book SynopsisThis clear and self-contained review of the last four decades of research highlights in the hot field of nonlinear optical (NLO) crystals, particularly of borate-based ultraviolet and deep-ultraviolet NLO crystals, covers three major subjects: the structure-property relationship in borate crystals, the structural and optical characteristics of various promising borate crystals, and their fruitful applications in a wide range of scientific and technological fields. Edited by the discoverers and users of these optical borate crystals, this is a readily accessible reading for semiconductor, applied and solid state physicists, materials scientists, solid state chemists, manufacturers of optoelectronic devices, and those working in the optical industry. Table of ContentsPreface INTRODUCTION History of the Theoretical Understanding for Nonlinear Optical Crystals History of Development on Nonlinear Optical Borate Crystals Crystal Growth of Nonlinear Borate Crystals and Current Status of Applications THEORETICAL BASIS TO DEVELOP BORATE NONLINEAR OPTICAL CRYSTALS BORATE NONLINEAR OPTICAL CRYSTALS FOR FREQUENCY CONVERSION BBO LBO Family KBBF Family Other Borate Crystals Borate Crystals in Developing APPLICATIONS Rapid Proto-Typing Semiconductor Industry - Bia-Hole Drilling - Annealing - Marking - Inspection Bio-Medical Applications - Eye Surgery - Protein Processing Advanced Instrument Making

