Electronic devices and materials Books
Nova Science Publishers Inc Recent Advances in Superconductivity Research
Book SynopsisThe authors of this book present current research in the study of superconductivity. Topics discussed in this compilation include the effects of non-magnetic defects in hole doped cuprates; deep cryogenic refrigeration by photons based on the phonon deficit effect in superconductors; superconductivity driven by an anti-polar electric phase in high temperature superconducting materials; superconductive graphite intercalation compounds; a superconducting magnetic field concentrator with nanodimensional branches and slits; magnetic mechanisms of pairing in a strongly correlated electron system of copper oxides; two non-linear mechanisms of correlations between copper carriers in superconductivity and their microscopical descriptions; three dimensionality of the critical state and variational methods for magnetically anisotropic superconductors; theory of multi-band superconductivity; conserving approximation for the self-energy of the t-U-V-J model beyond the Hartree-Fock approximation; and superconductivity as a consequence of an ordering of zero-point oscillations in electron gas.
£159.74
Murphy & Moore Publishing Handbook of Modern Sensors: Emerging Technologies
Book Synopsis
£106.72
Murphy & Moore Publishing Wireless Sensor Networks: A Systems Perspective
Book Synopsis
£105.30
States Academic Press Mems Sensors: Design and Engineering Applications
Book Synopsis
£96.33
States Academic Press Sensors: Devices, Circuits and Systems
Book Synopsis
£110.84
Academic Studies Press Piezoelectric Electromechanical Transducers for
Book SynopsisThe book presents a broad-scope analysis of piezoelectric electromechanical transducers and the related aspects of practical transducer design for underwater applications. It uses an energy method for analyzing transducer problems that provides the physical insight important for the understanding of electromechanical devices. Application of the method is first illustrated with transducer examples that can be modeled as systems with a single degree of freedom, (such as spheres, short cylinders, bars and flexural disks and plates made of piezoelectric ceramics). Thereupon, transducers are modeled as devices with multiple degrees of freedom. In all these cases, results of modeling are presented in the form of equivalent electromechanical circuits convenient for the calculation of the transducers’ operational characteristics. Special focus is made on the effects of coupled vibrations in mechanical systems on transducer performance. The book also provides extensive coverage of acoustic radiation including acoustic interaction between the transducers. The book is inherently multidisciplinary. It provides essential background regarding the vibration of elastic passive and piezoelectric bodies, piezoelectricity, acoustic radiation, and transducer characterization. Scientists and engineers working in the field of electroacoustics and those involved in education in the field will find this material useful not only for underwater acoustics, but also for electromechanics, energy conversion and medical ultrasonics. Part I contains an introduction to the energy method illustrated with examples of one degree of freedom transducers. It is self-sufficient and can be read independently.
£31.49
Academic Studies Press Piezoelectric Electromechanical Transducers for
Book SynopsisThe book presents a broad-scope analysis of piezoelectric electromechanical transducers and the related aspects of practical transducer design for underwater applications. It uses an energy method for analyzing transducer problems that provides the physical insight important for the understanding of electromechanical devices. Application of the method is first illustrated with transducer examples that can be modeled as systems with a single degree of freedom, (such as spheres, short cylinders, bars and flexural disks and plates made of piezoelectric ceramics). Thereupon, transducers are modeled as devices with multiple degrees of freedom. In all these cases, results of modeling are presented in the form of equivalent electromechanical circuits convenient for the calculation of the transducers’ operational characteristics. Special focus is made on the effects of coupled vibrations in mechanical systems on transducer performance. The book also provides extensive coverage of acoustic radiation including acoustic interaction between the transducers. The book is inherently multidisciplinary. It provides essential background regarding the vibration of elastic passive and piezoelectric bodies, piezoelectricity, acoustic radiation, and transducer characterization. Scientists and engineers working in the field of electroacoustics and those involved in education in the field will find this material useful not only for underwater acoustics, but also for electromechanics, energy conversion and medical ultrasonics. Part II contains general information on vibration of mechanical systems, electromechanical conversion in the deformed piezoceramic bodies, and acoustic radiation that can be used independently for treatment transducers of different type.
£96.29
Academic Studies Press Piezoelectric Electromechanical Transducers for
Book SynopsisThe book presents a broad-scope analysis of piezoelectric electromechanical transducers and the related aspects of practical transducer design for underwater applications. It uses an energy method for analyzing transducer problems that provides the physical insight important for the understanding of electromechanical devices. Application of the method is first illustrated with transducer examples that can be modeled as systems with a single degree of freedom, (such as spheres, short cylinders, bars and flexural disks and plates made of piezoelectric ceramics). Thereupon, transducers are modeled as devices with multiple degrees of freedom. In all these cases, results of modeling are presented in the form of equivalent electromechanical circuits convenient for the calculation of the transducers’ operational characteristics. Special focus is made on the effects of coupled vibrations in mechanical systems on transducer performance. The book also provides extensive coverage of acoustic radiation including acoustic interaction between the transducers. The book is inherently multidisciplinary. It provides essential background regarding the vibration of elastic passive and piezoelectric bodies, piezoelectricity, acoustic radiation, and transducer characterization. Scientists and engineers working in the field of electroacoustics and those involved in education in the field will find this material useful not only for underwater acoustics, but also for electromechanics, energy conversion and medical ultrasonics.
£96.29
Clanrye International Optical Sensors: Science, Technology and
Book Synopsis
£110.04
Willford Press Sensors and Actuators: An Engineering Perspective
Book Synopsis
£106.03
O'Reilly Media Make: Volume 59
Book SynopsisA maker's home is their DIY palace. From simple personalization to tricking out a custom connected home, Make: Volume 59 is all about adding maker flair to your abode. In this issue you'll make a NeoPixel map to track the traffic for your morning commute, build a levitating planter straight from the future, and learn how to automatically water your garden.Plus 13 projects inside, including: Build a DIY thermal imaging cameraPrank your friends with a pint-sized, noise-making throwie3D print an articulated blooming flower night lightLearn to code with the BBC micro: bit and Make: CodeAnd more!
£9.64
O'Reilly Media Jumpstarting the Arduino 101
Book SynopsisArduino 101 houses an Intel Curie module which offers a better performance at a lower power footprint. The module has two 32-bit MCUs - an x86 Intel Quark processor and an ARC EM4 processor along with 384kB flash memory and 80kB SRAM. These onboard MCUs combine a variety of new technologies including wireless communication via Bluetooth Low Energy, 6 axis motion sensor with an accelerometer, and a gyroscope. With this book, you will:Explore neural net pattern matching Have the Arduino learn gesture recognitionPerfect for students, teachers, and hobbyists who need just enough information to get started with the Arduino 101
£9.45
O'Reilly Media Make: Volume 61
Book SynopsisChina's hotbed of innovation and creativity, Shenzhen, is making waves around the world. In our cover story, Shenzhen native Naomi Wu talks about bringing open-source hardware to China and how Chinese culture influences her maker ethos. Then read about how five more women are each building their own unique maker experiences in Shenzhen. Plus, build these projects:3D print a flyweight FPV quadcopter Create LED shadow art with a box of mylar tubes Add a cheap radar set up to your robot Give your face a fun house look with the easy BigfaceboxAnd more
£7.59
O'Reilly Media Make – Volume 62
Book SynopsisThe link between cyberpunk and making has always been strong, sharing the If you can't hack it, you don't own it ethos. In this issue of Make:, we show you the newest emerging technologies, how to get into things you shouldn't with our spy tech roundup, and how to repurpose useful parts from discarded electronics. We also help you answer the crucial question: are you still a cyberpunk? Inside you will find 13 projects, including how to: Build a wheelchair for your furry friend out of hardware store partsText your bestie with a casual raise of the eyebrow and a muscle sensorCraft a cheap, easy-to-assemble rubber-band helicopter out of household supplies and a 2-liter soda bottleMake super cute papercraft succulents to decorate your spaceAnd more!
£7.59
O'Reilly Media Make – Volume 63
Book Synopsis
£7.99
O'Reilly Media Make: Volume 65
Book Synopsis
£7.99
Make Community, LLC Make: Volume 87
Book Synopsis
£13.49
IOP Publishing RADIATIVE PROPERTIES OF SEMICONDUCTORSPB
Book Synopsis
£23.75
Independently Published Electrons and Holes put to work in the
Book Synopsis
£16.99
Royal Society of Chemistry Organic Photonics and Electronics: Faraday
Book SynopsisOrganic semiconductors (OSCs), based on pi-conjugated molecules and macromolecules, are revolutionising the electronics industry. The most topical and potentially lucrative applications to date include organic light emitting diode (OLED) displays and lighting, organic photovoltaics (OPVs) and organic field effect transistors (OFETs). Applications for these technologies are varied and include sensing, medical diagnostics, artificial assemblies, computing and information and communication technologies. This discussion encompasses a range of topical subjects, centred on the theme of organic electronics and photonics, focussing on four specific topics: organic photovoltaics and energy, organic lasers, bioelectronics and sensors and molecular electronics, representing the most exciting developments in organic electronics research.Table of ContentsSpiers Memorial Lecture: Organic Electronics: an Organic Materials Perspective; Exploring Coherent Transport Through P-stacked Systems for Molecular Electronic Devices; A Quantum Chemical Study from a Molecular Transport Perspective: Ionization and Electron Attachment Energies for Species Often Used to Fabricate Single-molecule Junctions; Breaking the Simple Proportionality Between Molecular Conductances and Charge Transfer Rates; Molecular Diodes Enabled by Quantum Interference; Measurement and Control of Detailed Electronic Properties in a Single Molecule Break Junction; A Computational Study of Potential Molecular Switches That Exploit Baird's Rule on Excited-state Aromaticity and Antiaromaticity; Molecular Electronics: General Discussion; Organic Semiconductor Distributed Feedback Laser Pixels for Lab-on-a-chip Applications Fabricated by Laser-assisted Replication; Rigid Biimidazole Ancillary Ligands as an Avenue to Bright Deep Blue Cationic Iridium(Iii) Complexes; Lasing of Tamm States in Highly Efficient Organic Devices Based on Small-molecule Organic Semiconductors; Dynamic Amplification of Light Signals in Photorefractive Ferroelectric Liquid Crystalline Mixtures; Organic Semiconducting Single Crystals as Solid-state Sensors for Ionizing Radiation; Photonics: General Discussion; Parameter Free Calculation of the Subgap Density of States in Poly(3-hexylthiophene); in Situ Formation of Organic–inorganic Hybrid Nanostructures for Photovoltaic Applications; Computational Investigation of Hole Mobilities in Organic Semiconductors: Comparison of Single Crystal Structures and Surface Adsorbed Clusters; Supramolecular Control of Organic P/n-heterojunctions by Complementary Hydrogen Bonding; Design of Donor–acceptor Star-shaped Oligomers for Efficient Solution-processible Organic Photovoltaics; Novel Electrochemiluminescent Materials for Sensor Applications; Hybrid Organic Semiconductor Lasers for Bio-molecular Sensing; Bio-sorbable, Liquid Electrolyte Gated Thin-film Transistor Based on a Solutionprocessed Zinc Oxide Layer; Characterization and Simulation of Electrolyte-gated Organic Field-effect Transistors; Organic Bioelectronics: General Discussion; Organic Electronics and Photonics: Concluding Remarks.
£161.50
Royal Society of Chemistry Unconventional Thin Film Photovoltaics
Book SynopsisCovering both organic materials, where recent advances in the understanding of device physics is driving progress, and the newly emerging field of mixed halide perovskites, which are challenging the efficiencies of conventional thin film PV cells, this book provides a balanced overview of the experimental and theoretical aspects of these two classes of solar cell. The book explores both the experimental and theoretical aspects of these solar cell classes. Emphasis is placed on understanding the fundamental physics of the devices. The book also discusses modelling over many length scales, from nano to macro. The first book to cover perovskites, this is an important reference for industrialists and researchers working in energy technologies and materials.Table of ContentsOrganic-inorganic Hybrid Nanostructured Solar Cells; Stability and Efficiency of Organic Polymeric Solar Cells; Small Molecule Organic Solar Cells; Multi-dimensional Drift-diffusion and Monte Carlo Modelling of Organic POV; Morphology and Transport in Organic PV; Drift Diffusion and Optical Modelling of Organic PV; Modelling of Perovskite Solar Cells; Electronic Structure of Perovskites; Perovskites as Solar Absorbers; Interfaces in Perovskite Solar Cells; Organic Photovoltaics: Electronic Structure and Interfaces.
