Description

Book Synopsis
This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.
After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.

Table of Contents

Chapter 1. The Thermodynamic Approach 1
Emmanuel DEFAŸ

1.1. Background 1

1.2. The functions of state 2

1.3. Linear equations, piezoelectricity 6

1.4. Nonlinear equations, electrostriction 8

1.5. Thermodynamic modeling of the ferroelectric–paraelectric phase transition 9

1.6. Conclusion 24

1.7. Bibliography 25

Chapter 2. Stress Effect on Thin Films 27
Pierre-Eymeric JANOLIN

2.1. Introduction 27

2.2. Modeling the system under consideration 27

2.3. Temperature–misfit strain phase diagrams for monodomain films 28

2.4. Domain stability map 35

2.5. Temperature–misfit strain phase diagram for polydomain films 48

2.6. Discussion of the nature of the “misfit strain” 50

2.7. Conclusion 52

2.8. Experimental validation of phase diagrams: state of the art 52

2.9. Case study 53

2.10. Results 53

2.11. Comparison between the experimental data and the temperature–misfit strain phase diagrams 60

2.12. Conclusion 65

2.13. Bibliography 66

Chapter 3. Deposition and Patterning Technologies 71
Chrystel DEGUET, Gwenaël LE RHUN, Bertrand VILQUIN and Emmanuel DEFAŸ

3.1. Deposition method 71

3.2. Etching 86

3.3. Contamination 86

3.4. Monocrystalline thin-film transfer 87

3.5. Design of experiments 96

3.6. Conclusion 107

3.7. Bibliography 108

Chapter 4. Analysis Through X-ray Diffraction of Polycrystalline Thin Films 111
Patrice GERGAUD

4.1. Introduction 111

4.2. Some reminders of x-ray diffraction and crystallography 112

4.3. Application to powder or polycrystalline thin-films 122

4.4. Phase analysis by X-ray diffraction 126

4.5. Identification of coherent domain sizes of diffraction and micro-strains 132

4.6. Identification of crystallographic textures by X-ray diffraction 139

4.7. Determination of strains/stresses by X-ray diffraction 146

4.8. Bibliography 156

Chapter 5. Physicochemical and Electrical Characterization 159
Gwenaël LE RHUN, Brahim DKHIL and Pascale GEMEINER

5.1. Introduction 159

5.2. Useful characterization techniques 159

5.3. Ferroelectric measurement 170

5.4. Dielectric measurement 177

5.5. Bibliography 180

Chapter 6. Radio-Frequency Characterization 183
Thierry LACREVAZ

6.1. Introduction 183

6.2. Notions and basic concepts associated with HF 184

6.3. Frequency analysis: HF characterization of materials 204

6.4. Bibliography 211

Chapter 7. Leakage Currents in PZT Capacitors 213
Emilien BOUYSSOU

7.1. Introduction 213

7.2. Leakage current in metal/insulator/metal structures 215

7.3. Problem of leakage current measurement 225

7.4. Characterization of the relaxation current 233

7.5. Literature review of true leakage current in PZT 237

7.6. Dynamic characterization of true leakage current: I(t, T) 239

7.7. Static characterization of the true leakage current: I(V,T) 263

7.8. Conclusion 273

7.9. Bibliography 275

Chapter 8. Integrated Capacitors 281
Emmanuel DEFAŸ

8.1. Introduction 281

8.2. Potentiality of perovskites for RF devices: permittivity and losses 283

8.3. Bi-dielectric capacitors with high linearity 294

8.4. STO capacitors integrated on CMOS substrate by AIC technology 298

8.5. Bibliography 303

Chapter 9. Reliability of PZT Capacitors 305
Emilien BOUYSSOU

9.1. Introduction 305

9.2. Accelerated aging of metal/insulator/metal structures 307

9.3. Accelerated aging of PZT capacitors through CVS tests 316

9.4. Lifetime extrapolation of PZT capacitors 325

9.5. Conclusion 335

9.6. Bibliography 336

Chapter 10. Ferroelectric Tunable Capacitors 341
Benoit GUIGUES

10.1. Introduction 341

10.2. Overview of the tunable capacitors 342

10.3. Types of actual tunable capacitors 355

10.4. Toward new tunable capacitors 366

10.5. Bibliography 375

Chapter 11. FRAM Ferroelectric Memories: Basic Operations, Limitations, Innovations and Applications 379
Christophe MULLER

11.1. Taxonomy of non-volatile memories 379

11.2. FRAM memories: basic operations and limitations 383

11.3. Technologies available in 2011 387

11.4. Technological innovations 388

11.5. Some application areas of FRAM technology 394

11.6. Conclusion 396

11.7. Bibliography 397

Chapter 12. Integration of Multiferroic BiFeO3 Thin Films into Modern Microelectronics 403
Xiaohong ZHU

12.1. Introduction 403

12.2. Preparation methods 407

12.3. Ferroelectricity and magnetism 416

12.4. Device applications 427

12.5. Bibliography 436

List of Authors 443

Index 445

Ferroelectric Dielectrics Integrated on Silicon

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      Publisher: ISTE Ltd and John Wiley & Sons Inc
      Publication Date: 25/10/2011
      ISBN13: 9781848213135, 978-1848213135
      ISBN10: 1848213131

      Description

      Book Synopsis
      This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.
      After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.

