Electronic devices and materials Books
Taylor & Francis Inc Technology Computer Aided Design
Book SynopsisResponding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operationsTrade Review"A unique book combines both device and process simulation so far as I know. It combines principle and practice together and thus is quite suitable for use in classroom or as a self-study reference. It exposes the reader to the realm of device and process simulation, a field being critical important in VLSI but not easily being accessible to the reader due to the lack of comprehensive material available. … Yes, I would like to read this book. Even though I do not teach such a course directly, my yearly VLSI course indeed covers a chapter related to the VLSI manufacturing process and another to device modeling. This book definitely gives much more insight into these. It will give me a thorough understanding of these two important topics. … Because of its uniqueness, this book would be most likely to have a successful market. … A unique book combines both device and process simulation. It is an excellent resource for both the student and professional to these essential topics related to VLSI systems." ––Ming-Bo Lin, Department of Electronic Engineering of National Taiwan University of Science and Technology, Taipei, Taiwan"The materials provided bring up-to-date various aspects of TCAD simulation of VLSI MOSFETs, through providing an overview of TCAD software tools and the physical models included. It highlights the role and importance of TCAD tools in the development and prediction of VLSI MOS transistors’ design, characterization and fabrication. The materials comprise detailed examples with source codes of different types of MOSFETs using Silvaco TCAD device simulation tools, illustrating the key aspects of Silvaco TCAD tools and showing its capability and effectiveness to understand the physical behavior and potential of a device structure. In addition, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. This approach serves the purpose of the book which is to be tended for students of electrical and electronics engineering disciplines. The book is ideal for students and may also be used as a reference for researchers and professionals working in the area of electronic devices. … I am confident that the materials presented serve the purpose of this book quite well, and provide the target audience with a good reference on TCAD Simulation for VLSI MOSFET. … This book does an excellent job in providing the target audience with a comprehensive knowledge and the systematic approach for the design, characterization and fabrication of VLSI MOS transistors using TCAD tools. The book provides a practical and an easy way to gain an understanding of the fundamental physics and mathematics involved with TCAD tools. The book comprises detailed examples with source codes of different types of MOSFETs using TCAD device simulation tools so one can easily understand what is going on. Moreover, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. If you are using or going to use TCAD software for VLSI MOSFET devices design and analysis, this is the book for you.""––Dr. Mahmoud Al-Sa’di, Assistant Professor of Physics – Electronics, Berlin, Germany"The editor is correct in the assessment that any course related to TCAD simulation introducing the 'IC chain' commercial tools has to be through user manuals which is not very practical for class room teaching. Therefore, there seems to be a strong case for a text which can navigate students/researchers/professionals through various simulation phases systematically illustrating simulation principles, TCAD tool usages with judiciously selected case studies. 2. The authors involved are mostly known users of TCAD tools of Silvaco and are therefore competent to undertake the task."––Professor A. B. Bhattacharyya, Jaypee Institute of Information Technology, Noida, India"A unique book combines both device and process simulation so far as I know. It combines principle and practice together and thus is quite suitable for use in classroom or as a self-study reference. It exposes the reader to the realm of device and process simulation, a field being critical important in VLSI but not easily being accessible to the reader due to the lack of comprehensive material available. … Yes, I would like to read this book. Even though I do not teach such a course directly, my yearly VLSI course indeed covers a chapter related to the VLSI manufacturing process and another to device modeling. This book definitely gives much more insight into these. It will give me a thorough understanding of these two important topics. … Because of its uniqueness, this book would be most likely to have a successful market. … A unique book combines both device and process simulation. It is an excellent resource for both the student and professional to these essential topics related to VLSI systems." ––Ming-Bo Lin, Department of Electronic Engineering of National Taiwan University of Science and Technology, Taipei, Taiwan "The materials provided bring up-to-date various aspects of TCAD simulation of VLSI MOSFETs, through providing an overview of TCAD software tools and the physical models included. It highlights the role and importance of TCAD tools in the development and prediction of VLSI MOS transistors’ design, characterization and fabrication. The materials comprise detailed examples with source codes of different types of MOSFETs using Silvaco TCAD device simulation tools, illustrating the key aspects of Silvaco TCAD tools and showing its capability and effectiveness to understand the physical behavior and potential of a device structure. In addition, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. This approach serves the purpose of the book which is to be tended for students of electrical and electronics engineering disciplines. The book is ideal for students and may also be used as a reference for researchers and professionals working in the area of electronic devices. … I am confident that the materials presented serve the purpose of this book quite well, and provide the target audience with a good reference on TCAD Simulation for VLSI MOSFET. … This book does an excellent job in providing the target audience with a comprehensive knowledge and the systematic approach for the design, characterization and fabrication of VLSI MOS transistors using TCAD tools. The book provides a practical and an easy way to gain an understanding of the fundamental physics and mathematics involved with TCAD tools. The book comprises detailed examples with source codes of different types of MOSFETs using TCAD device simulation tools so one can easily understand what is going on. Moreover, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. If you are using or going to use TCAD software for VLSI MOSFET devices design and analysis, this is the book for you.""––Dr. Mahmoud Al-Sa’di, Assistant Professor of Physics – Electronics, Berlin, Germany "The editor is correct in the assessment that any course related to TCAD simulation introducing the 'IC chain' commercial tools has to be through user manuals which is not very practical for class room teaching. Therefore, there seems to be a strong case for a text which can navigate students/researchers/professionals through various simulation phases systematically illustrating simulation principles, TCAD tool usages with judiciously selected case studies. 2. The authors involved are mostly known users of TCAD tools of Silvaco and are therefore competent to undertake the task."––Professor A. B. Bhattacharyya, Jaypee Institute of Information Technology, Noida, IndiaTable of ContentsIntroduction to Technology CAD. Basic Semiconductor and MOS Physics. Review of Numerical Methods for TCAD. Device Simulation Using ISE-TCAD. Device Simulation Using Silvaco ATLAS Tool. Study of Deep Submicron VLSI MOSFETs through TCAD. MOSFET Characterization for VLSI Circuit Simulation. Process Simulation of a MOSFET using TSUPREM-4 and MEDICI.
£999.99
Taylor & Francis Inc NonImaging Microwave and MillimetreWave Sensors
Book SynopsisIn response to the ever-increasing global threat of terrorist attacks, the personal screening industry has been growing at a rapid rate. Many methods have been developed for detecting concealed weapons and explosives on the human body. In this important new book, the authors discuss their experiences over the last decade designing and testing microwave and millimetre wave detection and screening systems. It includes examples of actual devices that they have built and tested, along with test results that were obtained in realistic scenarios.The book focuses on the development of non-imaging detection systems, which are similar to radar. These systems do not form a conventional image of the scene and the person(s) being screened. Instead, the sensors detect and analyze the effect that the body, and any concealed objects, has on a transmitted waveform. These systems allow remote detection of both metallic and dielectric devices concealed on the human body in both indoor and outdTrade Review"... focuses on an aspect that is ... usually not a search area for remote sensing researchers, but is a field interesting to know. ... deals with a synthesis of research in the detection of metallic and dielectric objects (without electrical conduction)."—Jean-Marie Dubois, Professor Emeritus, University of Sherbrooke, Québec, Canada, from Bulletin d'AQTTable of ContentsIntroduction. RCS Concept and Basic Definitions. Active Millimetre Wave Sensor using Direct Detection Approach. FMCW Sensors for Detecting Hidden Objects. Active Microwave Sensors for Complex Natural Resonance-Based Object Detection. Passive Millimetre Wave Sensors. Role of Shielding Effects in Operating Non-Imaging Sensors.
£185.25
Taylor & Francis Inc Physics and Applications of Dilute Nitrides
Book SynopsisSince their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at the basic electronic and optical properties of diluted nitrides.The aim of Physics and Applications of Diluted Nitrides is to provide graduate students, researchers and engineers with a comprehensive overview of the present knowledge and future perspectives of diluted nitrides.Co-authored by a group of leading scientists in the field, this book brings the reader up to speed on the development and current state of diluted nitride applications, as well as the technologies to be developed in the near future.Table of ContentsPhysics and Applications of Dilute Nitrides
£237.50
Springer International Publishing AG Semiconductors for Optoelectronics: Basics and Applications
Book SynopsisThis book provides in-depth knowledge about the fundamental physical properties of bulk and low dimensional semiconductors (LDS). It also explains their applications to optoelectronic devices. The book incorporates two major themes. The first theme, starts from the fundamental principles governing the classification of solids according to their electronic properties and leads to a detailed analysis of electronic band structure and electronic transport in solids. It then focuses on the electronic transport and optical properties of semiconductor compounds, size quantization and the analysis of abrupt p-n junctions where a full analysis of the fundamental properties of intrinsic and doped semiconductors is given. The second theme is device-oriented. It aims to provide the reader with understanding of the design, fabrication and operation of optoelectronic devices based on novel semiconductor materials, such as high-speed photo detectors, light emitting diodes, multi-mode and single-mode lasers and high efficiency solar cells. The book appeals to researchers and high-level undergraduate students.Table of Contents Metals, Semiconductors and Insulators.- Electrical Conduction , Charge Carriers, Concept of Mobility.- Electronic Band Structure of Solids.- Intrinsic and Doped Semiconductors.- Conductivity in Semiconductors.- Semiconductor p-n Junctions -Solar Cells.- Photo Detectors.- Light-Emitting Diodes and Semiconductor Lasers.
£64.59
Carl Hanser Verlag GmbH & Co Automotive High Speed Communication Technologies:
Book SynopsisThe demands for processing power, software, and communication are continuously increasing; in all industries and also in the automotive one. In vehicles, the need for higher data rates is driven by more electronic functions in general, but especially by ever more potent (camera) sensors, displays, and high performance ECUs.This book provides a holistic view on new SerDes and Ethernet high-speed communication solutions for cars. It addresses core physical components such as cables, connectors, or PCB design, as well as physical layer processing, use-case-specific protocols, and the use cases as such. It is important to the authors not only to explain the technologies, but also to provide context and background in respect to various technical choices. The intent is to help readers understand the current eco-system end-to-end, whether they are new to the automotive industry or experts who want to deepen their understanding on specific items, whether they are working for a car manufacturer directly or any of the suppliers, whether they are already involved or evaluating to get involved.This is the first book to address the following topics: the >10 Gbps Automotive Ethernet technologies IEEE 802.3cy and IEEE 802.3cz asymmetric Ethernet the new automotive SerDes Standard, the ASA Motion Link the MIPI Automotive SerDes Solutions ( MASS ) power supply over coaxial data cables design for testability in an automotive context
£78.20
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Semiconductors: Data Handbook
Book SynopsisThis Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials.Table of ContentsDetailed table of contents.- Tetrahedrally bonded elements and compounds.- 1 Elements of the IVth group and compounds.- 1.0 Crystal structure and electronic structure.- 1.1 Diamond (C).- 1.2 Silicon (Si).- 1.3 Germanium (Ge).- 1.4 Grey tin (?-Sn).- 1.5 Silicon carbide (SiC).- 1.6 Silicon germanium mixed crystals (SixGe1-x.- 2 III-V compound.- 2.0 Crystal structure and electronic structure.- 2.1 Boron nitride (BN).- 2.2 Boron phosphide (BP).- 2.3 Boron arsenide (BAs).- 2.4 Boron antimonide (BSb).- 2.5 Aluminum nitride (AlN).- 2.6 Aluminum phosphide (AlP).- 2.7 Aluminum arsenide (AlAs).- 2.8 Aluminum antimonide (AlSb).- 2.9 Gallium nitride (GaN).- 2.10 Gallium phosphide (GaP).- 2.11 Gallium arsenide (GaAs).- 2.12 Gallium antimonide (GaSb).- 2.13 Indium nitride (InN).- 2.14 Indium phosphide (InP).- 2.15 Indium arsenide (InAs).- 2.16 Indium antimonide (InSb).- 2.17 Ternary alloys lattice matched to binary III-V compounds.- 2.18 Quaternary alloys lattice matched to binary III-V compounds.- 3 II-VI compound.- 3.0 Crystal structure and electronic structure.- 3.1 Beryllium oxide (BeO.- 3.2 Beryllium sulfide (BeS.- 3.3 Beryllium selenide (BeSe.- 3.4 Beryllium telluride (BeTe).- 3.5 Magnesium oxide (MgO).- 3.6 Magnesium sulfide (MgS).- 3.7 Magnesium selenide (MgSe).- 3.8 Magnesium telluride (MgTe).- 3.9 Calcium oxide (CaO).- 3.10 Strontium oxide (SrO).- 3.11 Barium oxide (BaO).- 3.12 Zinc oxide (ZnO).- 3.13 Zinc sulfide (ZnS).- 3.14 Zinc selenide (ZnSe).- 3.15 Zinc telluride (ZnTe).- 3.16 Cadmium oxide (CdO).- 3.17 Cadmium sulfide (CdS).- 3.18 Cadmium selenide (CdSe).- 3.19 Cadmium telluride (CdTe).- 3.20 Mercury oxide (HgO).- 3.21 Mercury sulfide (HgS).- 3.22 Mercury selenide (HgSe).- 3.23 Mercury telluride (HgTe).- 4 I-VII compound.- 4.0 Crystal structure and electronic structure.- 4.1 Cuprous fluoride (CuF).- 4.2 Cuprous chloride (?-CuCl).- 4.3 Cuprous bromide (?-CuBr).- 4.4 Cuprous iodide (?-CuI).- 4.5 Silver fluoride (AgF).- 4.6 Silver chloride (AgCl).- 4.7 Silver bromide (AgBr).- 4.8 Silver iodide (AgI).- 5 III2-VI3 compound.- 5.0 Crystal structure of quasi-binary II2-VI3 compounds.- 5.1 Gallium sulfide (Ga2S3).- 5.2 Gallium selenide (Ga2Se3).- 5.3 Gallium telluride (Ga2Te3).- 5.4 Indium sulfide (In2S3).- 5.5 Indium selenide (In2Se3).- 5.6 Indium telluride (In2Te3).- 6 I-III-VI2 compound (included are I-Fe-VI2 compounds).- 6.0 Crystal structure and electronic structure.- 6.1 Copper aluminum sulfide (CuAlS2).- 6.2 Copper aluminum selenide (CuAlSe2).- 6.3 Copper aluminum telluride (CuAlTe2).- 6.4 Copper gallium sulfide (CuGaS2).- 6.5 Copper gallium selenide (CuGaSe2).- 6.6 Copper gallium telluride (CuGaTe2).- 6.7 Copper indium sulfide (CuInS2).- 6.8 Copper indium selenide (CuInSe2).- 6.9 Copper indium telluride (CuInTe2).- 6.10 Silver gallium sulfide (AgGaS2).- 6.11 Silver gallium selenide (AgGaSe2).- 6.12 Silver gallium telluride (AgGaTe2).- 6.13 Silver indium sulfide (AgInS2).- 6.14 Silver indium selenide (AgInSe2).- 6.15 Silver indium telluride (AgInTe2).- 6.16 Copper thallium sulfide (CuTlS2).- 6.17 Copper thallium selenide (CuTlSe2).- 6.18 Copper thallium telluride (CuTlT2).- 6.19 Silver thallium selenide (AgTlSe2).- 6.20 Silver thallium telluride (AgTlTe2).- 6.21 Copper iron sulfide (CuFeS2).- 6.22 Copper iron selenide (CuFeSe2).- 6.23 Copper iron telluride (CuFeTe2).- 6.24 Silver iron selenide (AgFeSe2).- 6.25 Silver iron telluride (AgFeTe2).- 7 II-IV-V2 compound.- 7.0 Crystal structure and electronic structure.- 7.1 Magnesium silicon phosphide (MgSiP2).- 7.2 Zinc silicon phosphide (ZnSiP2).- 7.3 Zinc silicon arsenide(ZnSiAs2).- 7.4 Zinc germanium nitride (ZnGeN2).- 7.5 Zinc germanium phosphide (ZnGeP2).- 7.6 Zinc germanium arsenide (ZnGeAs2).- 7.7 Zinc tin phosphide (ZnSnP2).- 7.8 Zinc tin arsenide (ZnSnAs2).- 7.9 Zinc tin antimonide (ZnSnSb2).- 7.10 Cadmium silicon phosphide (CdSiP2).- 7.11 Cadmium silicon arsenide (CdSiAs2).- 7.12 Cadmium germanium phosphide (CdGeP2).- 7.13 Cadmium germanium arsenide (CdGeAs2).- 7.14 Cadmium tin phosphide (CdSnP2).- 7.15 Cadmium tin arsenide (CdSnAs2).- 8 I2-IV-VI3 compound.- 8.1 Copper germanium sulfide (Cu2GeS3).- 8.2 Copper germanium selenide (Cu2GeSe3).- 8.3 Copper germanium tellurid (Cu2GeSe3).- 8.4 Copper tin sulfide (Cu2SnS3).- 8.5 Copper tin selenide (Cu2SnSe3).- 8.6 Copper tin telluride (Cu2SnTe3).- 8.7 Silver germanium selenide (Ag2GeSe3).- 8.8 Silver germanium telluride (Ag2GeTe3).- 8.9 Silver tin sulfide (Ag2SnS3).- 8.10 Silver tin selenide (Ag2SnSe3).- 8.11 Silver tin telluride (Ag2SnTe3).- 9 I3-V-VI4 compound.- 9.0 Crystal structure.- 9.1 Copper thiophosphate (Cu3PS4).- 9.2 Copper thioarsenide, enargite, luzonite (Cu3AsS4).- 9.3 Copper arsenic selenide (Cu3AsSe4).- 9.4 Copper antimony sulfide, famatinite (Cu3SbS4).- 9.5 Copper antimony selenide (Cu3SbSe4).- 9.6 Copper arsenic telluride (Cu3AsTe.- 9.7 Copper antimony telluride (Cu3SbTe.- 10 II-III2-VI4 compound.- 10.0 Crystal structure and electronic structure.- 10.1 Zinc aluminum sulfide (ZnAl2S4).- 10.2 Zinc gallium sulfide (ZnGa2S4).- 10.3 Zinc gallium selenide (ZnGa2Se4).- 10.4 Zinc thioindate (ZnIn2S4).- 10.5 Zinc indium selenide (ZnIn2Se4).- 10.6 Zinc indium telluride (?n?n2?e4).- 10.7 Cadmium thioaluminate (CdAl2S4).- 10.8 Cadmium thiogallate (CdGa2S4).- 10.9 Cadmium gallium selenide (CdGa2Se4).- 10.10 Cadmium gallium telluride (CdGa2Te4).- 10.11 Cadmium thioindate (CdIn2S4).- 10.12 Cadmium indium selenide (CdIn2Se4).- 10.13 Cadmium indium telluride (CdIn2Te4).- 10.14 Cadmium thallium selenide (CdTl2Se4).- 10.15 Mercury thiogallate (HgGa2S4).- 10.16 Mercury gallium selenide (HgGa2Se4).- 10.17 Mercury indium telluride (HgIn2Te4).- 10.18 HgIn2Se4,Hg3In2Te6,Hg5In2Te.- 10.19 Further II-III2-VI4 compounds with II = Mg, Ca.- Further elements.- 11 Group III element.- 11.0 Crystal structure and electronic structure of boron.- 11.1 Physical properties of boron.- 12 Group V element.- 12.0 Crystal structure and electronic structure.- 12.1 Phosphorus (P).- 12.2 Arsenic (As).- 12.3 Antimony (Sb).- 12.4 Bismuth (Bi).- 13 Group VI element.- 13.0 Crystal structure and electronic structure.- 13.1 Sulfur (S).- 13.2 Selenium (Se).- 13.3 Tellurium (Te).- Further binary compounds.- 14 IAx-IBy compound.- 14.0 Crystal structure and electronic structure.- 14.1 CsAu.- 14.2 RbAu.- 15 Ix-Vy compound.- 15.0 Crystal structure and electronic structure.- 15.1 I-V compounds (NaSb, KSb, RbSb, CsSb).- 15.2 I3-V compounds.- 15.2.1 Lattice parameters and meltin temperatures.- 15.2.2 Li3Sb, Li3Bi.- 15.2.3 Na3Sb.- 15.2.4 K3Sb.- 15.2.5 Rb3Sb.- 15.2.6 Cs3Sb.- 15.2.7 Rb3Bi, Cs3Bi.- 15.3.- 15.3.1 Na2KSb.- 15.3.2 K2CsSb.- 15.3.3 Na2RbSb, Na2CsSb, K2RbSb, Rb2CsSb.- 16 Ix-VIy compound.- 16.0 Crystal structure and electronic structure.- 16.1 Cupric oxide (CuO).- 16.2 Cuprous oxide (Cu20).- 16.3 Copper sulfides (Cu2S, Cu2-xS).- 16.4 Copper selenides (Cu2Se, Cu2-xSe).- 16.5 Copper tellurides (Cu2Te, Cu2-xTe).- 16.6 Silver oxides (AgxOy).- 16.7 Silver sulfide (Ag2S).- 16.8 Silver selenide (Ag2Se).- 16.9 Silver telluride (Ag2Te).- 17 IIx-IVy compound.- 17.0 Crystal structure and electronic structure.- 17.1 Magnesium suicide (Mg2Si).- 17.2 Magnesium germanide (Mg2Ge).- 17.3 Magnesium stannide (Mg2Sn).- 17.4 Magnesium plumbide (Mg2Pb).- 17.5 Ca2Si, Ca2Sn, Ca2Pb.- 17.6 BaSi2, BaGe2, SrGe.- 18 Hx-Vy compound.- 18.0 Crystal structure and electronic structure.- 18.1 Magnesium arsenide (Mg3As2).- 18.2 Zinc phosphide (Zn3P2).- 18.3 Zinc arsenide (Zn3As2).- 18.4 Cadmium phosphide (Cd3P2).- 18.5 Cadmium arsenide (Cd3As2).- 18.6 Zinc phosphide (ZnP2).- 18.7 Zinc arsenide (ZnAs2).- 18.8 Cadmium phosphide (CdP2).- 18.9 Cadmium arsenide (CdAs2).- 18.10 Cadmium tetraphosphide (CdP4).- 18.11 Zinc antimonide (ZnSb).- 18.12 Cadmium antimonide (CdSb).- 18.13 Zinc antimonide (Zn4Sb3).- 18.14 Cadmium antimonide (Cd4Sb3).- 18.15 Cd.- 18.16 Cd.- 19 II-VII2 compound.- 19.0 Crystal structure and electronic structure.- 19.1 Cadmium dichloride (CdCl2).- 19.2 Cadmium dibromide (CdBr2).- 19.3 Cadmium diiodide (CdI2).- 19.4 Mercury diiodide (HgI2).- 20 IIIx-VIy compound.- 20.0 Crystal structure and electronic structure.- 20.1 Gallium sulfide (GaS).- 20.2 Gallium selenide (GaSe).- 20.3 Gallium telluride (GaTe).- 20.4 Indium sulfide (InS).- 20.5 Indium selenide (InSe).- 20.6 Indium telluride (InTe).- 20.7 Thallium sulfide (TlS).- 20.8 Thallium selenide (TlSe).- 20.9 Thallium telluride (TlTe).- 20.10 In6S7.- 20.11 In4Se3.- 20.12 In6Se7.- 20.13 In60Se40.- 20.14 In50Se50.- 20.15 In40Se60.- 20.16 In5Se6.- 20.17 In4Te3.- 20.18 Tl5Te3.- 20.19 TlGa2.- 20.20 TlGaSe2.- 20.21 TlGaTe2.- 20.22 TlIn2.- 20.23 TlInSe2.- 20.24 TlInTe2.- 21 III-VII compound.- 21.0 Crystal structure and electronic structure.- 21.1 Thallium fluoride (TlF).- 21.2 Thallium chloride (T1C1).- 21.3 Thallium bromide (TlBr).- 21.4 Thallium iodide (TlI).- 22 IV-V compound.- 22.0 Crystal structure and lattice parameters.- 22.1 SiP, Ge.- 22.2 SiAs.- 22.3 GeAs.- 22.4 SiP2, SiAs2.- 22.5 GeAs2.- 23 IVx-VIy compound.- 23.0 Crystal structure and electronic structure.- 23.1 Germanium sulfide (GeS).- 23.2 Germanium selenide (GeSe).- 23.3 Germanium telluride (GeTe).- 23.4 Tin sulfide (SnS).- 23.5 Tin selenide (SnSe).- 23.6 Tin telluride (SnTe).- 23.7 Lead monoxide (PbO).- 23.8 Lead sulfide (PbS).- 23.9 Lead selenide (PbSe).- 23.10 Lead telluride (PbTe).- 23.11 Germanium dioxide (GeO2).- 23.12 Germanium disulfide (GeS2).- 23.13 Germanium diselenide (GeSe2).- 23.14 Tin dioxide (SnO2).- 23.15 Tin disulfide (SnS2).- 23.16 Tin diselenide (SnSe2).- 23.17 Si2Te3.- 23.18 Sn2S3, PbSnS3, SnGeS3, PbGe3.- 24 IV-VII2 Compound.- 24.0 Crystal structure.- 24.1 Lead difluoride (PbF2).- 24.2 Lead dichloride (PbCl2).- 24.3 Lead dibromide (PbBr2).- 24.4 Lead diiodide (Pbl2).- 25 Vx-VIy Compound.- 25.0 Crystal structure and electronic structure.- 25.1 Arsenic oxide (As2O3).- 25.2 Arsenic sulfide (As2S3).- 25.3 Arsenic selenide (As2Se3).- 25.4 Arsenic telluride (As2Te3).- 25.5 Antimony sulfide (Sb2S3).- 25.6 Antimony selenide (Sb2Se3).- 25.7 Antimony telluride (Sb2Te3).- 25.8 Bismuth oxide (Bi2O3).- 25.9 Bismuth sulfide (Bi2S3).- 25.10 Bismuth selenide (Bi2Se3).- 25.11 Bismuth telluride (Bi2Te3).- 25.12 Realgar (As4S4).- 26 V-VII3 compound.- 26.0 Crystal structure and electronic structure.- 26.1 Arsenic triiodide (AsI3).- 26.2 Antimony triiodide (SbI3).- 26.3 Bismuth triiodide (BiI3).- Further ternary compounds.- 27 Ix-IVy-VIz compound.- 27.0 Crystal structure.- 27.1 Ag8GeS6 (argyrodite).- 27.2 Ag8SnS6 (canfieldite).- 27.3 Ag8SiSe6.- 27.4 Ag8GeSe6.- 27.5 Ag8SnSe6.- 27.6 Ag8GeTe6.- 27.7 Cu8Ge6.- 27.8 Cu8GeSe6.- 27.9 Cu4Ge3S5, Cu4Ge3Se5 and Cu4Sn3Se6.- 27.10 Cu4Sn4.- 28 Ix-Vy-VIz compound.- 28.0 Crystal structure and electronic structure.- 28.1 AgAs2.- 28.2 AgAsSe2.- 28.3 AgAsTe2.- 28.4 AgSb2.- 28.5 AgSbSe2.- 28.6 AgSbTe2.- 28.7 AgBi2.- 28.8 AgBiSe2.- 28.9 AgBiTe2.- 28.10 CuSbSe2.- 28.11 CuSbTe2.- 28.12 CuBiSe2.- 28.13 CuBiTe2.- 28.14 Ag3As3.- 28.15 Ag3Sb3.- 29 IIx-IIIy-VIz compound.- 29.0 Crystal structure of II-III-VI2 compounds.- 29.1 CdIn2.- 29.2 CdInSe2.- 29.3 CdInTe2.- 29.4 CdTl2.- 29.5 CdTlSe2.- 29.6 CdTlTe2.- 29.7 HgTl2.- 30 IIIx-Vy-VIz compound.- 30.0 Crystal structure of III-V-VI2 compounds.- 30.1 TlAs2.- 30.2 TlSb2.- 30.3 TlBi2.- 30.4 TlBiSe2.- 30.5 TlBiTe2.- 30.6 Ga6Sb5Te2.- 30.7 In6Sb5Te2.- 30.8 In7SbTe2.- 31 IVx-Vy-VIz compound.- 31.0 Crystal structure.- 31.1 Bi12Si20.- 31.2 Bi12Ge20.- 31.3 PbSb2S4, GeSb2Te4, GeBi2Te4,SnBi2Te4.- 31.4 GeBi4Te7, GeSb4Te7, PbBi4Te7.- 32 V-VI-VII compound.- 32.0 Crystal structure and electronic structure.- 32.1 AsSBr.- 32.2 Sb.- 32.3 SbSBr.- 32.4 SbSeBr.- 32.5 SbSe.- 32.6 SbTe.- 32.7 Bi.- 32.8 BiOBr.- 32.9 Bi.- 32.10 BiSCl.- 32.11 BiSBr.- 32.12 Bi.- 32.13 BiSeBr.- 32.14 BiSe.- 32.15 BiTeBr.- 32.16 BiTel.- 33 Further ternary compound.- 33.1 Cu3In5Se9.- 33.2 Cu3Ga5Se9.- 33.3 Ag3In5Se9.- 33.4 Ag3Ga5Se9.- 33.5 Cu2Ga4Te7.- 33.6 Cu2In4Te7.- 33.7 CuIn3Te5.- 33.8 AgIn3Te5.- 33.9 AgIn5S8.- 33.10 AgIn9Te14.- 33.11 Cd2Sn4.- 33.12 CdSn3.- 33.13 Li3Cu3.- 33.14 Hg3PS3, Hg3Ps4.- 33.15 Cd4(PAs)2(Cl,Br,I).- 34 Boron compound.- 34.1 Boron-hydrogen alloys.- 34.2 Binary boron-lithium compounds.- 34.3 Ternary boron-lithium compounds.- 34.4 Boron-sodium compounds.- 34.5 Boron-potassium compounds.- 34.6 Beryllium-aluminum-boron compounds.- 34.7 Boron-aluminum-magnesium compounds.- 34.8 Boron-alkaline earth compound.- 34.9 Aluminum-boron compounds.- 34.10 Boron-yttrium compounds.- 34.11 Lanthanide hexaborides.- 34.14 Boron compounds with group IV elements: boron carbide.- 34.15 Boron-silicon compounds.- 34.16 Boron-zirconium compounds.- 34.17 Boron-nitrogen compounds.- 34.18 Boron-phosphorus compounds.- 34.19 Boron-arsenic compounds.- 35 Binary transition metal compound.- 35.1.- 35.2.- 35.3.- 36 Binary rare earth compound.- 37 Ternary transition metal compound.- 37.1.- 37.2.- 37.3.- 38 Ternary rare earth compound.