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Book SynopsisSuperconductivity The third edition of this proven text has been developed further in both scope and scale to reflect the potential for superconductivity in power engineering to increase efficiency in electricity transmission or engines. The landmark reference remains a comprehensive introduction to the field, covering every aspect from fundamentals to applications, and presenting the latest developments in organic superconductors, superconducting interfaces, quantum coherence, and applications in medicine and industry. Due to its precise language and numerous explanatory illustrations, it is suitable as an introductory textbook, with the level rising smoothly from chapter to chapter, such that readers can build on their newly acquired knowledge. The authors cover basic properties of superconductors and discuss stability and different material groups with reference to the latest and most promising applications, devoting the last third of the book to applications in power engineering, medicine, and low temperature physics. An extensive list of more than 350 references provides an overview of the most important publications on the topic. A unique and essential guide for students in physics and engineering, as well as a reference for more advanced researchers and young professionals.Trade Review"The reader will find a comprehensive and legible treatment of the entire field, an overview of the theoretical concepts and a detailed description of all recent applications." (Metall 2016)Table of ContentsPreface to the Third Edition IX Introduction 1 References 9 1 Fundamental Properties of Superconductors 11 1.1 The Vanishing of the Electrical Resistance 11 1.2 Ideal Diamagnetism, Flux Lines, and Flux Quantization 21 1.3 Flux Quantization in a Superconducting Ring 30 1.4 Superconductivity: A Macroscopic Quantum Phenomenon 33 1.5 Quantum Interference 45 1.5.1 Josephson Currents 47 1.5.2 Quantum Interference in a Magnetic Field 59 References 71 2 Superconducting Elements, Alloys, and Compounds 75 2.1 Introductory Remarks 75 2.1.1 Discovery, Preparation, and Characterization of New Superconductors 75 2.1.2 Conventional and Unconventional Superconductors 76 2.2 Superconducting Elements 78 2.3 Superconducting Alloys and Metallic Compounds 83 2.3.1 The β-Tungsten Structure 84 2.3.2 Magnesium Diboride 86 2.3.3 Metal–Hydrogen Systems 87 2.4 Fullerides 88 2.5 Chevrel Phases and Boron Carbides 89 2.6 Heavy-Fermion Superconductors 92 2.7 Natural and Artificial Layered Superconductors 94 2.8 The Superconducting Oxides 96 2.8.1 Cuprates 96 2.8.2 Bismuthates, Ruthenates, and Other Oxide Superconductors 103 2.9 Iron Pnictides and Related Compounds 104 2.10 Organic Superconductors 107 2.11 Superconductivity at Interfaces 110 References 111 3 Cooper Pairing 117 3.1 Conventional Superconductivity 117 3.1.1 Cooper Pairing by Means of Electron–Phonon Interaction 117 3.1.2 The Superconducting State, Quasiparticles, and BCSTheory 124 3.1.3 Experimental Confirmation of Fundamental Concepts about the Superconducting State 129 3.1.3.1 The Isotope Effect 130 3.1.3.2 The Energy Gap 133 3.1.4 Special Properties of Conventional Superconductors 150 3.1.4.1 Influence of Lattice Defects on Conventional Cooper Pairing 150 3.1.4.2 Influence of Paramagnetic Ions on Conventional Cooper Pairing 157 3.2 Unconventional Superconductivity 163 3.2.1 General Aspects 163 3.2.2 Cuprate Superconductors 170 3.2.3 Heavy Fermions, Ruthenates, and Other Unconventional Superconductors 186 3.2.4 FFLO-State and Multiband Superconductivity 193 References 196 4 Thermodynamics and Thermal Properties of the Superconducting State 201 4.1 General Aspects ofThermodynamics 201 4.2 Specific Heat 205 4.3 Thermal Conductivity 209 4.4 Ginzburg–LandauTheory 212 4.5 Characteristic Lengths of the Ginzburg–LandauTheory 216 4.6 Type-I Superconductors in a Magnetic Field 221 4.6.1 Critical Field and Magnetization of Rod-Shaped Samples 221 4.6.2 Thermodynamics of the Meissner State 226 4.6.3 Critical Magnetic Field of Thin Films in a Field Parallel to the Surface 230 4.6.4 The Intermediate State 231 4.6.5 TheWall Energy 235 4.6.6 Influence of Pressure on the Superconducting State 239 4.7 Type-II Superconductors in a Magnetic Field 244 4.7.1 Magnetization Curve and Critical Fields 246 4.7.2 The Shubnikov Phase 256 4.8 Fluctuations above the Transition Temperature 268 4.9 States Outside Thermodynamic Equilibrium 272 References 277 5 Critical Currents in Type-I and Type-II Superconductors 283 5.1 Limit of the Supercurrent Due to Pair Breaking 283 5.2 Type-I Superconductors 285 5.3 Type-II Superconductors 291 5.3.1 Ideal Type-II Superconductor 291 5.3.2 Hard Superconductors 296 5.3.2.1 Pinning of Flux Lines 296 5.3.2.2 Magnetization Curve of Hard Superconductors 301 5.3.2.3 Critical Currents and Current–Voltage Characteristics 310 References 318 6 Josephson Junctions and Their Properties 321 6.1 Current Transport across Interfaces in a Superconductor 321 6.1.1 Superconductor–Insulator Interface 321 6.1.2 Superconductor–Normal Conductor Interfaces 328 6.1.3 Superconductor–Ferromagnet Interfaces 335 6.2 The RCSJ Model 337 6.3 Josephson Junctions under Microwave Irradiation 342 6.4 Vortices in Long Josephson Junctions 346 6.5 Quantum Properties of Superconducting Tunnel Junctions 357 6.5.1 Coulomb Blockade and Single-Electron Tunneling 358 6.5.2 Flux Quanta and Macroscopic Quantum Coherence 363 References 368 7 Applications of Superconductivity 373 7.1 Superconducting Magnetic Coils 374 7.1.1 General Aspects 374 7.1.2 Superconducting Cables and Tapes 375 7.1.3 Coil Protection 386 7.2 Superconducting Permanent Magnets 388 7.3 Applications of Superconducting Magnets 390 7.3.1 Nuclear Magnetic Resonance 390 7.3.2 Magnetic Resonance Imaging 394 7.3.3 Particle Accelerators 395 7.3.4 Nuclear Fusion 397 7.3.5 Energy Storage Devices 398 7.3.6 Motors and Generators 401 7.3.7 Magnetic Separation and Induction Heaters 404 7.3.8 Levitated Trains 405 7.4 Superconductors for Power Transmission: Cables, Transformers, and Current Fault Limiters 406 7.4.1 Superconducting Cables 407 7.4.2 Transformers 409 7.4.3 Current Fault Limiters 411 7.5 Superconducting Resonators and Filters 412 7.5.1 High-Frequency Behavior of Superconductors 413 7.5.2 Resonators for Particle Accelerators 417 7.5.3 Resonators and Filters for Communications Technology 420 7.6 Superconducting Detectors 425 7.6.1 Sensitivity,Thermal Noise, and Environmental Noise 426 7.6.2 Incoherent Radiation and Particle Detection: Bolometers and Calorimeters 427 7.6.3 Coherent Detection and Generation of Radiation: Mixers, Local Oscillators, and Integrated Receivers 431 7.6.4 Quantum Interferometers as Magnetic Field Sensors 440 7.6.4.1 SQUID Magnetometer: Basic Concepts 440 7.6.4.2 Environmental Noise, Gradiometers, and Shielding 450 7.6.4.3 Applications of SQUIDs 454 7.7 Superconductors in Microelectronics 459 7.7.1 Voltage Standards 460 7.7.2 Digital Electronics Based on Josephson Junctions 463 References 468 Monographs and Article Collections 477 History of Superconductivity 477 General Books 477 Special Materials 477 Tunnel Junctions, Josephson Junctions, and Vortices 477 Nonequilibrium Superconductivity 478 Applications of Superconductivity 478 General Overview 478 Magnets, Cables, Power Applications 478 Microwaves, Magnetic Field Sensors, Electronics 478 Low Temperature Physics and Technology 478 Index 479

