Electronic devices and materials Books
Taylor & Francis Ltd Laser Precision Microprocessing of Materials
Book SynopsisThis reference focuses on the current state of fundamental research and industrial achievements in the field of precision laser processing of a wide range of metal, semiconductor and dielectric materials. The possibilities of microprocessing by pulsed nanosecond laser radiation and copper vapor laser systems are analyzed. Design and operation principles, ways to increase their efficiency and reliability, and a series of modern automated technological installations are described. The work will be of interest to specialists, engineers, students and graduate students working and studying in the field of laser technology and optics, laser and information technology. Table of ContentsIntroduction. Overview of the current state and development of pulsed copper vapor laser (CVL) and copper vapor laser processing systems (CVLPS). Possibilities of pulsed CVL and CVLPS for microprocessing of materials. A new generation of high-performance and durable industrial sealed active element pulsed CVL of the series "Coulomb" with a radiation power of 1-20 W and "Crystal" with a power of 30-100 W. Highly selective optical systems for the formation in CVL and CVLPS of single-beam radiation of diffraction quality and with stable parameters. Industrial technological CVL and CVLPS on the basis of a new generation of sealed active elements and new optical systems. Advanced Caravel automatic laser processing systems. Laser technologies of precision microprocessing of foil and thin sheet materials for electronic components. The use of industrial automatic laser processing systems "Caravel-1", "Caravel-1M", "Caravel-2" and "Caravel-2M" for the manufacture of precision parts of electronic components.
£218.50
Taylor & Francis Ltd Handbook for IIIV High Electron Mobility
Book SynopsisThis book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTsTable of Contents1. Motivation Behind High Electron Mobility Transistors 2. Introduction to High Electron Mobility Transistors 3. HEMT Material Technology and Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6. AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9. Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs 12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave Applications 15. Metal Oxide Semiconductor High Electron Mobility Transistors 16. Double Gate High Electron Mobility Transistors
£166.25
Cambridge University Press Plasma Processes for Fabrication 8 Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Series Number 8
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£66.68
Cambridge University Press Hydrogenated Amorphous Silicon
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£87.38
Cambridge University Press HighSpeed Heterostructure Devices
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£110.20
Cambridge University Press Photoinduced Defects Semiconductrs 4 Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Series Number 4
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£46.54
Cambridge University Press Phys Appl Resonant Tunnelling Diods 2 Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Series Number 2
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£45.59
Cambridge University Press Electronic and Optoelectronic Properties of Semiconductor Structures
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£54.14
Cambridge University Press Electronic Composites
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£46.54
Cambridge University Press Higher Order Logic and Hardware Verification
Book SynopsisThis 1993 book shows how formal logic can be used to specify the behaviour of hardware designs and reason about their correctness. The book is based in part on the author's own research as well as on graduate teaching. Thus it can be used to accompany courses on hardware verification and as a resource for research workers.Table of Contents1. Introduction; 2. Higher order logic and the HOL system; 3. Hardware verification using higher order logic; 4. Abstraction; 5. Data abstraction; 6. Temporal abstraction; 7. Abstraction between models; 8. Conclusions and future work; Appendices; References.
£36.87
Cambridge University Press Focused Ion Beam Systems Basics and Applications
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£52.60
Cambridge University Press Rate Equations in Semiconductor Electronics
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£82.64
Cambridge University Press Hydrogenated Amorphous Silicon
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£144.90
Cambridge University Press Rate Equations in Semiconductor Electronics
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£34.19
Cambridge University Press Nonlinear SpatioTemporal Dynamics and Chaos in Semiconductors 10 Cambridge Nonlinear Science Series Series Number 10
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£143.10
Cambridge University Press The Physics of LowDimensional Semiconductors
Book SynopsisIntroduces the principles underlying low-dimensional semiconductors by describing two systems in detail: the two-dimensional electron gas and the quantum well. It will be valuable to advanced undergraduate and beginning graduate physics or electrical engineering students studying low-dimensional systems or heterostructure device physics.Table of ContentsPreface; Introduction; 1. Foundations; 2. Electrons and phonons in crystals; 3. Heterostructures; 4. Quantum wells and low-dimensional systems; 5. Tunnelling transport; 6. Electric and magnetic fields; 7. Approximate methods; 8. Scattering rates: the Golden Rule; 9. The two-dimensional electron gas; 10. Optical properties of quantum wells; Appendix 1. Table of physical constants; Appendix 2. Properties of important semiconductors; Appendix 3. Properties of GaAs-AlAs alloys at room temperature; Appendix 4. Hermite's equation: harmonic oscillator; Appendix 5. Airy functions: triangular well; Appendix 6. Kramers-Kronig relations and response functions; Bibliography.