£224.99
Birkhauser Licht. Sehen. Gestalten.: Lichttechnische und
Book SynopsisEine effiziente, ökonomische und ökologische Lichtgestaltung ist integraler Bestandteil eines gelungenen Neubaus sowie der Altbausanierung. Praktiker, die sich für Lichttechnik und Wahrnehmungspsychologie interessieren, mussten bisher in beiden Spezialgebieten recherchieren. Mit „Licht.Sehen.Gestalten“ verbindet der Autor beide Themenbereiche in einem Buch. Dr. Walter Witting, jahrelanger Mitarbeiter von Professor Bartenbach, sammelte über Jahrzehnte Erfahrung auf beiden Gebieten. Das Know-how von Bartenbach bietet eine innovative und praxistaugliche Lösungskompetenz, die Eingang in dieses Handbuch findet: Es bietet Grundlagenwissen für Architekten, Lichtplaner, Designer sowie für verwandte Berufe wie Set-Designer, Verkehrsplaner, Mediziner und Psychologen und wendet sich gleichermaßen an Studierende derartiger Fachrichtungen. Die vorliegende Auflage wurde von Walter Witting komplett überarbeitet, korrigiert und durch weitere Illustrationen ergänzt. Neu hinzugekommen ist das Kapitel über „Das Phänomen Farbe“. Die Neuauflage dieses Referenzwerkes der Lichtliteratur bietet somit noch mehr lichttechnisches und wahrnehmungspsychologisches Wissen über den Umgang mit dem immateriellen Baustoff Licht.Trade Review"Unverzichtbar." Michael Krassnitzer in: Konstruktiv 298/2015 "Bibel über Licht." luxolumina, 11/2015 "Licht. Sehen. Gestalten. certainly has its place in offices and university libraries, as an introductory text to lighting design or as a general reference book." Veronika Egger in: Information Design Journal 22(2) 2016Table of ContentsLicht und Leben (Warm up), Licht und Physik (Lichttechnische Grundlagen), Licht und Auge (Psychophysiologie der Sehfunktionen), Licht und Wahrnehmung (Interpretative visuelle Apperzeption), Das Phänomen Farbe (Physikalisches und Psychologisches). Literaturverzeichnis, Stichwortverzeichnis, Abbildungsverzeichnis, Epilog Weitere Infos unter http://www.lichtundsehen.at/
£66.02
Springer Verlag, Singapore Basic Electronics Engineering: Including Laboratory Manual
Book SynopsisThis book is primarily designed to serve as a textbook for undergraduate students of electrical, electronics, and computer engineering, but can also be used for primer courses across other disciplines of engineering and related sciences. The book covers all the basic aspects of electronics engineering, from electronic materials to devices, and then to basic electronic circuits. The book can be used for freshman (first year) and sophomore (second year) courses in undergraduate engineering. It can also be used as a supplement or primer for more advanced courses in electronic circuit design. The book uses a simple narrative style, thus simplifying both classroom use and self study. Numerical values of dimensions of the devices, as well as of data in figures and graphs have been provided to give a real world feel to the device parameters. It includes a large number of numerical problems and solved examples, to enable students to practice. A laboratory manual is included as a supplement with the textbook material for practicals related to the coursework. The contents of this book will be useful also for students and enthusiasts interested in learning about basic electronics without the benefit of formal coursework. Table of ContentsCHAPTER 1: Semiconductor – An overview.- CHAPTER 2: Semiconductor Diodes and Applications.- CHAPTER 3: Transistors and other devices.- CHAPTER 4: Optoelectronic Devices.- CHAPTER 5: Digital Electronics.- CHAPTER 6: Transducer.- CHAPTER 7: Communications System.- CHAPTER 8: Simple Laboratory Experiments.
£52.24
Pan Stanford Publishing Pte Ltd Silicon Nanophotonics: Basic Principles, Current
Book SynopsisNanoscale materials are showing great promise in various optoelectronics applications, especially the fast-developing fields of optical communication and optical computers. With silicon as the leading material for microelectronics, the integration of optical functions into silicon technology is a very important challenge. This book concentrates on the optoelectronic properties of silicon nanocrystals, associated phenomena and related topics, from basic principles to the most recent discoveries. The areas of focus include silicon-based light-emitting devices, light modulators, optical wavevguides and interconnectors, optical amplifiers and memory elements. The book comprises theoretical and experimental analyses of various properties of silicon nanocrystals, research methods and preparation techniques, and some promising applications.Trade Review"Silicon Nanophotonics, edited by Leonid Khriachtchev, is a most useful and up-to-date collection of review articles covering the various aspects of silicon-based photonics, written by leading experts in the area. Both theoretical and experimental issues of silicon nanocrystals were considered, as well as device applications in both solid-state photonics and biology. This volume is an essential read for those working to make silicon shine as optoelectronics material."—Prof. Risto M. Nieminen, Helsinki University of Technology, FinlandTable of ContentsSilicon Nanocrystals Enabling Silicon Photonics. Theoretical Studies of Absorption, Emission and Gain in Silicon Nanostructures. Computational Studies of Free-Standing Silicon Nanoclusters. Optical Gain in Silicon Nanocrystal Waveguides Measured by the Variable Stripe Length Technique. Si-nc Based Light Emitters and Er Doping for Gain Materials. Silicon Nanocrystals: Structural and Optical Properties and Device Applications. Optical Spectroscopy of Individual Silicon Nanocrystals. Silicon Nanocrystal Memories,. Engineering the Optical Response of Nanostructured Silicon. Guiding and Amplification of Light Due to Silicon Nanocrystals Embedded in Waveguides. Silicon Nanocrystals in Silica: Optical Properties and Laser-Induced Thermal Effects. Light Emission from Silicon-Rich Nitride Nanostructures. Energy Efficiency in Silicon Photonics. Light Emitting Defects in Ion-Irradiated Alpha-Quartz and Silicon Nanoclusters. Auger Processes in Silicon Nanocrystals Assemblies. Biological Applications of Silicon Nanostructures.
£114.00
Pan Stanford Publishing Pte Ltd Biomaterials for MEMS
Book SynopsisThis book serves as a guide for practicing engineers, researchers, and students interested in MEMS devices that use biomaterials and biomedical applications. It is also suitable for engineers and researchers interested in MEMS and its applications but who do not have the necessary background in biomaterials.Biomaterials for MEMS highlights important features and issues of biomaterials that have been used in MEMS and biomedical areas. Hence this book is an essential guide for MEMS engineers or researchers who are trained in engineering institutes that do not provide the background or knowledge in biomaterials. The topics include fabrication of devices using biomaterials; biocompatible coatings and issues; thin-film biomaterials and MEMS for tissue engineering; and applications involving MEMS and biomaterials.Trade Review…up-to-date coverage of biomaterials and their use in MEMS for biomedical applications, including drug delivery, anti-biofouling and implantable devices. …a guide for practicing engineers, students and researchers. JC Chiao is a Professor of Electrical Engineering University of Texas at Arlington. He has received 4 awarded patents, his research interest include MEMS RF and optical devices, micro/ nanofabrication and applications, wireless sensors, medical micro devices and systems. M. Chiao's current research interests include design and fabrication of MEMS and nanodevices for biomedical applications. He is a recipient of the Young Innovator Award in 2006.—NeoPopRealism - Wonderpedia, Jan/Feb. 2012…up-to-date coverage of biomaterials and their use in MEMS for biomedical applications, including drug delivery, anti-biofouling and implantable devices. …a guide for practicing engineers, students and researchers. JC Chiao is a Professor of Electrical Engineering University of Texas at Arlington. He has received 4 awarded patents, his research interest include MEMS RF and optical devices, micro/ nanofabrication and applications, wireless sensors, medical micro devices and systems. M. Chiao's current research interests include design and fabrication of MEMS and nanodevices for biomedical applications. He is a recipient of the Young Innovator Award in 2006.—NeoPopRealism - Wonderpedia, Jan/Feb. 2012Table of ContentsIntroduction on Biomaterials for MEMS. Fabrication/Materials: Micromachining of Polymeric Materials. Polymers and Surface Coatings. Laser Deposition of Biomaterials. Devices and Applications: Biomaterials ofMEMS Devices for Use in the Human Body. Biodegradable Elastomers for Tissue Regeneration. Neuroregeneration. Biocompatible Flexible Microelectrodes. Micelles and Polymer MEMS Microvalves. Biocompatibility: Vibration Based Anti-Biofouling of Implants. Biomaterials for MEMS Drug Delivery. Characterization of Biomaterials.
£109.25
Pan Stanford Publishing Pte Ltd Disordered Semiconductors: Physics and
Book SynopsisThis textbook links characteristic features of atomic and electronic structures of disordered semiconductors to the device design process. It begins with a description of general concepts of disordered semiconductors, their atomic structures, the structure of energy bands, and their defects, as well as their electrical, optical, and photovoltaic properties. Since weak sensitivity to impurities is a distinguishing feature of disordered semiconductors, methods of property control and thin-film preparation methods are the areas of focus. Finally, applications of disordered semiconductors in various devices are considered.Trade Review"Readers of this book are taken on a logical journey beginning with three comprehensive chapters on the fundamental properties of disordered semiconductors, followed by two outlining the methods used to control the properties and fabricate thin films of these materials, and concluding with two chapters describing the current status of their applications. Students and scientists entering or working in the field will find it an exceedingly valuable and useful text."—Prof. E. A. Davis, University of Cambridge, UK"This book provides under a single cover and from a single perspective a description of physics and applications of disordered semiconductors. With complex issues explained using a simple language this book will be very valuable source of information for graduate and postgraduate students in the field of semiconductor physics and devices."—Dr Alex Kolobov, Advanced Industrial Science and Technology, Japan"This book comprehends a wide group of questions: atomic and electron structure, electrical, optical, photoelectric properties and application of disordered semiconductors, first of all the hydrogenated amorphous silicon, its alloys and chalcogenide glassy semiconductors. Important peculiarity of the book is the consideration of the main technologies of both thin films and devices fabrication. The book is interesting to all workers in the field."—Prof. Victor Lyubin, Ben-Gurion University, IsraelTable of ContentsPrefaceContentsIntroductionDefinition of Disordered StateClassification of Non-crystalline SystemsQualitative and Quantitative Characteristics of Glass-FormationAtomic Structure of Disordered SemiconductorsStructural Characteristics of SolidsShort Range and Medium Range OrderMethods of Investigation of Disordered System StructureSimulation of Disordered Material StructureResults of Structural Research of Disordered SemiconductorsElectronic Structure and Properties of Disordered SemiconductorsElectronic StructureElectrical Properties of Disordered SemiconductorsOptical Properties of Disordered SemiconductorsPhotoelectrical Properties of Disordered SemiconductorsMethods for Controlling Properties of Disordered SemiconductorsDoping of Hydrogenated Amorphous SiliconChemical Modification of Chalcogenide Glassy Semiconductor FilmsConductivity Type Inversion in Bulk Glassy ChalcogenideStructural Modification of Disordered Semiconductors PropertiesPreparation Methods of Disordered Semiconductor FilmsTechnological Distinctions of Chalcogenide Glassy Film PreparationPreparation of Hydrogenated Amorphous Silicon Films by GlowDischargeDecompositionMethodPreparation of AIV BIV Alloys on the Base of Hydrogenated Amorphous SiliconPreparation of Hydrogenated Amorphous Silicon Films by ChemicalVaporDeposition(CVD)MethodsPreparation of Hydrogenated Amorphous Silicon Films by Radio-frequency Sputtering MethodOptical Information Storage and Transmission DevicesDevices Based on Charge Pattern RecordingDevices based on Photo-induced Transformations in Chalcogenide GlassesPhotoelectric and Electronic Devices Based on Disordered SemiconductorsPhotovoltaic DevicesSwitching and Memory Devices on the Basis of Chalcogenide AlloysSilicon Thin Film TransistorsConclusionReferencesColor InsertsIndex
£109.25
Pan Stanford Publishing Pte Ltd Nanostructured Semiconductors: From Basic
Book SynopsisThis book focuses on nanostructured semiconductors, their fabrication, and their application in fields such as optics, acoustics, and biomedicine. It presents recent developments in nanostructured and hybrid materials and also contains a collection of principles and approaches related to nano-size semiconductors. The text summarizes the recent work by renowned scientists, emphasizing the synthesis by self-assembly or prestructuring and characterization methods of such nanosize materials and also discusses the potential applications of nanostructured semiconductors and hybrid systems. It also gives adequate coverage to the novel properties of nanostructured and low-dimensional materials.Table of ContentsA Meta Model for Electrochemical Pore Growth in Semiconductors. ew Approaches to the Production of Porous Silicon by Stain Etching. Silicon nanostructures by self-assembly and metal assisted etching. Synthesis and Characterization of Ge Nanocrystals. SiGe Nanostructures: From Fundamentals to Applications. Mesoporous Silica from Anodization of Silicon: Preparation and Morphologies. Filling of Porous Silicon with Metals by Electrochemical Reactions. Magnetic Nanostructures Embedded in a Porous Silicon Matrix. Manifestations of the Quantum Confinement Effect in the Phototransport Properties of Ensembles of Semiconductor Quantum Dots. Silicon Nanocrystals Embedded in SiO2 Matrices: Ab initio Results. Design of Composite and Multi-Component One-Dimensional Photonic Crystal Structures Based on Silicon. Si-Based Optical Resonators. Optical Properties of Nanoscale Si/SiO2 Superlattices. Nanosilicon for Advanced Post-Scaling Applications. Semiconductor Nanowires and Associated Polymeric Composites: Therapeutic Implications for Smart Tissue Engineering Scaffolds.
£109.25
Pan Stanford Publishing Pte Ltd Light-Induced Defects in Semiconductors
Book SynopsisThis book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.Trade Review"This book is an illuminating review covering some 40 years of active research in the physics of defects in semiconductors, as well as a concentrate of the most recent progress in the field. The authors, who are themselves important contributors in the domain of light-induced defects, present a clear and well-documented review, including spin-dependant effects and a profound analysis of the properties of amorphous semiconductors."Prof. Ionel Solomon, Laboratoire de Physique de la Matière Condensée, France"There is no book that attempts to explain the light-induced defect creations in both crystalline and disordered semiconductors. I am convinced that the present book provides a valuable source of information and resource for MSc and PhD students and researchers with specialization in condensed matter physics, physical chemistry, and related engineering fields."Prof. Koichi Shimakawa, Gifu University, Japan"The authors’ scientific contributions to this field are extremely high. This book introduces students of physics and materials science as well as senior research workers to light-induced defects in semiconductors. An excellent reference source of the topic can be found at the end of the book."Prof. Sandor Kugler, Budapest University of Technology and Economics, Hungary"This book presents an extensive review of photo-induced electronic properties of both crystalline and non-crystalline bulk semiconductors. It is a valuable source of reference for graduate students and all researchers in the fields of condensed matter physics, industrial physics, and materials science and engineering."Prof. Jai Singh, Charles Darwin University, AustraliaTable of ContentsIntroduction. Crystalline Semiconductors. Hydrogenated Amorphous Silicon. Hydrogenated Microcrystalline Silicon. Amorphous Chalcogenides. Appendix. Bibliography. Index.
£109.25
Pan Stanford Publishing Pte Ltd 50 Years in the Semiconductor Underground
Book SynopsisThis book was derived from a talk that the author gave at the International Conference on Advanced Nanodevices and Nanotechnology in Hawaii. The book is about science and engineering, but is not on science and engineering. It is not a textbook which develops the understanding of a small part of the field, but a book about random encounters and about the strengths and the foibles of living as a physicist and engineer for half a century. It presents the author’s personal views on science, engineering, and life and is illustrated by a number of lively stories about various events, some of which shaped his life. Trade Review"Professor Ferry combines, in a masterful way, topics that have represented the leading edge of semiconductor science and engineering. His discussions of engineering questions, as seen from the different viewpoints of Bohr and Einstein respectively, are amusing and will resonate with anyone who is getting tired of hearing that no one can understand quantum mechanics. A must read for the engineering student who is also a science fan." —Prof. Karl Hess, Author of Einstein Was Right!Table of ContentsIn the Beginning. Threads of Science. The Rise of the Chip. Challenging Physics. Some Views of Science. Science and Life May Be Fickle. The Light Side of Science. Arrogance and Ignorance. How Big Is an Electron.