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Book SynopsisCollinear Holography Provides state-of-the-art, in-depth knowledge on the principles, devices, and applications of collinear holography In the era of Big Data, traditional magnetic and optical storage technologies are unable to satisfy the growing demand for reliable, scalable, cost-effective, and energy-efficient data storage. Holographic storage, considered the most promising technology for meeting the future storage needs of the information age, adopts a three-dimensional volume storage mode with a theoretical storage density vastly greater than conventional optical disks. Collinear Holography: Devices, Materials, Data Storage is a comprehensive, up-to-date account of the volumetric recording technology that combines large storage capacities with high transfer rates and exceptional reliability in optical data storage systems. Written by pioneers in the field, this authoritative book provides detailed coverage of the key technological approaches, theories, applications, systems, devices, and components in the rapidly advancing field of holographic data storage. Explains the principles of collinear holography, its different system setups, key devices and components, and current challenges Describes the materials, data and media formats, servo controls, and read/write characteristics of collinear holography storage systems Details collinear holography in current applications such as holo-printing, ­correlation, and encryption Discusses futures technologies including the Holographic Versatile Disc (HVD) and the The Holographic Versatile Card (HVC) Collinear Holography: Devices, Materials, Data Storage is an indispensable resource for applied physicists, electrical engineers, and materials and information scientists in both academia and industry.Table of Contents1. INTRODUCTION1.1 Big data era1.2 History of holographic data storage1.3 Present problems2. SYSTEM OF COLLINEAR HOLOGRAPHY2.1 Polarized collinear holography2.2 Principle of collinear holography2.3 Collinear recording and reproduction characteristic evaluation device: S-VRD2.4 B-VRD2.5 HVD-ES12.6 SHOT-2000 (Standard Holographic Optical Tester for Collinear system)3. THEORIES OF COLLINEAR HOLOGRAPHY3.1 Analysis of a Collinear Holographic Storage System: Introduction of Pixel Spread Function3.2 Theoretical treatment of the collinear system and formulate numerical evaluation technique based on the scalar diffraction theory3.3 Orthogonal reference patterns multiplexing for collinear holographic data storage3.4 Simulation of interference fringes formed by collinear method4. KEY DEVICES AND COMPONENTS4.1 Laser4.2 DMD4.3 CMOS4.4 Servo Actuator5. MATERIALS5.1 Holographic media for commercial uses5.2 Holographic Photopolymer Materials5.3 PQ/PMMA6. DATA FORMAT6.1 3:16 Modulation6.2 Sync Format6.3 Reference pattern6.4 Phase modulation6.5 Low-Density Parity-Check Code6.6 Disc Format7. CHARACTERISTICS OF WRITE AND READ7.1 Introduction7.2 Shift selectivity7.3 Parameters7.4 Symbol error7.5 Numerical simulation analysis of collinear shift selectivity7.6 Summary8. SYSTEM MARGIN OF a Collinear Holographic Data StorageSystem8.1 Defocus margin8.2 Detrack Margin8.3 Image plane margins8.4 Tilt margin8.5 Wavelength margin8.6 Temperature compensation condition for collinear holographic data storage8.7 Noise Margin9. APPLICATIONS9.1 High-speed optical correlation system based on collinear holography9.2 3D Holographic printer9.3 Encryption

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Book SynopsisDieses Lehrbuch gibt eine verständliche Einführung in die Leistungselektronik. Aufbau und Wirkungsweise fremd-, last- und selbstgeführter Schaltungen werden vorgestellt. Steuerverfahren, Schalt- und Modulationsfunktionen werden behandelt. Komplexe Sachverhalte werden auf einfache Modelle reduziert. Funktionen werden mit einem geringen mathematischen Aufwand beschrieben. In der zehnten Auflage wurde in Kapitel 9 die Beschreibung der HGÜ-Technik erweitert. In Kapitel 19 werden nun Energieversorgungsnetze einbezogen. Der Themenkomplex der elektrischen Fahrzeugantriebe bildet jetzt ein eigenes Kapitel.Table of ContentsGrundlagen.- Dioden.- Transistoren.- Thyristoren.- Aufbau- und Verbindungstechnik.- Wärme-Management.- Wechselstromschaltungen.- Drehstromschaltungen.- Netzrückwirkungen.- Schwingkreiswechselrichter.- Maschinen-Stromrichter-Systeme.- Selbstgeführte Stromrichter mit Strom- und Spannungszwischenkreis.- Steuer- und Modulationsverfahren.- Raumzeigerdarstellung.- Frequenzumrichter.- Gleichspannungswandler.- Schaltnetzteile.- LLC.- Elektromagnetische Verträglichkeit.- Stromversorgung.- FACTS.- Fahrzeugantriebe.- Bordnetze.- Energiespeicher.- HGÜ.- Energieversorgungsnetze.- Energieeffizienz.

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Book SynopsisThis book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.Table of ContentsDiffusion and point defects in silicon materials.- Density functional modeling of defects and impurities in silicon materials.- Electrical and optical defect evaluation techniques for electronic and solar grade silicon.- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt.- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells.- Oxygen precipitation in silicon.- Defect characterization by electron beam induced current and cathode luminescence methods.- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators.- Defect Engineering in silicon materials.