£160.55
Royal Society of Chemistry Thermoelectric Materials and Devices
Book SynopsisThermal energy harvesting is predicted to become a global, billion-pound market by 2020. This book provides a current perspective of recent developments and trends within thermoelectric materials and devices for power energy harvesting applications. The book highlights the potential of thermoelectrics in the context of a low carbon energy economy, and features in-depth coverage of a range of different fabrication methods for thermoelectric materials including electrodeposition. Topics covered include layered and pseudo-layered materials, thermoelectric oxides, nano- and micro-fabrication techniques, high-throughput thermoelectric measurement techniques and power mining. This book is ideal for researchers and industrialists in materials science.Table of ContentsZintl Phases: Recent Developments in Thermoelectrics and Future Outlook; Chalcogenide Thermoelectric Materials; Thermoelectric Oxides; Nano- and Micro-fabrication Techniques for Improving Thermoelectric Materials and Generators; Review of the Methods for Thermal Conductivity Measurements Most Appropriate for Thermoelectric Materials; High-Throughput Thermoelectric Measurement Techniques; System Design Considerations for Thermoelectric Energy Recovery; Electrodeposition of Thermoelectric Materials; Automotive Power Harvesting/Thermoelectric Applications
£151.05
Institution of Engineering and Technology Characterization of Wide Bandgap Power
Book SynopsisAt the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.Table of Contents Chapter 1: Introduction Chapter 2: Pulsed static characterization Chapter 3: Junction capacitance characterization Chapter 4: Fundamentals of dynamic characterization Chapter 5: Gate drive for dynamic characterization Chapter 6: Layout design and parasitic management Chapter 7: Protection design for double pulse test Chapter 8: Measurement and data processing for dynamic characterization Chapter 9: Cross-talk consideration Chapter 10: Impact of three-phase system Chapter 11: Topology consideration Appendix A: Recommended equipment and components list for DPT setup Appendix B: Data processing code for dynamic characterization
£118.75
ISTE Ltd and John Wiley & Sons Inc Analog Devices and Circuits 1: Analog Devices
Book SynopsisAt the end of the Second World War, a new technological trend was born: integrated electronics. This trend relied on the enormous rise of integrable electronic devices. Analog Devices and Circuits is composed of two volumes: the first deals with analog components, and the second with associated analog circuits. The goal here is not to create an overly comprehensive analysis, but rather to break it down into smaller sections, thus highlighting the complexity and breadth of the field. This first volume, after a brief history, describes the two main devices, namely bipolar transistors and MOS, with particular importance given to the modeling aspect. In doing so, we deal with new devices dedicated to radio frequency, which touches on nanoelectronics. We will also address some of the notions related to quantum mechanics. Finally, Monte Carlo methods, by essence statistics, will be introduced, which have become more and more important since the middle of the twentieth century. The second volume deals with the circuits that "use" the analog components that were introduced in Volume 1. Here, a particular emphasis is placed on the main circuit: the operational amplifier.Table of ContentsPreface ix Introduction xiii Chapter 1 Bipolar Junction Transistor 1 1.1 Introduction 1 1.1.1 A schematic technological embodiment of an integrated bipolar junction transistor 2 1.2 Transistor effect 4 1.2.1 Flows and currents 5 1.2.2 Compromises for bipolar junction transistor 6 1.2.3 Configurations and associated current gains 7 1.3 Bipolar junction transistor: some calculations 9 1.3.1 Various modes of operation 15 1.4 The NPN transistor; Ebers–Moll model (1954: Jewell James Ebers and John L Moll) 16 1.4.1 Gummel curves 18 1.4.2 Consideration of second-order effects for the static model 19 1.4.3 Early curves 20 1.4.4 Base width modulation; Early effect 20 1.4.5 Ebers–Moll model wide signals 22 1.4.6 Current gain 26 1.5 Simple bipolar junction transistor model 27 1.6 Network of static characteristics of the bipolar junction transistor 27 1.6.1 Common emitter configuration 31 1.6.2 Common emitter configuration with emitter degeneration 34 1.7 Some applications 35 1.7.1 Current mirrors 35 1.7.2 Differential pair 38 1.7.3 Output stage 41 1.8 Application: operational amplifier 43 1.9 BiCMOS 43 Chapter 2 Mosfet 45 2.1 Introduction 45 2.1.1 Base structure 45 2.1.2 Working principle 46 2.2 MOS capability: electric model and curve C(V) 47 2.3 Different types of MOS transistors 49 2.4 A CMOS technological process 50 2.5 Electric modeling of the NMOS enhancement transistor 52 2.6 Off state 52 2.7 Linear or ohmic or unsaturated regime 52 2.7.1 Saturation regime 53 2.7.2 High saturation velocity 53 2.7.3 Static characteristics 54 2.8 Applications 56 2.8.1 Digital inverter 56 2.8.2 Active resistor 58 2.8.3 MOS Single current mirror 59 2.8.4 MOS differential amplifier 60 2.9 Explained technological steps of a CMOS 60 Chapter 3 Devices Dedicated to Radio Frequency: Toward Nanoelectronics 75 3.1 Introduction 75 3.2 Model for HBT SiGeC and device structure 76 3.2.1 Modeling the drift–diffusion equation 76 3.3 MOS of the future? 83 3.3.1 Introduction 83 3.3.2 Dgmos 84 3.3.3 Transport in nanoscale MOSFETs 85 3.3.4 Numerical methods 87 3.4 Conclusion 111 3.5 MATLAB use 112 3.5.1 Computer-aided modelling and simulations: synopsis 112 3.5.2 Calculation of the second elementary member ρ 1 139 3.6 Conclusion 185 Appendix 187 References 211 Index 213
£95.40
World Scientific Europe Ltd Multi-objective Design Of Antennas Using
Book SynopsisThis book addresses computationally-efficient multi-objective optimization of antenna structures using variable-fidelity electromagnetic simulations, surrogate modeling techniques, and design space reduction methods. Based on contemporary research, it formulates multi-objective design tasks, highlights related challenges in the context of antenna design, and discusses solution approaches. Specific focus is on providing methodologies for handling computationally expensive simulation models of antenna structures in the sense of their multi-objective optimization. Also given is a summary of recent developments in antenna design optimization using variable-fidelity simulation models. Numerous examples of real-world antenna design problems are provided along with discussions and recommendations for the readers interested in applying the considered methods in their design work.Written with researchers and students in mind, topics covered can also be applied across a broad spectrum of aeronautical, mechanical, electrical, biomedical and civil engineering. It is of particular interest to those dealing with optimization, computationally expensive design tasks and simulation-driven design.
£99.90
World Scientific Europe Ltd Quantum States And Scattering In Semiconductor
Book SynopsisThis book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.
£88.20
World Scientific Europe Ltd Quantum States And Scattering In Semiconductor
Book SynopsisThis book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.
£57.00
World Scientific Europe Ltd Coupled Diffusion Of Impurity Atoms And Point
Book SynopsisThis work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
£121.50
World Scientific Europe Ltd Surface Photovoltage Analysis Of Photoactive
Book SynopsisSurface photovoltage (SPV) techniques provide information about photoactive materials with respect to charge separation in space. This book aims to share experience in measuring and analyzing SPV signals and addresses researchers and developers interested in learning more about and in applying SPV methods. For this purpose, basics about processes in photoactive materials and principles of SPV measurements are combined with examples from research and development over the last two decades.SPV measurements with Kelvin probes, fixed capacitors, electron beams and photoelectrons are explained. Details are given for continuous, modulated and transient SPV spectroscopy. Simulation principles of SPV signals by random walks are introduced and applied for small systems. Application examples are selected for the characterization of silicon surfaces, gallium arsenide layers, electronic states in colloidal quantum dots, transport phenomena in metal oxides and local charge separation across photocatalytic active crystallites.
£85.50
Packt Publishing Limited ESP8266 Home Automation Projects
Book SynopsisUnleash the power of the ESP8266 and build a complete home automation system with it. About This Book • Harness the power of the ESP8266 Wi-Fi chip to build an effective Home Automation System • Learn about the various ESP8266 modules • Configuring the ESP8266 and making interesting home automation projects • A step-by-step guide on the ESP8266 chip and how to convert your home into a smart home. Who This Book Is For This book is targeted at people who want to build connected and inexpensive home automation projects using the ESP8266 Wi-Fi chip, and to completely automate their homes. A basic understanding of the board would be an added advantage What You Will Learn • Get, compile, install, and configure an MQTT server • Use the Wi-Fi connectivity feature to control appliances remotely • Control several home appliances using the ESP8266 Wi-Fi chip • Control and monitor your home from the cloud using ESP8266 modules • Stream real-time data from the ESP8266 to a server over WebSockets • Create an Android mobile application for your project In Detail The ESP8266 is a low-cost yet powerful Wi-Fi chip that is becoming more popular at an alarming rate, and people have adopted it to create interesting projects. With this book, you will learn to create and program home automation projects using the ESP8266 Wi-Fi chip. You will learn how to build a thermostat to measure and adjust the temperature accordingly and how to build a security system using the ESP8266. Furthermore, you will design a complete home automation system from sensor to your own cloud. You will touch base on data monitoring, controlling appliances, and security aspects. By the end of the book, you will understand how to completely control and monitor your home from the cloud and from a mobile application. You will be familiar with the capabilities of the ESP8266 and will have successfully designed a complete ready-to-sell home automated system. Style and approach A practical book that will cover independent home automation projects.