£36.09
The University of Chicago Press Tunnel Visions
Book Synopsis
£28.00
John Wiley & Sons Inc Wafer Manufacturing
Book SynopsisPresenting all the major stages in wafer manufacturing, from crystals to prime wafers. This book first outlines the physics, associated metrology, process modelling and quality requirements and the goes on to discuss wafer forming and wafer surface preparation techniques.Table of ContentsPreface xi Acknowledgement xiii Part I From Crystal to Prime Wafers 1 1 Wafers and Semiconductors 3 1.1 Introduction 3 1.2 Semiconductor Revolution 3 1.2.1 Classification of Materials 3 1.2.2 Semiconductor Revolution Today 5 1.2.3 SiliconWafers and Solar Cells 6 1.3 SiliconWafers Used in Device Manufacturing (IC and MEMS) 7 1.3.1 StandardWafer Diameters and Sizes 8 1.3.2 Crystalline Orientation of SiliconWafers 9 1.3.3 Moore’s Law 11 1.4 Surface Properties and Quality Measurements ofWafers 11 1.4.1 SurfaceWaviness: TTV, Bow, andWarp 11 1.4.2 Discussion onWarp 16 1.4.3 Automated Measurements of TTV,Warp, Bow, and Flatness 17 1.4.4 Wafer Flatness 17 1.4.5 Nanotopography or Nanotopology 21 1.4.6 Surface Roughness 22 1.5 Other Properties and Quality Requirements of SiliconWafers 27 1.5.1 Mechanical and Material Properties 27 1.5.2 Property of Silicon with Anisotropy 27 1.5.3 Gravity-induced Deflection ofWafers 30 1.5.4 Wafer Edge Properties 31 1.6 Economics ofWafer Manufacturing 32 1.6.1 Three Categories ofWafers 32 1.6.2 Cost of SiliconWafers 34 1.7 Summary 35 References 35 2 Wafer Manufacturing: Generalized Processes and Flow 39 2.1 Introduction 39 2.2 Wafer Manufacturing: Generalized Process Flow 39 2.3 Crystal Growth 41 2.3.1 Melt Growth 41 2.3.2 Vapor Growth 49 2.3.3 Epitaxial Growth 49 2.3.4 Casting Polycrystalline Crystal 51 2.3.5 Other Crystal Growth Methods 51 2.4 Wafer Forming 52 2.4.1 Cropping 52 2.4.2 Trimming 52 2.4.3 Orientation Identification 52 2.4.4 Slicing 52 2.4.5 Slicing Using the Inner-diameter (ID) Saw 53 2.4.6 Slicing Using a Wiresaw 54 2.4.7 Other Tools for Slicing 55 2.4.8 Edge Rounding 56 2.5 Wafer Polishing 56 2.5.1 Lapping 57 2.5.2 Grinding 57 2.5.3 Etching 58 2.5.4 Polishing 58 2.6 Wafer Preparation 58 2.6.1 Cleaning 58 2.6.2 Inspection 59 2.6.3 Packaging 59 2.7 Industrial Processes ofWafer Manufacturing 59 2.7.1 Crystal Growth 60 2.7.2 Wafer Forming 61 2.7.3 Wafer Lapping and Polishing 63 2.7.4 Wafer Preparation 66 2.8 Summary 67 References 68 3 Process Modeling and Manufacturing Processes 71 3.1 Introduction 71 3.2 Wafer Manufacturing and Brittle Materials 71 3.3 Ductile Machining Versus Brittle Machining 73 3.4 Abrasive Machining inWafer Manufacturing 74 3.4.1 Bonded Abrasive Machining (BAM) 75 3.4.2 Free Abrasive Machining (FAM) 75 3.5 Abrasive Materials 76 3.5.1 Classification of the Grain Size of Abrasive Materials 77 3.5.2 Hardness of Abrasive Materials 78 3.5.3 Commonly Used Abrasive Materials inWafer Manufacturing 81 3.6 Ductile Machining of Brittle Materials 82 3.6.1 Research on Ductile Machining and Challenges 83 3.6.2 Opportunity and Future Research 83 3.7 Process Modeling ofWafer Manufacturing Processes 84 3.7.1 Rolling-indenting and Scratching-indenting Process Models of FAM 84 3.7.2 Comparison Between Wiresawing and Lapping 87 3.7.3 Other Aspects of Engineering Modeling 88 3.8 Abrasive Slurry in FAM Processes 89 3.8.1 Composition of Abrasive Slurry 89 3.8.2 Comparison ofWater and Glycol as a Carrier Fluid for Slurry 90 3.8.3 Recycling of Abrasive Grits in Slurry 91 3.9 Summary 93 References 93 Part II Wafer Forming 97 4 Wafer Slicing Using a Modern Slurry Wiresaw and Other Saws 99 4.1 Introduction 99 4.2 The Modern Wiresaw Technology 100 4.2.1 Historical Perspectives of Saws UsingWire 100 4.2.2 The Rise of the PV Industry andWafer Slicing 102 4.3 The Three Categories of Saw forWafer Slicing 103 4.4 Inner-diameter (ID) Saw 103 4.5 The Modern Slurry Wiresaw 105 4.5.1 The Control and Program Console 106 4.5.2 The Wire Management Unit 106 4.5.3 Uni-directional Versus Bi-directional Wire Motion 110 4.5.4 The Slicing Compartment 113 4.5.5 Directions of Ingot Feeding 114 4.5.6 Consumables and Other Operations 116 4.6 Comparison Between the ID Saw and Wiresaw 116 4.7 Research Issues inWiresaw Manufacturing Processes 120 4.8 Summary 121 References 121 5 Modeling of the Wiresaw Manufacturing Process and Material Characteristics 127 5.1 Introduction 127 5.2 The Rolling-indenting Model 129 5.3 Vibration Modeling and Analysis 131 5.3.1 A Historical Perspective on the Vibration ofWire 132 5.3.2 Equation of Motion of a Moving Wire 133 5.3.3 Modal Analysis of an Undamped Moving Wire 134 5.3.4 Response for Point-wise Harmonic Excitation 134 5.3.5 Natural Frequency of Vibration and Stability 135 5.3.6 Numerical Solution Using Galerkin’s Method 138 5.3.7 Response of Multiple-point and Distributed Excitations 139 5.3.8 Frequency Response of Multiple Excitations 141 5.3.9 Vibration Responses of a Moving Wire with Damping 143 5.3.10 Discussions 144 5.4 Damping Factor of the Slurry Wiresaw Systems 145 5.5 Elasto-hydrodynamic Process Modeling 147 5.5.1 Approach of Modeling of EHD in the Wiresawing Process 148 5.5.2 Theoretical Modeling 149 5.5.3 Results of the EHD Analysis 150 5.5.4 Implications Related to Floating Machining and Rolling-indenting Modeling of Modern Slurry Wiresaws 152 5.5.5 Important Conclusions from EHD Modeling 155 5.6 Thermal Management 156 5.7 Wire, WireWeb, and Slurry Management 156 5.7.1 Real-time and On-line Monitoring of WireWear 157 5.7.2 Monitoring the Pitch of the WireWeb Spacing 160 5.7.3 Mixing Ratio of Slurry Consisting of Abrasive Grits and Carrier Fluid 162 5.8 Summary 162 References 163 6 Diamond-Impregnated Wire Saws and the Sawing Process 169 6.1 Introduction 169 6.2 Manufacturing Processes of Diamond-impregnated Wires 171 6.2.1 Resinoid Wires 172 6.2.2 Electroplated Wires 174 6.2.3 Machines and Operations of Diamond Wire Saws 175 6.3 Slicing Mechanism of a Diamond Wire Saw 177 6.4 Properties ofWafers Sliced by Diamond Wire Saws 180 6.4.1 Wafer Surface 180 6.4.2 Wafer Fracture Strength 181 6.4.3 Residual Stress and Stress Relaxation 182 6.4.4 PVWafer Efficiency 182 6.4.5 Cost ofWafering 182 6.5 Slicing Performance with Different Process Parameters 183 6.5.1 Effect of Wire Speed 183 6.5.2 Effect of Feed Rate 183 6.5.3 Effect of Grain Density 184 6.5.4 Effect of Wire Tension 184 6.6 Summary 184 References 185 Part III Wafer Surface Preparation and Management 189 7 Lapping 191 7.1 Introduction 191 7.2 Fundamentals of Lapping and FAM 192 7.3 Various Configurations and Types of Lapping Operation 195 7.3.1 Single-sided Lapping 200 7.3.2 Double-sided Lapping 201 7.3.3 Soft-pad Lapping 201 7.3.4 Further References 202 7.4 Lapping and Preliminary Planarization 202 7.4.1 Quality Driven Needs for Preliminary Planarization 202 7.4.2 Cost Driven Needs for Preliminary Planarization 203 7.5 Technical Challenges and Advances in Lapping 204 7.5.1 Technical Considerations 205 7.5.2 Advances in Lapping 206 7.6 Summary 206 References 207 8 Chemical Mechanical Polishing 209 8.1 Introduction 209 8.2 Chemical Mechanical Polishing (CMP) 210 8.2.1 Schematic Illustration of the CMP Process and System 210 8.2.2 Measurement and Evaluation of the SiliconWafer after Polishing 213 8.2.3 Specifications for Polished SiliconWafers 214 8.2.4 Types of CMP Processes 215 8.2.5 Challenges of CMP Technology 215 8.3 Polishing Pad Technology 215 8.3.1 Polishing Pad Conditioning 216 8.4 Polishing Slurry Technology 217 8.5 Edge Polishing 218 8.5.1 Fundamentals of Edge Polishing 218 8.5.2 Challenges of Edge Polishing 218 8.6 Summary 219 References 219 9 Grinding, Edge Grinding, Etching, and Surface Cleaning 223 9.1 Introduction 223 9.2 Wafer Grinding for Surface Processing 223 9.2.1 Wafer Grinding Methods 223 9.2.2 Grinding Wheel Technology 226 9.2.3 Types of Grinding Operations 227 9.2.4 Technical Challenges and Advances in Grinding 228 9.3 Edge Grinding 228 9.3.1 Fundamentals of Edge Grinding 229 9.3.2 Technical Challenges in Edge Grinding 231 9.4 Etching 231 9.4.1 Acid Etching 232 9.4.2 Caustic Etching 232 9.4.3 Preferential Etching 232 9.4.4 Technical Challenges and Advances in Etching 235 9.5 Surface Cleaning 236 9.5.1 Impurities on the Surface of a SiliconWafer 236 9.5.2 Various Cleaning Steps inWafer Process Flow 237 9.6 RCA Standard Clean 238 9.6.1 Introduction 238 9.6.2 RCA Cleaning Protocol 239 9.6.3 Techniques and Variations of the RCA Method 240 9.6.4 The Evolution of SiliconWafer Cleaning Technology 241 9.7 Summary 241 References 242 10 Wafer Metrology and Optical Techniques 247 10.1 Introduction 247 10.2 Evaluation and Inspection of theWafer Surface 247 10.2.1 Wafer Surface Specifications 247 10.3 Wafer Defects and Inspection 251 10.3.1 Defect Classification 251 10.3.2 Impact ofWafer Defects on Device Yield and Performance 253 10.3.3 Defect Inspection Techniques and Systems 254 10.4 Measurement of theWafer Surface Using Moiré Optical Metrology 256 10.4.1 Measurement of theWafer Surface Using Shadow Moiré with the Talbot Effect 257 10.4.2 Enhancing the Resolution of Shadow Moiré with “Phase Shifting” 262 10.4.3 WireWeb Management Using Optical Metrology Technology 273 10.5 Summary 274 References 274 11 Conclusion 279 11.1 (I) From Crystal to PrimeWafers 279 11.2 (II) Wafer Forming 280 11.3 (III) Wafer Surface Preparation and Management 281 11.4 Final Remarks 282 Index 283
£94.46
John Wiley & Sons Inc Continuous Monitoring for Hazardous Material
Book SynopsisOffers technical background and guidance to prepare any workplace for gas-leak catastrophes Determines when monitoring for catastrophic release is appropriate Breaks down gas monitoring equipment options Guides work safety professionals on the placement of monitoring equipment. Offers case studies for concrete analysis. .Table of Contents1. Introduction. 1.1 Purpose. 1.2 Scope. 1.3 Who Will Benefit from this Guideline? 2. Management. 2.1 Management Overview. 2.2 Why Do We Use Gas Detectors? 2.3 What Do We Want to Detect? 2.4 What Actions Do We Expect to Undertake in the Event of a Release? 2.5 How Much Should We Spend on Detection? 3. Determining Where Gas Detection May or May Not be Beneficial. 3.1 Assessing Where Gas Detection may be Beneficial. 3.2 Situations Where Other Technologies May be More Beneficial. 3.3 Situations Where Gas Detection Is Recommended by Consensus. or Mandated By Law. 3.4 Situations Where Toxic Gas Detection May be Beneficial. 3.5 Situations Where Combustible Detection May be Beneficial. 3.6 Example Applications of the Continuous Monitoring System. 3.7 References. 3.8 Glossary. 4. Sensor Technology. 4.1 Introduction. 4.2 Description of Gases and Vapors. 4.3 Available Sensors and How they Work. 4.4 Factors to Consider when Choosing a Sensor. 4.5 Sensor Performance Variables. 4.6 References. 4.7 Glossary. 5. Approaches to Detector Placement and Configuration. 5.1 General Guidance for Detector Placement and Configuration. 5.2 General Guidance for Toxic Gas Detection. 5.3 General Guidance for Flammable Detection. 5.4 Detector Placement for Source Monitoring. 5.5 Detector Placement for Volumetric Monitoring. 5.6 Detector Placement for Enclosure Monitoring. 5.7 Detector Placement for Path of Travel and Target Receptor Monitoring. 5.8 Detector Placement for Perimeter Monitoring. 5.9 Detector Set Points and Monitoring. 6. Overall System Management - Commissioning, Testing, and Maintenance. 6.1 Summary. 6.2 Training. 6.3 Documentation. 6.4 Maintenance. 6.5 Establish a Good Relationship with the Local Authority-Having Jurisdiction (AHJ. 6.6 Change Management.
£75.56
John Wiley & Sons Inc High Efficiency RF and Microwave Solid State
Book SynopsisDo you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of Table of ContentsPreface. About the Authors. Acknowledgments. 1 Power Amplifier Fundamentals. 1.1 Introduction. 1.2 Definition of Power Amplifier Parameters. 1.3 Distortion Parameters. 1.4 Power Match Condition. 1.5 Class of Operation. 1.6 Overview of Semiconductors for PAs. 1.7 Devices for PA. 1.8 Appendix: Demonstration of Useful Relationships. 1.9 References. 2 Power Amplifier Design. 2.1 Introduction. 2.2 Design Flow. 2.3 Simplified Approaches. 2.4 The Tuned Load Amplifier. 2.5 Sample Design of a Tuned Load PA. 2.6 References. 3 Nonlinear Analysis for Power Amplifiers. 3.1 Introduction. 3.2 Linear vs. Nonlinear Circuits. 3.3 Time Domain Integration. 3.4 Example. 3.5 Solution by Series Expansion. 3.6 The Volterra Series. 3.7 The Fourier Series. 3.8 The Harmonic Balance. 3.9 Envelope Analysis. 3.10 Spectral Balance. 3.11 Large Signal Stability Issue. 3.12 References. 4 Load Pull. 4.1 Introduction. 4.2 Passive Source/Load Pull Measurement Systems. 4.3 Active Source/Load Pull Measurement Systems. 4.4 Measurement Test-sets. 4.5 Advanced Load Pull Measurements. 4.6 Source/Load Pull Characterization. 4.7 Determination of Optimum Load Condition. 4.8 Appendix: Construction of Simplified Load Pull Contours through Linear Simulations. 4.9 References. 5 High Efficiency PA Design Theory. 5.1 Introduction. 5.2 Power Balance in a PA. 5.3 Ideal Approaches. 5.4 High Frequency Harmonic Tuning Approaches. 5.5 High Frequency Third Harmonic Tuned (Class F). 5.6 High Frequency Second Harmonic Tuned. 5.7 High Frequency Second and Third Harmonic Tuned. 5.8 Design by Harmonic Tuning. 5.9 Final Remarks. 5.10 References. 6 Switched Amplifiers. 6.1 Introduction. 6.2 The Ideal Class E Amplifier. 6.3 Class E Behavioural Analysis. 6.4 Low Frequency Class E Amplifier Design. 6.5 Class E Amplifier Design with 50% Duty-cycle. 6.6 Examples of High Frequency Class E Amplifiers. 6.7 Class E vs. Harmonic Tuned. 6.8 Class E Final Remarks. 6.9 Appendix: Demonstration of Useful Relationships. 6.10 References. 7 High Frequency Class F Power Amplifiers. 7.1 Introduction. 7.2 Class F Description Based on Voltage Wave-shaping. 7.3 High Frequency Class F Amplifiers. 7.4 Bias Level Selection. 7.5 Class F Output Matching Network Design. 7.6 Class F Design Examples. 7.7 References. 8 High Frequency Harmonic Tuned Power Amplifiers. 8.1 Introduction. 8.2 Theory of Harmonic Tuned PA Design. 8.3 Input Device Nonlinear Phenomena: Theoretical Analysis. 8.4 Input Device Nonlinear Phenomena: Experimental Results. 8.5 Output Device Nonlinear Phenomena. 8.6 Design of a Second HT Power Amplifier. 8.7 Design of a Second and Third HT Power Amplifier. 8.8 Example of 2nd HT GaN PA. 8.9 Final Remarks. 8.10 References. 9 High Linearity in Efficient Power Amplifiers. 9.1 Introduction. 9.2 Systems Classification. 9.3 Linearity Issue. 9.4 Bias Point Influence on IMD. 9.5 Harmonic Loading Effects on IMD. 9.6 Appendix: Volterra Analysis Example. 9.7 References. 10 Power Combining. 10.1 Introduction. 10.2 Device Scaling Properties. 10.3 Power Budget. 10.4 Power Combiner Classification. 10.5 The T-junction Power Divider. 10.6 Wilkinson Combiner. 10.7 The Quadrature (90◦) Hybrid. 10.8 The 180◦ Hybrid (Ring Coupler or Rat-race). 10.9 Bus-bar Combiner. 10.10 Other Planar Combiners. 10.11 Corporate Combiners. 10.12 Resonating Planar Combiners. 10.13 Graceful Degradation. 10.14 Matching Properties of Combined PAs. 10.15 Unbalance Issue in Hybrid Combiners. 10.16 Appendix: Basic Properties of Three-port Networks. 10.17 References. 11 The Doherty Power Amplifier. 11.1 Introduction. 11.2 Doherty’s Idea. 11.3 The Classical Doherty Configuration. 11.4 The ‘AB-C’ Doherty Amplifier Analysis. 11.5 Power Splitter Sizing. 11.6 Evaluation of the Gain in a Doherty Amplifier. 11.7 Design Example. 11.8 Advanced Solutions. 11.9 References. Index.