£118.75
Cambridge University Press The Physics of Lowdimensional Semiconductors An
Book SynopsisThe composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book inTable of ContentsPreface; Introduction; 1. Foundations; 2. Electrons and phonons in crystals; 3. Heterostructures; 4. Quantum wells and low-dimensional systems; 5. Tunnelling transport; 6. Electric and magnetic fields; 7. Approximate methods; 8. Scattering rates: the Golden Rule; 9. The two-dimensional electron gas; 10. Optical properties of quantum wells; Appendix 1. Table of physical constants; Appendix 2. Properties of important semiconductors; Appendix 3. Properties of GaAs-AlAs alloys at room temperature; Appendix 4. Hermite's equation: harmonic oscillator; Appendix 5. Airy functions: triangular well; Appendix 6. Kramers-Kronig relations and response functions; Bibliography.
£66.49
Cambridge University Press Electrons and Phonons in Semiconductor Multilayers
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£82.65
Cambridge University Press Nanoscale MOS Transistors
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£112.10
Cambridge University Press Carbon Nanotube and Graphene Device Physics
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£72.19
Cambridge University Press Quantum Theory of the Electron Liquid
Book SynopsisModern electronic devices and novel materials often derive their extraordinary properties from the intriguing, complex behavior of large numbers of electrons forming what is known as an electron liquid. This book provides an in-depth introduction to the physics of the interacting electron liquid in a broad variety of systems, including metals, semiconductors, artificial nano-structures, atoms and molecules. One, two and three dimensional systems are treated separately and in parallel. Different phases of the electron liquid, from the Landau Fermi liquid to the Wigner crystal, from the Luttinger liquid to the quantum Hall liquid are extensively discussed. Both static and time-dependent density functional theory are presented in detail. Although the emphasis is on the development of the basic physical ideas and on a critical discussion of the most useful approximations, the formal derivation of the results is highly detailed and based on the simplest, most direct methods.Trade Review'All in all, this is an excellent book with the bonus of a useful selection of exercises to test the reader's understanding. … for those with stamina, and a zest for getting to the bottom of how nature really operates, study of this book will certainly repay the effort.' Chemistry World'This book contains a wealth of information that will repay diligent study, much of it not to be found together in any other graduate textbook.' The Times Higher Education Supplement'The book, unquestionably attractive to the more experienced reader… is an invaluable source of material for many-body theory as a part of condensed matter physics graduate courses. The book contains sophisticated and important concepts, such as spin-dependant effective electronic interactions, a subject virtually impossible to find in other textbooks. Every graduate student and researcher studying condensed matter theory should obtain a copy of this exceptional text.' Physics TodayTable of Contents1. Introduction to the electron liquid; 2. The Hartree-Fock approximation; 3. Linear response theory; 4. Linear response of independent electrons; 5. Linear response of an interacting electron liquid; 6. The perturbative calculation of linear response functions; 7. Density functional theory; 8. The normal Fermi liquid; 9. The one-dimensional electron gas and the Luttinger liquid; 10. The two-dimensional electron gas at high magnetic field.