£26.59
Royal Society of Chemistry Electrochromic Smart Materials: Fabrication and
Book SynopsisInterest in and attention on electrochromic technology has been growing since the 1970s, with the advent of numerous electrochromic devices in commercial and industrial settings. Many laboratory-based colour-changing electrochromic device prototypes have surfaced following research breakthroughs in recent years, and the consumer market has been expanding continuously. Electrochromic devices have a wide range of applications, such as displays, self-dimming mirrors for automobiles, electrochromic e-skins, textiles, and smart windows for energy-efficient buildings. Electrochromic Smart Materials covers major topics related to the phenomenon of electrochromism, including fundamental principles, different classes and subclasses of electrochromic materials, and device processing and manufacturing. It also highlights a broad range of existing and potential applications of electrochromic devices, with an analysis of the current market needs and future trends. Providing a comprehensive overview of the field, this book will serve as introductory reading to those new to this area, as well as a resource providing detailed, in-depth knowledge and insights to the seasoned audience. Featuring contributions from researchers across the globe, it will be of interest to postgraduate students and researchers in both academia and industry interested in smart design, materials science and engineering.Table of ContentsIntroduction to Electrochromism; Fundamentals of Electrochromic Materials and Devices; Conjugated Polymers for Electrochromic Applications; Donor–Acceptor Type Conjugated Electrochromic Polymers; Electrochromic, Electrofluorescent and Lightinduced Coloration Effects; Bistable Electrochromic Windows from Conjugated Polymers; Electroluminochromism: Classical Materials and New Developments; Donor–Acceptor Electrochromic Conjugated Polymers with Different Structures; Electrochromic and Electrofluorescence Liquid Crystals; Electrochemical Properties and Electrochromic Device; Applications of Polycarbazole Derivatives; Arylamine-based High Performance Polymers for Electrochromic Applications; Viologens-based Electrochromic Materials and Devices; Metallo-supramolecular Polymers with Electrochromic Properties; Nanostructured Electrochromic Materials; Electrodeposition Based Electrochromic System; Electrochromic Smart Windows for Green Building Applications
£170.05
Royal Society of Chemistry Printed Electronics Technologies
Book SynopsisModern printing technology has paved the way for the fabrication of thin inexpensive electronics and is now established as a topic taught on advanced level courses across materials science and engineering. The properties of printed electronics, such as thin-form factor, flexibility, stretchability, portability, and rollability mean that they have a wide range of applications, including in wearable devices, smart packaging, healthcare, and the automotive industry. This book describes the key printing technologies for printed electronics. Chapters cover principles and mechanisms, techniques, inorganic and organic materials, substrates, post-treatment and applications of printed electronics technologies. Written by a leader in the field, this title will be essential reading for students on courses across materials science, electronics science, manufacturing and engineering, as well as those with an interest in printed electronics.Table of ContentsIntroduction to Printed Electronics;Principle and Mechanism of Printed Electronics;Printing Techniques with a Printing Master;Inkjet Printed Electronics Technology;Printable Inorganic Materials for Printed Electronics;Printable Organic Materials for Printed Electronics;Conventional Substrates for Printed Electronics;Post-treatment for Printed Electronics;Printed Electronics Applications: Conductive Tracks and Patterns, Printed Circuits, Functional Electrodes and Flexible Heaters;Printed Electronics Applications: Microelectronic, Optoelectronic Devices and Displays;Printed Electronics Applications: Energy Conversion and Storage Devices;Printed Electronics Applications: Sensors, Actuators and Biosensors;Integrated Printed Electronics Systems and Applications;Fully-printed Electronics Technologies;Outlook and Prospects
£137.75
Royal Society of Chemistry Anisotropic 2D Materials and Devices
Book SynopsisPresenting recent progress in anisotropic 2D materials research, reader is introduced to phosphorene and its arsenic alloys, monochalcogenides of group IV elements in the form of MX (M = Ge, Sn and X = S, Se, Te), low-symmetry transition-metal dichalcogenide (TMD) materials such as rhenium disulphide (ReS2) and rhenium diselenide (ReSe2), and organic 2D materials. Providing detailed synthesis protocols and characterization techniques for these various anisotropic 2D materials, readers will learn their specific technological scopes for next generation electronics, optoelectronics and biomedical applications, challenges and future directions. Edited by an leading expert, contributors cover enhanced many-body interactions and high binding energy 1D particle dynamics to showcase design of high-performance optoelectronic devices; anisotropic polariton for designing polariton based laser systems; applications in bio-imaging, cancer diagnosis and therapies, drug delivery and release, and antibacterial performance; and finally, their potential in nano-electro-mechanical devices. Considering all these areas in detail, this book is a useful reference to the scientific communities working in related research fields, especially for materials scientists, chemists, physicists and electronics/electrical/energy engineers. This book may also be of use to those in chemical academia and industry more broadly.Table of ContentsIntroduction;Defect Engineering in Layered Black Phosphorus for Multi-Functional Optoelectronics;Anisotropic Polaritons in Layered Two-dimensional (2D) Materials;Highly Enhanced Many-body Interactions in Anisotropic 2D Semiconductors;Organic Anisotropic 2D Materials for Next-generation Optoelectronics;Next Generation Electronics Based on Anisotropic 2D Materials;A Two-dimensional Phosphorene-based Hydrogel Using Near Infrared Light to Release Drugs for Cancer Treatment
£141.55
Royal Society of Chemistry Chemistry of Semiconductors
Book SynopsisSilicon, germanium, and compound semiconductors, among which silicon carbide, gallium arsenide and gallium nitride are the most representative examples, play a withstanding role in the world economy, since they were and still are the keys for the advancement of modern microelectronics and optoelectronics, with a wealth of sister technologies relevant for renewable energy solutions and advanced spectroscopy applications. This textbook will cover the synthesis, spectroscopic characterisation and optimisation of semiconductor materials, accounting for the most recent developments in the field of nanomaterials. It will be of great interest for scholars and instructors to have the chance to look at semiconductor science with a basic chemical approach. Homopolar semiconductors (silicon and germanium) are examined first, considering the role of these materials in modern microelectronics and in photovoltaics. Compound semiconductors (for example, carbides, arsenides, tellurides, nitrides) are also discussed in detail, considering that the chemistry of their preparation is even more critical and their role in photonic applications is strategic. Authored by a leading expert in the field, this easily accessible text is appropriate for advanced undergraduates and postgraduates studying materials science and technology.Table of ContentsThermochemistry of Semiconductors;Role of Defects, Impurities and Deviations from the Stoichiometry in the Optoelectronic Properties of Semiconductors;Physico-chemical Aspects of Growth Processes of Elemental and Compound Semiconductors;Chemistry of Semiconductor Impurity Processing;Semiconductor Nanomaterials
£80.75
Royal Society of Chemistry Advanced Memory Technology: Functional Materials
Book SynopsisAdvanced memory technologies are impacting the information era, representing a vibrant research area of huge interest in the electronics industry. The demand for data storage, computing performance and energy efficiency is increasing exponentially and will exceed the capabilities of current information technologies. Alternatives to traditional silicon technology and novel memory principles are expected to meet the need of modern data-intensive applications such as “big data” and artificial intelligence (AI). Functional materials or methodologies may find a key role in building novel, high speed and low power consumption computing and data storage systems. This book covers functional materials and devices in the data storage areas, alongside electronic devices with new possibilities for future computing, from neuromorphic next generation AI to in-memory computing. Summarizing different memory materials and devices to emphasize the future applications, graduate students and researchers can systematically learn and understand the design, materials characteristics, device operation principles, specialized device applications and mechanisms of the latest reported memory materials and devices.Table of ContentsMemory Technology: Developments, Fundamentals, and Future Trends;Biomemristors as the Next Generation Memory Devices;Organic Resistive Memories for Neuromorphic Electronics;Low Frequency 1/f Conductance Noise in Memristors;Electrical Bistability by Creating Internal Electrical Field and Its Application in Emerging Two-terminal Electronic Memory Devices;Memory Devices Based on Low-dimensional Materials;Development, Challenges, and Future Opportunities of Spintronic Memory Devices;Dual-gate Ferroelectric Field-effect Transistors: An Emerging Computational Memory for Advanced Logic Operations;Stochastic Emerging Resistive Memories for Unconventional Computing;Indium-Gallium-Zinc Oxide (IGZO)-based ReRAM: Material Overview, Latest Development and Technology Perspective;Emerging Memristive Artificial Neurons for Energy-efficient Neuromorphic Electronic Systems;Memory, Memristive, and Neuromorphic Devices Based on Two-dimensional Transition Metal Dichalcogenides;In-sensor Computing Based on Two-terminal Optoelectronic Memristors;Memory Devices and Artificial Synapses with 2D Materials;Polymer-based Transistor-type Memory and Artificial Synapses;Amorphous Oxide Semiconductor Memristors: Brain-inspired Computation;Working Dynamics in Low-dimensional Material-based Neuromorphic Devices;Halide Perovskites for Neuromorphic Computing;Silicon Oxide-based CBRAM Memory and Neuromorphic Properties;Oxide Neuromorphic Transistors for Brain-like Computing;Sensing–Storage–Computing Integrated Devices Based on Carbon Nanomaterials;Resistive Switching-based Neuromorphic Devices for Artificial Neural Network;Silicon-based Heterostructures for Optoelectronic Synaptic Devices;Hybrid Devices for Neuromorphic Applications;Algorithmic Optimisation for Memristive Deep Learning Accelerators;Memristive Devices for Neuromorphic and Deep Learning Applications
£189.05
Institution of Engineering and Technology Technologies and Techniques in Gait Analysis:
Book SynopsisGait analysis is the study of the walking or running pattern of an individual. This can include spatial and temporal measurements such as step length, stride length and speed along with angular measurements of various joints and the interplay between various parts like the foot, hip, pelvis or spine when walking. Gait analysis can be used to assess clinical conditions and design effective rehabilitation; for example, following limb injury or amputation, or other disorders such as a stroke or Parkinson's diagnosis. It can be used to influence intervention decisions, such as whether a patient should undergo surgery, further physiotherapy, or begin a particular treatment regime. Gait analysis can also be used in sports science to monitor and review performance and technique. Gait can be recorded in a variety of ways, including pressure sensors, force plates, in-shoe pressure systems, through marker-based or marker-less systems using various cameras or sensors to calculate body positions in a set sequence of movements. This book focuses on both the hardware systems for collecting data as well as data visualisation and mathematical models for interpreting the data. It is written by a range of international researchers from academia, industry, and clinical settings, providing a complete overview of gait analysis technologies suitable for an audience of engineers in rehabilitation technologies or other biomedical engineering fields.Table of Contents Chapter 1: Introduction to gait analysis Chapter 2: Gait analysis - a historical perspective Chapter 3: Gait analysis - kinematics Chapter 4: Gait analysis - kinetics Chapter 5: Assessment of muscle function Chapter 6: Considerations for data analysis Chapter 7: Novel technologies for gait analysis Chapter 8: Clinical gait analysis Chapter 9: Gait analysis in rehabilitation Chapter 10: Forensic gait analysis - Is there a case? Chapter 11: Future of gait analysis
£114.00
Imperial College Press Selected Semiconductor Research
Book SynopsisThis unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering.Table of ContentsDefects in Semiconductors; Semiconductor Band Structures; Analog Integrated Circuit Design; CMOS Device Reliability; CMOS Technology; Nano CMOS Device Quantum Simulation.