£111.56
John Wiley & Sons Inc ESD Basics
Book SynopsisElectrostatic discharge (ESD) continues to impact semiconductor manufacturing, semiconductor components and systems, as technologies scale from micro- to nano electronics. This book introduces the fundamentals of ESD, electrical overstress (EOS), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup, as well as provides a coherent overview of the semiconductor manufacturing environment and the final system assembly. It provides an illuminating look into the integration of ESD protection networks followed by examples in specific technologies, circuits, and chips. The text is unique in covering semiconductor chip manufacturing issues, ESD semiconductor chip design, and system problems confronted today as well as the future of ESD phenomena and nano-technology. Look inside for extensive coverage on: The fundamentals of electrostatics, triboelectric charging, and how they relate to present day manufacturing environments of micro-Trade Review"With 146 figures including colour blood films and haematology slides, the book provides a pleasant state-of-the-art introduc-tion to clinical haematology. There is a self-assess- ment section at the end." (Journal of Tropical Pediatrics, 1 April 2011) Table of ContentsAbout the Author xiii Preface xv Acknowledgments xvii 1 Fundamentals of Electrostatics 1 1.1 Introduction 1 1.2 Electrostatics 1 1.2.1 Thales of Miletus and Electrostatic Attraction 2 1.2.2 Electrostatics and the Triboelectric Series 3 1.2.3 Triboelectric Series and Gilbert 4 1.2.4 Triboelectric Series and Gray 4 1.2.5 Triboelectric Series and Dufay 4 1.2.6 Triboelectric Series and Franklin 5 1.2.7 Electrostatics – Symmer and the Human Body Model 5 1.2.8 Electrostatics – Coulomb and Cavendish 5 1.2.9 Electrostatics – Faraday and the Ice Pail Experiment 5 1.2.10 Electrostatics – Faraday and Maxwell 6 1.2.11 Electrostatics – Paschen 6 1.2.12 Electrostatics – Stoney and the “Electron” 6 1.3 Triboelectric Charging – How does it Happen? 7 1.4 Conductors, Semiconductors, and Insulators 8 1.5 Static Dissipative Materials 8 1.6 ESD and Materials 9 1.7 Electrification and Coulomb’s Law 9 1.7.1 Electrification by Friction 10 1.7.2 Electrification by Induction 10 1.7.3 Electrification by Conduction 10 1.8 Electromagnetism and Electrodynamics 11 1.9 Electrical Breakdown 11 1.9.1 Electrostatic Discharge and Breakdown 11 1.9.2 Breakdown and Paschen’s Law 12 1.9.3 Breakdown and Townsend 12 1.9.4 Breakdown and Toepler’s Law 13 1.9.5 Avalanche Breakdown 13 1.10 Electroquasistatics and Magnetoquasistatics 15 1.11 Electrodynamics and Maxwell’s Equations 16 1.12 Electrostatic Discharge (ESD) 16 1.13 Electromagnetic Compatibility (EMC) 16 1.14 Electromagnetic Interference (EMI) 16 1.15 Summary and Closing Comments 17 References 17 2 Fundamentals of Manufacturing and Electrostatics 21 2.1 Materials, Tooling, Human Factors, and Electrostatic Discharge 22 2.1.1 Materials and Human Induced Electric Fields 23 2.2 Manufacturing Environment and Tooling 23 2.3 Manufacturing Equipment and ESD Manufacturing Problems 23 2.4 Manufacturing Materials 24 2.5 Measurement and Test Equipment 24 2.5.1 Manufacturing Testing for Compliance 25 2.6 Grounding and Bonding Systems 27 2.7 Worksurfaces 27 2.8 Wrist Straps 28 2.9 Constant Monitors 28 2.10 Footwear 28 2.11 Floors 28 2.12 Personnel Grounding with Garments 29 2.12.1 Garments 29 2.13 Air Ionization 29 2.14 Seating 29 2.15 Carts 30 2.16 Packaging and Shipping 31 2.16.1 Shipping Tubes 31 2.16.2 Trays 32 2.17 ESD Identification 32 2.18 ESD Program Management – Twelve Steps to Building an ESD Strategy 32 2.19 ESD Program Auditing 33 2.20 ESD On-Chip Protection 33 2.21 Summary and Closing Comments 34 References 34 3 ESD, EOS, EMI, EMC and Latchup 39 3.1 ESD, EOS, EMI, EMC and Latchup 39 3.1.1 ESD 39 3.1.2 EOS 40 3.1.3 EMI 40 3.1.4 EMC 41 3.1.5 Latchup 41 3.2 ESD Models 41 3.2.1 Human Body Model (HBM) 41 3.2.2 Machine Model (MM) 43 3.2.3 Cassette Model 45 3.2.4 Charged Device Model (CDM) 46 3.2.5 Transmission Line Pulse (TLP) 46 3.2.6 Very Fast Transmission Line Pulse (VF-TLP) 50 3.3 Electrical Overstress (EOS) 50 3.3.1 EOS Sources – Lightning 51 3.3.2 EOS Sources – Electromagnetic Pulse (EMP) 52 3.3.3 EOS Sources – Machinery 52 3.3.4 EOS Sources – Power Distribution 52 3.3.5 EOS Sources – Switches, Relays and Coils 53 3.3.6 EOS Design Flow and Product Definition 53 3.3.7 EOS Sources – Design Issues 54 3.3.8 EOS Failure Mechanisms 55 3.4 EMI 57 3.5 EMC 57 3.6 Latchup 58 3.7 Summary and Closing Comments 59 References 59 4 System Level ESD 65 4.1 System Level Testing 65 4.1.1 System Level Testing Objectives 66 4.1.2 Distinction of System and Component Level Testing Failure Criteria 66 4.2 When Systems and Chips Interact 67 4.3 ESD and System Level Failures 68 4.3.1 ESD Current and System Level Failures 68 4.3.2 ESD Induced E- and H-Fields and System Level Failures 69 4.4 Electronic Systems 70 4.4.1 Cards and Boards 70 4.4.2 System Chassis and Shielding 71 4.5 System Level Problems Today 71 4.5.1 Hand Held Systems 71 4.5.2 Cell Phones 71 4.5.3 Servers and Cables 72 4.5.4 Laptops and Cables 74 4.5.5 Disk Drives 74 4.5.6 Digital Cameras 75 4.6 Automobiles, ESD, EOS, and EMI 77 4.6.1 Automobiles and ESD – Ignition Systems 77 4.6.2 Automobiles and EMI – Electronic Pedal Assemblies 77 4.6.3 Automobiles and Gas Tank Fires 78 4.6.4 Hybrids and Electric Cars 78 4.6.5 Automobiles in the Future 79 4.7 Aerospace Applications 80 4.7.1 Airplanes, Partial Discharge, and Lightning 80 4.7.2 Satellites, Spacecraft Charging, and Single Event Upset (SEU) 81 4.7.3 Space Landing Missions 81 4.8 ESD and System Level Test Models 83 4.9 IEC 61000-4-2 83 4.10 Human Metal Model (HMM) 83 4.11 Charged Board Model (CBM) 86 4.12 Cable Discharge Event (CDE) 87 4.12.1 Cable Discharge Event (CDE) and Scaling 89 4.12.2 Cable Discharge Event (CDE) – Cable Measurement Equipment 89 4.12.3 Cable Configuration – Test Configuration 92 4.12.4 Cable Configuration – Floating Cable 92 4.12.5 Cable Configuration – Held Cable 92 4.12.6 Cable Discharge Event (CDE) – Peak Current vs. Charged Voltage 92 4.12.7 Cable Discharge Event (CDE) – Plateau Current vs Charged Voltage 92 4.13 Summary and Closing Comments 93 References 93 5 Component Level Issues – Problems and Solutions 97 5.1 ESD Chip Protection – The Problem and the Cure 97 5.2 ESD Chip Level Design Solutions – Basics of Design Synthesis 98 5.2.1 ESD Circuits 101 5.2.2 ESD Signal Pin Protection Networks 101 5.2.3 ESD Power Clamp Protection Networks 103 5.2.4 ESD Power Domain-to-Domain Circuitry 103 5.2.5 ESD Internal Signal Line Domain-to-Domain Protection Circuitry 104 5.3 ESD Chip Floor Planning – Basics of Design Layout and Synthesis 105 5.3.1 Placement of ESD Signal Pin HBM Circuitry 106 5.3.2 Placement of ESD Signal Pin CDM Circuitry 107 5.3.3 Placement of ESD Power Clamp Circuitry 107 5.3.4 Placement of ESD VSS-to-VSS Circuitry 109 5.4 ESD Analog Circuit Design 109 5.4.1 Symmetry and Common Centroid Design for ESD Analog Circuits 110 5.4.2 Analog Signal Pin to Power Rail ESD Network 111 5.4.3 Common Centroid Analog Signal Pin to Power Rail ESD Network 111 5.4.4 Co-synthesis of Common Centroid Analog Circuit and ESD Networks 112 5.4.5 Signal Pin-to-Signal Pin Differential Pair ESD Network 113 5.4.6 Common Centroid Signal Pin Differential Pair ESD Protection 113 5.5 ESD Radio Frequency (RF) Design 115 5.5.1 ESD Radio Frequency (RF) Design Practices 115 5.5.2 ESD RF Circuits – Signal Pin ESD Networks 121 5.5.3 ESD RF Circuits – ESD Power Clamps 123 5.5.4 ESD RF Circuits – ESD RF VSS-to-VSS Networks 126 5.6 Summary and Closing Comments 127 References 127 6 ESD in Systems – Problems and Solutions 129 6.1 ESD System Solutions from Largest to Smallest 129 6.2 Aerospace Solutions 129 6.3 Oil Tanker Solutions 130 6.4 Automobile Solutions 130 6.5 Computers – Servers 131 6.5.1 Servers – Touch Pads and Handling Procedures 131 6.6 Mother Boards and Cards 131 6.6.1 System Card Insertion Contacts 131 6.6.2 System Level Board Design – Ground Design 131 6.7 System Level “On Board” ESD Protection 133 6.7.1 Spark Gaps 134 6.7.2 Field Emission Devices (FED) 136 6.8 System Level Transient Solutions 140 6.8.1 Transient Voltage Suppression (TVS) Devices 141 6.8.2 Polymer Voltage Suppression (PVS) Devices 143 6.9 Package-Level Mechanical ESD Solutions – Mechanical “Crowbars” 144 6.10 Disk Drive ESD Solutions 145 6.10.1 In Line “ESD Shunt” 145 6.10.2 Armature – Mechanical “Shunt” – A Built-In Electrical “Crowbar” 145 6.11 Semiconductor Chip Level Solutions – Floor Planning, Layout, and Architecture 147 6.11.1 Mixed Signal Analog and Digital Floor Planning 147 6.11.2 Bipolar-CMOS-DMOS (BCD) Floor Planning 148 6.11.3 System-on Chip Design Floor Planning 148 6.12 Semiconductor Chip Solutions – Electrical Power Grid Design 149 6.12.1 HMM and IEC Specification Power Grid and Interconnect Design Considerations 150 6.12.2 ESD Power Clamp Design Synthesis – IEC 61000-4-2 Responsive ESD Power Clamps 151 6.13 ESD and EMC – When Chips Bring Down Systems 152 6.14 System Level and Component Level ESD Testing and System Level Response 152 6.14.1 Time Domain Reflection (TDR) and Impedance Methodology for ESD Testing 152 6.14.2 Time Domain Reflectometry (TDR) ESD Test System Evaluation 154 6.14.3 ESD Degradation System Level Method – Eye Tests 158 6.15 EMC and ESD Scanning 160 6.16 Summary and Closing Comments 163 References 164 7 Electrostatic Discharge (ESD) in the Future 167 7.1 What is in the Future for ESD? 167 7.2 Factories and Manufacturing 167 7.3 Photo-Masks and Reticles 168 7.3.1 ESD Concerns in Photo-Masks 169 7.3.2 Avalanche Breakdown in Photo-Masks 170 7.3.3 Electrical Model in Photo-Masks 171 7.3.4 Failure Defects in Photo-Masks 172 7.4 Magnetic Recording Technology 174 7.5 Micro-Electromechanical (MEM) Devices 176 7.5.1 ESD Concerns in Micro-Electromechanical (MEM) Devices 177 7.6 Micro-Motors 178 7.6.1 ESD Concerns in Micro-Motors 178 7.7 Micro-Electromechanical (MEM) RF Switches 180 7.7.1 ESD Concerns in Micro-Electromechanical (MEM) RF Switches 180 7.8 Micro-Electromechanical (MEM) Mirrors 182 7.8.1 ESD Concerns in Micro-Electromechanical (MEM) Mirrors 182 7.9 Transistors 183 7.9.1 Transistors – Bulk vs. SOI Technology 184 7.9.2 Transistors and FinFETs 185 7.9.3 ESD in FinFETs 185 7.10 Silicon Nanowires 187 7.11 Carbon Nanotubes 187 7.12 Future Systems and System Designs 188 7.13 Summary and Closing Comments 189 References 190 Glossary 195 ESD Standards 199 Index 203
£74.66
John Wiley & Sons Inc Design and Analysis of Heat Sinks
Book SynopsisThis book presents new design techniques that permit an engineer to design devices with predictable results, and in doing so utilize very complex shapes instead of being limited to simple shapes. Includes coverage of the material properties of the devices.Table of ContentsLinear Transformations. Elements of the Linear Transformations. Singular Fins and Spines and Single Elements. Algorithms for Finned Array Assembly. Examples of Finned Array Analysis. Reciprocity and Node Analysis. A General Array Method. Convective Optimizations. Heat Transfer-Parallel Plate Heat Sinks. References. Appendices. Indexes.
£142.16
Wiley Liquid Cooling of Electronic Devices by
Book SynopsisChanneling or controlling the heat generated by electronics products is a vital concern of product developers: fail to confront this issue and the chances of product failure escalate. This third book in the series explores yet another method of heat management-the use of liquids to absorb and remove heat away from vital parts of the electronic systems.Table of ContentsFundamentals of Heat Transfer and Fluid Flow. Natural Convection. Channel Flows. Jet Impingement Cooling. Heat Transfer Enhancement. Appendices. References. Indexes.
£104.36
John Wiley & Sons Inc Encyclopedia of Smart Materials 2 Volume Set
Book SynopsisSmart materials--materials and structures that can impart information about their environment to an observer or monitoring device--are revolutionizing fields as diverse as engineering, optics, and medical technology. Advances in smart materials are impacting disciplines across the scientific and technological landscape.Trade Review"The contents of this encyclopedia will not fail to meet expectations of readers.... I strongly recommend this encyclopedia to researchers..." (Pharmaceutical Research, Vol. 19, No. 12, December 2002) "...written throughout at a high intellectual level and covering an impressive range of themes..." (Intermetallics, No.11, 2003) "...the actual content of the work is prodigious?a rich collection of detail knowledge and general information..." (Journal of Materials Technology, March 2003) "...a key reference, providing a broad and accessible description of a complex and growing interdisciplinary field?recommended..." (Choice, Vol. 40, No. 8, April 2003) "...an interesting compendium of smart materials...the wide use of polymers, which is of interest to our readers, is discussed throughout...useful..." (Polymer News)Table of ContentsBiomedical Sensing. Abstract. 1. Introduction. 2. Medical, Therapeutic, and Diagnostic Applications of Biosensors. 3. Polymers as Electrode Coatings and Biosensor Mediators. 4. Immobilization Techniques and Materials. 5. Smart Polymers for Immobilization and Bioconjugate Materials. 6. Biosensor Operation. 7. Glucose Sensors. 8. Other Analytes for Biological Sensing. 9. Modes of Response in Smart Polymers. 10. Molecular Imprinting. 11. Possibilities for Future Development. Bibliography. Figures. Tables.
£999.99
John Wiley & Sons Inc Fundamentals of Semiconductor Fabrication
Book SynopsisFrom crystal growth to integrated devices and circuits, this new book offers a basic, up-to-date introduction to semiconductor fabrication technology, including both the theoretical and practical aspects of all major steps in the fabrication sequence.Table of ContentsChapter 1. Introduction. Chapter 2. Crystal Growth. Chapter 3. Silicon Oxidation. Chapter 4. Photolithography. Chapter 5. Etching. Chapter 6. Diffusion. Chapter 7. Ion Implantation. Chapter 8. Film Deposition. Chapter 9. Process Integration. Chapter 10. IC Manufacturing. Chapter 11. Future Trends and Challenges. Appendix A: List of Symbols. Appendix B: International System of Units (SI Units). Appendix C: Unit Prefixes. Appendix D: Greek Alphabet. Appendix E: Physical Constants. Appendix F: Properties of Si and GaAs at 300 K. Appendix G: Some Properties of the Error Function. Appendix H: Basic Kinetic Theory of Gases. Appendix I: SUPREM Commands. Appendix J: Running PROLITH. Appendix K. Percentage Points of the t Distribution. Appendix L: Percentage Points of the F Distribution. Index.
£143.45
John Wiley & Sons Inc Insulated Gate Bipolar Transistor Igbt Theory and
Book SynopsisA comprehensive and state-of-the-art coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures. Table of ContentsPreface. Power Device Evolution and the Advert of IGBT. IGBT Fundamentals and Status Review. MOS Components of IGBT. Bipolar Components of IGBT. Physics and Modeling of IGBT. Latch-Up of Parasitic Thyristor in IGBT. Design Considerations of IGBT Unit Cell. IGBT Process Design and Fabrication Technology. Power IGBT Modules. Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies. IGBT Circuit Applications. Index.
£154.76
John Wiley & Sons Inc Electronic Properties of Engineering Materials
Book SynopsisJames Livingston has written a highly readable undergraduate text introducing the physics and chemistry underlying the electronic properties of engineering solids. The first half of the text uses a semi-classical approach, while the second half introduces quantum mechanics and applies quantum chemistry and quantum physics to the basic properties of metals, insulators, and semiconductors.Table of ContentsSEMI-CLASSICAL APPROACH. Conductors and Resistors. Windows, Doors, and Transparent Electrodes (Optical Properties of Conductors). Insulators and Capacitors. Lenses and Optical Fibers (Optical Properties of Insulators). Inductors, Electromagnets, and Permanent Magnets. Superconductors and Superconducting Magnets. Elasticity, Springs, and Sonic Waves. QUANTUM MECHANICAL APPROACH. Light Particles, Electron Waves, and Quantum Wells, and Springs. The Periodic Table, Atomic Spectra, and Neon Lights. The Game Is Bonds, Interatomic Bonds. From Bonds to Bands (and Why Grass Is Green). Free Electron Waves in Metals. Nearly-Free Electrons--Bands, Gaps, Holes, and Zones. Metals and Insulators. Semiconductors. LEDs, Photodetectors, Solar Cells, and Transistors. Suggestions for Further Reading. Index.
£230.36
John Wiley & Sons Inc Handbook of Chemicals and Gases for the
Book SynopsisThis book brings together the most useful and important data on chemicals and gases used in the manufacture of semiconductor devices. It offers an A-to-Z listing of physical properties and safety information for more than 270 chemicals and gases used in the manufacture of semiconductor chips.Table of ContentsThin Film Deposition Materials. Wafer Cleaning Chemicals. Photolithography Materials. Wet and Dry Etching Materials. Chemical Mechanical Planarizing Materials. Carrier Gases. Uncategorized Materials. Semiconductor Chemicals Analysis. Index.
£223.16
John Wiley & Sons Inc Physics and Technology of Semiconductor Devices
Book SynopsisProvides a comprehensive treatment of semiconductor device physics and technology, with emphasis on modern planar silicon devices. Physical principles are explained by the use of simple physical models and illustrated by experimental measurements.Table of ContentsThe Planar Technology. Solid-State Technology. Vapor-Phase Growth. Thermal Oxidation. Solid-State Diffusion. Semiconductors and Semiconductor Devices. Elements of Semiconductor Physics. Semiconductors under Non-Equilibrium Conditions. p-n Junction. Junction Transistor. Junction Field-Effect Transistors. Surface Effects and Surface-Controlled Devices. Theory of Semiconductor Surfaces. Surface Effects on p-n Junctions. Surface Field-Effect Transistors. Properties of the Silicon-Silicon Dioxide System.
£218.66
John Wiley & Sons Inc Properties of Advanced Semiconductor Materials
Book SynopsisContaining the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.Trade Review"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News, Vol. 25, No. 2 June 2001) "Anyone working with these materials will find the up-to-date information summarized in this handbook extremely useful and handy...this handbook has the potential to become on of the most cited reference books in upcoming years." (MRS Bulletin, September 2001)Table of ContentsContributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si_1-xGe_x) (F. Schäffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.
£125.96
John Wiley & Sons Inc Analysis and Design of Vertical Cavity Surface
Book SynopsisVertical Cavity Surface Emitting Lasers (VCSELs) are a type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge emitting semiconductor lasers. This book acts as a practical guide for the modeling of VCSELs. It provides derivations for understanding the operational principles of VCSELs.Trade Review"…very nicely organized…design engineers of VCSELs will find this book the most useful. However, it also provides valuable information to CAD tool designers…" (Optics & Photonics News, June 2005) “…the author’s assessment of the opportunities gives a strong incentive to develop such interest” (Robotica, Vol. 22, 2004)Table of ContentsPreface. Acknowledgments. 1. Vertical Cavity Surface Emitting Lasers - An overview. 2. Simple Design Consideration of Vertical Cavity Surface Emitting Lasers. 3. Modal Characteristics of Vertical Cavity Surface Emitting Lasers. 4. Polarization Properties of Vertical Cavity Surface Emitting Lasers. 5. Thermal Characteristics of Vertical Cavity Surface Emitting Lasers. 6. Electrical Characteristics of Vertical Cavity Surface Emitting Lasers. 7. Direct Modulation of Vertical Cavity Surface Emitting Lasers. 8. Spontaneous Emission of Vertical Cavity Surface Emitting Lasers. 9. Nonlinear Characteristics in Vertical Cavity Surface Emitting Lasers. Index.
£133.16
John Wiley & Sons Inc Silicon Germanium
Book SynopsisAn excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. -Ron Wilson, EETimes SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it. -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM''s SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM''s SiGe technology development programs * Explore IBM''s approach to deTrade Review"The text is recommended for engineering libraries serving electrical and computer engineering programs and engineers." (E-STREAMS, October 2004)Table of ContentsContributors. Foreword. Preface. Acknowledgments. Introduction. A Historical Perspective at IBM. Technology Development. Modeling and Characterization. Design Automation and Signal Integrity. Leading-Edge Applications. Appendix. Index. About the Authors.
£142.16
John Wiley & Sons Inc Semiconductor Sensors
Book SynopsisAn interdisciplinary work offering an introduction to the basic principles and operational characteristics of semiconductor sensors. Describes sensor technology, stressing bulk and surface micromachining. Considers a sensor group related to a special physical, chemical or biological input signal. The final chapter deals with integrated sensors.Table of ContentsClassification and Terminology of Sensors (S. Sze). Semiconductor Sensor Technologies (C. Mastrangelo & W. Tang). Acoustic Sensors (M. Motamedi & R. White). Mechanical Sensors (B. Kloeck & N. de Rooij). Magnetic Sensors (H. Baltes & R. Castagnetti). Radiation Sensors (S. Audet & J. Steigerwald). Thermal Sensors (S. Van Herwaarden & G. Meijer). Chemical Sensors (S. Morrison). Biosensors (A. Dewa & W. Ko). Integrated Sensors (K. Najafi, et al.). Appendices. Index.
