Description

Book Synopsis
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

Table of Contents
* Ion-Stimulated Processes * Transmutation Doping of Semiconductors by Charged Particles * Doping of Semiconductors Using Radiation Defects * Formation of Buried Porous and Damaged Layers

Radiation Defect Engineering

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    A Hardback by Abrosimova Vera, Vitali V Kozlovski

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      Book details

      Publisher World Scientific Publishing Co Pte Ltd
      Published 21 November 2005
      ISBN-13 9789812565211
      978-9812565211
      ISBN-10 9812565213

      Description

      Book Synopsis
      The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

      Table of Contents
      * Ion-Stimulated Processes * Transmutation Doping of Semiconductors by Charged Particles * Doping of Semiconductors Using Radiation Defects * Formation of Buried Porous and Damaged Layers

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