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Book SynopsisThis book charts the unsettled media cultures and deep time of shellac, retracing its journey from the visual to the sonic, and back again. Each chapter unveils a situated moment in the long history of shellac – travelling from its early visual culture to Emile Berliner’s discovery of its auditory properties through to its recycling in contemporary art and design practices. Unforeseen correspondences between artefacts as diverse as mirrors, seals, gramophone discs and bombs are revealed. With its combinatory approach and commitment to material thinking, Shellac in Visual and Sonic Culture insists on moments of contact, encounter, and transformation. The book notably addresses the colonial unconscious underpinning the early transnational recording industry, highlighting the multiple gestures and forms of labour entombed within the production of the 78rpm disc. Roy explores shellac as a concrete substance, as well as the malleable stuff of which stories, histories and modern imaginings were made – and unmade.Table of ContentsIntroduction: From material culture to the materials of culture Chapter 1. Sheen: Early stories and circulation of shellac Chapter 2. Crackle: Assembling the record Chapter 3. Mirrors: Phono-fetishism and intersensory visions Chapter 4. Detonations: Shellac at war Chapter 5. Shards: Waste, obsolescence, and contemporary remediations Conclusion: Sonic sculptures Index

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Book SynopsisForeword by Charles H TownesThis volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers.As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport.

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Book SynopsisSurface acoustic wave (SAW) devices are recognized for their versatility and efficiency in controlling and processing electrical signals. This has resulted in a multitude of device concepts for a wide range of signal processing functions, such as delay lines, filters, resonators, pulse compressors, convolvers, and many more. As SAW technology has found its way into mass market products such as TV receivers, pagers, keyless entry systems and cellular phones, the production volume has risen to millions of devices produced every day. At the other end of the scale, there are specialized high performance signal processing SAW devices for satellite communication and military applications, such as radar and electronic warfare.This volume, together with Volume 2, presents an overview of recent advances in SAW technology, systems and applications by some of the foremost researchers in this exciting field.Table of ContentsA history of surface acoustic wave devices, D.P. Morgan; thin films for SAW devices, F.S. Hickemell; bulk and surface acoustic waves in anisotropic solids, E.L. Adler; analysis of SAW excitation and propagation under periodic metallic grating structures, K.-Y. Hashimoto et al; high-performance surface transverse wave resonators in the lower GHz frequency range, I.D. Avramov; SAW antenna duplexers for mobile communication, M. Hikita; ladder type SAW filter and its application to high power SAW devices, Y. Satoh and O. Ikata.

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Book SynopsisPackaging materials, assembly processes, and the detailed understanding of multilayer mechanics have enabled much of the progress in miniaturization, reliability, and functional density achieved by modern electronic, microelectronic, and nanoelectronic products. The design and manufacture of miniaturized packages, providing low-loss electrical and/or optical communication, while protecting the semiconductor chips from environmental stresses and internal power cycling, require a carefully balanced selection of packaging materials and processes. Due to the relative fragility of these semiconductor chips, as well as the underlying laminated substrates and the bridging interconnect, selection of the packaging materials and processes is inextricably bound with the mechanical behavior of the intimately packaged multilayer structures, in all phases of development for traditional, as well as emerging, electronic product categories.The Encyclopedia of Packaging Materials, Processes, and Mechanics, compiled in 8, multi-volume sets, provides comprehensive coverage of the configurations and techniques, assembly materials and processes, modeling and simulation tools, and experimental characterization and validation techniques for electronic packaging. Each of the volumes presents the accumulated wisdom and shared perspectives of leading researchers and practitioners in the packaging of electronic components. The Encyclopedia of Packaging Materials, Processes, and Mechanics will provide the novice and student with a complete reference for a quick ascent on the packaging 'learning curve,' the practitioner with a validated set of techniques and tools to face every challenge in packaging design and development, and researchers with a clear definition of the state-of-the-art and emerging needs to guide their future efforts. This encyclopedia will, thus, be of great interest to packaging engineers, electronic product development engineers, and product managers, as well as to researchers in the assembly and mechanical behavior of electronic and photonic components and systems. It will be most beneficial to undergraduate and graduate students studying materials, mechanical, electrical, and electronic engineering, with a strong interest in electronic packaging applications.