£148.50
ISTE Ltd and John Wiley & Sons Inc Solid-State Physics for Electronics
Book SynopsisDescribing the fundamental physical properties of materials used in electronics, the thorough coverage of this book will facilitate an understanding of the technological processes used in the fabrication of electronic and photonic devices. The book opens with an introduction to the basic applied physics of simple electronic states and energy levels. Silicon and copper, the building blocks for many electronic devices, are used as examples. Next, more advanced theories are developed to better account for the electronic and optical behavior of ordered materials, such as diamond, and disordered materials, such as amorphous silicon. Finally, the principal quasi-particles (phonons, polarons, excitons, plasmons, and polaritons) that are fundamental to explaining phenomena such as component aging (phonons) and optical performance in terms of yield (excitons) or communication speed (polarons) are discussed.Table of ContentsForeword xiii Introduction xv Chapter 1. Introduction: Representations of Electron-Lattice Bonds 1 1.1. Introduction 1 1.2. Quantum mechanics: some basics 2 1.3. Bonds in solids: a free electron as the zero order approximation for a weak bond; and strong bonds 6 1.4. Complementary material: basic evidence for the appearance of bands in solids 10 Chapter 2. The Free Electron and State Density Functions 17 2.1. Overview of the free electron 17 2.2. Study of the stationary regime of small scale (enabling the establishment of nodes at extremities) symmetric wells (1D model) 19 2.3. Study of the stationary regime for asymmetric wells (1D model) with L a favoring the establishment of a stationary regime with nodes at extremities 23 2.4. Solutions that favor propagation: wide potential wells where L 1 mm, i.e. several orders greater than inter-atomic distances 24 2.5. State density function represented in energy space for free electrons in a 1D system 27 2.6. From electrons in a 3D system (potential box) 32 2.7. Problems 40 Chapter 3. The Origin of Band Structures within the Weak Band Approximation 55 3.1. Bloch function 55 3.2. Mathieu’s equation 59 3.3. The band structure 66 3.4. Alternative presentation of the origin of band systems via the perturbation method 70 3.5. Complementary material: the main equation 79 3.6. Problems 81 Chapter 4. Properties of Semi-Free Electrons, Insulators, Semiconductors, Metals and Superlattices 87 4.1. Effective mass (m*) 87 4.2. The concept of holes 93 4.3. Expression for energy states close to the band extremum as a function of the effective mass 96 4.4. Distinguishing insulators, semiconductors, metals and semi-metals 97 4.5. Semi-free electrons in the particular case of super lattices 107 4.6. Problems 116 Chapter 5. Crystalline Structure, Reciprocal Lattices and Brillouin Zones 123 5.1. Periodic lattices 123 5.2. Locating reciprocal planes 125 5.3. Conditions for maximum diffusion by a crystal (Laue conditions) 128 5.4. Reciprocal lattice 133 5.5. Brillouin zones 135 5.6. Particular properties 137 5.7. Example determinations of Brillouin zones and reduced zones 141 5.8. Importance of the reciprocal lattice and electron filling of Brillouin zones by electrons in insulators, semiconductors and metals 146 5.9. The Fermi surface: construction of surfaces and properties 149 5.10. Conclusion. Filling Fermi surfaces and the distinctions between insulators, semiconductors and metals 154 5.11. Problems 156 Chapter 6. Electronic Properties of Copper and Silicon 173 6.1. Introduction 173 6.2. Direct and reciprocal lattices of the fcc structure 173 6.3. Brillouin zone for the fcc structure 178 6.4. Copper and alloy formation 181 6.5. Silicon 185 6.6. Problems 190 Chapter 7. Strong Bonds in One Dimension 199 7.1. Atomic and molecular orbitals 199 7.2. Form of the wave function in strong bonds: Floquet’s theorem 210 7.3. Energy of a 1D system 215 7.4. 1D and distorted AB crystals 224 7.5. State density function and applications: the Peierls metal-insulator transition 228 7.6. Practical example of a periodic atomic chain: concrete calculations of wave functions, energy levels, state density functions and band filling 233 7.7. Conclusion 239 7.8. Problems 241 Chapter 8. Strong Bonds in Three Dimensions: Band Structure of Diamond and Silicon 249 8.1. Extending the permitted band from 1D to 3D for a lattice of atoms associated with single s-orbital nodes (basic cubic system, centered cubic, etc.) 250 8.2. Structure of diamond: covalent bonds and their hybridization 258 8.3. Molecular model of a 3D covalent crystal (atoms in sp3-hybridization states at lattice nodes) 268 8.4. Complementary in-depth study: determination of the silicon band structure using the strong bond method 275 8.5. Problems 287 Chapter 9. Limits to Classical Band Theory: Amorphous Media 301 9.1. Evolution of the band scheme due to structural defects (vacancies, dangling bonds and chain ends) and localized bands 301 9.2. Hubbard bands and electronic repulsions. The Mott metal–insulator transition 303 9.3. Effect of geometric disorder and the Anderson localization 311 9.4. Conclusion 322 9.5. Problems 324 Chapter 10. The Principal Quasi-Particles in Material Physics 335 10.1. Introduction 335 10.2. Lattice vibrations: phonons 336 10.3. Polarons 352 10.4. Excitons 364 10.5. Plasmons 368 10.6. Problems 373 Bibliography 385 Index 387
£201.35
ISTE Ltd and John Wiley & Sons Inc Model Driven Engineering for Distributed
Book SynopsisModel-based development methods, and supporting technologies, can provide the techniques and tools needed to address the dilemma between reducing system development costs and time, and developing increasingly complex systems. This book provides the information needed to understand and apply model-drive engineering (MDE) and model-drive architecture (MDA) approaches to the development of embedded systems. Chapters, written by experts from academia and industry, cover topics relating to MDE practices and methods, as well as emerging MDE technologies. Much of the writing is based on the presentations given at the Summer School “MDE for Embedded Systems” held at Brest, France, in September 2004.Table of ContentsChapter Summary xi Chapter 1. Model Transformation: A Survey of the State of the Art 1 Tom MENS 1.1. Model-driven engineering 1 1.2. Model transformation 2 1.3. Model transformation languages 5 1.4. Model transformation activities 8 1.5. Conclusion 14 1.6. Acknowledgements 14 1.7. Bibliography 15 Chapter 2. Model-Based Code Generation 21 Chris RAISTRICK 2.1. Introduction 21 2.2. The model-driven architecture (MDA) process 22 2.3. The automated approach to code generation 23 2.4. Domain modeling 25 2.5. The executable UML (xUML) formalism 29 2.6. System generation 31 2.7. Executable UML to code mappings 34 2.8. Conclusions 41 2.9. Bibliography 42 Chapter 3. Testing Model Transformations: A Case for Test Generation from Input Domain Models 43 Benoit BAUDRY 3.1. Introduction 43 3.2. Challenges for testing systems with large input domains 46 3.3. Selecting test data in large domains 52 3.4. Metamodel-based test input generation 58 3.5. Conclusion 67 3.6. Acknowledgements 68 3.7. Bibliography 68 Chapter 4. Symbolic Execution-Based Techniques for Conformance Testing 73 Christophe GASTON, Pascale LE GALL, Nicolas RAPIN and Assia TOUIL 4.1. Context 73 4.2. Input output symbolic transition systems 79 4.3. Symbolic execution 84 4.4. Conformance testing for IOSTS 87 4.5. Concluding remarks 96 4.6. Bibliography 101 Chapter 5. Using MARTE and SysML for Modeling Real-Time Embedded Systems 105 Huascar ESPINOZA, Daniela CANCILA, Sébastien GÉRARD and Bran SELIC 5.1. Introduction 105 5.2. Background 108 5.3. Scenarios of combined usage 113 5.4. Combination Strategies 125 5.5. Related work 130 5.6. Conclusion 133 5.7. Acknowledgements 134 5.8. Bibliography 134 Chapter 6. Software Model-based Performance Analysis 139 Dorina C. PETRIU 6.1. Introduction 139 6.2. Performance models 142 6.3. Software model with performance annotations 148 6.4. Mapping from software to performance model 155 6.5. Using a pivot language: Core Scenario Model (CSM) 158 6.6. Case study performance model 160 6.7. Conclusions 162 6.8. Acknowledgements 163 6.9. Bibliography 163 Chapter 7. Model Integration for Formal Qualification of Timing-Aware Software Data Acquisition Components 167 Jean-Philippe BABAU, Philippe DHAUSSY and Pierre-Yves PILLAIN 7.1. Introduction 167 7.2. System modeling 170 7.3. Variation points modeling 182 7.4. Experiments and results 189 7.5. Conclusion 194 7.6. Bibliography 195 Chapter 8. SoC/SoPC Development using MDD and MARTE Profile 201 Denis AULAGNIER, Ali KOUDRI, Stéphane LECOMTE, Philippe SOULARD, Joël CHAMPEAU, Jorgiano VIDAL, Gilles PERROUIN and Pierre LERAY 8.1. Introduction 201 8.2. Related works 203 8.3. MOPCOM process and models 206 8.4. Application 210 8.5. System analysis 211 8.6. Abstract modeling level 214 8.7. Execution modeling level 216 8.8. Detailed modeling level 220 8.9. Tooling Support 223 8.10. HDL Code Generation 225 8.11. Conclusion 228 8.12. Acknowledgements 229 8.13. Bibliography 229 List of Authors 233 Index 237
£132.00
ISTE Ltd and John Wiley & Sons Inc The Wigner Monte Carlo Method for Nanoelectronic
Book SynopsisThe emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.Table of ContentsSymbols ix Abbreviations xiii Introduction xv Acknowledgements xxi Chapter 1. Theoretical Framework of Quantum Transport in Semiconductors and Devices 1 1.1. The fundamentals: a brief introduction to phonons, quasi-electrons and envelope functions 2 1.2. The semi-classical approach of transport 11 1.3. The quantum treatment of envelope functions 16 1.4. The two main problems of quantum transport 29 Chapter 2. Particle-based Monte Carlo Approach to Wigner-Boltzmann Device Simulation 57 2.1. The particle Monte Carlo technique to solve the BTE 59 2.2. Extension of the particle Monte Carlo technique to the WBTE: principles 71 2.3. Simple validations via two typical cases 83 2.4. Conclusion 86 Chapter 3. Application of the Wigner Monte Carlo Method to RTD, MOSFET and CNTFET 89 3.1. The resonant tunneling diode (RTD) 90 3.2. The double-gate metal-oxide-semiconductor field-effect transistor (DG-MOSFET) 99 3.3. The carbon nanotube field-effect transistor (CNTFET) 134 3.4. Conclusion 148 Chapter 4. Decoherence and Transition from Quantum to Semi-classical Transport 151 4.1. Simple illustration of the decoherence mechanism 152 4.2. Coherence and decoherence of Gaussian wave packets in GaAs 157 4.3. Coherence and decoherence in RTD: transition between semi-classical and quantum regions 171 4.4. Quantum coherence and decoherence in DG-MOSFET 175 4.5. Conclusion 180 Conclusion 183 Appendix A. Average Value of Operators in the Wigner Formalism 187 Appendix B. Boundaries of the Wigner Potential 189 Appendix C. Hartree Wave Function 191 Appendix D. Asymmetry Between Phonon Absorption and Emission Rates 193 Appendix E. Quantum Brownian Motion 195 Appendix F. Purity in the Wigner formalism 201 Appendix G. Propagation of a Free Wave Packet Subject to Quantum Brownian Motion 203 Appendix H. Coherence Length at Thermal Equilibrium 205 Bibliography 207 Index 241
£132.00