£170.06
John Wiley & Sons Inc Semiconductor Material and Device
Book SynopsisThis Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures Trade Review“The book is well-illustrated and provides an ample bibliography.” (Optics & Photonics News, 4 November 2015) "I strongly recommend this book for those who want to learn device characterization." (IEEE Circuits & Devices Magazine, November/December 2006)Table of ContentsPreface to Third Edition xiii 1 Resistivity 1 1.1 Introduction, 1 1.2 Two-Point Versus Four-Point Probe, 2 1.2.1 Correction Factors, 8 1.2.2 Resistivity of Arbitrarily Shaped Samples, 14 1.2.3 Measurement Circuits, 18 1.2.4 Measurement Errors and Precautions, 18 1.3 Wafer Mapping, 21 1.3.1 Double Implant, 21 1.3.2 Modulated Photoreflectance, 23 1.3.3 Carrier Illumination (CI), 24 1.3.4 Optical Densitometry, 25 1.4 Resistivity Profiling, 25 1.4.1 Differential Hall Effect (DHE), 26 1.4.2 Spreading Resistance Profiling (SRP), 29 1.5 Contactless Methods, 34 1.5.1 Eddy Current, 34 1.6 Conductivity Type, 38 1.7 Strengths and Weaknesses, 40 Appendix 1.1 Resistivity as a Function of Doping Density, 41 Appendix 1.2 Intrinsic Carrier Density, 43 References, 44 Problems, 50 Review Questions, 59 2 Carrier and Doping Density 61 2.1 Introduction, 61 2.2 Capacitance-Voltage (C-V), 61 2.2.1 Differential Capacitance, 61 2.2.2 Band Offsets, 68 2.2.3 Maximum-Minimum MOS-C Capacitance, 71 2.2.4 Integral Capacitance, 75 2.2.5 Mercury Probe Contacts, 76 2.2.6 Electrochemical C–V Profiler (ECV), 77 2.3 Current-Voltage (I-V), 79 2.3.1 MOSFET Substrate Voltage—Gate Voltage, 79 2.3.2 MOSFET Threshold Voltage, 81 2.3.3 Spreading Resistance, 82 2.4 Measurement Errors and Precautions, 82 2.4.1 Debye Length and Voltage Breakdown, 82 2.4.2 Series Resistance, 83 2.4.3 Minority Carriers and Interface Traps, 89 2.4.4 Diode Edge and Stray Capacitance, 90 2.4.5 Excess Leakage Current, 91 2.4.6 Deep Level Dopants/Traps, 91 2.4.7 Semi-Insulating Substrates, 93 2.4.8 Instrumental Limitations, 94 2.5 Hall Effect, 94 2.6 Optical Techniques, 97 2.6.1 Plasma Resonance, 97 2.6.2 Free Carrier Absorption, 98 2.6.3 Infrared Spectroscopy, 99 2.6.4 Photoluminescence (PL), 101 2.7 Secondary Ion Mass Spectrometry (SIMS), 102 2.8 Rutherford Backscattering (RBS), 103 2.9 Lateral Profiling, 104 2.10 Strengths and Weaknesses, 105 Appendix 2.1 Parallel or Series Connection?, 107 Appendix 2.2 Circuit Conversion, 108 References, 109 Problems, 117 Review Questions, 124 3 Contact Resistance and Schottky Barriers 127 3.1 Introduction, 127 3.2 Metal-Semiconductor Contacts, 128 3.3 Contact Resistance, 131 3.4 Measurement Techniques, 135 3.4.1 Two-Contact Two-Terminal Method, 135 3.4.2 Multiple-Contact Two-Terminal Methods, 138 3.4.3 Four-Terminal Contact Resistance Method, 149 3.4.4 Six-Terminal Contact Resistance Method, 156 3.4.5 Non-Planar Contacts, 156 3.5 Schottky Barrier Height, 157 3.5.1 Current-Voltage, 158 3.5.2 Current—Temperature, 160 3.5.3 Capacitance-Voltage, 161 3.5.4 Photocurrent, 162 3.5.5 Ballistic Electron Emission Microscopy (BEEM), 163 3.6 Comparison of Methods, 163 3.7 Strengths and Weaknesses, 164 Appendix 3.1 Effect of Parasitic Resistance, 165 Appendix 3.2 Alloys for Contacts to Semiconductors, 167 References, 168 Problems, 174 Review Questions, 184 4 Series Resistance, Channel Length and Width, and Threshold Voltage 185 4.1 Introduction, 185 4.2 PN Junction Diodes, 185 4.2.1 Current-Voltage, 185 4.2.2 Open-Circuit Voltage Decay (OCVD), 188 4.2.3 Capacitance-Voltage (C–V ), 190 4.3 Schottky Barrier Diodes, 190 4.3.1 Series Resistance, 190 4.4 Solar Cells, 192 4.4.1 Series Resistance—Multiple Light Intensities, 195 4.4.2 Series Resistance—Constant Light Intensity, 196 4.4.3 Shunt Resistance, 197 4.5 Bipolar Junction Transistors, 198 4.5.1 Emitter Resistance, 200 4.5.2 Collector Resistance, 202 4.5.3 Base Resistance, 202 4.6 MOSFETS, 206 4.6.1 Series Resistance and Channel Length–Current-Voltage, 206 4.6.2 Channel Length—Capacitance-Voltage, 216 4.6.3 Channel Width, 218 4.7 MESFETS and MODFETS, 219 4.8 Threshold Voltage, 222 4.8.1 Linear Extrapolation, 223 4.8.2 Constant Drain Current, 225 4.8.3 Sub-threshold Drain Current, 226 4.8.4 Transconductance, 227 4.8.5 Transconductance Derivative, 228 4.8.6 Drain Current Ratio, 228 4.9 Pseudo MOSFET, 230 4.10 Strengths and Weaknesses, 231 Appendix 4.1 Schottky Diode Current-Voltage Equation, 231 References, 232 Problems, 238 Review Questions, 250 5 Defects 251 5.1 Introduction, 251 5.2 Generation-Recombination Statistics, 253 5.2.1 A Pictorial View, 253 5.2.2 A Mathematical Description, 255 5.3 Capacitance Measurements, 258 5.3.1 Steady-State Measurements, 259 5.3.2 Transient Measurements, 259 5.4 Current Measurements, 267 5.5 Charge Measurements, 269 5.6 Deep-Level Transient Spectroscopy (DLTS), 270 5.6.1 Conventional DLTS, 270 5.6.2 Interface Trapped Charge DLTS, 280 5.6.3 Optical and Scanning DLTS, 283 5.6.4 Precautions, 285 5.7 Thermally Stimulated Capacitance and Current, 288 5.8 Positron Annihilation Spectroscopy (PAS), 289 5.9 Strengths and Weaknesses, 292 Appendix 5.1 Activation Energy and Capture Cross-Section, 293 Appendix 5.2 Time Constant Extraction, 294 Appendix 5.3 Si and GaAs Data, 296 References, 301 Problems, 308 Review Questions, 316 6 Oxide and Interface Trapped Charges, Oxide Thickness 319 6.1 Introduction, 319 6.2 Fixed, Oxide Trapped, and Mobile Oxide Charge, 321 6.2.1 Capacitance-Voltage Curves, 321 6.2.2 Flatband Voltage, 327 6.2.3 Capacitance Measurements, 331 6.2.4 Fixed Charge, 334 6.2.5 Gate-Semiconductor Work Function Difference, 335 6.2.6 Oxide Trapped Charge, 338 6.2.7 Mobile Charge, 338 6.3 Interface Trapped Charge, 342 6.3.1 Low Frequency (Quasi-static) Methods, 342 6.3.2 Conductance, 347 6.3.3 High Frequency Methods, 350 6.3.4 Charge Pumping, 352 6.3.5 MOSFET Sub-threshold Current, 359 6.3.6 DC-IV, 361 6.3.7 Other Methods, 363 CONTENTS ix 6.4 Oxide Thickness, 364 6.4.1 Capacitance-Voltage, 364 6.4.2 Current-Voltage, 369 6.4.3 Other Methods, 369 6.5 Strengths and Weaknesses, 369 Appendix 6.1 Capacitance Measurement Techniques, 371 Appendix 6.2 Effect of Chuck Capacitance and Leakage Current, 372 References, 374 Problems, 381 Review Questions, 387 7 Carrier Lifetimes 389 7.1 Introduction, 389 7.2 Recombination Lifetime/Surface Recombination Velocity, 390 7.3 Generation Lifetime/Surface Generation Velocity, 394 7.4 Recombination Lifetime—Optical Measurements, 395 7.4.1 Photoconductance Decay (PCD), 399 7.4.2 Quasi-Steady-State Photoconductance (QSSPC), 402 7.4.3 Short-Circuit Current/Open-Circuit Voltage Decay (SCCD/OCVD), 402 7.4.4 Photoluminescence Decay (PLD), 404 7.4.5 Surface Photovoltage (SPV), 404 7.4.6 Steady-State Short-Circuit Current (SSSCC), 411 7.4.7 Free Carrier Absorption, 413 7.4.8 Electron Beam Induced Current (EBIC), 416 7.5 Recombination Lifetime—Electrical Measurements, 417 7.5.1 Diode Current-Voltage, 417 7.5.2 Reverse Recovery (RR), 420 7.5.3 Open-Circuit Voltage Decay (OCVD), 422 7.5.4 Pulsed MOS Capacitor, 424 7.5.5 Other Techniques, 428 7.6 Generation Lifetime—Electrical Measurements, 429 7.6.1 Gate-Controlled Diode, 429 7.6.2 Pulsed MOS Capacitor, 432 7.7 Strengths and Weaknesses, 440 Appendix 7.1 Optical Excitation, 441 Appendix 7.2 Electrical Excitation, 448 References, 448 Problems, 458 Review Questions, 464 8 Mobility 465 8.1 Introduction, 465 8.2 Conductivity Mobility, 465 8.3 Hall Effect and Mobility, 466 8.3.1 Basic Equations for Uniform Layers or Wafers, 466 8.3.2 Non-uniform Layers, 471 8.3.3 Multi Layers, 474 8.3.4 Sample Shapes and Measurement Circuits, 475 8.4 Magnetoresistance Mobility, 479 8.5 Time-of-Flight Drift Mobility, 482 8.6 MOSFET Mobility, 489 8.6.1 Effective Mobility, 489 8.6.2 Field-Effect Mobility, 500 8.6.3 Saturation Mobility, 502 8.7 Contactless Mobility, 502 8.8 Strengths and Weaknesses, 502 Appendix 8.1 Semiconductor Bulk Mobilities, 503 Appendix 8.2 Semiconductor Surface Mobilities, 506 Appendix 8.3 Effect of Channel Frequency Response, 506 Appendix 8.4 Effect of Interface Trapped Charge, 507 References, 508 Problems, 514 Review Questions, 521 9 Charge-based and Probe Characterization 523 9.1 Introduction, 523 9.2 Background, 524 9.3 Surface Charging, 525 9.4 The Kelvin Probe, 526 9.5 Applications, 533 9.5.1 Surface Photovoltage (SPV), 533 9.5.2 Carrier Lifetimes, 534 9.5.3 Surface Modification, 537 9.5.4 Near-Surface Doping Density, 538 9.5.5 Oxide Charge, 538 9.5.6 Oxide Thickness and Interface Trap Density, 540 9.5.7 Oxide Leakage Current, 541 9.6 Scanning Probe Microscopy (SPM), 542 9.6.1 Scanning Tunneling Microscopy (STM), 543 9.6.2 Atomic Force Microscopy (AFM), 544 9.6.3 Scanning Capacitance Microscopy (SCM), 547 9.6.4 Scanning Kelvin Probe Microscopy (SKPM), 550 9.6.5 Scanning Spreading Resistance Microscopy (SSRM), 553 9.6.6 Ballistic Electron Emission Microscopy (BEEM), 554 9.7 Strengths and Weaknesses, 556 References, 556 Problems, 560 Review Questions, 561 10 Optical Characterization 563 10.1 Introduction, 563 10.2 Optical Microscopy, 564 10.2.1 Resolution, Magnification, Contrast, 565 10.2.2 Dark-Field, Phase, and Interference Contrast Microscopy, 568 10.2.3 Confocal Optical Microscopy, 570 10.2.4 Interferometric Microscopy, 572 10.2.5 Defect Etches, 575 10.2.6 Near-Field Optical Microscopy (NFOM), 575 10.3 Ellipsometry, 579 10.3.1 Theory, 579 10.3.2 Null Ellipsometry, 581 10.3.3 Rotating Analyzer Ellipsometry, 582 10.3.4 Spectroscopic Ellipsometry (SE), 583 10.3.5 Applications, 584 10.4 Transmission, 585 10.4.1 Theory, 585 10.4.2 Instrumentation, 587 10.4.3 Applications, 590 10.5 Reflection, 592 10.5.1 Theory, 592 10.5.2 Applications, 594 10.5.3 Internal Reflection Infrared Spectroscopy, 598 10.6 Light Scattering, 599 10.7 Modulation Spectroscopy, 600 10.8 Line Width, 601 10.8.1 Optical-Physical Methods, 601 10.8.2 Electrical Methods, 603 10.9 Photoluminescence (PL), 604 10.10 Raman Spectroscopy, 608 10.11 Strengths and Weaknesses, 610 Appendix 10.1 Transmission Equations, 611 Appendix 10.2 Absorption Coefficients and Refractive Indices for Selected Semiconductors, 613 References, 615 Problems, 621 Review Questions, 626 11 Chemical and Physical Characterization 627 11.1 Introduction, 627 11.2 Electron Beam Techniques, 628 11.2.1 Scanning Electron Microscopy (SEM), 629 11.2.2 Auger Electron Spectroscopy (AES), 634 11.2.3 Electron Microprobe (EMP), 639 11.2.4 Transmission Electron Microscopy (TEM), 645 11.2.5 Electron Beam Induced Current (EBIC), 649 11.2.6 Cathodoluminescence (CL), 651 11.2.7 Low-Energy, High-Energy Electron Diffraction (LEED), 652 11.3 Ion Beam Techniques, 653 11.3.1 Secondary Ion Mass Spectrometry (SIMS), 654 11.3.2 Rutherford Backscattering Spectrometry (RBS), 659 11.4 X-Ray and Gamma-Ray Techniques, 665 11.4.1 X-Ray Fluorescence (XRF), 666 11.4.2 X-Ray Photoelectron Spectroscopy (XPS), 668 11.4.3 X-Ray Topography (XRT), 671 11.4.4 Neutron Activation Analysis (NAA), 674 11.5 Strengths and Weaknesses, 676 Appendix 11.1 Selected Features of Some Analytical Techniques, 678 References, 678 Problems, 686 Review Questions, 687 12 Reliability and Failure Analysis 689 12.1 Introduction, 689 12.2 Failure Times and Acceleration Factors, 690 12.2.1 Failure Times, 690 12.2.2 Acceleration Factors, 690 12.3 Distribution Functions, 692 12.4 Reliability Concerns, 695 12.4.1 Electromigration (EM), 695 12.4.2 Hot Carriers, 701 12.4.3 Gate Oxide Integrity (GOI), 704 12.4.4 Negative Bias Temperature Instability (NBTI), 711 12.4.5 Stress Induced Leakage Current (SILC), 712 12.4.6 Electrostatic Discharge (ESD), 712 12.5 Failure Analysis Characterization Techniques, 713 12.5.1 Quiescent Drain Current (IDDQ), 713 12.5.2 Mechanical Probes, 715 12.5.3 Emission Microscopy (EMMI), 715 12.5.4 Fluorescent Microthermography (FMT), 718 12.5.5 Infrared Thermography (IRT), 718 12.5.6 Voltage Contrast, 718 12.5.7 Laser Voltage Probe (LVP), 719 12.5.8 Liquid Crystals (LC), 720 12.5.9 Optical Beam Induced Resistance Change (OBIRCH), 721 12.5.10 Focused Ion Beam (FIB), 723 12.5.11 Noise, 723 12.6 Strengths and Weaknesses, 726 Appendix 12.1 Gate Currents, 728 References, 730 Problems, 737 Review Questions, 740 Appendix 1 List of Symbols 741 Appendix 2 Abbreviations and Acronyms 749 Index 755
£159.26
John Wiley & Sons Inc Failure Mechanisms in Semiconductor Devices
Book SynopsisFailure Mechanisms in Semiconductor Devices Second Edition E. Ajith Amerasekera Texas Instruments Inc., Dallas, USA Farid N. Najm University of Illinois at Urbana-Champaign, USA Since the successful first edition of Failure Mechanisms in Semiconductor Devices, semiconductor technology has become increasingly important. The high complexity of today''s integrated circuits has engendered a demand for greater component reliability. Reflecting the need for guaranteed performance in consumer applications, this thoroughly updated edition includes more detailed material on reliability modelling and prediction. The book analyses the main failure mechanisms in terms of cause, effects and prevention and explains the mathematics behind reliability analysis. The authors detail methodologies for the identification of failures and describe the approaches for building reliability into semiconductor devices. Their thorough yet accessible text covers the physics of failure mechanisms from the semiconducTable of ContentsReliability Mathematics. Principal Failure Mechanisms. Failure Mechanisms in Technologies and Circuits. Reliability Testing. Reliability Prediction. Screening. Failure Analysis. Quality Assurance. Appendix. Indexes.
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John Wiley & Sons Inc Chemical Beam Epitaxy and Related Techniques
Book SynopsisChemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.Table of ContentsChemical Beam Epitaxy: An Introduction (G. Davies, et al.). Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol). Precursors for Chemical Beam Epitaxy (D. Bohling). Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord). Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy). CBE InP-Based Materials and Devices (W. Tsang & T. Chiu). MOMBE of Antiminides and Growth Model (H. Asahi). Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa). Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki). Gas Source Molecular Beam Epitaxy (L. Goldstein). Dopants and Dopant Incorporation (T. Whitaker & T. Martin). Selected Area Epitaxy (H. Heinecke & G. Davies). Chemical Beam Etching (W. Tsang & T. Chiu). Laser-Assisted Epitaxy (H. Sugiura). Index.
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John Wiley & Sons Inc Microprocessor Architectures From VLIW to TTA
Book SynopsisThe market for single chip microprocessors is huge and their performance continues to increase, driven by the on-going demand for more powerful applications, particularly in the control and signal processing domains.Table of ContentsARCHITECTURES: OVERVIEW AND COMPLEXITY. Problem Statement. Trends in Computer Architecture. Bus Complexity. Complexity of Instruction Level Parallel Processors. TRANSPORT TRIGGERING CONCEPT. From VLIW to TTA. An Example Transport Triggered Processor. THE DESIGN SPACE OF TRANSPORT TRIGGERED ARCHITECTURES. Transport Design Space. Function Unit Design Space. Register Unit Design Space. Exception Support. ARCHITECTURE EVALUATION AND SYNTHESIS. Evaluation of Architecture Parameters. Automatic Synthesis of Transport Triggered Processors. Summary and Perspective. Appendices. Glossary. References. Index.
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John Wiley & Sons Inc Quantum Dot Heterostructures
Book SynopsisThis book presents a comprehensive overview of the most recent advances in the field, including the way such structures are grown, how experiments on the structures have clarified long-standing theoretical predictions, how the structures are characterized, and the performance of devices developed from the structures.Trade Review"It covers the way structures are grown, how they are characterized..." (La Doc Sti, Vol. 369, January 1999)Table of ContentsFabrication Techniques for Quantum Dots. Self-Organization Concepts on Crystal Surfaces. Growth and Structural Characterization of Self-Organized Quantum Dots. Modeling of Ideal and Real Quantum Dots. Electronic and Optical Properties. Electrical Properties. Photonic Devices. References. Index.
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Wiley Integrated Circuit Failure Analysis
Book SynopsisFault analysis of highly-integrated semiconductor circuits has become an indispensable discipline in the optimization of product quality. Integrated Circuit Failure Analysis describes state-of-the-art procedures for exposing suspected failure sites in semiconductor devices. The author adopts a hands-on problem-oriented approach, founded on many years of practical experience, complemented by the explanation of basic theoretical principles. Features include: Advanced methods in device preparation and technical procedures for package inspection and semiconductor reliability. Illustration of chip isolation and step-by-step delayering of chips by wet chemical and modern plasma dry etching techniques. Particular analysis of bipolar and MOS circuits, although techniques are equally relevant to other semiconductors. Advice on the choice of suitable laboratory equipment. Numerous photographs and drawings providing guidance for checking results. Focusing on modern techniques, this practical textTable of ContentsPurpose and Importance of Preparatory Semiconductor Analysis. Opening the Package: Chip Insulation. Wet Chemical Etching Procedures for Removing Layers of the ChipStructure. Crystallographic Etching in the Silicon. Dry Etching in the Plasma. Microsectioning Technology, Metallography. Outlook. Appendices. Index.
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John Wiley & Sons Inc Power Semiconductor Devices Theory and
Book SynopsisA growing need for the application of power semiconductor devices in robotics and automation systems has arisen over the 1990s. This text gives the power semiconductor device user an understanding of the structures, function, characteristics and features of power semiconductor devices.Table of ContentsProperties of Semiconductors. Elementary Semiconductor Structures. Devices, Fabrication and Their Modelling. Power Semiconductor Device Applications. Power Diodes. Bipolar Junction Transistors. Thyristors: Basic Operating Principles. Thyristor Types and Applications. Static Induction Power Devices. Power MOSFETs. Power Bipolar-MOS (BIPMOS) Devices. Power Modules and Integrated Structures. Conditions for Reliable Operation. Future Materials and Devices. Appendix.
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John Wiley & Sons Inc Advanced Theory of Semiconductor Devices
Book SynopsisSemiconductor devices are ubiquitous in todaya s world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design.Table of ContentsPreface. Acknowledgments. A Brief Review of the Basic Equations. The Symmetry of the Crystal Lattice. The Theory of Energy Bands in Crystals. Imperfections of Ideal Crystal Structure. Equilibrium Statistics for Electrons and Holes. Self-Consistent Potentials and Dielectric Properties. Scattering Theory. The Boltzmann Transport Equation. Generation-Recombination. The Heterojunction Barrier. The Device Equations of Shockley and Stratton. Numerical Device Simulations. Diodes. Laser Diodes. Transistors. Future Semiconductor Devices. Appendix A: Tunneling and the Golden Rule. Appendix B: The One Band Approximation. Appendix C: Temperature Dependence of the Band Structure. Appendix D: Hall Effect and Magnetoresistance. Appendix E: The Power Balance Equation. Appendix F: The Self-Consistent Potential at a Heterojunction. Appendix G: Schottky Barrier Transport. Index. About the Author.
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John Wiley & Sons Optical Communication Receiver Design
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John Wiley & Sons Inc Metal Chalcogenide Nanostructures for Renewable