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Book SynopsisDriven by the advent of two-dimensional materials, valleytronics is emerging as the next hot field of research in materials science. While the use of charge or spin degrees of freedom in electronic materials as information carriers is familiar and well-appreciated, employment of the valley degree of freedom as an information carrier has remained elusive for many decades. Shortly following the discovery of isolated graphene, 2D semiconductors such as transition metal dichalcogenides were also isolated and investigated. We now understand that these materials can have separately addressable valleys because each valley can be uniquely coupled to a spin state. This imparts the ability to address different valleys (like pseudospins) with electric field, magnetic field, or light, and there is now a real possibility to engineer practical devices based on using valley as the information carrier.Valleytronics in 2D Materials is the first book in the world on the topic of valleytronics. The reader is introduced to the concept via a brief history emphasizing the challenges that impeded its development for so long. We then dive into the valley physics of 2D semiconductors to explain the recent excitement in 2D valleytronics, the scientific investigations to confirm the addressable valleys, and the attempts to engineer valley devices for practical purposes. The text takes on a decidedly practical approach towards the subject, seeking to bring the reader quickly into the field by presenting the minimum theoretical basis for understanding the use of the valley degree of freedom in devices. A selection of key works establishing the scientific underpinnings of valley addressability and control are described to help the reader grasp the current stage of understanding, the technical foundations established, and the open questions. The renewal in valleytronics is yet unfinished, but with more than a decade of research and engineering efforts devoted in recent times, this book seeks to provide a timely reference for students, scientists and engineers to join this exciting journey and perhaps help to create the next disruption in information technology.Trade Review"This is a timely book — the field of valleytronics is emerging and I have yet to see a book on this topic; and the field of 2D materials is just publishing its first books. Valleytronics in 2D Materials introduces the brief history of valleytronics, the valley physics of 2D semiconductors, and recent attempts to engineer valley devices for practical purposes. The field is still developing, and this book will provide a useful reference for researchers in the field."; Andrew Wee, Professor of Physics, National University of Singapore; Director, Surface Science Lab, National University of Singapore; Fellow, Institute of Physics, UK; Associate Editor, ACS Nano; "The lead author, Professor Johnson Goh, is a renowned expert in the field of valleytronics, and I believe the book will be truly appreciated by the research community not just in the field of 2D materials, but also in the areas of quantum information, quantum technology, and electronics engineering, to name but a few. Valleytronics in 2D Materials is extremely timely — the field of 2D materials has advanced beyond pure research and entered the engineering and technology areas. It will serve as a practical guide for students, researchers, and entrepreneurs interested in understanding and working in this rapidly developing research field ... The book structure is well-thought and comprehensive ... I totally recommend this book!"; Artem Mishchenko; National Graphene Centre; University of Manchester, UK;Table of ContentsBrief History of Valleytronics; Valley Physics in 2D Materials; Valley Addressability — Screening for Valley Contrast; Valley Controllability — The First Experiments; Material Preparation and Development for Valleytronics; Valley Current Generation and Detection; Valley Device Engineering; Valley-Polarised Single Photons; Opportunities for Applications — Are We Ready for Valleytronics?;

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Book SynopsisThis book mainly introduces the basic theory and physical characteristics of photoelectric materials, the preparation technology of photoelectric components, the working principle, the latest application, the latest progress of photoelectric materials and devices technology and the correlation with other technologies. The content mainly involves the theoretical basis of photoelectric materials, micro-nano photoelectric materials and devices, semiconductor luminescent materials and devices, inorganic photoluminescence materials, LED packaging technology, transparent conductive materials, touch screen, display screen, solar cell materials and the basic principles and development trend of their applications. In particular, the book gives a systematic theoretical analysis of new photoelectric materials and devices, such as optoelectronic materials and devices, transparent conductive materials, and provides application examples.

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Book SynopsisOrganic (opto)electronic materials have received considerable attention due to their applications in perovskite and flexible electronics, OPVs and OLEDs and many others. Reflecting the rapid growth in research and development of organic (opto)electronic materials over the last few decades, World Scientific Handbook of Organic Optoelectronic Devices provides a comprehensive coverage of the state-of-the-art in an accessible format. It presents the most widely recognized fundamentals, principles, and mechanisms along with representative examples, key experimental data, and over 200 illustrative figures.

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Book SynopsisMetal halide perovskites are the hottest materials currently.This unique compendium covers systematically the fundamental aspects of synthesis, properties, and applications of metal halide perovskites that exhibit unique properties and useful functionalities.Written for beginners and practitioners, this useful reference text provides a good balance between fundamental concepts/principles and related recent researches with many highlighted examples.This volume benefits researchers, practitioners, graduate students in materials chemistry/nanochemistry, physical chemistry and semiconductors.

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Book SynopsisThe unique compendium presents special principles and techniques of spectroscopic measurements that are used in semiconductor manufacturing.Since industrial applications of spectroscopy are significantly different from those traditionally used in scientific laboratories, the design concepts and characteristics of industrial spectroscopic devices may vary significantly from conventional systems. These peculiarities are thus succinctly summarized in this volume for a wide audience of students, engineers, and scientific workers.Exceptionally well-illustrated with practical solutions in detail, this useful reference text will open new horizons in new research areas.