ISTE Ltd and John Wiley & Sons Inc Nanoscale CMOS: Innovative Materials, Modeling
Book SynopsisThis book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.Trade Review"All illustrations including half-tone impressions, graphs, tables and mathematical equations are presented in a manner the design and execution of which are as excellent as the material they go to serve and illustrate." (Current Engineering Practice, 2011)Table of ContentsIntroduction xv F. BALESTRA PART 1. NOVEL MATERIALS FOR NANOSCALE CMOS 1 Chapter 1. Introduction to Part 1 3 D. LEADLEY, A. DOBBIE, V. SHAH and J. PARSONS 1.1. Nanoscale CMOS requirements 3 1.2. The gate stack – high-_ dielectrics 5 1.3. Strained channels 7 1.4. Source-drain contacts 16 1.5. Bibliography 17 Chapter 2. Gate Stacks 23 O. ENGSTRÖM, I. Z. MITROVIC, S. HALL, P. K. HURLEY, K. CHERKAOUI, S. MONAGHAN, H. D. B. GOTTLOB and M. C. LEMME 2.1. Gate-channel coupling in MOSFETs 23 2.2. Properties of dielectrics 24 2.3. Interfaces states and bulk oxide traps 29 2.4. Two ternary compounds: GdSiO and LaSiO 39 2.5. Metal gate technology 50 2.6. Future outlook 56 2.7. Bibliography 58 Chapter 3. Strained Si and Ge Channels 69 D. LEADLEY, A. DOBBIE, M. MYRONOV, V. SHAH and E. PARKER 3.1. Introduction 69 3.2. Relaxation of strained layers 74 3.3. High Ge composition Si1–xGex buffers 83 3.4. Ge channel devices 105 3.5. Acknowledgements 115 3.6. Bibliography 115 Chapter 4. From Thin Si/SiGe Buffers to SSOI 127 S. MANTL and D. BUCA 4.1. Introduction 128 4.2. Nucleation of dislocations 129 4.3. Strain relaxation and strain transfer mechanisms 131 4.4. Overgrowth of strained Si and layer optimization 134 4.5. Characterization of the elastic strain 137 4.6. SSOI wafer fabrication 141 4.7. SSOI as channel material for MOSFET devices 145 4.8. Summary 152 4.9. Bibliography 153 Chapter 5. Introduction to Schottky-Barrier MOS Architectures: Concept, Challenges, Material Engineering and Device Integration 157 E. DUBOIS, G. LARRIEU, R VALENTIN, N. BREIL and F. DANNEVILLE 5.1. Introduction 157 5.2. Challenges associated with the source/drain extrinsic contacts 158 5.3. Extraction of low Schottky barriers 166 5.4. Modulation of Schottky barrier height using low temperature dopant segregation 177 5.5. State-of-the-art device integration 191 5.6. Conclusion 195 5.7. Acknowledgements 197 5.8. Bibliography 197 PART 2. ADVANCED MODELING AND SIMULATION FOR NANO-MOSFETS AND BEYOND-CMOS DEVICES 205 Chapter 6. Introduction to Part 2 207 E. SANGIORGI 6.1. Modeling and simulation approaches for gate current computation 208 6.2. Modeling and simulation approaches for drain current computation 209 6.3. Modeling of end of the roadmap nMOSFET with alternative channel material 209 6.4. NEGF simulations of nanoscale CMOS in the effective mass approximation 210 6.5. Compact models for advanced CMOS devices 211 6.6. Beyond CMOS 211 6.7. Bibliography 212 Chapter 7. Modeling and Simulation Approaches for Gate Current Computation 213 B. MAJKUSIAK, P. PALESTRI, A. SCHENK, A. S. SPINELLI, C. M. COMPAGNONI and M. LUISIER 7.1. Introduction 213 7.2. Calculation of the tunneling probability 216 7.3. Tunneling in nonconventional devices 228 7.4. Trap-assisted tunneling 237 7.5. Models for gate current computation in commercial TCAD 243 7.6. Comparison between modeling approaches 249 7.7. Bibliography 251 Chapter 8. Modeling and Simulation Approaches for Drain Current Computation 259 M. VASICEK, D. ESSENI, C. FIEGNA and T. GRASSER 8.1. Boltzmann transport equation for MOS transistors 260 8.2. Method of moments 262 8.3. Subband macroscopic transport models 276 8.4. Comparison with device-SMC 278 8.5. Conclusions 282 8.6. Bibliography 283 Chapter 9. Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 287 Q. RAFHAY, R. CLERC, G. GHIBAUDO, P. PALESTRI and L. SELMI 9.1. Introduction: replacing silicon as channel material 287 9.2. State-of-the-art in the modeling of alternative channel material devices 290 9.3. Critical analysis of the literature using analytical models 297 9.4. Conclusions 327 9.5. Bibliography 328 Chapter 10. NEGF for 3D Device Simulation of Nanometric Inhomogenities 335 A. MARTINEZ, A. ASENOV and M. PALA 10.1. Introduction 335 10.2. Variabilities for nanoscale CMOS 343 10.3. Full quantum treatment of spatial fluctuations in ultra-scaled devices 361 10.4. Bibliography 377 Chapter 11. Compact Models for Advanced CMOS Devices 381 B. IÑIGUEZ, F. LIME, A. LÁZARO and T. A. FJELDLY 11.1. Introduction 381 11.2. Electrostatics modeling issues 385 11.3. Transport modeling issues 388 11.4. 1D compact models 390 11.5. Ultimate MuGFET modeling issues: ballistic current and quantum confinement 405 11.6. Velocity saturation and channel length modulation modeling 409 11.7. Hydrodynamic transport model 411 11.8. Charge and capacitance modeling 413 11.9. Short-channel effects 420 11.10. RF and noise modeling 434 11.11. Acknowledgements 437 11.12. Bibliography 438 Chapter 12. Beyond CMOS 443 G. IANNACCONE, G. FIORI, S. REGGIANI and M. PALA 12.1. Introduction 443 12.2. Atomistic modeling of carbon-based FETs 444 12.3. Numerical simulation of CNT-FETs 447 12.4. Effective mass modeling of carbon nanotube FETs 451 12.5. CNT versus graphene nanoribbon FETs 459 12.6. Full-quantum treatment of elastic and inelastic scattering in Si and SiC GAA nanowire FETs 461 12.7. Conclusions 467 12.8. Bibliography 468 PART 3. NANOCHARACTERIZATION METHODS 471 Chapter 13. Introduction to Part 3 473 D. FLANDRE Chapter 14. Accurate Determination of Transport Parameters in Sub-65 nm MOS Transistors 475 M. MOUIS and G. GHIBAUDO 14.1. Impact of transport on device performance in the drift-diffusion regime 476 14.2. Standard extraction techniques and their adaptation to short channel transistors 482 14.3. Alternative extraction techniques 518 14.4. Out of equilibrium transport 531 14.5. Conclusions 537 14.6. Bibliography 539 Chapter 15. Characterization of Interface Defects 545 P. HURLEY, O. ENGSTRÖM, D. BAUZA and G. GHIBAUDO 15.1. Characterization using the capacitance-voltage (C-V) response 545 15.2. Characterization using the conductance-voltage (G-V) response 550 15.3. Charge pumping 553 15.4. Low frequency noise 561 15.5. Bibliography 566 Chapter 16. Strain Determination 575 A. O’NEILL, S. OLSEN, P. DOBROSZ, R. AGAIBY and Y. TSANG 16.1. Introduction 575 16.2. Characterization requirements 575 16.3. Characterization techniques 579 16.4. Strain description 592 16.5. Bibliography 598 Chapter 17. Wide Frequency Band Characterization 603 D. FLANDRE, J.-P. RASKIN and V. KILCHYTSKA 17.1. Modified split-CV technique for reliable mobility extraction 604 17.2. Small-signal electrical characterization of FinFETs: impact of access resistances and capacitances 610 17.3. Substrate-related output conductance degradation 619 17.4. Small-signal electrical characterization of Schottky barrier MOSFETs 626 17.5. Bibliography 632 List of Authors 639 Index 649
£223.20
ISTE Ltd and John Wiley & Sons Inc Electrothermics
Book SynopsisThis book concerns the analysis and design of induction heating of poor electrical conduction materials. Some innovating applications such as inductive plasma installation or transformers, thermo inductive non-destructive testing and carbon-reinforced composite materials heating are studied. Analytical, semi-analytical and numerical models are combined to obtain the best modeling technique for each case. Each model has been tested with experimental results and validated. The principal aspects of a computational package to solve these kinds of coupled problems are described. In the first chapter, the mathematical tools for coupled electromagnetic and thermal phenomena are introduced. In Chapter 2, these tools are used to analyze a radio frequency inductive plasma installation. The third chapter describes the methodology of designing a low frequency plasma transformer. Chapter 4 studies the feasibility of the thermo inductive technique for non-destructive testing and the final chapter is dedicated to the use of induction heating in the lifecycle of carbon-reinforced composite materials. Contents 1. Thermal and Electromagnetic Coupling, Javad Fouladgar, Didier Trichet and Brahim Ramdane.2. Simplified Model of a Radiofrequency Inductive Thermal Plasma Installation, Javad Fouladgar and Jean-Pierre Ploteau.3. Design Methodology of A Very Low-Frequency Plasma Transformer, Javad Fouladgar and Souri Mohamed Mimoune.4. Non Destructive Testing by Thermo-Inductive Method, Javad Fouladgar, Brahim Ramdane, Didier Trichet and Tayeb Saidi.5. Induction Heating of Composite Materials, Javad Fouladgar, Didier Trichet, Samir Bensaid and Guillaume WasselynckTable of ContentsIntroduction xiii Javad FOULADGAR Chapter 1. Thermal and Electromagnetic Coupling 1 Javad FOULADGAR, Didier TRICHET and Brahim RAMDANE 1.1. Introduction 1 1.2. Electromagnetic problem 2 1.3. Thermal problem 15 1.4. Magnetothermal coupling 16 1.5. Solving the electromagnetic and thermal equations 18 1.6. Conclusion 35 1.7. Bibliography 36 Chapter 2. Simplified Model of a Radiofrequency Inductive Thermal Plasma Installation 39 Javad FOULADGAR and Jean-Pierre PLOTEAU 2.1. Introduction 39 2.2. Plasma and its characteristics 40 2.3. Modeling a plasma installation 49 2.4. Calculating charge impedance 57 2.5. Generator model 64 2.6. Conclusion 80 2.7. Bibliography 81 Chapter 3. Design Methodology of A Very Low-Frequency Plasma Transformer 85 Javad FOULADGAR and Souri Mohamed MIMOUNE 3.1. Introduction 85 3.2. Different types of very low-frequency applicators 87 3.3. Simplified analytical model for analysis and preliminary design 88 3.4. Nonlinear model 97 3.5. Plasma stability in the transitory and sinusoidal states 100 3.6. Advanced inductive plasma transformer model 103 3.7. Plasma initialization 111 3.8. Conclusion 114 3.9. Bibliography 114 Chapter 4. Non Destructive Testing by Thermo-Inductive Method 117 Javad FOULADGAR, Brahim RAMDANE, Didier TRICHET and Tayeb SAIDI 4.1. Introduction 117 4.2. Principles of the thermo-inductive method 119 4.3. Basic thermo-inductive technique theory 126 4.4. Application of the thermo-inductive method to inspect massive magnetic steel components 145 4.5. Comparison with infrared thermography 164 4.6. Applications on composite materials 168 4.7. Conclusion and general instructions 185 4.8. Bibliography 190 Chapter 5. Induction Heating of Composite Materials 195 Javad FOULADGAR, Didier TRICHET, Samir BENSAID and Guillaume WASSELYNCK 5.1. Introduction 195 5.2. Composite materials 197 5.3. Lifecycle of composite materials 202 5.4. Induction and the lifecycle of composite materials 203 5.5. Identifying the physical properties of composite materials by experimental methods 207 5.6. Homogenization techniques 224 5.7. Heating composite materials by induction 251 5.8. Setup model 253 5.9. Influence of the folds’ orientation 260 5.10. Difficulty of the electrothermal coupling 262 5.11. Validating the electrothermal model 262 5.12. Conclusion 267 5.13. Bibliography 268 List of Authors 273 Index 275
£135.80
ISTE Ltd and John Wiley & Sons Inc Ferroelectric Dielectrics Integrated on Silicon