      Table of Contents

      Chapter 1. The Thermodynamic Approach 1
      Emmanuel DEFAŸ

      1.1. Background 1

      1.2. The functions of state 2

      1.3. Linear equations, piezoelectricity 6

      1.4. Nonlinear equations, electrostriction 8

      1.5. Thermodynamic modeling of the ferroelectric–paraelectric phase transition 9

      1.6. Conclusion 24

      1.7. Bibliography 25

      Chapter 2. Stress Effect on Thin Films 27
      Pierre-Eymeric JANOLIN

      2.1. Introduction 27

      2.2. Modeling the system under consideration 27

      2.3. Temperature–misfit strain phase diagrams for monodomain films 28

      2.4. Domain stability map 35

      2.5. Temperature–misfit strain phase diagram for polydomain films 48

      2.6. Discussion of the nature of the “misfit strain” 50

      2.7. Conclusion 52

      2.8. Experimental validation of phase diagrams: state of the art 52

      2.9. Case study 53

      2.10. Results 53

      2.11. Comparison between the experimental data and the temperature–misfit strain phase diagrams 60

      2.12. Conclusion 65

      2.13. Bibliography 66

      Chapter 3. Deposition and Patterning Technologies 71
      Chrystel DEGUET, Gwenaël LE RHUN, Bertrand VILQUIN and Emmanuel DEFAŸ

      3.1. Deposition method 71

      3.2. Etching 86

      3.3. Contamination 86

      3.4. Monocrystalline thin-film transfer 87

      3.5. Design of experiments 96

      3.6. Conclusion 107

      3.7. Bibliography 108

      Chapter 4. Analysis Through X-ray Diffraction of Polycrystalline Thin Films 111
      Patrice GERGAUD

      4.1. Introduction 111

      4.2. Some reminders of x-ray diffraction and crystallography 112

      4.3. Application to powder or polycrystalline thin-films 122

      4.4. Phase analysis by X-ray diffraction 126

      4.5. Identification of coherent domain sizes of diffraction and micro-strains 132

      4.6. Identification of crystallographic textures by X-ray diffraction 139

      4.7. Determination of strains/stresses by X-ray diffraction 146

      4.8. Bibliography 156

      Chapter 5. Physicochemical and Electrical Characterization 159
      Gwenaël LE RHUN, Brahim DKHIL and Pascale GEMEINER

      5.1. Introduction 159

      5.2. Useful characterization techniques 159

      5.3. Ferroelectric measurement 170

      5.4. Dielectric measurement 177

      5.5. Bibliography 180

      Chapter 6. Radio-Frequency Characterization 183
      Thierry LACREVAZ

      6.1. Introduction 183

      6.2. Notions and basic concepts associated with HF 184

      6.3. Frequency analysis: HF characterization of materials 204

      6.4. Bibliography 211

      Chapter 7. Leakage Currents in PZT Capacitors 213
      Emilien BOUYSSOU

      7.1. Introduction 213

      7.2. Leakage current in metal/insulator/metal structures 215

      7.3. Problem of leakage current measurement 225

      7.4. Characterization of the relaxation current 233

      7.5. Literature review of true leakage current in PZT 237

      7.6. Dynamic characterization of true leakage current: I(t, T) 239

      7.7. Static characterization of the true leakage current: I(V,T) 263

      7.8. Conclusion 273

      7.9. Bibliography 275

      Chapter 8. Integrated Capacitors 281
      Emmanuel DEFAŸ

      8.1. Introduction 281

      8.2. Potentiality of perovskites for RF devices: permittivity and losses 283

      8.3. Bi-dielectric capacitors with high linearity 294

      8.4. STO capacitors integrated on CMOS substrate by AIC technology 298

      8.5. Bibliography 303

      Chapter 9. Reliability of PZT Capacitors 305
      Emilien BOUYSSOU

      9.1. Introduction 305

      9.2. Accelerated aging of metal/insulator/metal structures 307

      9.3. Accelerated aging of PZT capacitors through CVS tests 316

      9.4. Lifetime extrapolation of PZT capacitors 325

      9.5. Conclusion 335

      9.6. Bibliography 336

      Chapter 10. Ferroelectric Tunable Capacitors 341
      Benoit GUIGUES

      10.1. Introduction 341

      10.2. Overview of the tunable capacitors 342

      10.3. Types of actual tunable capacitors 355

      10.4. Toward new tunable capacitors 366

      10.5. Bibliography 375

      Chapter 11. FRAM Ferroelectric Memories: Basic Operations, Limitations, Innovations and Applications 379
      Christophe MULLER

      11.1. Taxonomy of non-volatile memories 379

      11.2. FRAM memories: basic operations and limitations 383

      11.3. Technologies available in 2011 387

      11.4. Technological innovations 388

      11.5. Some application areas of FRAM technology 394

      11.6. Conclusion 396

      11.7. Bibliography 397

      Chapter 12. Integration of Multiferroic BiFeO3 Thin Films into Modern Microelectronics 403
      Xiaohong ZHU

      12.1. Introduction 403

      12.2. Preparation methods 407

      12.3. Ferroelectricity and magnetism 416

      12.4. Device applications 427

      12.5. Bibliography 436

      List of Authors 443

      Index 445

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