Book SynopsisThe first book written on this important topic, Metal Chalcogenide Semiconductor Nanostructures and Their Applications in Renewable Energy provides an in-depth examination of the properties and synthesis of a class of nanomaterials essential to renewable energy manufacturing.Table of ContentsPreface xiii Part 1: Renewable Energy Conversion Systems 1 1 Introduction: An Overview of Metal Chalcogenide Nanostructures for Renewable Energy Applications 3 Ahsanulhaq Qurashi 1.1 Introduction 3 1.2 Metal Chalcogenide Nanostructures 7 1.3 Growth of Metal Chalcogenide Nanostructures 8 1.4 Applications of Metal Chalcogenide Nanostructures 16 1.5 Summary and Future Perspective 18 References 18 2 Renewable Energy and Materials 23 Muhammad Asif 2.1 Global Energy Scenario 23 2.2 Role of Renewable Energy in Sustainable Energy Future 25 2.3 Importance of Materials Role in Renewable Energy 27 References 30 3 Sustainable Feed Stock and Energy Futures 33 H. Idriss 3.1 Introduction 33 3.2 Discussion 34 References 41 Part 2: Synthesis of Metal Chalcogenide Nanostructures 43 4 Metal-Selenide Nanostructures: Growth and Properties 45 Ramin Yousefi 4.1 Introduction 45 4.2 Growth and Properties of Different Groups of Metal-Selenide Nanostructures 48 4.3 Metal Selenides from III?VI Semiconductors 57 4.4 Metal Selenides from IV?VI Semiconductors 61 4.5 Metal Selenides from V?VI Semiconductors 66 4.6 Metal Selenides from Transition Metal (TM) 69 4.7 Ternary Metal-Selenide Compounds 75 4.8 Summary and Future Outlook 78 Acknowledgment 79 References 79 5 Growth Mechanism and Surface Functionalization of Metal Chalcogenides Nanostructures 83 Muhammad Nawaz Tahir, Jugal Kishore Sahoo, Faegheh Hoshyargar, and Wolfgang Tremel 5.1 Introduction 84 5.2 Synthetic Methods for Layered Metal Chalcogenides 89 5.3 Surface Functionalization of Layered Metal Dichalcogenide Nanostructures 102 5.4 Applications of Inorganic Nanotubes and Fullerenes 110 References 113 6 Optical and Structural Properties of Metal Chalcogenide Semiconductor Nanostructures 123 Ihsan-ul-Haq Toor and Shafique Khan 6.1 Optical Properties of Metal Chalcogenides Semiconductor Nanostructures 124 6.2 Structural Properties and Defects of Metal Chalcogenide Semiconductor Nanostructures 133 References 142 7 Structural and Optical Properties of CdS Nanostructures 147 Y. Al-Douri, Abdulwahab S. Z. Lahewil, U. Hashim, and N. M. Ahmed 7.1 Introduction 147 7.2 Nanomaterials 150 7.3 II-VI Semiconductors 152 7.4 Sol-Gel Process 155 7.5 Structural and Surface Characterization of Nanostructured CdS 156 7.6 Optical Properties 159 7.7 Conclusion 161 Acknowledgments 162 References 162 Part 3: Applications of Metal Chalcogenides Nanostructures 165 8 Metal Sulfide Photocatalysts for Hydrogen Generation by Water Splitting under Illumination of Solar Light 167 Dr. Zhonghai Zhang 8.1 Introduction 167 8.2 Photocatalytic Water Splitting on Single Metal Sulfide 169 8.3 Photocatalytic Water Splitting on Multi-metal Sulfide 173 8.4 Metal Sulfides Solid-Solution Photocatalysts 180 8.5 Summary and Future Outlook 184 References 184 9 Metal Chalcogenide Hierarchical Nanostructures for Energy Conversion Devices 189 Ramin Yousefi, Farid Jamali-Sheini, and Ali Khorsand Zak 9.1 Introduction 190 9.2 Main Characteristics of Cd-Chalcogenide Nanocrystals (CdE; E = S, Se, Te) 192 9.3 Different Methods to Grow Cd-Chalcogenide Nanocrystals 192 9.4 Solar Energy Conversion 212 9.5 Cd-Chalcogenide Nanocrystals as Solar Energy Conversion 219 9.6 Summary and Future Outlook 230 References 230 10 Metal Chalcogenide Quantum Dots for Hybrid Solar Cell Applications 233 Mir Waqas Alam and Ahsanulhaq Qurashi 10.1 Introduction 233 10.2 Chemical Synthesis of Quantum Dots 235 10.3 Quantum Dots Solar cell 238 10.4 Summary and Future Prospects 243 References 243 11 Solar Cell Application of Metal Chalcogenide Semiconductor Nanostructures 247 Hongjun Wu 11.1 Introduction 247 11.2 Chalcogenide-Based Thin-Film Solar Cells 248 11.3 CdTe-Based Solar Cells 249 11.4 Cu(In,Ga)(S,Se)2 (CIGS)-Based Solar Cells 251 11.5 Metal Chalcogenides-Based Quantum-Dots-Sensitized Solar Cells (QDSSCs) 253 11.6 Hybrid Metal Chalcogenides Nanostructure-Conductive Polymer Composite Solar Cells 257 11.7 Conclusions 261 References 262 12 Chalcogenide-Based Nanodevices for Renewable Energy 269 Y. Al-Douri 12.1 Introduction 269 12.2 Renewable Energy 272 12.3 Nanodevices 274 12.4 Density Functional Theory 277 12.5 Analytical Studies 278 12.6 Conclusion 284 Acknowledgments 285 References 285 13 Metal Tellurides Nanostructures for Thermoelectric Applications 289 Salman B. Inayat 13.1 Introduction 290 13.2 Thermoelectric Microdevice Fabricated by a MEMS-Like Electrochemical Process 290 13.3 Bi2Te3-Based Flexible Micro Thermoelectric Generator 292 13.4 High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys 293 13.5 Nano-manufactured Thermoelectric Glass Windows for Energy Efficient Building Technologies 294 13.6 Conclusion 296 References 297
£157.45
John Wiley & Sons Inc Physical Chemistry of Semiconductor Materials and
Book SynopsisThe development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live.Table of ContentsPreface ix 1. Thermodynamics of Homogeneous and Heterogeneous Semiconductor Systems 1 1.1 Introduction 1 1.2 Basic Principles 2 1.3 Phases and Their Properties 7 1.3.1 Structural Order of a Phase 7 1.4 Equations of State of Thermodynamic Systems 11 1.4.1 Thermodynamic Transformations and Functions of State 11 1.4.2 Work Associated with a Transformation, Entropy and Free Energy 12 1.4.3 Chemical Potentials 14 1.4.4 Free Energy and Entropy of Spontaneous Processes 15 1.4.5 Effect of Pressure on Phase Transformations, Polymorphs/Polytypes Formation and Their Thermodynamic Stability 16 1.4.6 Electrochemical Equilibria and Electrochemical Potentials of Charged Species 21 1.5 Equilibrium Conditions of Multicomponent Systems Which Do Not React Chemically 23 1.6 Thermodynamic Modelling of Binary Phase Diagrams 28 1.6.1 Introductory Remarks 28 1.6.2 Thermodynamic Modelling of Complete and Incomplete Miscibility 29 1.6.3 Thermodynamic Modelling of Intermediate Compound Formation 40 1.6.4 Retrograde Solubility, Retrograde Melting and Spinodal Decomposition 40 1.7 Solution Thermodynamics and Structural and Physical Properties of Selected Semiconductor Systems 43 1.7.1 Introductory Remarks 43 1.7.2 Au-Ag and Au-Cu Alloys 45 1.7.3 Silicon and Germanium 49 1.7.4 Silicon-Germanium Alloys 53 1.7.5 Silicon- and Germanium-Binary Alloys with Group III and Group IV Elements 55 1.7.6 Silicon-Tin and Germanium-Tin Alloys 61 1.7.7 Carbon and Its Polymorphs 62 1.7.8 Silicon Carbide 67 1.7.9 Selenium-Tellurium Alloys 69 1.7.10 Binary and Pseudo-binary Selenides and Tellurides 71 1.7.11 Arsenides, Phosphides and Nitrides 81 1.8 Size-Dependent Properties, Quantum Size Effects and Thermodynamics of Nanomaterials 93 Appendix 98 Use of Electrochemical Measurements for the Determination of the Thermodynamic Functions of Semiconductors 98 References 103 2. Point Defects in Semiconductors 117 2.1 Introduction 117 2.2 Point Defects in Ionic Solids: Modelling the Electrical Conductivity of Ionic Solids by Point Defects-Mediated Charge Transfer 119 2.3 Point Defects and Impurities in Elemental Semiconductors 127 2.3.1 Introduction 127 2.3.2 Vacancies and Self-Interstitials in Semiconductors with the Diamond Structure: an Attempt at a Critical Discussion of Their Thermodynamic and Transport Properties 129 2.3.3 Effect of Defect–Defect Interactions on Diffusivity: Trap-and-Pairing Limited Diffusion Processes 145 2.3.4 Light Impurities in Group IV Semiconductors: Hydrogen, Carbon, Nitrogen, Oxygen and Their Reactivity 153 2.4 Defects and Non-Stoichiometry in Compound Semiconductors 167 2.4.1 Structural and Thermodynamic Properties 167 2.4.2 Defect Identification in Compound Semiconductors 171 2.4.3 Non-Stoichiometry in Compound Semiconductors 171 References 181 3. Extended Defects in Semiconductors and Their Interactions with Point Defects and Impurities 195 3.1 Introduction 195 3.2 Dislocations in Semiconductors with the Diamond Structure 196 3.2.1 Geometrical Properties 196 3.2.2 Energy of Regular Straight Dislocations 201 3.2.3 Dislocation Motion 203 3.2.4 Dislocation Reconstruction 205 3.2.5 Electronic Structure of Dislocations in Si and Ge, Theoretical Studies and Experimental Evidences 208 3.3 Dislocations in Compound Semiconductors 215 3.3.1 Electronic Structure of Dislocations in Compound Semiconductors 216 3.4 Interaction of Defects and Impurities with Extended Defects 219 3.4.1 Introduction 219 3.4.2 Thermodynamics of Defect Interactions with Extended Defects 220 3.4.3 Thermodynamics of Interaction of Neutral Defects and Impurities with EDs 221 3.4.4 Kinetics of Interaction of Point Defects, Impurities and Extended Defects: General Concepts 228 3.4.5 Kinetics of Interaction Reactions: Reaction Limited Processes 230 3.4.6 Kinetics of Interaction Reactions: Diffusion-Limited Reactions 230 3.5 Interaction of Atomic Defects with Extended Defects: Theoretical and Experimental Evidence 232 3.5.1 Interaction of Point Defects with Extended Defects 232 3.5.2 Hydrogen-Dislocation Interaction in Silicon 233 3.5.3 Interaction of Oxygen with Dislocations 235 3.6 Segregation of Impurities at Surfaces and Interfaces 236 3.6.1 Introduction 236 3.6.2 Grain Boundaries in Polycrystalline Semiconductors 236 3.6.3 Structure of Grain Boundaries and Their Physical Properties 239 3.6.4 Segregation of Impurities at Grain Boundaries and Their Influence on Physical Properties 241 3.7 3D Defects: Precipitates, Bubbles and Voids 243 3.7.1 Thermodynamic and Structural Considerations 243 3.7.2 Oxygen and Carbon Segregation in Silicon 246 3.7.3 Silicides Precipitation 249 3.7.4 Bubbles and Voids 249 References 251 4. Growth of Semiconductor Materials 265 4.1 Introduction 265 4.2 Growth of Bulk Solids by Liquid Crystallization 266 4.2.1 Growth of Single Crystal and Multicrystalline Ingots by Liquid Phase Crystallization 268 4.2.2 Growth of Single Crystals or Multicrystalline Materials by Liquid Crystallization Processes: Impact of Environmental Interactions on the Chemical Quality 274 4.2.3 Growth of Bulk Solids by Liquid Crystallization Processes: Solubility of Impurities in Semiconductors and Their Segregation 287 4.2.4 Growth of Bulk Solids by Liquid Crystallization Processes: Pick-Up of Impurities 290 4.2.5 Constitutional Supercooling 295 4.2.6 Growth Dependence of the Impurity Pick-Up and Concentration Profiling 298 4.2.7 Purification of Silicon by Smelting with Al 299 4.3 Growth of Ge-Si Alloys, SiC, GaN, GaAs, InP and CdZnTe from the Liquid Phase 300 4.3.1 Growth of Si-Ge Alloys 301 4.3.2 Growth of SiC from the Liquid Phase 303 4.3.3 Growth of GaN from the Liquid Phase 304 4.3.4 Growth of GaAs, InP, ZnSe and CdZnTe 309 4.4 Single Crystal Growth from the Vapour Phase 318 4.4.1 Generalities 318 4.4.2 Growth of Silicon, ZnSe and Silicon Carbide from the Vapour Phase 319 4.4.3 Epitaxial Growth of Single Crystalline Layers of Elemental and Compound Semiconductors 323 4.5 Growth of Poly/Micro/Nano-Crystalline Thin Film Materials 332 4.5.1 Introduction 332 4.5.2 Growth of Nanocrystalline/Microcrystalline Silicon 334 4.5.3 Growth of Silicon Nanowires 337 4.5.4 Growth of Films of CdTe and of Copper Indium (Gallium) Selenide (CIGS) 342 References 345 5. Physical Chemistry of Semiconductor Materials Processing 363 5.1 Introduction 363 5.2 Thermal Annealing Processes 364 5.2.1 Thermal Decomposition of Non-stoichiometric Amorphous Phases for Nanofabrication Processes 367 5.2.2 Other Problems of a Thermodynamic or Kinetic Nature 369 5.3 Hydrogen Passivation Processes 372 5.4 Gettering and Defect Engineering 376 5.4.1 Introduction 376 5.4.2 Thermodynamics of Gettering 377 5.4.3 Physics and Chemistry of Internal Gettering 378 5.4.4 Physics and Chemistry of External Gettering 382 5.5 Wafer Bonding 390 References 391 Index 399
£64.55
John Wiley & Sons Inc Organic Semiconductors for Optoelectronics
Book SynopsisComprehensive coverage of organic electronics, including fundamental theory, basic properties, characterization methods, device physics, and future trends Organic semiconductor materials have vast commercial potential for a wide range of applications, from self-emitting OLED displays and solid-state lighting to plastic electronics and organic solar cells. As research in organic optoelectronic devices continues to expand at an unprecedented rate, organic semiconductors are being applied to flexible displays, biosensors, and other cost-effective green devices in ways not possible with conventional inorganic semiconductors. Organic Semiconductors for Optoelectronics is an up-to-date review of the both the fundamental theory and latest research and development advances in organic semiconductors. Featuring contributions from an international team of experts, this comprehensive volume covers basic properties of organic semiconductors, characterization techniques, device physics, and futurTable of ContentsPreface – to be supplied by H.Naito 1 Electronic Structures of Organic Semiconductors Kazuyoshi Tanaka 2 Charge carrier transport Hiroyoshi Naito 3 Theory of Optical Properties of Organic Semiconductors Jai Singh, Monishka Rita Narayan and David Ompong 4 Light absorption and emission properties of organic semiconductors Takashi Kobayashi, Takashi Nagase, and Hiroyoshi Naito 5 Photoluminescence Spectroscopy Hiroyoshi Naito 6 Time-of-flight method for determining the drift mobility in organic semiconductors Masahiro Funahashi 7 Microwave and Terahertz Spectroscopy Akinori Saeki 8 Intrinsic and extrinsic transport in crystalline organic semiconductors: electron-spin-resonance study for characterization of localized states. A. S. Mishchenko 9 Second Harmonic Generation Spectroscopy Takaaki Manaka and Mitsumasa Iwamoto 10 Device Physics of organic field-effect transistors Hiroyuki Matsui 11 Spontaneous orientation polarization in organic light-emitting diodes and its influence on charge injection, accumulation, and degradation properties Yutaka Noguchi, Hisao Ishii, Lars Jäger, Tobias D. Schmidt, Wolfgang Brütting 12 Advanced molecular design for organic light emitting diode emitters based on horizontal molecular orientation and thermally activated delayed fluorescence Li Zhao, DaeHyeon Kim, Jean-Charles Ribierre, Takeshi Komino and Chihaya Adachi 13 Organic field effect transistors integrated circuits Mayumi Uno 14 Naphthobisthiadiazole-based semiconducting polymers for high-efficiency organic photovoltaics Itaru Osaka and Kazuo Takimiya 15 Plasmonics for light-emitting and photovoltaic devices Koichi Okamoto
£138.56
John Wiley & Sons Inc Amorphous Oxide Semiconductors
Book SynopsisAMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status ofand latest developments intransparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semicondTable of ContentsPreface xv Series Editor’s Foreword xvii About the Editors xviii List of Contributors xix Part I Introduction 1 1.1 Transparent Amorphous Oxide Semiconductors for Display Applications 3Hideo Hosono 1.1.1 Introduction to Amorphous Semiconductors as Thin-Film Transistor (TFT) Channels 3 1.1.2 Historical Overview 4 1.1.3 Oxide and Silicon 6 1.1.4 Transparent Amorphous Oxide Semiconductors 6 1.1.4.1 Electronic Structures 6 1.1.4.2 Materials 8 1.1.4.3 Characteristic Carrier Transport Properties 9 1.1.4.4 Electronic States 10 1.1.5 P-Type Oxide Semiconductors for Display Applications 13 1.1.5.1 Oxides of Transition Metal Cations with an Electronic Configuration of (n−1)d 10 ns 0 (n = 4or5) 13 1.1.5.2 Oxides of Metal Cations with an Electronic Configuration of ns 2 13 1.1.5.3 Oxides of Metal Cations with an Electronic Configuration of nd 6 14 1.1.6 Novel Amorphous Oxide Semiconductors 15 1.1.7 Summary and Outlook 17 References 18 1.2 Transparent Amorphous Oxide Semiconductors 21Hideya Kumomi 1.2.1 Introduction 21 1.2.2 Technical Issues and Requirements of TFTs for AM-FPDs 21 1.2.2.1 Field-Effect Mobility 21 1.2.2.2 Off-State Leakage Current and On/Off Current Ratio 23 1.2.2.3 Stability and Reliability 23 1.2.2.4 Uniformity 23 1.2.2.5 Large-Area Devices by Large-Area Mother-Glass Substrates 24 1.2.2.6 Low-Temperature Fabrication and Flexibility 24 1.2.3 History, Features, Uniqueness, Development, and Applications of AOS-TFTs 24 1.2.3.1 History 24 1.2.3.2 Features and Uniqueness 25 1.2.3.3 Applications 27 1.2.3.4 Development and Products of AM-FPDs 28 1.2.4 Summary 29 References 30 Part II Fundamentals 31 2 Electronic Structure and Structural Randomness 33Julia E. Medvedeva, Bishal Bhattarai, and D. Bruce Buchholz 2.1 Introduction 33 2.2 Brief Description of Methods and Approaches 35 2.2.1 Computational Approach 35 2.2.2 Experimental Approach 36 2.3 The Structure and Properties of Crystalline and Amorphous In 2 O 3 36 2.4 The Structure and Properties of Crystalline and Amorphous SnO 2 43 2.5 The Structure and Properties of Crystalline and Amorphous ZnO 46 2.6 The Structure and Properties of Crystalline and Amorphous Ga 2 O 3 52 2.7 Role of Morphology in Structure–Property Relationships 57 2.8 The Role of Composition in Structure–Property Relationships: IGO and IGZO 64 2.9 Conclusions 69 References 70 3 Electronic Structure of Transparent Amorphous Oxide Semiconductors 73John Robertson and Zhaofu Zhang 3.1 Introduction 73 3.2 Mobility 73 3.3 Density of States 74 3.4 Band Structures of n-Type Semiconductors 78 3.5 Instabilities 81 3.6 Doping Limits and Finding Effective Oxide Semiconductors 86 3.7 OLED Electrodes 88 3.8 Summary 89 References 89 4 Defects and Relevant Properties 93Toshio Kamiya, Kenji Nomura, Keisuke Ide, and Hideo Hosono 4.1 Introduction 93 4.2 Typical Deposition Condition 93 4.3 Overview of Electronic Defects in AOSs 94 4.4 Origins of Electron Donors 96 4.5 Oxygen- and Hydrogen-Related Defects and Near-VBM States 98 4.6 Summary 102 References 102 5 Amorphous Semiconductor Mobility Physics and TFT Modeling 105John F. Wager 5.1 Amorphous Semiconductor Mobility: An Introduction 105 5.2 Diffusive Mobility 106 5.3 Density of States 110 5.4 TFT Mobility Considerations 111 5.5 TFT Mobility Extraction, Fitting, and Model Validation 112 5.6 Physics-Based TFT Mobility Modeling 118 5.7 Conclusions 121 References 122 6 Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder 125A. V. Nenashev, F. Gebhard, K. Meerholz, and S. D. Baranovskii 6.1 Introduction 125 6.2 Band Transport via Extended States in the Random-Barrier Model (RBM) 126 6.2.1 Deficiencies of the Rate-Averaging Approach: Electrotechnical Analogy 127 6.2.2 Percolation Approach to Charge Transport in the RBM 129 6.3 Random Band-Edge Model (RBEM) for Charge Transport in AOSs 131 6.4 Percolation Theory for Charge Transport in the RBEM 133 6.4.1 From Regional to Global Conductivities in Continuum Percolation Theory 133 6.4.2 Averaging Procedure by Adler et al. 135 6.5 Comparison between Percolation Theory and EMA 136 6.6 Comparison with Experimental Data 137 6.7 Discussion and Conclusions 140 6.7.1 Textbook Description of Charge Transport in Traditional Crystalline Semiconductors (TCSs) 140 6.7.2 Results of This Chapter for Charge Transport in Amorphous Oxide Semiconductors (AOSs) 141 Acknowledgments 141 References 141 7 State and Role of Hydrogen in Amorphous Oxide Semiconductors 145Hideo Hosono and Toshio Kamiya 7.1 Introduction 145 7.2 Concentration and Chemical States 145 7.3 Carrier Generation and Hydrogen 150 7.3.1 Carrier Generation by H Injection at Low Temperatures 150 7.3.2 Carrier Generation and Annihilation by Thermal Treatment 151 7.4 Energy Levels and Electrical Properties 153 7.5 Incorporation and Conversion of H Impurities 154 7.6 Concluding Remarks 155 Acknowledgments 156 References 156 Part III Processing 159 8 Low-Temperature Thin-Film Combustion Synthesis of Metal-Oxide Semiconductors: Science and Technology 161Binghao Wang, Wei Huang, Antonio Facchetti, and Tobin J. Marks 8.1 Introduction 161 8.2 Low-Temperature Solution-Processing Methodologies 162 8.2.1 Alkoxide Precursors 162 8.2.2 Microwave-Assisted Annealing 165 8.2.3 High-Pressure Annealing 165 8.2.4 Photonic Annealing 165 8.2.4.1 Laser Annealing 166 8.2.4.2 Deep-Ultraviolet Illumination 168 8.2.4.3 Flash Lamp Annealing 170 8.2.5 Redox Reactions 170 8.3 Combustion Synthesis for MO TFTs 171 8.3.1 n-Type MO TFTs 172 8.3.2 p-Type MO TFTs 178 8.4 Summary and Perspectives 180 Acknowledgments 180 References 181 9 Solution-Processed Metal-Oxide Thin-Film Transistors for Flexible Electronics 185Hyun Jae Kim 9.1 Introduction 185 9.2 Fundamentals of Solution-Processed Metal-Oxide Thin-Film Transistors 187 9.2.1 Deposition Methods for Solution-Processed Oxide Semiconductors 187 9.2.1.1 Coating-Based Deposition Methods 190 9.2.1.2 Printing-Based Deposition Methods 191 9.2.2 The Formation Mechanism of Solution-Processed Oxide Semiconductor Films 194 9.3 Low-Temperature Technologies for Active-Layer Engineering of Solution-Processed Oxide TFTs 196 9.3.1 Overview 196 9.3.2 Solution Modulation 197 9.3.2.1 Alkoxide Precursors 198 9.3.2.2 pH Adjustment 199 9.3.2.3 Combustion Reactions 199 9.3.2.4 Aqueous Solvent 199 9.3.3 Process Modulation 201 9.3.3.1 Photoactivation Process 201 9.3.3.2 High-Pressure Annealing (HPA) Process 202 9.3.3.3 Microwave-Assisted Annealing Process 204 9.3.3.4 Plasma-Assisted Annealing Process 204 9.3.4 Structure Modulation 205 9.3.4.1 Homojunction Dual-Active or Multiactive Layer 206 9.3.4.2 Heterojunction Dual- or Multiactive Layer 206 9.4 Applications of Flexible Electronics with Low-Temperature Solution-Processed Oxide TFTs 208 9.4.1 Flexible Displays 208 9.4.2 Flexible Sensors 208 9.4.3 Flexible Integrated Circuits 209 References 209 10 Recent Progress on Amorphous Oxide Semiconductor Thin-Film Transistors Using the Atomic Layer Deposition Technique 213Hyun-Jun Jeong and Jin-Seong Park 10.1 Atomic Layer Deposition (ALD) for Amorphous Oxide Semiconductor (AOS) Applications 213 10.1.1 The ALD Technique 213 10.1.2 Research Motivation for ALD AOS Applications 215 10.2 AOS-TFTs Based on ALD 217 10.2.1 Binary Oxide Semiconductor TFTs Based on ALD 217 10.2.1.1 ZnO-TFTs 217 10.2.1.2 InOx-TFTs 218 10.2.1.3 SnOx-TFTs 218 10.2.2 Ternary and Quaternary Oxide Semiconductor TFTs Based on ALD 220 10.2.2.1 Indium–Zinc Oxide (IZO) and Indium–Gallium Oxide (IGO) 220 10.2.2.2 Zinc–Tin Oxide (ZTO) 223 10.2.2.3 Indium–Gallium–Zinc Oxide (IGZO) 223 10.2.2.4 Indium–Tin–Zinc Oxide (ITZO) 226 10.3 Challenging Issues of AOS Applications Using ALD 226 10.3.1 p-Type Oxide Semiconductors 226 10.3.1.1 Tin Monoxide (SnO) 228 10.3.1.2 Copper Oxide (cu x O) 229 10.3.2 Enhancing Device Performance: Mobility and Stability 230 10.3.2.1 Composition Gradient Oxide Semiconductors 230 10.3.2.2 Two-Dimensional Electron Gas (2DEG) Oxide Semiconductors 231 10.3.2.3 Spatial and Atmospheric ALD for Oxide Semiconductors 234 References 234 Part IV Thin-Film Transistors 239 11 Control of Carrier Concentrations in AOSs and Application to Bulk-Accumulation TFTs 241Suhui Lee and Jin Jang 11.1 Introduction 241 11.2 Control of Carrier Concentration in a-IGZO 242 11.3 Effect of Carrier Concentration on the Performance of a-IGZO TFTs with a Dual-Gate Structure 247 11.3.1 Inverted Staggered TFTs 247 11.3.2 Coplanar TFTs 251 11.4 High-Drain-Current, Dual-Gate Oxide TFTs 