Book SynopsisThis book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.Table of ContentsChapter 1. The Thermodynamic Approach 1 Emmanuel DEFAŸ 1.1. Background 1 1.2. The functions of state 2 1.3. Linear equations, piezoelectricity 6 1.4. Nonlinear equations, electrostriction 8 1.5. Thermodynamic modeling of the ferroelectric–paraelectric phase transition 9 1.6. Conclusion 24 1.7. Bibliography 25 Chapter 2. Stress Effect on Thin Films 27 Pierre-Eymeric JANOLIN 2.1. Introduction 27 2.2. Modeling the system under consideration 27 2.3. Temperature–misfit strain phase diagrams for monodomain films 28 2.4. Domain stability map 35 2.5. Temperature–misfit strain phase diagram for polydomain films 48 2.6. Discussion of the nature of the “misfit strain” 50 2.7. Conclusion 52 2.8. Experimental validation of phase diagrams: state of the art 52 2.9. Case study 53 2.10. Results 53 2.11. Comparison between the experimental data and the temperature–misfit strain phase diagrams 60 2.12. Conclusion 65 2.13. Bibliography 66 Chapter 3. Deposition and Patterning Technologies 71 Chrystel DEGUET, Gwenaël LE RHUN, Bertrand VILQUIN and Emmanuel DEFAŸ 3.1. Deposition method 71 3.2. Etching 86 3.3. Contamination 86 3.4. Monocrystalline thin-film transfer 87 3.5. Design of experiments 96 3.6. Conclusion 107 3.7. Bibliography 108 Chapter 4. Analysis Through X-ray Diffraction of Polycrystalline Thin Films 111 Patrice GERGAUD 4.1. Introduction 111 4.2. Some reminders of x-ray diffraction and crystallography 112 4.3. Application to powder or polycrystalline thin-films 122 4.4. Phase analysis by X-ray diffraction 126 4.5. Identification of coherent domain sizes of diffraction and micro-strains 132 4.6. Identification of crystallographic textures by X-ray diffraction 139 4.7. Determination of strains/stresses by X-ray diffraction 146 4.8. Bibliography 156 Chapter 5. Physicochemical and Electrical Characterization 159 Gwenaël LE RHUN, Brahim DKHIL and Pascale GEMEINER 5.1. Introduction 159 5.2. Useful characterization techniques 159 5.3. Ferroelectric measurement 170 5.4. Dielectric measurement 177 5.5. Bibliography 180 Chapter 6. Radio-Frequency Characterization 183 Thierry LACREVAZ 6.1. Introduction 183 6.2. Notions and basic concepts associated with HF 184 6.3. Frequency analysis: HF characterization of materials 204 6.4. Bibliography 211 Chapter 7. Leakage Currents in PZT Capacitors 213 Emilien BOUYSSOU 7.1. Introduction 213 7.2. Leakage current in metal/insulator/metal structures 215 7.3. Problem of leakage current measurement 225 7.4. Characterization of the relaxation current 233 7.5. Literature review of true leakage current in PZT 237 7.6. Dynamic characterization of true leakage current: I(t, T) 239 7.7. Static characterization of the true leakage current: I(V,T) 263 7.8. Conclusion 273 7.9. Bibliography 275 Chapter 8. Integrated Capacitors 281 Emmanuel DEFAŸ 8.1. Introduction 281 8.2. Potentiality of perovskites for RF devices: permittivity and losses 283 8.3. Bi-dielectric capacitors with high linearity 294 8.4. STO capacitors integrated on CMOS substrate by AIC technology 298 8.5. Bibliography 303 Chapter 9. Reliability of PZT Capacitors 305 Emilien BOUYSSOU 9.1. Introduction 305 9.2. Accelerated aging of metal/insulator/metal structures 307 9.3. Accelerated aging of PZT capacitors through CVS tests 316 9.4. Lifetime extrapolation of PZT capacitors 325 9.5. Conclusion 335 9.6. Bibliography 336 Chapter 10. Ferroelectric Tunable Capacitors 341 Benoit GUIGUES 10.1. Introduction 341 10.2. Overview of the tunable capacitors 342 10.3. Types of actual tunable capacitors 355 10.4. Toward new tunable capacitors 366 10.5. Bibliography 375 Chapter 11. FRAM Ferroelectric Memories: Basic Operations, Limitations, Innovations and Applications 379 Christophe MULLER 11.1. Taxonomy of non-volatile memories 379 11.2. FRAM memories: basic operations and limitations 383 11.3. Technologies available in 2011 387 11.4. Technological innovations 388 11.5. Some application areas of FRAM technology 394 11.6. Conclusion 396 11.7. Bibliography 397 Chapter 12. Integration of Multiferroic BiFeO3 Thin Films into Modern Microelectronics 403 Xiaohong ZHU 12.1. Introduction 403 12.2. Preparation methods 407 12.3. Ferroelectricity and magnetism 416 12.4. Device applications 427 12.5. Bibliography 436 List of Authors 443 Index 445
£180.45
ISTE Ltd and John Wiley & Sons Inc Safety Management for Software-based Equipment
Book SynopsisA review of the principles of the safety of software-based equipment, this book begins by presenting the definition principles of safety objectives. It then moves on to show how it is possible to define a safety architecture (including redundancy, diversification, error-detection techniques) on the basis of safety objectives and how to identify objectives related to software programs. From software objectives, the authors present the different safety techniques (fault detection, redundancy and quality control). “Certifiable system” aspects are taken into account throughout the book. Contents 1. Safety Management. 2. From System to Software. 3. Certifiable Systems. 4. Risk and Safety Levels. 5. Principles of Hardware Safety. 6. Principles of Software Safety. 7. Certification. About the Authors Jean-Louis Boulanger is currently an Independent Safety Assessor (ISA) in the railway domain focusing on software elements. He is a specialist in the software engineering domain (requirement engineering, semi-formal and formal method, proof and model-checking). He also works as an expert for the French notified body CERTIFER in the field of certification of safety critical railway applications based on software (ERTMS, SCADA, automatic subway, etc.). His research interests include requirements, software verification and validation, traceability and RAMS with a special focus on SAFETY.Table of ContentsINTRODUCTION ix CHAPTER 1. SAFETY MANAGEMENT 1 1.1. Introduction 1 1.2. Dependability 1 1.3. Conclusion 8 1.4. Bibliography 8 CHAPTER 2. FROM SYSTEM TO SOFTWARE 9 2.1. Introduction 9 2.2. Systems of command and control 10 2.3 System 13 2.4 Software implementation 14 2.5. Conclusion 16 2.6. Bibliography 17 2.7. Glossary 17 CHAPTER 3. CERTIFIABLE SYSTEMS 19 3.1. Introduction 19 3.2. Normative context 20 3.3. Conclusion 37 3.4. Bibliography 38 3.5. Glossary 41 CHAPTER 4. RISK AND SAFETY LEVELS 43 4.1. Introduction 43 4.2. Basic definitions 43 4.3. Safety implementation 48 4.4. In standards IEC 61508 and IEC 61511 70 4.5. Conclusions 74 4.6. Bibliography 74 4.7. Acronyms 77 CHAPTER 5. PRINCIPLES OF HARDWARE SAFETY 79 5.1. Introduction 79 5.2. Safe and/or available hardware 79 5.3. Reset of a processing unit 80 5.4. Presentation of safety control techniques 81 5.5. Conclusion 117 5.6. Bibliography 118 5.7. Glossary 119 CHAPTER 6. PRINCIPLES OF SOFTWARE SAFETY 121 6.1. Introduction 121 6.2. Techniques to make software application safe 121 6.3. Other forms of diversification 149 6.4. Overall summary 150 6.5. Quality management 150 6.6. Conclusion 155 6.7. Bibliography 156 6.8. Glossary 157 CHAPTER 7. CERTIFICATION 159 7.1. Introduction 159 7.2. Independent assessment 159 7.3. Certification 160 7.4. Certification in the rail sector 161 7.5. Automatic systems 171 7.6. Aircraft 171 7.7. Nuclear 171 7.8. Automotive 172 7.9. Spacecraft 172 7.10 Safety case 172 7.11 Conclusion 173 7.12 Bibliography 174 7.13 Glossary 176 CONCLUSION 177 INDEX 179
£132.00
ISTE Ltd and John Wiley & Sons Inc Software Architecture 1
Book SynopsisOver the past 20 years, software architectures have significantly contributed to the development of complex and distributed systems. Nowadays, it is recognized that one of the critical problems in the design and development of any complex software system is its architecture, i.e. the organization of its architectural elements. Software Architecture presents the software architecture paradigms based on objects, components, services and models, as well as the various architectural techniques and methods, the analysis of architectural qualities, models of representation of architectural templates and styles, their formalization, validation and testing and finally the engineering approach in which these consistent and autonomous elements can be tackled.Table of ContentsPreface ix Chapter 1. Object-Oriented, Component-Based, Agent-Oriented and Service-Oriented Paradigms in Software Architectures 1Abdelkrim AMIRAT, Anthony HOCK-KOON and Mourad Chabane OUSSALAH 1.1. Introduction 2 1.2. History 3 1.2.1. Object-oriented paradigm 3 1.2.2. Component-based paradigm 4 1.2.3. Agent-oriented paradigm 4 1.2.4. Service-oriented paradigm 5 1.3. Software architecture 8 1.3.1. Object-oriented software architecture 8 1.3.2. Component-based software architecture 10 1.3.3. Agent-oriented software architecture 11 1.3.4. Service-oriented architecture 13 1.4. The two dimensions of the conceptual framework for comparison: quantitative and qualitative 15 1.4.1. Conceptual differences 16 1.4.2. Quantitative dimension 25 1.4.3. Qualitative dimension 32 1.5. Approaches for integrating development paradigms 43 1.6. Summary and discussion 45 1.7. Conclusion 48 1.8. Bibliography 48 Chapter 2. Reference Architectures 55Elisa Yumi NAKAGAWA, Flavio OQUENDO and Jose Carlos MALDONADO 2.1. Introduction 55 2.2. Definition of reference architecture. 56 2.2.1. Reference architecture versus reference model 57 2.2.2. Reference architecture versus product line architecture 57 2.3. A model for reference architectures 59 2.4. Reference architecture engineering 63 2.4.1. Information source investigation 64 2.4.2. Architectural requirements establishment 66 2.4.3. Reference architecture design 67 2.4.4. Reference architecture evaluation 69 2.5. Uses of reference architectures 70 2.6. Examples of reference architectures 74 2.7. Future perspectives of reference architectures 75 2.8. Final remarks 78 2.9. Bibliography 78 Chapter 3. Multihierarchy/Multiview Software Architectures 83Ahmad KHEIR, Hala NAJA and Mourad Chabane OUSSALAH 3.1. Introduction 83 3.2. Existing viewpoint approaches 84 3.2.1. Introduction 84 3.2.2. Views in requirements specifications 85 3.2.3. Views in systems modeling 85 3.2.4. Views within programming 86 3.3. Views in software architecture 87 3.3.1. Contributions of the views in software architecture. 87 3.3.2. "4+1" view model 88 3.3.3. ISO/IEC/IEEE 42010 89 3.3.4. The views and beyond approach 91 3.3.5. Summary 93 3.3.6. Limitation of current approaches to software architecture 96 3.4. Definitions and basic concepts of multihierarchy/multiview software architectures 96 3.4.1. Definitions 96 3.4.2. Concepts and basics 98 3.5. MoVAL: architecture based on models, views and levels of abstraction 107 3.5.1. Introduction 107 3.5.2. MoVAL 108 3.5.3. MoVAL metamodel 112 3.5.4. Case study 114 3.6. Conclusion 117 3.7. Bibliography 118 Chapter 4. Software Architecture and Tools: Distributed and Coordinated Dynamic Reconfiguration Management 121Mohamed ZOUARI, Maria-Teresa SEGARRA and Khalil DRIRA 4.1. Introduction 122 4.2. Context 123 4.3. Dynamic reconfiguration management mechanisms of distributed applications. 