£72.19
Cambridge University Press Thin Film Materials
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£62.69
Cambridge University Press Recombination in Semiconductors
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£59.22
Cambridge University Press Introduction to Quantum Optics From the Semiclassical Approach to Quantized Light
Book SynopsisCovering a number of important subjects in quantum optics, this textbook is an excellent introduction for advanced undergraduate and beginning graduate students, familiarizing readers with the basic concepts and formalism as well as the most recent advances. The first part of the textbook covers the semi-classical approach where matter is quantized, but light is not. It describes significant phenomena in quantum optics, including the principles of lasers. The second part is devoted to the full quantum description of light and its interaction with matter, covering topics such as spontaneous emission, and classical and non-classical states of light. An overview of photon entanglement and applications to quantum information is also given. In the third part, non-linear optics and laser cooling of atoms are presented, where using both approaches allows for a comprehensive description. Each chapter describes basic concepts in detail, and more specific concepts and phenomena are presented in Trade Review'The advantage of this book is to give both [the semi-classical and the full quantum] approaches, starting with the first, illustrated by several simple examples, and introducing progressively the second, clearly showing why it is essential for understanding certain phenomena … I believe that this challenge to present and to illustrate both approaches in a single book has been taken up successfully … I have the highest admiration for [the authors'] enthusiasm, their scientific rigor, their ability to give simple and precise physical explanations, and their quest to illuminate clearly the difficult points of the subject without oversimplification.' Claude Cohen-Tannoudji, from the Foreword'… genuinely very impressive … every section has been lovingly crafted, the text is beautifully constructed and the theory explained more comprehensibly than almost any other text I could name. Each section is graced by numerous insightful … comments from the authors, giving the reader the impression of guidance by the hand of a teacher you can utterly trust. For a start, this book has possibly the finest, clearest and most extensive introduction to perturbative transitions I have seen … I am certain that this beautifully produced and written book, with an apparently faultless production, is destined to be a classic.' Professor David L. Andrews, University of East AngliaTable of ContentsPart I. Semi-Classical Description of Matter-Light Interaction: 1. The evolution of interacting quantum systems; 2. The semi-classical approach: atoms interacting with a classical electromagnetic field; 3. Principles of lasers; Part II. Quantum Description of Light and its Interaction with Matter: 4. Quantisation of free radiation; 5. Free quantum radiation; 6. Interaction of an atom with the quantised electromagnetic field; Part III. Applying Both Approaches: 7. Non-linear optics: from the semi-classical approach to quantum effects; 8. Laser manipulation of atoms: from incoherent atom optics to atom lasers; References; Index.
£64.59
Cambridge University Press Low Dimensional Semiconductor Structures
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£115.90
Cambridge University Press Plasma Processes for Semiconductor Fabrication 8 Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Series Number 8
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£118.75
Cambridge University Press LowDimensional Semiconductor Structures
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£84.54
Cambridge University Press Electron Microprobe Analysis
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£48.44
Cambridge University Press Silicon Micromachining
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£62.54
Cambridge University Press Quantum Heterostructures
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£155.70
Cambridge University Press Quantum Heterostructures
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£89.29
Cambridge University Press Fundamentals of Carrier Transport
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£78.84
Cambridge University Press Inertial MEMS
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£139.65
Cambridge University Press Modern Introduction to Surface Plasmons
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£83.59
Cambridge University Press Microprocessor Architecture From Simple Pipelines to Chip Multiprocessors
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£68.39
Cambridge University Press Extended Defects in Semiconductors
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£126.35
Cambridge University Press Probability Distributions Involving Gaussian Random Variables A Handbook for Engineers Scientists and Mathematicians A Handbook for Engineers and Series in Engineering and Computer Science
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£54.14
Cambridge University Press Thin Film Materials
Book SynopsisThin film mechanical behavior and stress presents a technological challenge for materials scientists, physicists and engineers. Describing fundamental concepts with practical case studies, highly illustrated, thorough referencing and containing numerous homework problems, this book will be essential for graduate courses on thin films and the classic reference for researchers.Trade Review'The book is a landmark in a rich subject which has seen many developments over the past decade. In addition to being beautifully written, the book contains many illustrations, micrographs, and problems for students. The book will serve as a graduate text, as well as a comprehensive monograph everyone working in the field will want to own.' Professor John W. Hutchinson, Harvard University'Freund and Suresh have written a masterpiece on thin film materials that will become a classic reference for this newly developed field. Their book provides an organized and beautifully written exposition of the subject of thin film mechanical behavior. For the first time there is a single starting point for the field. The book brings together materials and mechanics aspects of thin films effortlessly, reflecting the authors' expertise in joining these fields of science and engineering.' Professor William D. Nix, Stanford University'I would heartily recommend this book as an essential read for anyone working in any area of thin film deposition.' Materials World'Thin Film Materials will prove a valuable resource. It contains a wealth of useful references and good indexes. It is richly illustrated, and there are good exercises after each chapter. For a graduate course in the field, it will be hard to beat. And if the authors are right, there will be a growing demand for such courses.' The Times Higher Education SupplementTable of Contents1. Introduction and overview; 2. Film stress and substrate curvature; 3. Stress in anisotropic and patterned films; 4. Delamination and fracture; 5. Film buckling, bulging and peeling; 6. Dislocation formation in epitaxial systems; 7. Dislocation interactions and strain relaxation; 8. Equilibrium and stability of surfaces; 9. The role of stress in mass transport.