252 11.5 Stability of Oxide TFTs: PBTS, NBIS, HCTS, Hysteresis, and Mechanical Strain 259 11.6 TFT Circuits: Ring Oscillators and Amplifier Circuits 266 11.7 Conclusion 270 References 270 12 Elevated-Metal Metal-Oxide Thin-Film Transistors: A Back-Gate Transistor Architecture with Annealing-Induced Source/Drain Regions 273Man Wong, Zhihe Xia, and Jiapeng li 12.1 Introduction 273 12.1.1 Semiconducting Materials for a TFT 274 12.1.1.1 Amorphous Silicon 274 12.1.1.2 Low-Temperature Polycrystalline Silicon 274 12.1.1.3 MO Semiconductors 275 12.1.2 TFT Architectures 276 12.2 Annealing-Induced Generation of Donor Defects 279 12.2.1 Effects of Annealing on the Resistivity of IGZO 279 12.2.2 Microanalyses of the Thermally Annealed Samples 283 12.2.3 Lateral Migration of the Annealing-Induced Donor Defects 284 12.3 Elevated-Metal Metal-Oxide (EMMO) TFT Technology 286 12.3.1 Technology and Characteristics of IGZO EMMO TFTs 287 12.3.2 Applicability of EMMO Technology to Other MO Materials 291 12.3.3 Fluorinated EMMO TFTs 292 12.3.4 Resilience of Fluorinated MO against Hydrogen Doping 296 12.3.5 Technology and Display Resolution Trend 298 12.4 Enhanced EMMO TFT Technologies 301 12.4.1 3-EMMO TFT Technology 302 12.4.2 Self-Aligned EMMO TFTs 307 12.5 Conclusion 309 Acknowledgments 310 References 310 13 Hot Carrier Effects in Oxide-TFTs 315Mami N. Fujii, Takanori Takahashi, Juan Paolo Soria Bermundo, and Yukiharu Uraoka 13.1 Introduction 315 13.2 Analysis of Hot Carrier Effect in IGZO-TFTs 315 13.2.1 Photoemission from IGZO-TFTs 315 13.2.2 Kink Current in Photon Emission Condition 318 13.2.3 Hot Carrier–Induced Degradation of a-IGZO-TFTs 318 13.3 Analysis of the Hot Carrier Effect in High-Mobility Oxide-TFTs 322 13.3.1 Bias Stability under DC Stresses in a High-Mobility IWZO-TFT 322 13.3.2 Analysis of Dynamic Stress in Oxide-TFTs 323 13.3.3 Photon Emission from the IWZO-TFT under Pulse Stress 323 13.4 Conclusion 328 References 328 14 Carbon-Related Impurities and NBS Instability in AOS-TFTs 333Junghwan Kim and Hideo Hosono 14.1 Introduction 333 14.2 Experimental 334 14.3 Results and Discussion 334 14.4 Summary 337 References 339 Part V TFTs and Circuits 341 15 Oxide TFTs for Advanced Signal-Processing Architectures 343Arokia Nathan, Denis Striakhilev, and Shuenn-Jiun Tang 15.1 Introduction 343 15.1.1 Device–Circuit Interactions 343 15.2 Above-Threshold TFT Operation and Defect Compensation: AMOLED Displays 345 15.2.1 AMOLED Display Challenges 345 15.2.2 Above-Threshold Operation 347 15.2.3 Temperature Dependence 347 15.2.4 Effects of Process-Induced Spatial Nonuniformity 349 15.2.5 Overview of External Compensation for AMOLED Displays 351 15.3 Ultralow-Power TFT Operation in a Deep Subthreshold (Near Off-State) Regime 354 15.3.1 Schottky Barrier TFTs 355 15.3.2 Device Characteristics and Small Signal Parameters 358 15.3.3 Common Source Amplifier 360 15.4 Oxide TFT-Based Image Sensors 362 15.4.1 Heterojunction Oxide Photo-TFTs 362 15.4.2 Persistent Photocurrent 364 15.4.3 All-Oxide Photosensor Array 365 References 366 16 Device Modeling and Simulation of TAOS-TFTs 369Katsumi Abe 16.1 Introduction 369 16.2 Device Models for TAOS-TFTs 369 16.2.1 Mobility Model 369 16.2.2 Density of Subgap States (DOS) Model 371 16.2.3 Self-Heating Model 372 16.3 Applications 373 16.3.1 Temperature Dependence 373 16.3.2 Channel-Length Dependence 373 16.3.3 Channel-Width Dependence 375 16.3.4 Dual-Gate Structure 378 16.4 Reliability 379 16.5 Summary 381 Acknowledgments 381 References 382 17 Oxide Circuits for Flexible Electronics 383Kris Myny, Nikolaos Papadopoulos, Florian De Roose, and Paul Heremans 17.1 Introduction 383 17.2 Technology-Aware Design Considerations 383 17.2.1 Etch-Stop Layer, Backchannel Etch, and Self-Aligned Transistors 384 17.2.1.1 Etch-Stop Layer 384 17.2.1.2 Backchannel Etch 385 17.2.1.3 Self-Aligned Transistors 385 17.2.1.4 Comparison 386 17.2.2 Dual-Gate Transistors 386 17.2.2.1 Stack Architecture 386 17.2.2.2 Effect of the Backgate 388 17.2.3 Moore’s Law for TFT Technologies 389 17.2.3.1 Cmos 389 17.2.3.2 Thin-Film Electronics Historically 389 17.2.3.3 New Drivers for Thin-Film Scaling: Circuits 390 17.2.3.4 L-Scaling 391 17.2.3.5 W and L Scaling 391 17.2.3.6 Overall Lateral Scaling 391 17.2.3.7 Oxide Thickness and Supply Voltage Scaling 391 17.2.4 Conclusion 392 17.3 Digital Electronics 392 17.3.1 Communication Chips 392 17.3.2 Complex Metal-Oxide-Based Digital Chips 395 17.4 Analog Electronics 396 17.4.1 Thin-Film ADC Topologies 396 17.4.2 Imager Readout Peripherals 397 17.4.3 Healthcare Patches 399 17.5 Summary 400 Acknowledgments 400 References 400 Part VI Display and Memory Applications 405 18 Oxide TFT Technology for Printed Electronics 407Toshiaki Arai 18.1 OLEDs 407 18.1.1 OLED Displays 407 18.1.2 Organic Light-Emitting Diodes 408 18.1.3 Printed OLEDs 409 18.2 TFTs for OLED Driving 413 18.2.1 TFT Candidates 413 18.2.2 Pixel Circuits 413 18.2.3 Oxide TFTs 414 18.2.3.1 Bottom-Gate TFTs 415 18.2.3.2 Top-Gate TFTs 418 18.3 Oxide TFT–Driven Printed OLED Displays 424 18.4 Summary 427 References 428 19 Mechanically Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channels on Ultrathin Polyimide Films 431Sung-Min Yoon, Hyeong-Rae Kim, Hye-Won Jang, Ji-Hee Yang, Hyo-Eun Kim, and Sol-Mi Kwak 19.1 Introduction 431 19.2 Fabrication of Memory TFTs 432 19.2.1 Substrate Preparation 432 19.2.2 Device Fabrication Procedures 434 19.2.3 Characterization Methodologies 435 19.3 Device Operations of Flexible Memory TFTs 437 19.3.1 Optimization of Flexible IGZO-TFTs on PI Films 437 19.3.2 Nonvolatile Memory Operations of Flexible Memory TFTs 438 19.3.3 Operation Mechanisms and Device Physics 442 19.4 Choice of Alternative Materials 444 19.4.1 Introduction to Conducting Polymer Electrodes 444 19.4.2 Introduction of Polymeric Gate Insulators 446 19.5 Device Scaling to Vertical-Channel Structures 447 19.5.1 Vertical-Channel IGZO-TFTs on PI Films 447 19.5.2 Vertical-Channel Memory TFTs Using IGZO Channel and ZnO Trap Layers 449 19.6 Summary 453 19.6.1 Remaining Technical Issues 453 19.6.2 Conclusions and Outlooks 453 References 454 20 Amorphous Oxide Semiconductor TFTs for BEOL Transistor Applications 457Nobuyoshi Saito and Keiji Ikeda 20.1 Introduction 457 20.2 Improvement of Immunity to H 2 Annealing 458 20.3 Increase of Mobility and Reduction of S/D Parasitic Resistance 463 20.4 Demonstration of Extremely Low Off-State Leakage Current Characteristics 467 References 471 21 Ferroelectric-HfO 2 Transistor Memory with IGZO Channels 473Masaharu Kobayashi 21.1 Introduction 473 21.2 Device Operation and Design 475 21.3 Device Fabrication 478 21.4 Experimental Results and Discussions 479 21.4.1 FE-HfO 2 Capacitors with an IGZO Layer 479 21.4.2 IGZO Channel FeFETs 481 21.5 Summary 484 Acknowledgments 484 References 485 22 Neuromorphic Chips Using AOS Thin-Film Devices 487Mutsumi Kimura 22.1 Introduction 487 22.2 Neuromorphic Systems with Crosspoint-Type α-GTO Thin-Film Devices 488 22.2.1 Neuromorphic Systems 488 22.2.1.1 α-GTO Thin-Film Devices 488 22.2.1.2 System Architecture 489 22.2.2 Experimental Results 492 22.3 Neuromorphic System Using an LSI Chip and α-IGZO Thin-Film Devices [24] 493 22.3.1 Neuromorphic System 494 22.3.1.1 Neuron Elements 494 22.3.1.2 Synapse Elements 494 22.3.1.3 System Architecture 495 22.3.2 Working Principle 495 22.3.2.1 Cellular Neural Network 495 22.3.2.2 Tug-of-War Method 497 22.3.2.3 Modified Hebbian Learning 497 22.3.2.4 Majority-Rule Handling 498 22.3.3 Experimental Results 498 22.3.3.1 Raw Data 498 22.3.3.2 Associative Memory 499 22.4 Conclusion 499 Acknowledgments 500 References 500 23 Oxide TFTs and Their Application to X-Ray Imaging 503Robert A. Street 23.1 Introduction 503 23.2 Digital X-Ray Detection and Imaging Modalities 504 23.2.1 Indirect Detection Imaging 504 23.2.2 Direct Detection Imaging 505 23.2.3 X-Ray Imaging Modalities 505 23.3 Oxide-TFT X-Ray Detectors 506 23.3.1 TFT Backplane Requirements for Digital X-Rays 506 23.3.2 An IGZO Detector Fabrication and Characterization 506 23.3.3 Other Reported Oxide X-Ray Detectors 509 23.4 How Oxide TFTs Can Improve Digital X-Ray Detectors 509 23.4.1 Noise and Image Quality in X-Ray Detectors 510 23.4.2 Minimizing Additive Electronic Noise with Oxides 510 23.4.3 Pixel Amplifier Backplanes 511 23.4.4 IGZO-TFT Noise 511 23.5 Radiation Hardness of Oxide TFTs 513 23.6 Oxide Direct Detector Materials 515 23.7 Summary 515 References 515 Part VII New Materials 519 24 Toward the Development of High-Performance p-Channel Oxide-TFTs and All-Oxide Complementary Circuits 521Kenji Nomura 24.1 Introduction 521 24.2 Why Is High-Performance p-Channel Oxide Difficult? 521 24.3 The Current Development of p-Channel Oxide-TFTs 524 24.4 Comparisons of p-Type Cu 2 O and SnO Channels 526 24.5 Comparisons of the TFT Characteristics of Cu 2 O and SnO-TFTs 529 24.6 Subgap Defect Termination for p-Channel Oxides 532 24.7 All-Oxide Complementary Circuits 534 24.8 Conclusions 535 References 536 25 Solution-Synthesized Metal Oxides and Halides for Transparent p-Channel TFTs 539Ao Liu, Huihui Zhu, and Yong-Young Noh 25.1 Introduction 539 25.2 Solution-Processed p-Channel Metal-Oxide TFTs 540 25.3 Transparent Copper(I) Iodide (CuI)–Based TFTs 546 25.4 Conclusions and Perspectives 548 Acknowledgments 549 References 549 26 Tungsten-Doped Active Layers for High-Mobility AOS-TFTs 553Zhang Qun 26.1 Introduction 553 26.2 Advances in Tungsten-Doped High-Mobility AOS-TFTs 555 26.2.1 a-IWO-TFTs 555 26.2.2 a-IZWO-TFTs 562 26.2.3 Dual Tungsten-Doped Active-Layer TFTs 565 26.2.4 Treatment on the Backchannel Surface 566 26.3 Perspectives for High-Mobility AOS Active Layers 570 References 572 27 Rare Earth– and Transition Metal–Doped Amorphous Oxide Semiconductor Phosphors for Novel Light-Emitting Diode Displays 577Keisuke Ide, Junghwan Kim, Hideo Hosono, and Toshio Kamiya 27.1 Introduction 577 27.2 Eu-Doped Amorphous Oxide Semiconductor Phosphor 577 27.3 Multiple-Color Emissions from Various Rare Earth–Doped AOS Phosphors 579 27.4 Transition Metal–Doped AOS Phosphors 582 References 584 28 Application of AOSs to Charge Transport Layers in Electroluminescent Devices 585Junghwan Kim and Hideo Hosono 28.1 Electronic Structure and Electrical Properties of Amorphous Oxide Semiconductors (AOSs) 585 28.2 Criteria for Charge Transport Layers in Electroluminescent (EL) Devices 585 28.3 Amorphous Zn-Si-O Electron Transport Layers for Perovskite Light-Emitting Diodes (PeLEDs) 587 28.4 Amorphous In-Mo-O Hole Injection Layers for OLEDs 589 28.5 Perspective 594 References 595 29 Displays and Vertical-Cavity Surface-Emitting Lasers 597Kenichi Iga 29.1 Introduction to Displays 597 29.2 Liquid Crystal Displays (LCDs) 597 29.2.1 History of LCDs 597 29.2.2 Principle of LCD: The TN Mode 598 29.2.3 Other LC Modes 600 29.2.4 Light Sources 600 29.2.5 Diffusion Plate and Light Guiding Layer 601 29.2.6 Microlens Arrays 601 29.2.7 Short-Focal-Length Projection 602 29.3 Organic EL Display 602 29.3.1 Method (a): Color-Coding Method 603 29.3.2 Method (b): Filter Method 603 29.3.3 Method (c): Blue Conversion Method 603 29.4 Vertical-Cavity Surface-Emitting Lasers 604 29.4.1 Motivation of Invention 604 29.4.2 What Is the Difference? 605 29.4.3 Device Realization 605 29.4.4 Applications 607 29.5 Laser Displays including VCSELs 607 29.5.1 Laser Displays 607 29.5.2 Color Gamut 608 29.5.3 Laser Backlight Method 609 Acknowledgments 610 References 611 Index 613
£999.99
John Wiley & Sons Inc Practical ESD Protection Design
Book SynopsisAn authoritative single-volume reference on the design and analysis of ESD protection for ICs Electrostatic discharge (ESD) is a major reliability challenge to semiconductors, integrated circuits (ICs), and microelectronic systems. On-chip ESD protection is a vital to any electronic products, such as smartphones, laptops, tablets, and other electronic devices.Practical ESD Protection Designprovides comprehensive and systematic guidance on all major aspects of designs of on-chip ESD protection for integrated circuits (ICs). Written for students and practicing engineers alike, this one-stop resource covers essential theories, hands-on design skills, computer-aided design (CAD) methods, characterization and analysis techniques, and more on ESD protection designs. Detailed chapters examine an array of topics ranging from fundamental to advanced, including ESD phenomena, ESD failure analysis, ESD testing models, ESD protection devices and circuits, ESD design layout and technology effectTable of ContentsAuthor Biography xi Preface xiii 1 Why ESD? 1 1.1 A Historical Perspective 1 1.2 ESD and the Dangers 3 1.3 ESD Protection: The Principles 9 1.4 ESD Protection: More or Less? 13 1.5 ESD Protection: Evolution to Revolution 15 References 15 2 ESD Failure Analysis 19 2.1 ESD Failure Analysis 19 2.1.1 ESD Failure Criteria 19 2.1.2 Hard and Soft ESD Failures 20 2.2 ESD FA Techniques 20 2.3 ESD Failure Signatures 22 2.4 ESD Soft Failures 38 2.5 ESD Failure Correlation 41 2.6 ESD Failure Models 44 References 47 3 ESD Test Models and Standards 51 3.1 ESD Origins 51 3.2 HBM Model 52 3.3 mm Model 58 3.4 CDM Model 61 3.5 IEC Model 67 3.6 TLP Model 69 3.7 Summary 74 References 75 4 ESD Protection Devices 77 4.1 On-Chip ESD Protection Mechanisms 77 4.1.1 Switch for ESD Discharge 77 4.1.2 ESD Protection: Active versus Passive 81 4.2 Diode for ESD Protection 84 4.2.1 Diode Device Physics 84 4.2.2 Diode in ESD Protection 85 4.2.3 Diode ESD Parasitic Modeling 87 4.3 BJT for ESD Protection 87 4.3.1 BJT Device Physics 88 4.3.2 BJT in ESD Protection 90 4.3.3 BJT ESD Parasitic Modeling 92 4.4 MOSFET for ESD Protection 93 4.4.1 MOSFET Device Physics 94 4.4.2 ggMOS in ESD Protection 95 4.4.3 MOSFET ESD Parasitic Modeling 98 4.5 SCR for ESD Protection 99 4.5.1 SCR Device Physics 100 4.5.2 SCR in ESD Protection 102 4.5.3 SCR ESD Parasitic Modeling 106 4.6 Summary 107 References 109 5 ESD Protection Circuits 111 5.1 I/O ESD Protection 111 5.1.1 Two-Stage ESD Protection 112 5.1.2 Multiple-Fingers ESD Protection 113 5.1.3 MOSFET ESD Protection Circuits 114 5.1.4 BJT ESD Protection Circuits 117 5.1.5 SCR ESD Protection Circuits 120 5.2 ESD Self-Protection 121 5.2.1 Output ESD Protection 121 5.2.2 ESD Self-Protection 124 5.3 Low-Triggering ESD Protection Circuits 124 5.4 ESD Power Clamps 129 5.4.1 Diode-String Power Clamps 131 5.4.2 MOSFET Power Clamps 134 5.4.3 SCR Power Clamps 135 5.4.4 Any Switch Power Clamps 135 5.5 Summary 136 References 137 6 Full-Chip ESD Protection 139 6.1 Full-Chip ESD Protection Principles 139 6.2 ESD Protection Design Window 140 6.3 Advanced ESD Protection: More at Less 142 6.3.1 Dual-Polarity ESD Protection 143 6.3.2 Multiple-Polarity ESD Protection 147 6.4 Full-Chip ESD Protection Schemes 150 6.4.1 Full-Chip ESD Consideration 150 6.4.2 Pad-Clamp Scheme 151 6.4.3 Global ESD Bus Scheme 153 6.5 No Universal ESD Protection Solution 154 References 155 7 Mixed-Signal and HV ESD Protection 157 7.1 ESD Protection for Mixed-Signal ICs 157 7.2 ESD Protection for Multiple-Voltages ICs 162 7.3 ESD Protection for High-Voltage ICs 167 7.3.1 ESD Design Window Compliance 167 7.3.2 Latch-up Immunity 173 7.4 Summary 174 References 175 8 TCAD-Based Mixed-Mode ESD Protection Designs 177 8.1 ESD Design Optimization and Prediction 177 8.2 TCAD-Based Mixed-Mode ESD Simulation-Design Methodology 182 8.3 Mixed-Mode ESD Simulation-Design Examples 188 8.3.1 Example 1: Understand TCAD ESD Simulation 188 8.3.2 Example-2: ggNMOS versus gcNMOS ESD Protection 192 8.3.3 Example-3: ESD Power Clamp in 0.35 μmCMOS 196 8.3.4 Example-4: Optimize HV ESD Protection Design 199 8.3.5 Example-5: ESD Layout Analysis by 3D TCAD 203 8.3.6 Example-6: Multiple-Stimuli TCAD ESD Simulation 210 8.4 Summary 218 References 219 9 RF ESD Protection 221 9.1 What Is Special for RF ESD Protection? 221 9.2 RF ESD Protection Characterization 226 9.3 Low-Parasitic ESD Protection Solutions 232 9.4 RF ESD Protection Design Example 233 9.5 Summary 236 References 237 10 ESD-RFIC Co-Design 239 10.1 ESD-IC Interactions 239 10.1.1 IC Affects ESD Protection 239 10.1.2 ESD Affects IC Performance 241 10.2 ESD-RFIC Co-Design 248 10.2.1 ESD-RFIC Co-Design Principle 249 10.2.2 ESD–RFIC Co-Design Examples 251 10.3 Summary 259 References 259 11 ESD Layout Designs 261 11.1 Layout is Critical to ESD Protection 261 11.2 Basic ESD Protection Layout 262 11.3 Advanced ESD Protection Layout 274 11.3.1 Advanced ESD Layout Considerations 274 11.3.2 ESD Design Layout is an Art 278 11.4 3D TCAD for ESD Layout Designs 284 11.5 Summary 294 References 295 12 ESD versus IC Technologies 297 12.1 IC Technologies and ESD Protection 297 12.1.1 ESD Metal Interconnects 297 12.1.2 Technology-ESD Co-Development 299 12.1.3 Graphene Heat Spreading 305 12.2 Technology Affects ESD Design Window 305 12.3 Lowering ESD Protection for Advanced ICs? 306 12.4 Summary 308 References 308 13 ESD Circuit Simulation by SPICE 311 13.1 ESD Device Behavior Modeling 311 13.2 Full-Chip ESD Circuit Simulation by SPICE 314 13.2.1 Principle for ESD Circuit Simulation by SPICE 314 13.2.2 Circuit-Level ESD Design Verification by SPICE 319 13.3 Summary 326 References 326 14 Emerging ESD Protection 327 14.1 Emerging ESD Protection Challenges 327 14.2 Dispensable ESD Protection 328 14.3 Field-Programmable ESD Protection 332 14.3.1 Nano-Crystal Quantum-Dots ESD Protection 332 14.3.2 SONOS ESD Protection 334 14.4 Interposer/TSV-Based ESD Protection 337 14.5 Summary 341 References 342 15 ESD CAD for Full-Chip Design Verification 345 15.1 Full-Chip ESD Design Verification 345 15.2 CAD Algorithms for ESD Design Verification 347 15.3 Full-Chip ESD Design Verification Examples 353 15.4 Summary 363 References 364 16 New CDM ESD Protection 367 16.1 Misconception in CDM ESD Protection 367 16.2 Analyzing Pad-Based CDM ESD Protection 370 16.3 Internally Distributed CDM ESD Protection 385 16.4 Summary 391 References 392 17 Future ESD Protection Outlook 395 17.1 The Fundamental ESD Protection Problem 395 17.2 Above-IC Nano-Crossbar Array ESD Switch 396 17.3 Graphene ESD Protection Switch 401 17.4 Graphene ESD Protection Interconnects 405 17.5 Future ESD Protection Outlook 407 17.6 Summary 410 References 411 Index 413
£105.26
John Wiley & Sons Inc Semiconductor Microchips and Fabrication
Book SynopsisTable of ContentsAuthor Biography xi Preface xiii 1 Introduction to the Basic Concepts 1 1.1 What Is a Microchip? 1 1.2 Ohm’s Law and Resistivity 1 1.3 Conductor, Insulator, and Semiconductor 5 References 5 2 Brief Introduction of Theories 7 2.1 The Birth of Quantum Mechanics 7 2.2 Energy Band (Band) 11 References 15 3 Early Radio Communication 17 3.1 Telegraph Technology 17 3.2 Electron Tube 19 References 22 4 Basic Knowledge of Electric Circuits (Circuits) 23 4.1 Electric Circuits and the Components 23 4.2 Electric Field 26 4.3 Magnetic Field 28 4.4 Alternating Current 30 5 Further Discussion of Semiconductors and Diodes 33 5.1 Semiconductor Energy Band 33 5.2 Semiconductor Doping 36 5.3 Semiconductor Diode 42 References 46 6 Transistor and Integrated Circuit 47 6.1 Bipolar Transistor 47 6.2 Junction Field Effect Transistor 49 6.3 Metal–Semiconductor Field Effect Transistor 52 6.4 Metal–Insulator–Semiconductor Field Effect Transistor 55 References 60 7 The Development History of Semiconductor Industry 61 7.1 The Instruction of Semiconductor Products and Structures 61 7.2 A Brief History of the Semiconductor Industry 63 7.3 Changes in the Size of Transistors and SiliconWafers 65 7.4 Clean Room 67 7.5 Planar Process 71 References 75 8 Semiconductor Photonic Devices 77 8.1 Light-Emitting Devices and Light-Emitting Principles 77 8.2 Light-Emitting Diode (LED) 82 8.3 Semiconductor Diode Laser 88 8.3.1 Resonant Cavity 89 8.3.2 Reflection and Refraction of Light 91 8.3.3 Heterojunction Materials 93 8.3.4 Population Inversion and Threshold Current Density 94 References 96 9 Semiconductor Light Detection and Photocell 97 9.1 Digital Camera and CCD 97 9.2 Photoconductor 100 9.3 Transistor Laser 101 9.4 Solar Cell 105 References 106 10 Manufacture of Silicon Wafer 109 10.1 From Quartzite Ore to Polysilicon 110 10.2 Chemical Reaction 113 10.3 Pull Single Crystal 115 10.4 Polishing and Slicing 116 References 123 11 Basic Knowledges of Process 125 11.1 The Structure of Integrated Circuit (IC) 125 11.2 Resolution of Optical System 128 11.3 Why Plasma Used in the Process 131 References 133 12 Photolithography (Lithography) 135 12.1 The Steps of Lithography Process 135 12.1.1 Cleaning 135 12.1.2 Dehydration Bake 136 12.1.3 Photoresist Coating 138 12.1.4 Soft Bake 141 12.1.5 Alignment and Exposure 141 12.1.6 Developing 145 12.1.7 Inspection 146 12.1.8 Hard Bake 147 12.1.9 Descum 148 12.2 Alignment Mark (Mark) Design on the Photomask 152 12.3 Contemporary Photolithography Equipment Technologies 156 References 159 13 Dielectric Films Growth 161 13.1 The Growth of Silicon Dioxide Film 162 13.1.1 Thermal Oxidation Process of SiO2 162 13.1.2 LTO Process 164 13.1.3 PECVD Process of Silicon Dioxide 166 13.1.4 TEOS + O3 Deposition Using APCVD System 167 13.2 The Growth of Silicon Nitride Film 168 13.2.1 LPCVD 168 13.2.2 PECVD Process of Silicon Nitride 171 13.3 Atomic Layer Deposition Technique 174 References 177 14 Introduction of Etching and RIE System 179 14.1 Wet Etching 179 14.2 RIE System for Dry Etching 182 14.2.1 RIE Process Flow and Equipment Structure 182 14.2.2 Process Chamber 184 14.2.3 Vacuum Pumps 186 14.2.4 RF Power Supply (Source) and Matching Network (Matchwork) 187 14.2.5 Gas Cylinder and Mass Flow Controller (MFC) 189 14.2.6 Heater and Coolant 194 References 196 15 Dry Etching 197 15.1 The Etch Profile of RIE 197 15.1.1 Case 1 198 15.1.2 Case 2 201 15.2 Etching Rate of RIE 203 15.3 Dry Etching of III–V Semiconductors and Metals 206 15.4 Etch Profile Control 207 15.4.1 Influence of the PR Opening Shape on the Etch Profile 208 15.4.2 The Effect of Carbon on Etching Rate and Profile 209 15.5 Other Issues 211 15.5.1 The Differences Between RIE and PECVD 211 15.5.2 The Difference Between Si and SiO2 Dry Etching 214 15.6 Inductively Coupled Plasma (ICP) Technique and Bosch Process 215 15.6.1 Inductively Coupled Plasma Technique 216 15.6.2 Bosch Process 219 References 223 16 Metal Processes 225 16.1 Thermal Evaporation Technique 225 16.2 Electron Beam Evaporation Technique 227 16.3 Magnetron Sputtering Deposition Technique 231 16.4 The Main Differences Between Electron Beam (Thermal) Evaporation and Sputtering Deposition 234 16.5 Metal Lift-off Process 235 16.6 Metal Selection and Annealing Technology 241 16.6.1 The Selection of Metals 241 16.6.2 Metal Annealing 242 References 243 17 Doping Processes 245 17.1 Basic Introduction of Doping 245 17.2 Basic Principles of Diffusion 246 17.3 Thermal Diffusion 247 17.4 Diffusion and Redistribution of Impurities in SiO2 248 17.5 Minimum Thickness of SiO2 Masking Film 250 17.6 The Distribution of Impurities Under the SiO2 Masking Film 251 17.7 Diffusion Impurity Sources 252 17.8 Parameters of the Diffusion Layer 255 17.9 Four-Point Probe Sheet Resistance Measurement 256 17.10 Ion Implantation Process 257 17.11 Theoretical Analysis of Ion Implantation 259 17.12 Impurity Distribution after Implantation 260 17.13 Type and Dose of Implanted Impurities 262 17.14 The Minimum Thickness of Masking Film 263 17.15 Annealing Process 264 17.16 Buried Implantation 266 17.16.1 Implantation through Masking Film 266 17.16.2 SOI Manufacture 267 References 270 18 Process Control Monitor, Packaging, and the Others 271 18.1 Dielectric Film Quality Inspection 271 18.2 Ohmic Contact Test 273 18.3 Metal-to-Metal Contact 274 18.4 Conductive Channel Control 277 18.5 Chip Testing 278 18.6 Dicing 279 18.7 Packaging 280 18.8 Equipment Operation Range 281 18.9 Low-k and High-k Dielectrics 282 18.9.1 Copper Interconnection and Low-k Dielectrics 283 18.9.2 Quantum Tunneling Effect and High-k Dielectrics 286 18.10 End 291 References 293 Index 295