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Book SynopsisIn this two-volume work, writing for a general audience, Dr Michael Gurvitch proposes a unifying concept of electronics which combines the history of electronics with the science of evolution. Drawing on his long experience in scientific development, Gurvitch illuminates electronics from the inside using the point of view of a practicing scientist. What is elusive and often overlooked becomes palpable, engaging and even humorous with the author's tireless and methodical exposition of fundamental scientific roots from which electronics grew and continues to grow.This set contains both volumes of Brave New e-World, presenting the historical review of electronics from the middle of the 18th century to the present day. From the telegraph to the quantum computer and superconductors, Gurvitch combines personal recollections with scientific knowledge to advance the final thesis: the representation of a new non-biological evolution in electronics. This is all done in an intellectually engaging way: spiced by historical anecdotes, warmed by Gurvitch's enthusiastic love for science, and completed with the full participation of the reader. The concluding argument on electronic evolution is alarming, but it might prove to be a necessary concern in the continual development of electronic technologies.

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Book SynopsisCurrent leading-edge CMOS transistors are about as small as they will get. We now have a simple, clear, very physical understanding of how these devices function, but it has not yet entered our textbooks. Besides, CMOS logic transistors, power transistors are increasingly important as are III-V heterostructure transistors for high-frequency communication. Transistor reliability is also important but rarely treated in introductory textbooks.As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes modern electronics possible. That is the goal of these lectures. This volume rearranges the familiar topics and distills the most essential among them, while adding most recent approaches which have become crucial to the discussion. To follow the lectures, readers need only a basic understanding of semiconductor physics. Familiarity with transistors and electronic circuits is helpful, but not assumed.Related Link(s)

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Book SynopsisCurrent leading-edge CMOS transistors are about as small as they will get. We now have a simple, clear, very physical understanding of how these devices function, but it has not yet entered our textbooks. Besides, CMOS logic transistors, power transistors are increasingly important as are III-V heterostructure transistors for high-frequency communication. Transistor reliability is also important but rarely treated in introductory textbooks.As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes modern electronics possible. That is the goal of these lectures. This volume rearranges the familiar topics and distills the most essential among them, while adding most recent approaches which have become crucial to the discussion. To follow the lectures, readers need only a basic understanding of semiconductor physics. Familiarity with transistors and electronic circuits is helpful, but not assumed.Related Link(s)

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Book SynopsisThe book focuses on the design, materials, process, fabrication, and reliability of advanced semiconductor packaging components and systems. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as system-in-package, fan-in wafer/panel-level chip-scale packages, fan-out wafer/panel-level packaging, 2D, 2.1D, 2.3D, 2.5D, and 3D IC integration, chiplets packaging, chip-to-wafer bonding, wafer-to-wafer bonding, hybrid bonding, and dielectric materials for high speed and frequency. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.Table of ContentsRecent Advance on Semiconductor Packaging.- System-in-Package.- Fan-In Wafer/Panel-Level Chip-Scale Packages.- Fan-Out Wafer/Panel-Level Packaging.- 2D, 2.1D, and 2.3D IC Integration.- 2.5D IC Integration.- 3D IC Integration.- Hybrid Bonding.- Chiplets Packaging.- Dielectric Materials.- Trends and Roadmap for Advanced Semiconductor Packaging.

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Book SynopsisImprove your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device models, fabrication technology, and layout as they apply to mixed analog-digital circuits.You will learn about the many device-modeling requirements for analog work, as well as the pitfalls in models used today for computer simulators such as Spice. Also included is information on fabrication technologies developed specifically for mixed-signal VLSI chips, plus guidance on the layout of mixed analog-digital chips for a high degree of analog-device matching and minimum digital-to-analog interference.This reference book features an intuitive introduction to MOSFET operation that will enable you to view with insight any MOSFET model — besides thorough discussions on valuable large-signal and small-signal models.Filled with practical information, this first-of-its-kind book will help you grasp the nuances of mixed-signal VLSI-device models and layout that are crucial to the design of high-performance chips.Table of ContentsContents: Introduction: Mixed Analog-Digital Chips; The MOSFET: Introduction and Qualitative View; MOSFET DC Modeling; MOSFET Small-Signal Modeling; Technology and Available Circuit Components; Layout; Appendices: Additional MOS Transistor Modeling Information; A Set of Benchmark Tests for Evaluating MOSFET Models for Analog Design; A Sample Spice Input File.