£75.05
Cambridge University Press Laser Dynamics
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£86.44
Cambridge University Press Focused Ion Beam Systems Basics and Applications
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£82.65
Cambridge University Press Quantum Transport Introduction to Nanoscience
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£89.29
Cambridge University Press Modeling and Characterization of RF and Microwave Power FETs
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£110.20
Cambridge University Press Transport in Nanostructures
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£85.49
Cambridge University Press Classical Optics and Its Applications
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£73.14
Cambridge University Press Thin Film Shape Memory Alloys Fundamentals and Device Applications
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£91.19
Cambridge University Press Field Theory of NonEquilibrium Systems
Book SynopsisThis book provides a detailed presentation of modern non-equilibrium field-theoretical methods, applied to examples ranging from biophysics to the kinetics of superfluids and superconductors. Suitable for graduate students and researchers in condensed matter physics, this new edition includes updated content and problems throughout.Trade ReviewPraise for the first edition 'Field Theory of Non-Equilibrium Systems, written by theoretical condensed-matter physicist Alex Kamenev, is a lively pedagogical exposition of the Keldysh technique based on functional integration … It is meant for advanced graduate students and professionals who have not had prior exposure to the technique but would like to learn it. Experts in the field may also enjoy the diversity of the subjects covered and the clarity with which they are presented. Thanks to those features, Field Theory of Non-Equilibrium Systems is a welcome introduction to the field and could well become a classic.' Vojkan Jaksic, Physics TodayTable of Contents1. Introduction; Part I. Systems with Few Degrees of Freedom: 2. Bosons; 3. Single-particle quantum mechanics; 4. Classical stochastic systems; 5. Driven-dissipative systems; Part II. Bosonic and Classical Fields: 6. Bosonic fields; 7. Dynamics of collisionless plasma; 8. Kinetics of Bose condensates; 9. Dynamics of phase transitions; Part III. Fermions: 10. Fermions; 11. Kinetic theory and hydrodynamics; 12. Aspects of kinetic theory; 13. Quantum transport; Part IV. Disordered Metals and Superconductors: 14. Disordered fermionic systems; 15. Mesoscopic effects; 16. Electron–electron interactions in disordered metals; 17. Dynamics of disordered superconductors; 18. Electron–phonon interactions; References; Index.
£66.49
Cambridge University Press Alternating Currents in Theory and Practice
Book SynopsisOriginally published in 1916, as part of the Cambridge Technical Series, this book was written to provide a guide to the laws governing the flow of alternating currents in circuits and an account regarding different types of alternating current machines. Illustrative figures are included.Table of ContentsPreface; 1. Preliminary considerations; 2. Inductance; 3. The flow of single phase alternating currents in circuits possessing resistance, inductance and capacity; 4. Power in alternating current circuits; 5. Multiphase currents; 6. Instruments for use on alternating current circuits; 7. Alternators; 8. Static transformers; 9. Induction motors; 10. Converting plant; 11. Switchgear and protective appliances; high tension transmission; Index.