125 4.3.1. Centralized dynamic reconfiguration management 126 4.3.2. Limitations of the centralized solution for distributed systems 129 4.3.3. The stakes of distributed reconfiguration management 130 4.3.4. Existing coordination mechanisms 131 4.4. Specialization of reconfiguration infrastructures 134 4.4.1. Specialization of behavior 134 4.4.2. Specialization of the distribution of adaptation mechanisms 135 4.5. Summary of the limitations and challenges of dynamic reconfiguration of distributed systems 137 4.6. An approach for the implementation of reconfiguration management mechanisms 138 4.7. Architectural model for distributed dynamic reconfiguration management 140 4.7.1. Component types for adaptation management 141 4.7.2. Distribution of dynamic reconfiguration management 142 4.7.3. Architectural model of the adaptation manager 144 4.7.4. Specialization of reconfiguration mechanisms 146 4.7.5. Coordination of reconfiguration processes 149 4.8. Conclusion 164 4.9. Bibliography 165 Chapter 5. Software Architecture for Product Lines 171Hugo ARBOLEDA, Rubby CASALLAS, Jaime CHAVARRIAGA and Jean-Claude ROYER 5.1. Introduction to software product lines 171 5.1.1. Three development styles 174 5.1.2. Variability management 175 5.1.3. The concept of architecture in product lines 177 5.2. The music store example 179 5.2.1. The field 179 5.2.2. The SongStock product line 180 5.2.3. Functional requirements 180 5.2.4. The other main requirements 181 5.3. Domain engineering 182 5.3.1. Domain analysis 182 5.3.2. Use case with integrated variability 183 5.3.3. The features model 184 5.3.4. Domain design 185 5.3.5. Designing the architecture of the line 186 5.4. Product engineering 190 5.4.1. The configuration of a product 191 5.4.2. Product derivation 193 5.5. The reference architecture design process 194 5.6. Further reading 197 5.6.1. PLA and reference architecture 198 5.6.2. Influential older works 200 5.7. Conclusion 203 5.8. Bibliography 204 Chapter 6. Software Architecture: Service Adaptation Techniques in the Context of Web Services Composition 211Kamel BARKAOUI and Maryam ESLAMICHALANDAR 6.1. Introduction. 211 6.2. Web service composition and verification 214 6.3. Web service incompatibility and adaptation 219 6.4. Adaptation approaches 222 6.5. Conclusion 234 6.6. Bibliography 234 List of Authors 241 Index 243
£125.06
ISTE Ltd and John Wiley & Sons Inc Beyond-CMOS Nanodevices 1
Book SynopsisThis book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.Table of ContentsACKNOWLEDGMENTS xiii GENERAL INTRODUCTION xv Francis BALESTRA PART 1. SILION NANOWIRE BIOCHEMICAL SENSORS 1 PART 1. INTRODUCTION 3 Per-Erik HELLSTRÖM and Mikael ÖSTLING CHAPTER 1. FABRICATION OF NANOWIRES 5 Jens BOLTEN, Per-Erik HELLSTRÖM, Mikael ÖSTLING, Céline TERNON and Pauline SERRE 1.1. Introduction 5 1.2. Silicon nanowire fabrication with electron beam lithography 6 1.2.1. Key requirements 6 1.2.2. Why electron beam lithography? 7 1.2.3. Lithographic requirements 8 1.2.4. Tools, resist materials and development processes 9 1.2.5. Exposure strategies and proximity effect correction 10 1.2.6. Technology limitations and how to circumvent them 11 1.3. Silicon nanowire fabrication with sidewall transfer lithography 14 1.4. Si nanonet fabrication 17 1.4.1. Si NWs fabrication 18 1.4.2. Si nanonet assembling 19 1.4.3. Si nanonet morphology and properties 19 1.5. Acknowledgments 21 1.6. Bibliography 21 CHAPTER 2. FUNCTIONALIZATION OF SI-BASED NW FETs FOR DNA DETECTION 25 Valérie STAMBOULI, Céline TERNON, Pauline SERRE and Louis FRADETAL 2.1. Introduction 25 2.2. Functionalization process 27 2.3. Functionalization of Si nanonets for DNA biosensing 28 2.3.1. Detection of DNA hybridization on the Si nanonet by fluorescence microscopy 31 2.3.2. Preliminary electrical characterizations of NW networks 33 2.4. Functionalization of SiC nanowire-based sensor for electrical DNA biosensing35 2.4.1. SiC nanowire-based sensor functionalization process 35 2.4.2. DNA electrical detection from SiC nanowire-based sensor 38 2.5. Acknowledgments 39 2.6. Bibliography 40 CHAPTER 3. SENSITIVITY OF SILICON NANOWIRE BIOCHEMICAL SENSORS 43 Pierpaolo PALESTRI, Mireille MOUIS, Aryan AFZALIAN, Luca SELMI, Federico PITTINO, Denis FLANDRE and Gérard GHIBAUDO 3.1. Introduction 43 3.1.1. Definitions 43 3.1.2. Main parameters affecting the sensitivity 47 3.2. Sensitivity and noise 47 3.3. Modeling the sensitivity of Si NW biosensors 50 3.3.1. Modeling the electrolyte 52 3.4. Sensitivity of random arrays of 1D nanostructures 54 3.4.1. Electrical characterization 55 3.4.2. Low-frequency noise characterization 56 3.4.3. Simulation of electron conduction in random networks of 1D nanostructures 56 3.4.4. Discussion 59 3.5. Conclusions 59 3.6. Acknowledgments 60 3.7. Bibliography 60 CHAPTER 4. INTEGRATION OF SILICON NANOWIRES WITH CMOS 65 Per-Erik HELLSTRÖM, Ganesh JAYAKUMAR and Mikael ÖSTLING 4.1. Introduction 65 4.2. Overview of CMOS process technology 66 4.3. Integration of silicon nanowire after BEOL 66 4.4. Integration of silicon nanowires in FEOL 67 4.5. Sensor architecture design 69 4.6. Conclusions 71 4.7. Bibliography 72 CHAPTER 5. PORTABLE, INTEGRATED LOCK-IN-AMPLIFIER-BASED SYSTEM FOR REAL-TIME IMPEDIMETRIC MEASUREMENTS ON NANOWIRES BIOSENSORS 73 Michele ROSSI and Marco TARTAGNI 5.1. Introduction 73 5.2. Portable stand-alone system 74 5.3. Integrated impedimetric interface 76 5.4. Impedimetric measurements on nanowire sensors 78 5.5. Bibliography 81 PART 2. NEW MATERIALS, DEVICES AND TECHNOLOGIES FOR ENERGY HARVESTING 83 PART 2. INTRODUCTION 85 Enrico SANGIORGI CHAPTER 6. VIBRATIONAL ENERGY HARVESTING 89 Luca LARCHER, Saibal ROY, Dhiman MALLICK, Pranay PODDER, Massimo DE VITTORIO, Teresa TODARO, Francesco GUIDO, Alessandro BERTACCHINI, Ronan HINCHET, Julien KERAUDY and Gustavo ARDILA 6.1. Introduction 89 6.2. Piezoelectric energy transducer 91 6.2.1. Introduction 91 6.2.2. State-of-the-art devices and materials 92 6.2.3. MEMS piezoelectric vibration energy harvesting transducers 95 6.2.4. RMEMS prototypes characterization and discussions of experimental results 102 6.2.5. Near field characterization techniques 104 6.2.6. Dedicated electro-mechanical models for piezoelectric transducer design 106 6.3. Electromagnetic energy transducers 109 6.3.1. Introduction 109 6.3.2. State-of-the-art devices and materials 109 6.3.3. Vibration energy harvester exploiting both the piezoelectric and electromagnetic effect 122 6.3.4. Device design 125 6.4. Bibliography 128 CHAPTER 7. THERMAL ENERGY HARVESTING 135 Mireille MOUIS, Emigdio CHÁVEZ-ÁNGEL, Clivia SOTOMAYOR-TORRES, Francesc ALZINA, Marius V. COSTACHE, Androula G. NASSIOPOULOU, Katerina VALALAKI, Emmanouel HOURDAKIS, Sergio O. VALENZUELA, Bernard VIALA, Dmitry ZAKHAROV, Andrey SHCHEPETOV and Jouni AHOPELTO 7.1. Introduction 135 7.1.1. Basics of thermoelectric conversion 136 7.1.2. Strategies to increase ZT 137 7.1.3. Heavy-metal-free TE generation 140 7.1.4. Alternatives to TE harvesting for self-powered solid-state microsystems 141 7.2. Thermal transport at nanoscale 142 7.2.1. Brief review of nanoscale thermal conductivity 143 7.2.2. The effect of phonon confinement 146 7.2.3. Fabrication of ultrathin free-standing silicon membranes 153 7.2.4. Advanced methods of characterizing phonon dispersion, lifetimes and thermal conductivity 156 7.3. Porous silicon for thermal insulation on silicon wafers 172 7.3.1. Introduction 172 7.3.2. Thermal conductivity of nanostructured porous Si 172 7.3.3. Thermal isolation using thick porous Si layers 176 7.3.4. Thermoelectric generator using porous Si thermal isolation 177 7.4. Spin dependent thermoelectric effects 185 7.4.1. Physical principle and interest for thermal energy harvesting 186 7.4.2. Demonstration of the magnon drag effect 188 7.5. Composites of thermal shape memory alloy and piezoelectric materials 192 7.5.1. Introduction 192 7.5.2. Physical principle and interest for thermal energy harvesting 193 7.5.3. Novelty and realizations 194 7.5.4. Theoretical considerations 195 7.5.5. Examples of use 196 7.5.6. Summary of composite harvesting by the combination of SMA and piezoelectric materials 204 7.6. Conclusions 204 7.7. Bibliography 205 CHAPTER 8. NANOWIRE BASED SOLAR CELLS 221 Mauro ZANUCCOLI, Anne KAMINSKI-CACHOPO, Jérôme MICHALLON, Vincent CONSONNI, Igar SEMENIKHIN, Mehdi DAANOUNE, Frédérique DUCROQUET, David KOHEN, Christine MORIN and Claudio FIEGNA 8.1 Introduction 221 8.2. Design of NW-based solar cells 223 8.2.1. Geometrical optimization of NW-based solar cells by numerical simulations 223 8.2.2. TCAD simulation of NW-based solar cells 230 8.3. Fabrication and opto-electrical characterization of NW-based solar cells 235 8.3.1. Elaboration of NW-based solar cells 235 8.3.2. Opto-electrical characterization of NW-based solar cells 236 8.4 Conclusion 243 8.5 Acknowledgments 243 8.6 Bibliography 243 CHAPTER 9. SMART ENERGY MANAGEMENT AND CONVERSION 249 Wensi WANG, James F. ROHAN, Ningning WANG, Mike HAYES, Aldo ROMANI, Enrico MACRELLI, Michele DINI, Matteo FILIPPI, Marco TARTAGNI and Denis FLANDRE 9.1. Introduction 249 9.2. Power management solutions for energy harvesting devices 251 9.2.1. Ultra-low voltage thermoelectric energy harvesting 251 9.2.2. Sub-1mW photovoltaic energy harvesting 256 9.2.3. Piezoelectric and micro-electromagnetic energy harvesting 260 9.2.4. DC/DC power management for future micro-generator 262 9.3. Sub-mW energy storage solutions 266 9.4. Conclusions 270 9.5. Bibliography 271 PART 3. ON-CHIP ELECTRONIC COOLING 277 CHAPTER 10. TUNNEL JUNCTION ELECTRONIC COOLERS 279 Martin PREST, James RICHARDSON-BULLOCK, Terry WHALL, Evan PARKER and David LEADLEY 10.1. Introduction and motivation 279 10.1.1. Existing cryogenic technology 280 10.2. Tunneling junctions as coolers 281 10.2.1. The NIS junction 281 10.2.2. Cooling power 284 10.2.3. Thermometry 286 10.2.4. The superconductor-insulator-normal metal-insulator-superconductor (SINIS) structure 287 10.2.5. Double junction superconductor-silicon-superconductor (SSmS) cooler 288 10.3. Limitations to cooling 289 10.3.1. States within the superconductor gap 290 10.3.2. Joule heating 291 10.3.3. Series resistance 291 10.3.4. Quasi-particle-related heating 293 10.3.5. Andreev reflection 295 10.4. Heavy fermion-based coolers 297 10.5. Summary 299 10.6. Bibliography 300 CHAPTER 11. SILICON-BASED COOLING ELEMENTS 303 David LEADLEY, Martin PREST, Jouni AHOPELTO, Tom BRIEN, David GUNNARSSON, Phil MAUSKOPF, Juha MUHONEN, Maksym MYRONOV, Hung NGUYEN, Evan PARKER, Mika PRUNNILA, James RICHARDSON-BULLOCK, Vishal SHAH, Terry WHALL and Qing-Tai ZHAO 11.1. Introduction to semiconductor-superconductor tunnel junction coolers 303 11.2. Silicon-based Schottky barrier junctions 304 11.3. Carrier-phonon coupling in strained silicon 308 11.3.1. Measurement of electron-phonon coupling constant 312 11.4. Strained silicon Schottky barrier mK coolers 315 11.5. Silicon mK coolers with an oxide barrier [GUN 13] 318 11.5.1. Reduction of sub-gap leakage 318 11.5.2. Effects of strain 319 11.6. The silicon cold electron bolometer 321 11.7. Integration of detector and electronics 324 11.8. Summary and future prospects 325 11.9. Acknowledgments 327 11.10 Bibliography 327 CHAPTER 12. THERMAL ISOLATION THROUGH NANOSTRUCTURING. 