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Book SynopsisThis volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.Table of ContentsNovel Heterostructure Devices: - Electron-Phonon Interactions in Intersubband Laser Heterostructures (M V Kisin et al.) - Quantum Dot Infrared Detectors and Sources (P Bhattacharya et al.) - Generation of Terahertz Emission Based on Intersubband Transitions (Q Hu) - Mid-Infrared GaSb-Based Lasers with Type-I Heterointerfaces (D V Donetsky et al.) - Advances in Quantum- Dot Research and Technology: The Path to Applications in Biology (M A Stroscio & M Dutta) - Potential Device Applications and Basic Properties: - High-Field Electron Transport Controlled by Optical Phonon Emission in Nitrides (S M Komirenko et al.) - Cooling by Inverse Nottingham Effect with Resonant Tunneling (Y Yu et al.) - The Physics of Single Electron Transistors (M A Kastner) - Carrier Capture and Transport within Tunnel Injection Lasers: A Quantum Transport Analysis (L F Register et al.) - The Influence of Environmental Effects on the Acoustic Phonon Spectra in Quantum-Dot Heterostructures (S Rufo et al.) - Quantum Devices with Multipole- Electrode -- Heterojunctions Hybrid Structures (R Tsu)

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Book SynopsisThe increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.Table of Contents* Ion-Stimulated Processes * Transmutation Doping of Semiconductors by Charged Particles * Doping of Semiconductors Using Radiation Defects * Formation of Buried Porous and Damaged Layers

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Book SynopsisThis textbook contains all the materials that an engineer needs to know to start a career in the semiconductor industry. It also provides readers with essential background information for semiconductor research. It is written by a professional who has been working in the field for over two decades and teaching the material to university students for the past 15 years. It includes process knowledge from raw material preparation to the passivation of chips in a modular format.Table of ContentsBuilding Blocks for Integrated Circuits; Thermal Oxidation; Gas Kinetics and Plasma Physics; Chemical Vapor Deposition; Plasma-enhanced Chemical Vapor Deposition and Etching; Pattern Transfer: Photolithography; Pattern Generation: Photomask Processing; Doping Technology; Metallization and Silicidation; Planarization and CMP Technology; Copper and Low k.

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Book SynopsisA reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.Table of ContentsOverview; Review of Basic Semiconductor and pn Junction Theory; MOS Transistor Structure and Operation; MOS Capacitor; Threshold Voltage; MOSFET DC Model; Dynamic Model; Modeling Hot-Carrier Effects; Data Acquisition and Model Parameter Measurements; Model Parameter Extraction Using Optimization Method; SPICE Diode and MOSFET Models and Their Parameters; Statistical Modeling and Worst-Case Design Parameters.

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Book SynopsisThis volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.Table of ContentsSemiconductor Device Physics; Basic Compact Surface-Potential Model of the MOSFET; Advanced MOSFET Phenomena Modeling; Capacitances; Noise Models; Non-Quasi-Static (NQS) Model; Leakage Currents; Source/Bulk and Drain/Bulk Diode Models; Source/Drain Resistances; Effects of the Source/Drain Diffusion Length for Shallow Trench Isolation (STI) Technologies; Summary of Model Equations; Exclusion of Modeled Effects and Model Flags.

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Book SynopsisInformation technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature — something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students.Table of ContentsIntroduction; The Untold Story; Biography of Herbert Kroemer; The Nobel Lecture; Publications List; Herbert Kroemer: Oral History; Not Just the Blue Sky; Reprinted Articles: General Principles of Heterostructures and HBTs; Hot-Electron Negative Resistance Effects; GaAs and GaP on Si and Related Topics; Superconductor-Semiconductor Hybrids; Herbert Kroemer on Nanotechnology.

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Book SynopsisThis is the first monograph that strives to give a complete and detailed description of the collective modes (CMs) in unconventional superfluids and superconductors (UCSF&SC). Using the most powerful method of modern theoretical physics — the path (functional) integral technique — authors build the three- and two-dimensional models for s-, p- and d-wave pairing in neutral as well as in charged Fermi-systems, models of superfluid Bose-systems and Fermi-Bose-mixtures. Within these models they study the collective properties of such systems as superfluid 3He, superfluid 4He, superfluid 3He-4He mixtures, superfluid 3He-films, superfluid 3He and superfluid 3He-4He mixtures in aerogel, high temperature superconductors, heavy-fermion superconductors, superconducting films etc. Authors compare their results with experimental data and predict a lot of new experiments on CMs study. This opens for experimentalists new possibilities for search of new intriguing features of collective behavior of UCSF&SC.The monograph creates the new scientific direction — the spectroscopy of collective modes in unconventional superfluids and superconductors. It will be useful for both theorists and experimentalists, studying superfluids and superconductors, low temperature physics, condensed matter physics, solid state physics. It could be used by graduate students specializing in the same areas.Table of ContentsThe Functional Integration Method; Collective Excitations in Superfluid Fermi-Systems with s-Pairing; Superfluid Phases in 3He; The Model of 3He; Collective Excitations in the B-Phase of 3He; Collective Excitations in the A-Phase of 3He; Stability of Goldstone Modes; Influence of Dipole Interaction and Magnetic Field on Collective Excitations; Influence of Electric Field on the Collective Excitations in 3He and 4He; The Order Parameter Distortion and Collective Modes in 3He; Collective Excitations in 2D-Phase; Collective Excitations in the A1-Phase; Experiments on Collective Modes in Superfluid 3He; Superfluidity of Two-Dimensional and One-Dimensional Systems; Bose Spectrum of Superfluid Solutions 3He-4He; Novel Sound Phenomena in Impure Superfluids; Collective Modes in Unconventional Superconductors; Other Applications of the Theory of Collective Excitations.