£38.99
Pearson Education Solid State Electronic Devices
Book Synopsis Ben G. Streetman is Dean Emeritus of the College of Engineering at The University of Texas at Austin. He is an Emeritus Professor of Electrical and Computer Engineering, where he held the Dula D. Cockrell Centennial Chair. He was the founding Director of the Microelectronics Research Center (198496). His teaching and research interests involve semiconductor materials and devices. After receiving a Ph.D. from The University of Texas at Austin (1966) he was on the faculty (19661982) of the University of Illinois at Urbana-Champaign. He returned to The University of Texas at Austin in 1982. His honors include the Education Medal of the Institute of Electrical and Electronics Engineers (IEEE), the Frederick Emmons Terman Medal of the American Society for Engineering Education (ASEE), and the Heinrich Welker Medal from the International Conference on Compound Semiconductors. He is a member of the National Academy of Engineering and the American Academy of Table of Contents ABOUT THE AUTHORS XvII 1 CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS 1 1.1 Semiconductor Materials 1 1.2 Crystal Lattices 3 1.3 Bulk Crystal Growth 12 1.4 epitaxial Growth 17 1.2.1 Periodic Structures 3 1.2.2 Cubic Lattices 5 1.2.3 Planes and directions 7 1.2.4 The diamond Lattice 9 1.3.1 Starting Materials 12 1.3.2 Growth of Single-Crystal Ingots 13 1.3.3 wafers 14 1.3.4 doping 16 1.4.1 Lattice-Matching in epitaxial Growth 17 1.4.2 vapor-Phase epitaxy 19 1.4.3 Molecular Beam epitaxy 22 1.5 wave Propagation in discrete, Periodic Structures 24 2 ATOMS AND ELECTRONS 32 2.1 Introduction to Physical Models 33 2.2 experimental Observations 34 2.3 The Bohr Model 37 2.4 Quantum Mechanics 41 2.2.1 The Photoelectric effect 34 2.2.2 Atomic Spectra 36 2.5 Atomic Structure and the Periodic Table 49 2.4.1 Probability and the Uncertainty Principle 41 2.4.2 The Schrödinger wave equation 43 2.4.3 Potential well Problem 45 2.4.4 Tunneling 48 2.5.1 The hydrogen Atom 50 2.5.2 The Periodic Table 52 3 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS 63 3.1 Bonding Forces and energy Bands in Solids 63 3.2 Charge Carriers in Semiconductors 74 3.3 Carrier Concentrations 89 3.4 drift of Carriers in electric and Magnetic Fields 100 3.1.1 Bonding Forces in Solids 64 3.1.2 energy Bands 66 3.1.3 Metals, Semiconductors, and Insulators 69 3.1.4 direct and Indirect Semiconductors 70 3.1.5 variation of energy Bands with Alloy Composition 72 3.2.1 electrons and holes 74 3.2.2 effective Mass 79 3.2.3 Intrinsic Material 83 3.2.4 extrinsic Material 84 3.2.5 electrons and holes in Quantum wells 87 3.3.1 The Fermi Level 89 3.3.2 electron and hole Concentrations at equilibrium 92 3.3.3 Temperature dependence of Carrier Concentrations 97 3.3.4 Compensation and Space Charge neutrality 99 3.4.1 Conductivity and Mobility 100 3.4.2 drift and Resistance 105 3.4.3 effects of Temperature and doping on Mobility 106 3.4.4 high-Field effects 109 3.4.5 The hall effect 109 3.5 Invariance of the Fermi Level at equilibrium 111 4 EXCESS CARRIERS IN SEMICONDUCTORS 122 4.1 Optical Absorption 122 4.2 Luminescence 125 4.3 Carrier Lifetime and Photoconductivity 128 4.4 diffusion of Carriers 137 4.2.1 Photoluminescence 126 4.2.2 electroluminescence 128 4.3.1 direct Recombination of electrons and holes 129 4.3.2 Indirect Recombination; Trapping 131 4.3.3 