£88.65
John Wiley & Sons Inc Semiconductor Laser Engineering Reliability and
Book SynopsisThis reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature.Trade Review“With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.” (The German Branch of the European Optical Society, 1 October 2013) "This book would be a valuable reference and essential source for researchers and engineers who work on the development of diode laser products. It will also be useful for academics and teachers for educational purposes." (Optics & Photonics News, 25 October 2013)Table of ContentsPreface xix About the author xxiii Part 1 Diode Laser Engineering 1 Overview 1 1 Basic diode laser engineering principles 3 Introduction 4 1.1 Brief recapitulation 4 1.1.1 Key features of a diode laser 4 1.1.1.1 Carrier population inversion 4 1.1.1.2 Net gain mechanism 6 1.1.1.3 Optical resonator 9 1.1.1.4 Transverse vertical confinement 11 1.1.1.5 Transverse lateral confinement 12 1.1.2 Homojunction diode laser 13 1.1.3 Double-heterostructure diode laser 15 1.1.4 Quantum well diode laser 17 1.1.4.1 Advantages of quantum well heterostructures for diode lasers 22 Wavelength adjustment and tunability 22 Strained quantum well lasers 23 Optical power supply 25 Temperature characteristics 26 1.1.5 Common compounds for semiconductor lasers 26 1.2 Optical output power – diverse aspects 31 1.2.1 Approaches to high-power diode lasers 31 1.2.1.1 Edge-emitters 31 1.2.1.2 Surface-emitters 33 1.2.2 High optical power considerations 35 1.2.2.1 Laser brightness 36 1.2.2.2 Laser beam quality factor M2 36 1.2.3 Power limitations 37 1.2.3.1 Kinks 37 1.2.3.2 Rollover 38 1.2.3.3 Catastrophic optical damage 38 1.2.3.4 Aging 39 1.2.4 High power versus reliability tradeoffs 39 1.2.5 Typical and record-high cw optical output powers 40 1.2.5.1 Narrow-stripe, single spatial mode lasers 40 1.2.5.2 Standard 100 μm wide aperture single emitters 42 1.2.5.3 Tapered amplifier lasers 43 1.2.5.4 Standard 1 cm diode laser bar arrays 44 1.3 Selected relevant basic diode laser characteristics 45 1.3.1 Threshold gain 45 1.3.2 Material gain spectra 46 1.3.2.1 Bulk double-heterostructure laser 46 1.3.2.2 Quantum well laser 47 1.3.3 Optical confinement 49 1.3.4 Threshold current 52 1.3.4.1 Double-heterostructure laser 52 1.3.4.2 Quantum well laser 54 1.3.4.3 Cavity length dependence 54 1.3.4.4 Active layer thickness dependence 56 1.3.5 Transverse vertical and transverse lateral modes 58 1.3.5.1 Vertical confinement structures – summary 58 Double-heterostructure 58 Single quantum well 58 Strained quantum well 59 Separate confinement heterostructure SCH and graded-index SCH (GRIN-SCH) 59 Multiple quantum well (MQW) 59 1.3.5.2 Lateral confinement structures 60 Gain-guiding concept and key features 60 Weakly index-guiding concept and key features 62 Strongly index-guiding concept and key features 63 1.3.5.3 Near-field and far-field pattern 64 1.3.6 Fabry–P´erot longitudinal modes 67 1.3.7 Operating characteristics 69 1.3.7.1 Optical output power and efficiency 72 1.3.7.2 Internal efficiency and optical loss measurements 74 1.3.7.3 Temperature dependence of laser characteristics 74 1.3.8 Mirror reflectivity modifications 77 1.4 Laser fabrication technology 81 1.4.1 Laser wafer growth 82 1.4.1.1 Substrate specifications and preparation 82 1.4.1.2 Substrate loading 82 1.4.1.3 Growth 83 1.4.2 Laser wafer processing 84 1.4.2.1 Ridge waveguide etching and embedding 84 1.4.2.2 The p-type electrode 84 1.4.2.3 Ridge waveguide protection 85 1.4.2.4 Wafer thinning and the n-type electrode 85 1.4.2.5 Wafer cleaving; facet passivation and coating; laser optical inspection; and electrical testing 86 1.4.3 Laser packaging 86 1.4.3.1 Package formats 87 1.4.3.2 Device bonding 87 1.4.3.3 Optical power coupling 89 1.4.3.4 Device operating temperature control 95 1.4.3.5 Hermetic sealing 95 References 96 2 Design considerations for high-power single spatial mode operation 101 Introduction 102 2.1 Basic high-power design approaches 103 2.1.1 Key aspects 103 2.1.2 Output power scaling 104 2.1.3 Transverse vertical waveguides 105 2.1.3.1 Substrate 105 2.1.3.2 Layer sequence 107 2.1.3.3 Materials; layer doping; graded-index layer doping 108 Materials 108 Layer doping 113 Layer doping – n-type doping 113 Layer doping – p-type doping 113 Graded-index layer doping 114 2.1.3.4 Active layer 114 Integrity – spacer layers 114 Integrity – prelayers 115 Integrity – deep levels 115 Quantum wells versus quantum dots 116 Number of quantum wells 119 2.1.3.5 Fast-axis beam divergence engineering 121 Thin waveguides 122 Broad waveguides and decoupled confinement heterostructures 122 Low refractive index mode puller layers 124 Optical traps and asymmetric waveguide structures 126 Spread index or passive waveguides 127 Leaky waveguides 128 Spot-size converters 128 Photonic bandgap crystal 130 2.1.3.6 Stability of the fundamental transverse vertical mode 133 2.1.4 Narrow-stripe weakly index-guided transverse lateral waveguides 134 2.1.4.1 Ridge waveguide 134 2.1.4.2 Quantum well intermixing 135 2.1.4.3 Weakly index-guided buried stripe 137 2.1.4.4 Slab-coupled waveguide 138 2.1.4.5 Anti-resonant reflecting optical waveguide 140 2.1.4.6 Stability of the fundamental transverse lateral mode 141 2.1.5 Thermal management 144 2.1.6 Catastrophic optical damage elimination 146 2.2 Single spatial mode and kink control 146 2.2.1 Key aspects 146 2.2.1.1 Single spatial mode conditions 147 2.2.1.2 Fundamental mode waveguide optimizations 150 Waveguide geometry; internal physical mechanisms 150 Figures of merit 152 Transverse vertical mode expansion; mirror reflectivity; laser length 153 2.2.1.3 Higher order lateral mode suppression by selective losses 154 Absorptive metal layers 154 Highly resistive regions 156 2.2.1.4 Higher order lateral mode filtering schemes 157 Curved waveguides 157 Tilted mirrors 158 2.2.1.5 Beam steering and cavity length dependence of kinks 158 Beam-steering kinks 158 Kink versus cavity length dependence 159 2.2.1.6 Suppression of the filamentation effect 160 2.3 High-power, single spatial mode, narrow ridge waveguide lasers 162 2.3.1 Introduction 162 2.3.2 Selected calculated parameter dependencies 163 2.3.2.1 Fundamental spatial mode stability regime 163 2.3.2.2 Slow-axis mode losses 163 2.3.2.3 Slow-axis near-field spot size 164 2.3.2.4 Slow-axis far-field angle 166 2.3.2.5 Transverse lateral index step 167 2.3.2.6 Fast-axis near-field spot size 167 2.3.2.7 Fast-axis far-field angle 168 2.3.2.8 Internal optical loss 170 2.3.3 Selected experimental parameter dependencies 171 2.3.3.1 Threshold current density versus cladding layer composition 171 2.3.3.2 Slope efficiency versus cladding layer composition 172 2.3.3.3 Slope efficiency versus threshold current density 172 2.3.3.4 Threshold current versus slow-axis far-field angle 172 2.3.3.5 Slope efficiency versus slow-axis far-field angle 174 2.3.3.6 Kink-free power versus residual thickness 174 2.4 Selected large-area laser concepts and techniques 176 2.4.1 Introduction 176 2.4.2 Broad-area (BA) lasers 178 2.4.2.1 Introduction 178 2.4.2.2 BA lasers with tailored gain profiles 179 2.4.2.3 BA lasers with Gaussian reflectivity facets 180 2.4.2.4 BA lasers with lateral grating-confined angled waveguides 182 2.4.3 Unstable resonator (UR) lasers 183 2.4.3.1 Introduction 183 2.4.3.2 Curved-mirror UR lasers 184 2.4.3.3 UR lasers with continuous lateral index variation 187 2.4.3.4 Quasi-continuous unstable regrown-lens-train resonator lasers 188 2.4.4 Tapered amplifier lasers 189 2.4.4.1 Introduction 189 2.4.4.2 Tapered lasers 189 2.4.4.3 Monolithic master oscillator power amplifiers 192 2.4.5 Linear laser array structures 194 2.4.5.1 Introduction 194 2.4.5.2 Phase-locked coherent linear laser arrays 194 2.4.5.3 High-power incoherent standard 1 cm laser bars 197 References 201 Part 2 Diode Laser Reliability 211 Overview 211 3 Basic diode laser degradation modes 213 Introduction 213 3.1 Degradation and stability criteria of critical diode laser characteristics 214 3.1.1 Optical power; threshold; efficiency; and transverse modes 214 3.1.1.1 Active region degradation 214 3.1.1.2 Mirror facet degradation 215 3.1.1.3 Lateral confinement degradation 215 3.1.1.4 Ohmic contact degradation 216 3.1.2 Lasing wavelength and longitudinal modes 220 3.2 Classification of degradation modes 222 3.2.1 Classification of degradation phenomena by location 222 3.2.1.1 External degradation 222 Mirror degradation 222 Contact degradation 223 Solder degradation 224 3.2.1.2 Internal degradation 224 Active region degradation and junction degradation 224 3.2.2 Basic degradation mechanisms 225 3.2.2.1 Rapid degradation 226 Features and causes of rapid degradation 226 Elimination of rapid degradation 229 3.2.2.2 Gradual degradation 229 Features and causes of gradual degradation 229 Elimination of gradual degradation 230 3.2.2.3 Sudden degradation 231 Features and causes of sudden degradation 231 Elimination of sudden degradation 233 3.3 Key laser robustness factors 234 References 241 4 Optical strength engineering 245 Introduction 245 4.1 Mirror facet properties – physical origins of failure 246 4.2 Mirror facet passivation and protection 249 4.2.1 Scope and effects 249 4.2.2 Facet passivation techniques 250 4.2.2.1 E2 process 250 4.2.2.2 Sulfide passivation 251 4.2.2.3 Reactive material process 252 4.2.2.4 N2IBE process 252 4.2.2.5 I-3 process 254 4.2.2.6 Pulsed UV laser-assisted techniques 255 4.2.2.7 Hydrogenation and silicon hydride barrier layer process 256 4.2.3 Facet protection techniques 258 4.3 Nonabsorbing mirror technologies 259 4.3.1 Concept 259 4.3.2 Window grown on facet 260 4.3.2.1 ZnSe window layer 260 4.3.2.2 AlGaInP window layer 260 4.3.2.3 AlGaAs window layer 261 4.3.2.4 EMOF process 261 4.3.2.5 Disordering ordered InGaP 262 4.3.3 Quantum well intermixing processes 262 4.3.3.1 Concept 262 4.3.3.2 Impurity-induced disordering 263 Ion implantation and annealing 263 Selective diffusion techniques 265 Ion beam intermixing 266 4.3.3.3 Impurity-free vacancy disordering 267 4.3.3.4 Laser-induced disordering 268 4.3.4 Bent waveguide 269 4.4 Further optical strength enhancement approaches 270 4.4.1 Current blocking mirrors and material optimization 270 4.4.1.1 Current blocking mirrors 270 4.4.1.2 Material optimization 272 4.4.2 Heat spreader layer; device mounting; and number of quantum wells 273 4.4.2.1 Heat spreader and device mounting 273 4.4.2.2 Number of quantum wells 273 4.4.3 Mode spot widening techniques 274 References 276 5 Basic reliability engineering concepts 281 Introduction 282 5.1 Descriptive reliability statistics 283 5.1.1 Probability density function 283 5.1.2 Cumulative distribution function 283 5.1.3 Reliability function 284 5.1.4 Instantaneous failure rate or hazard rate 285 5.1.5 Cumulative hazard function 285 5.1.6 Average failure rate 286 5.1.7 Failure rate units 286 5.1.8 Bathtub failure rate curve 287 5.2 Failure distribution functions – statistical models for nonrepairable populations 288 5.2.1 Introduction 288 5.2.2 Lognormal distribution 289 5.2.2.1 Introduction 289 5.2.2.2 Properties 289 5.2.2.3 Areas of application 291 5.2.3 Weibull distribution 291 5.2.3.1 Introduction 291 5.2.3.2 Properties 292 5.2.3.3 Areas of application 294 5.2.4 Exponential distribution 294 5.2.4.1 Introduction 294 5.2.4.2 Properties 295 5.2.4.3 Areas of application 297 5.3 Reliability data plotting 298 5.3.1 Life-test data plotting 298 5.3.1.1 Lognormal distribution 298 5.3.1.2 Weibull distribution 300 5.3.1.3 Exponential distribution 303 5.4 Further reliability concepts 306 5.4.1 Data types 306 5.4.1.1 Time-censored or time-terminated tests 306 5.4.1.2 Failure-censored or failure-terminated tests 307 5.4.1.3 Readout time data tests 307 5.4.2 Confidence limits 307 5.4.3 Mean time to failure calculations 309 5.4.4 Reliability estimations 310 5.5 Accelerated reliability testing – physics–statistics models 310 5.5.1 Acceleration relationships 310 5.5.1.1 Exponential; Weibull; and lognormal distribution acceleration 311 5.5.2 Remarks on acceleration models 312 5.5.2.1 Arrhenius model 313 5.5.2.2 Inverse power law 315 5.5.2.3 Eyring model 316 5.5.2.4 Other acceleration models 318 5.5.2.5 Selection of accelerated test conditions 319 5.6 System reliability calculations 320 5.6.1 Introduction 320 5.6.2 Independent elements connected in series 321 5.6.3 Parallel system of independent components 322 References 323 6 Diode laser reliability engineering program 325 Introduction 325 6.1 Reliability test plan 326 6.1.1 Main purpose; motivation; and goals 326 6.1.2 Up-front requirements and activities 327 6.1.2.1 Functional and reliability specifications 327 6.1.2.2 Definition of product failures 328 6.1.2.3 Failure modes, effects, and criticality analysis 328 6.1.3 Relevant parameters for long-term stability and reliability 330 6.1.4 Test preparations and operation 330 6.1.4.1 Samples; fixtures; and test equipment 330 6.1.4.2 Sample sizes and test durations 331 6.1.5 Overview of reliability program building blocks 332 6.1.5.1 Reliability tests and conditions 334 6.1.5.2 Data collection and master database 334 6.1.5.3 Data analysis and reporting 335 6.1.6 Development tests 336 6.1.6.1 Design verification tests 336 Reliability demonstration tests 336 Step stress testing 337 6.1.6.2 Accelerated life tests 339 Laser chip 339 Laser module 341 6.1.6.3 Environmental stress testing – laser chip 342 Temperature endurance 342 Mechanical integrity 343 Special tests 344 6.1.6.4 Environmental stress testing – subcomponents and module 344 Temperature endurance 345 Mechanical integrity 346 Special tests 346 6.1.7 Manufacturing tests 348 6.1.7.1 Functionality tests and burn-in 348 6.1.7.2 Final reliability verification tests 349 6.2 Reliability growth program 349 6.3 Reliability benefits and costs 350 6.3.1 Types of benefit 350 6.3.1.1 Optimum reliability-level determination 350 6.3.1.2 Optimum product burn-in time 350 6.3.1.3 Effective supplier evaluation 350 6.3.1.4 Well-founded quality control 350 6.3.1.5 Optimum warranty costs and period 351 6.3.1.6 Improved life-cycle cost-effectiveness 351 6.3.1.7 Promotion of positive image and reputation 351 6.3.1.8 Increase in customer satisfaction 351 6.3.1.9 Promotion of sales and future business 351 6.3.2 Reliability–cost tradeoffs 351 References 353 Part 3 Diode Laser Diagnostics 355 Overview 355 7 Novel diagnostic laser data for active layer material integrity; impurity trapping effects; and mirror temperatures 361 Introduction 362 7.1 Optical integrity of laser wafer substrates 362 7.1.1 Motivation 362 7.1.2 Experimental details 363 7.1.3 Discussion of wafer photoluminescence (PL) maps 364 7.2 Integrity of laser active layers 366 7.2.1 Motivation 366 7.2.2 Experimental details 367 7.2.2.1 Radiative transitions 367 7.2.2.2 The samples 369 7.2.2.3 Low-temperature PL spectroscopy setup 369 7.2.3 Discussion of quantum well PL spectra 371 7.2.3.1 Exciton and impurity-related recombinations 371 7.2.3.2 Dependence on thickness of well and barrier layer 373 7.2.3.3 Prelayers for improving active layer integrity 375 7.3 Deep-level defects at interfaces of active regions 376 7.3.1 Motivation 376 7.3.2 Experimental details 377 7.3.3 Discussion of deep-level transient spectroscopy results 382 7.4 Micro-Raman spectroscopy for diode laser diagnostics 386 7.4.1 Motivation 386 7.4.2 Basics of Raman inelastic light scattering 388 7.4.3 Experimental details 391 7.4.4 Raman on standard diode laser facets 394 7.4.5 Raman for facet temperature measurements 395 7.4.5.1 Typical examples of Stokes- and anti-Stokes Raman spectra 396 7.4.5.2 First laser mirror temperatures by Raman 398 7.4.6 Various dependencies of diode laser mirror temperatures 401 7.4.6.1 Laser material 402 7.4.6.2 Mirror surface treatment 403 7.4.6.3 Cladding layers; mounting of laser die; heat spreader; and number of active quantum wells 404 References 406 8 Novel diagnostic laser data for mirror facet disorder effects; mechanical stress effects; and facet coating instability 409 Introduction 410 8.1 Diode laser mirror facet studies by Raman 410 8.1.1 Motivation 410 8.1.2 Raman microprobe spectra 410 8.1.3 Possible origins of the 193 cm−1 mode in (Al)GaAs 412 8.1.4 Facet disorder – facet temperature – catastrophic optical mirror damage robustness correlations 413 8.2 Local mechanical stress in ridge waveguide diode lasers 416 8.2.1 Motivation 416 8.2.2 Measurements – Raman shifts and stress profiles 417 8.2.3 Detection of “weak spots” 419 8.2.3.1 Electron irradiation and electron beam induced current (EBIC) images of diode lasers 419 8.2.3.2 EBIC – basic concept 421 8.2.4 Stress model experiments 422 8.2.4.1 Laser bar bending technique and results 422 8.3 Diode laser mirror facet coating structural instability 424 8.3.1 Motivation 424 8.3.2 Experimental details 424 8.3.3 Silicon recrystallization by internal power exposure 425 8.3.3.1 Dependence on silicon deposition technique 425 8.3.3.2 Temperature rises in ion beam- and plasma enhanced chemical vapor-deposited amorphous silicon coatings 427 8.3.4 Silicon recrystallization by external power exposure –control experiments 428 8.3.4.1 Effect on optical mode and P/I characteristics 429 References 430 9 Novel diagnostic data for diverse laser temperature effects; dynamic laser degradation effects; and mirror temperature maps 433 Introduction 434 9.1 Thermoreflectance microscopy for diode laser diagnostics 435 9.1.1 Motivation 435 9.1.2 Concept and signal interpretation 437 9.1.3 Reflectance–temperature change relationship 439 9.1.4 Experimental details 439 9.1.5 Potential perturbation effects on reflectance 441 9.2 Thermoreflectance versus optical spectroscopies 442 9.2.1 General 442 9.2.2 Comparison 442 9.3 Lowest detectable temperature rise 444 9.4 Diode laser mirror temperatures by micro-thermoreflectance 445 9.4.1 Motivation 445 9.4.2 Dependence on number of active quantum wells 445 9.4.3 Dependence on heat spreader 446 9.4.4 Dependence on mirror treatment and coating 447 9.4.5 Bent-waveguide nonabsorbing mirror 448 9.5 Diode laser mirror studies by micro-thermoreflectance 451 9.5.1 Motivation 451 9.5.2 Real-time temperature-monitored laser degradation 451 9.5.2.1 Critical temperature to catastrophic optical mirror damage 451 9.5.2.2 Development of facet temperature with operation time 453 9.5.2.3 Temperature associated with dark-spot defects in mirror facets 454 9.5.3 Local optical probe 455 9.5.3.1 Threshold and heating distribution within near-field spot 455 9.6 Diode laser cavity temperatures by micro-electroluminescence 456 9.6.1 Motivation 456 9.6.2 Experimental details – sample and setup 456 9.6.3 Temperature profiles along laser cavity 457 9.7 Diode laser facet temperature – two-dimensional mapping 460 9.7.1 Motivation 460 9.7.2 Experimental concept 460 9.7.3 First temperature maps ever 460 9.7.4 Independent temperature line scans perpendicular to the active layer 461 9.7.5 Temperature modeling 462 9.7.5.1 Modeling procedure 463 9.7.5.2 Modeling results and discussion 465 References 466 Index 469
£85.46
The University of North Carolina Press Microwave and RF Design Volume 1
Book SynopsisProvides a circuits- and systems-oriented approach to modern microwave and RF systems. Sufficient details at the circuits and sub-system levels are provided to understand how modern radios are implemented. Design is emphasized throughout.
£14.36