331 David LEADLEY, Vishal SHAH, Jouni AHOPELTO, Francesc ALZINA, Emigdio CHÁVEZ-ÁNGEL, Juha MUHONEN, Maksym MYRONOV, Androula G. NASSIOPOULOU, Hung NGUYEN, Evan PARKER, Jukka PEKOLA, Martin PREST, Mika PRUNNILA, Juan Sebastian REPARAZ, Andrey SHCHEPETOV, Clivia SOTOMAYOR-TORRES, Katerina VALALAKI and Terry WHALL 12.1. Introduction 331 12.2. Lattice cooling by physical nanostructuring 331 12.3. Porous Si membranes as cryogenic thermal isolation platforms 337 12.3.1. Porous Si micro-coldplates 337 12.3.2. Porous Si thermal conductivity 339 12.4. Crystalline membrane platforms 343 12.4.1. Strained germanium membranes 343 12.4.2. Thermal conductance measurements in Si and Ge membranes 350 12.4.3. Epitaxy-compatible thermal isolation platform 355 12.5. Summary of thermal conductance measurements 355 12.6. Acknowledgments. 358 12.7. Bibliography 358 PART 4. NEW MATERIALS, DEVICES AND TECHNOLOGIES FOR RF APPLICATIONS 365 PART 4. INTRODUCTION 367 Androula G. NASSIOPOULOU CHAPTER 13. SUBSTRATE TECHNOLOGIES FOR SILICON-INTEGRATED RF AND MM-WAVE PASSIVE DEVICES 373 Androula G. NASSIOPOULOU, Panagiotis SARAFIS, Jean-Pierre RASKIN, Hanza ISSA, Philippe FERRARI 13.1. Introduction 373 13.2. High-resistivity Si substrate for RF 374 13.2.1. Losses along coplanar waveguide transmission lines 375 13.2.2. Crosstalk 380 13.2.3. Nonlinearities along CPW lines 384 13.3. Porous Si substrate technology 385 13.3.1. General properties of porous Si 386 13.3.2. Dielectric properties of porous Si 389 13.3.3. Broadband electrical characterization of CPWT Lines on porous Si 393 13.3.4. Inductors on porous Si397 13.3.5. Antennas on porous Si399 13.4. Comparison between HR Si and local porous Si substrate technologies 400 13.4.1. Comparison of similar CPW TLines on different substrates 400 13.4.2. Comparison of inductors on different RF substrates 404 13.5. Design of slow-wave CPWs and filters on porous silicon 404 13.5.1. Slow-wave CPW TLines on porous Si 405 13.5.2. Simulation results for S-CPW TLines 406 13.5.3. Stepped impedance low-pass filter on porous silicon 408 13.5.4. Simulation results for filters 409 13.6. Conclusion 411 13.7. Acknowledgments 411 13.8. Bibliography 411 CHAPTER 14. METAL NANOLINES AND ANTENNAS FOR RF AND MM-WAVE APPLICATIONS 419 Philippe BENECH, Chuan-Lun HSU, Gustavo ARDILA, Panagiotis SARAFIS and Androula G. NASSIOPOULOU 14.1. Introduction 419 14.2. Metal nanowires (nanolines) 420 14.2.1. General properties 420 14.2.2. Transmission nanolines in microstrip configuration: characterization and modeling 426 14.2.3. Transmission nanolines in CPW configuration: fabrication, characterization and modeling 430 14.2.4. Characterization up to 200 GHz 440 14.3. Antennas 441 14.3.1. On-chip antennas: general 441 14.3.2. On-chip antenna characterization method 443 14.3.3. Measurement results 444 14.3.4. Discussion on antenna results 451 14.4. Conclusion 451 14.5. Acknowledgments 452 14.6. Bibliography 452 CHAPTER 15. NANOSTRUCTURED MAGNETIC MATERIALS FOR HIGH-FREQUENCY APPLICATIONS 457 Saibal ROY, Jeffrey GODSELL and Tuhin MAITY 15.1. Introduction 457 15.2. Power conversion and integration 457 15.3. Materials and integration 459 15.4. Controlling the magnetic properties 463 15.5. Magnetic properties of nanocomposite materials 467 15.6. Magnetic properties of nanomodulated continuous films 470 15.7. Conclusion 478 15.8. Bibliography 479 LIST OF AUTHORS 485 INDEX 493
£149.35
ISTE Ltd and John Wiley & Sons Inc Beyond-CMOS Nanodevices 2
Book SynopsisThis book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.Table of ContentsACKNOWLEDGMENTS ix GENERAL INTRODUCTION xi Francis BALESTRA INTRODUCTION TO VOLUME 2: SILICON NANOWIRE BIO-CHEMICAL SENSORS 1 Francis BALESTRA CHAPTER 1. SMALL SLOPE SWITCHES 5 Adrian M. IONESCU and Francis BALESTRA, Kathy BOUCART, Giovanni SALVATORE and Alexandru RUSU 1.1. Introduction 5 1.2. Tunnel FETs 6 1.3. Ferroelectric gate FET 14 1.4. Bibliography 21 CHAPTER 2. NANOWIRE DEVICES 25 Gérard GHIBAUDO, Sylvain BARRAUD, Mikaël CASSÉ, Xin Peng WANG, Guo Qiang LO, Dim-Lee KWONG, Marco PALA and Zheng FANG 2.1. Introduction 25 2.2. NW for logic CMOS devices 26 2.2.1. NW fabrication and technology 26 2.2.2. Quantum simulation of NWs 37 2.2.3. Electrical characterization of NWs 49 2.3. Nano-CMOS ultimate memories 66 2.3.1. Overview of memory 66 2.3.2. NW application in the evolutive solution path 67 2.3.3. NW technology along the disruptive solution path 73 2.4. Conclusions 81 2.5. Acknowledgments 82 2.6. Bibliography 82 CHAPTER 3. GRAPHENE AND 2D LAYER DEVICES FOR MORE MOORE AND MORE-THAN-MOORE APPLICATIONS 97 Max C. LEMME 3.1. Introduction 97 3.2. Graphene 98 3.2.1. Graphene fabrication 98 3.2.2. Macroscopic graphene field effect transistors 101 3.2.3. Graphene nanoribbon transistors 103 3.2.4. Bilayer graphene and substrate effects 105 3.2.5. RF transistors 106 3.2.6. Alternative graphene switches 107 3.3. 2D materials beyond graphene 108 3.4. Conclusions 109 3.5. Acknowledgments 110 3.6. Bibliography 110 CHAPTER 4. NANOELECTROMECHANICAL SWITCHES 117 Hervé FANET 4.1. Context 117 4.2. Nanorelay principles 118 4.2.1. The electrostatic actuation 119 4.2.2. The piezoelectrical actuation 120 4.2.3. The magnetic actuation 120 4.2.4. The thermal actuation 120 4.3. Electrostatic nanorelay modeling and optimization 121 4.3.1. Dynamic modeling 121 4.3.2. Quasi-static modeling 124 4.4. Technological challenges for NEMS computing 127 4.4.1. Low voltage operation 127 4.4.2. Reliability of contact technology 128 4.5. NEMS-based architectures 129 4.5.1. Conventional architectures 129 4.5.2. Adiabatic architectures 130 4.6. Conclusions 131 4.7. Bibliography 132 LIST OF AUTHORS 133 INDEX 135
£125.06
ISTE Ltd and John Wiley & Sons Inc Wide Band Gap Semiconductor Nanowires 2:
Book SynopsisThis book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.Table of ContentsPREFACE xi PART 1. GaN AND ZnO NANOWIRE HETEROSTRUCTURES 1 CHAPTER 1. AlGaN/GaN NANOWIRE HETEROSTRUCTURES 3 Jörg TEUBERT, Jordi ARBIOL and Martin EICKHOFF 1.1. A model system for AlGaN/GaN heterostructures 3 1.2. Axial AlGaN/GaN nanowire heterostructures 4 1.2.1. Structural properties of axial AlGaN/GaN nanowire heterostructures 5 1.2.2. Optical properties of axial AlGaN/GaN nanowire heterostructures 8 1.2.3. Lateral internal electric fields 12 1.2.4. Axial internal electric fields 14 1.2.5. Optical characterization of single-AlGaN/GaN nanowires containing GaN nanodisks 15 1.2.6. Electrical transport properties 18 1.3. AlGaN/GaN core–shell nanowire heterostructures 19 1.3.1. Structural properties 20 1.3.2. Optical characteristics 23 1.3.3. Electronic properties 24 1.3.4. True one-dimensional GaN quantum wire second-order self-assembly 28 1.4. Application examples 29 1.4.1. AlGaN/GaN nanowire heterostructure optochemical gas sensors 30 1.4.2. AlGaN/GaN nanowire heterostructure resonant tunneling diodes 33 1.5. Conclusions 34 1.6. Bibliography 35 CHAPTER 2. InGaN NANOWIRE HETEROSTRUCTURES 41 Bruno DAUDIN 2.1. Introduction 41 2.2. Self-assembled InGaN nanowires 43 2.3. X-ray characterization of InGaN nanowires 46 2.4. InGaN nanodisks and nanoislands in GaN nanowires 49 2.5. Selective area growth (SAG) of InGaN nanowires 52 2.6. Conclusion 55 2.7. Bibliography 56 CHAPTER 3. ZnO-BASED NANOWIRE HETEROSTRUCTURES 61 Guy FEUILLET and Pierre FERRET 3.1. Introduction 61 3.2. Designing ZnO-based nanowire heterostructures 63 3.3. Growth of ZnxMg1-xO/ZnO core–shell heterostructures by metal-organic vapor phase epitaxy 66 3.4. Misfit relaxation processes in Znx Mg1-xO/ZnO core–shell structures 70 3.5. Optical efficiency of core–shell oxidebased nanowire heterostructures 73 3.6. Axial nanowire heterostructures 76 3.7. Conclusions and perspectives 80 3.8. Bibliography 81 CHAPTER 4. ZnO AND Ga NANOWIRE-BASED TYPE II HETEROSTRUCTURES 85 Yong ZHANG 4.1. Semiconductor heterostructures 85 4.2. Type II heterostructures 87 4.3. Optimal device architecture 88 4.4. Electronic structure of type II core–shell nanowires 91 4.5. Synthesis of the type II core–shell nanowires and their signatures 94 4.6. Demonstration of type II effects in ZnO–ZnSe core–shell nanowires and photovoltaic devices 96 4.7. Summary 101 4.8. Acknowledgments 102 4.9. Bibliography 102 PART 2. INTEGRATION OF GaN AND ZnO NANOWIRES IN OPTOELECTRONIC DEVICES 105 CHAPTER 5. AXIAL GaN NANOWIRE-BASED LEDS 107 Qi WANG, Hieu N’GUYEN, Songrui ZHAO and Zetian MI 5.1. Introduction 107 5.2. Top-down GaN-based axial nanowire LEDs 108 5.2.1. Fabrication of top-down GaN-based axial nanowires 108 5.2.2. Device fabrication of axial nanowire LEDs 110 5.2.3. Performance characteristics of top-down axial nanowire LEDs 111 5.3. Bottom-up GaN-based axial nanowire LEDs 112 5.3.1. Growth techniques 112 5.3.2. Doping, polarity and surface charge properties 113 5.3.3. Design and typical performance of bottom-upaxial nanowire LEDs 114 5.4. Carrier loss processes of axial nanowire LEDs 121 5.4.1. Auger recombination 121 5.4.2. Electron overflow 122 5.4.3. Surface recombination 123 5.5. Controlling carrier loss of GaN-based nanowire LEDs 124 5.5.1. p-type modulation doping and AlGaN electron blocking layer 124 5.5.2. InGaN/GaN/AlGaN core–shell dot-in-a-wire phosphor-free white LEDs 126 5.6. Conclusions 127 5.7. Bibliography 127 CHAPTER 6. RADIAL GaN NANOWIRE-BASED LEDS 135 Shunfeng LI 6.1. Radial GaN nanowire-based LED: an emerging device 135 6.2. Growth of GaN nanowires and radial nanowire-based devices 138 6.3. Radial GaN nanowire-based LED structure 145 6.4. Characteristics of radial NW devices 150 6.5. Further work and perspectives 152 6.6. Bibliography 154 CHAPTER 7. GaN NANOWIRE-BASED LASERS 161 Xiang ZHOU, Jordan Paul CHESIN and Silvija GRADEÈAK 7.1. Introduction to nanowire lasers 161 7.2. Theoretical considerations and simulations 163 7.3. The first experimental observations of lasing in nanowires 165 7.4. GaN nanowire-based lasers 166 7.5. Toward wavelength tunability: nanowire lasers based on GaN/InxGa1-xN heterostructures 169 7.6. GaN nanowire lasers coupled with hybrid structures 171 7.7. Challenges and opportunities 173 7.8. Bibliography 175 CHAPTER 8. GaN NANOWIRE-BASED ULTRAVIOLET PHOTODETECTORS 179 Lorenzo RIGUTTI and Maria TCHERNYCHEVA 8.1. Introduction 179 8.2. Growth and fabrication techniques 180 8.3. GaN nanowire photoconductive detectors 183 8.4. p–i–n junction-based GaN nanowire detectors 187 8.5. Single-wire GaN/AlN multiple quantum disk photodetectors 190 8.6. Single-wire InGaN/GaN core–shell photodetectors 193 8.7. Conclusions 197 8.8. Acknowledgments 197 8.9. Bibliography 198 CHAPTER 9. ZnO NANOWIRE-BASED LEDS 203 Magnus WILLANDER and Omer NOUR 9.1. Outline 203 9.2. Introduction 203 9.3. Growth of ZnO nanowires 205 9.4. White light emission from ZnO nanowires 209 9.5. ZnO NW white LEDs on solid crystalline substrates 212 9.6. ZnO NWs white LEDs on flexible substrates 214 9.7. Enhancing the emission of ZnO nanowire-based LEDs 220 9.8. Conclusion and future prospective 222 9.9. Bibliography 222 CHAPTER 10. ZnO NANOWIRE-BASED SOLAR CELLS 227 Jason B. BAXTER 10.1. Introduction 227 10.1.1. Solar energy conversion and nanostructured solar cells 227 10.1.2. Use of ZnO in solar cells 228 10.2. ZnO nanowire dye-sensitized solar cells 229 10.3. Quantum dot-sensitized nanowire solar cells 235 10.4. Extremely thin absorber solar cells 237 10.5. Nanowire arrays completely filled with inorganic absorbers 239 10.6. ZnO nanorod – organic hybrid solar cells 241 10.7. ZnO nanowire arrays for photoelectrochemical water splitting 244 10.8. Conclusions 245 10.9. Acknowledgments 247 10.10. Bibliography 247 LIST OF AUTHORS 253
£125.06