Steady State Carrier Generation; Quasi-Fermi Levels 134 4.3.4 Photoconductive devices 136 4.4.1 diffusion Processes 138 4.4.2 diffusion and drift of Carriers; Built-in Fields 140 4.4.3 diffusion and Recombination; The Continuity equation 143 4.4.4 Steady State Carrier Injection; diffusion Length 145 4.4.5 The haynes–Shockley experiment 147 4.4.6 Gradients in the Quasi-Fermi Levels 150 5 JUNCTIONS159 5.1 Fabrication of p-n Junctions 159 5.2 equilibrium Conditions 174 5.3 Forward- and Reverse-Biased 5.4 Reverse-Bias Breakdown 200 5.5 Transient and A-C Conditions 209 5.6 deviations from the Simple Theory 222 5.7 Metal–Semiconductor Junctions 231 5.1.1 Thermal Oxidation 160 5.1.2 diffusion 161 5.1.3 Rapid Thermal Processing 163 5.1.4 Ion Implantation 164 5.1.5 Chemical vapor deposition (Cvd) 167 5.1.6 Photolithography 168 5.1.7 etching 171 5.1.8 Metallization 173 5.2.1 The Contact Potential 175 5.2.2 equilibrium Fermi Levels 180 5.2.3 Space Charge at a Junction 180 Junctions; Steady State Conditions 185 5.3.1 Qualitative description of Current Flow at a Junction 185 5.3.2 Carrier Injection 189 5.3.3 Reverse Bias 198 5.4.1 Zener Breakdown 201 5.4.2 Avalanche Breakdown 202 5.4.3 Rectifiers 205 5.4.4 The Breakdown diode 208 5.5.1 Time variation of Stored Charge 209 5.5.2 Reverse Recovery Transient 212 5.5.3 Switching diodes 216 5.5.4 Capacitance of p-n Junctions 216 5.5.5 The varactor diode 221 5.6.1 effects of Contact Potential on Carrier Injection 223 5.6.2 Recombination and Generation in the Transition Region 225 5.6.3 Ohmic Losses 227 5.6.4 Graded Junctions 228 5.7.1 Schottky Barriers 231 5.7.2 Rectifying Contacts 233 5.7.3 Ohmic Contacts 235 5.7.4 Typical Schottky Barriers 237 5.8 heterojunctions 238 6 FIELD-EFFECT TRANSISTORS 257 6.1 Transistor Operation 258 6.2 The Junction FeT 260 6.3 The Metal—Semiconductor FeT 267 6.4 The Metal—Insulator—Semiconductor FeT 271 6.5 The MOS Field-effect Transistor 299 6.6 Advanced MOSFeT Structures 330 6.1.1 The Load Line 258 6.1.2 Amplification and Switching 259 6.2.1 Pinch-off and Saturation 261 6.2.2 Gate Control 263 6.2.3 Current—voltage Characteristics 265 6.3.1 The GaAs MeSFeT 267 6.3.2 The high electron Mobility Transistor (heMT) 268 6.3.3 Short Channel effects 270 6.4.1 Basic Operation and Fabrication 271 6.4.2 The Ideal MOS Capacitor 275 6.4.3 effects of Real Surfaces 286 6.4.4 Threshold voltage 289 6.4.5 MOS Capacitance—voltage Analysis 291 6.4.6 Time-dependent Capacitance Measurements 295 6.4.7 Current—voltage Characteristics of MOS Gate Oxides 296 6.5.1 Output Characteristics 299 6.5.2 Transfer Characteristics 302 6.5.3 Mobility Models 305 6.5.4 Short Channel MOSFeT I—V Characteristics 307 6.5.5 Control of Threshold voltage 309 6.5.6 Substrate Bias effects–the “body” effect 312 6.5.7 Subthreshold Characteristics 316 6.5.8 equivalent Circuit for the MOSFeT 318 6.5.9 MOSFeT Scaling and hot electron effects 321 6.5.10 drain-Induced Barrier Lowering 325 6.5.11 Short Channel effect and narrow width effect 327 6.5.12 Gate-Induced drain Leakage 329 6.6.1 Metal Gate-high-k 330 6.6.2 enhanced Channel Mobility Materials and Strained Si FeTs 331 6.6.3 SOI MOSFeTs and FinFeTs 333 7 BIPOLAR JUNCTION TRANSISTORS 348 7.1 Fundamentals of BJT Operation 348 7.2 Amplification with BJTs 352 7.3 BJT Fabrication 355 7.4 Minority Carrier distributions and Terminal Currents 358 7.5 Generalized Biasing 367 7.6 Switching 375 