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Book SynopsisThis descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work.Table of ContentsIntroduction; Carrier Physics and Junction Electrostatics; Bipolar Junction Diode; Power Metal-Oxide-Semiconductor Field-Effect Transistor; Insulated-Gate Bipolar Transistor; Superjunction Structures; Fabrication and Modeling of Power Devices; Practical Case Studies in Power Devices.

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Book SynopsisThis book provides a comprehensive summary of the status of emerging sensor technologies and provides a framework for future advances in the field. Chemical sensors have gained in importance in the past decade for applications that include homeland security, medical and environmental monitoring and also food safety. A desirable goal is the ability to simultaneously analyze a wide variety of environmental and biological gases and liquids in the field and to be able to selectively detect a target analyte with high specificity and sensitivity. The goal is to realize real-time, portable and inexpensive chemical and biological sensors and to use these as monitors for handheld gas, environmental pollutant, exhaled breath, saliva, urine, or blood, with wireless capability.In the medical area, frequent screening can catch the early development of diseases, reduce the suffering of patients due to late diagnoses, and lower the medical cost. For example, a 96% survival rate has been predicted in breast cancer patients if the frequency of screening is every three months. This frequency cannot be achieved with current methods of mammography due to high cost to the patient and invasiveness (radiation). In the area of detection of medical biomarkers, many different methods, including enzyme-linked immunsorbent assay (ELISA), particle-based flow cytometric assays, electrochemical measurements based on impedance and capacitance, electrical measurement of microcantilever resonant frequency change, and conductance measurement of semiconductor nanostructures, gas chromatography (GC), ion chromatography, high density peptide arrays, laser scanning quantitiative analysis, chemiluminescence, selected ion flow tube (SIFT), nanomechanical cantilevers, bead-based suspension microarrays, magnetic biosensors and mass spectrometry (MS) have been employed. Depending on the sample condition, these methods may show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor.Table of Contents60-GHz CMOS Micro-Radar System-in-Package for Noncontact Vibrations and Noninvasive Measurement of Human Vital Signs and Vibrations; Biomimetric Fractal Nanometals as a Transducer Layer in electrochemical Bio-Sensing; Carbon Nanodots and Its Applications; Rapid Detection of Biotoxin and Pathogen, and Quick Identification of Ligand-Receptor Binding Affinity Using AlGaN/GaN High Electron Mobility Transistors; Stability and Reliability of III-Nitride Based Biosensors; GaN-Based Hydrogen Sensors; Graphene-Based Chemical Sensors; Electronic Micro-Sensors for Metabolite Detection Based on Conductivity Change of Polyaniline; ZnO Nanorod Based Sensors; Scalable Nanomanufacturing of Broadband Antireflection Coatings on Semiconductors; Breath Biomarker Detection by Chemical Sensors; Gallium Nitride Microelectronics for High-Temperature Environments; Emerging Nanotechnology for Strain Gauge Sensor;

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Book SynopsisThis book provides an introduction to the cost modeling for electronic systems that is suitable for advanced undergraduate and graduate students in electrical, mechanical and industrial engineering, and professionals involved with electronics technology development and management. This book melds elements of traditional engineering economics with manufacturing process and life-cycle cost management concepts to form a practical foundation for predicting the cost of electronic products and systems. Various manufacturing cost analysis methods are addressed including: process-flow, parametric, cost of ownership, and activity based costing. The effects of learning curves, data uncertainty, test and rework processes, and defects are considered. Aspects of system sustainment and life-cycle cost modeling including reliability (warranty, burn-in), maintenance (sparing and availability), and obsolescence are treated. Finally, total cost of ownership of systems, return on investment, cost-benefit analysis, and real options analysis are addressed.

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Book SynopsisThe success of spintronics — the science and technology of storing, processing, sensing and communicating information using the quantum mechanical spin degree of freedom of an electron — is critically dependent on the ability to inject, detect and manipulate spins in semiconductors either by incorporating ferromagnetic materials into device architectures or by using external magnetic and electric fields. In spintronics, the controlled generation and manipulation of spin polarization in nonmagnetic semiconductors is required for the design of spin-sensitive devices ranging from spin-qubit hosts, quantum memory and gates, quantum teleporters, spin polarizers and filters, spin-field-effect-transistors, and spin-splitters, among others. One of the major challenges of spintronics is to control the creation, manipulation, and detection of spin polarized currents by purely electrical means. Another challenge is to preserve spin coherence in a device for the longest time or over the longest distance in order to produce reliable spintronic processors. These challenges remain daunting, but some progress has been made recently in overcoming some of the steepest obstacles. This book covers some of the recent advances in the field of spintronics using semiconductors.

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