7.7 Other Important effects 380 7.8 Frequency Limitations of Transistors 394 7.4.1 Solution of the diffusion equation in the Base Region 359 7.4.2 evaluation of the Terminal Currents 361 7.4.3 Approximations of the Terminal Currents 364 7.4.4 Current Transfer Ratio 366 7.5.1 The Coupled-diode Model 368 7.5.2 Charge Control Analysis 373 7.6.1 Cutoff 376 7.6.2 Saturation 377 7.6.3 The Switching Cycle 378 7.6.4 Specifications for Switching Transistors 379 7.7.1 drift in the Base Region 381 7.7.2 Base narrowing 382 7.7.3 Avalanche Breakdown 383 7.7.4 Injection Level; Thermal effects 385 7.7.5 Base Resistance and emitter Crowding 386 7.7.6 Gummel—Poon Model 388 7.7.7 Kirk effect 391 7.8.1 Capacitance and Charging Times 394 7.8.2 Transit Time effects 397 7.8.3 webster effect 398 7.8.4 high-Frequency Transistors 398 7.9 heterojunction Bipolar Transistors 400 8 OPTOELECTRONIC DEVICES 410 8.1 Photodiodes 410 8.1.1 Current and voltage in an Illuminated Junction 411 8.1.2 Solar Cells 414 8.1.3 Photodetectors 417 8.1.4 Gain, Bandwidth, and Signal-to-noise Ratio of Photodetectors 419 8.2 Light-emitting diodes 422 8.3 Lasers 430 8.4 Semiconductor Lasers 434 8.2.1 Light-emitting Materials 423 8.2.2 Fiber-Optic Communications 427 8.4.1 Population Inversion at a Junction 435 8.4.2 emission Spectra for p-n Junction Lasers 437 8.4.3 The Basic Semiconductor Laser 438 8.4.4 heterojunction Lasers 439 8.4.5 Materials for Semiconductor Lasers 442 8.4.6 Quantum Cascade Lasers 444 9 INTEGRATED CIRCUITS 452 9.1 Background 453 9.2 evolution of Integrated Circuits 456 9.3 Monolithic device elements 459 9.1.1 Advantages of Integration 453 9.1.2 Types of Integrated Circuits 455 9.4 Charge Transfer devices 480 9.5 Ultra Large-Scale Integration (ULSI) 485 9.6 Testing, Bonding, and Packaging 510 9.3.1 CMOS Process Integration 459 9.3.2 Integration of Other Circuit elements 474 9.4.1 dynamic effects in MOS Capacitors 481 9.4.2 The Basic CCd 482 9.4.3 Improvements on the Basic Structure 483 9.4.4 Applications of CCds 484 9.5.1 Logic devices 489 9.5.2 Semiconductor Memories 497 9.6.1 Testing 511 9.6.2 wire Bonding 511 9.6.3 Flip-Chip Techniques 515 9.6.4 Packaging 515 10 HIGH-FREQUENCY, HIGH-POWER AND NANOELECTRONIC DEVICES 521 10.1 Tunnel diodes 521 10.2 The IMPATT diode 525 10.3 The Gunn diode 528 10.1.1 degenerate Semiconductors 521 10.3.1 The Transferred-electron Mechanism 528 10.3.2 Formation and drift of Space Charge domains 531 10.4 The p-n-p-n diode 533 10.5 The Semiconductor-Controlled Rectifier 539 10.6 Insulated-Gate Bipolar Transistor 541 10.7 nanoelectronic devices 544 10.4.1 Basic Structure 533 10.4.2 The Two-Transistor Analogy 534 10.4.3 variation of a with Injection 535 10.4.4 Forward-Blocking State 536 10.4.5 Conducting State 537 10.4.6 Triggering Mechanisms 538 10.5.1 Turning off the SCR 540 10.7.1 Zero-dimensional Quantum dots 544 10.7.2 One-dimensional Quantum wires 546 10.7.3 Two-dimensional Layered Crystals 547 10.7.4 Spintronic Memory 548 10.7.5 nanoelectronic Resistive Memory 550 AppendIces I. definitions of Commonly Used Symbols 555 II. Physical Constants and Conversion Factors 559 III. Properties of Semiconductor Materials 560 Iv. derivation of the density of States in the Conduction v. derivation of Fermi—dirac Statistics 566 vI. dry and wet Thermal Oxide Thickness Grown on vII. Solid Solubilities of Impurities in Si 571 vIII. diffusivities of dopants in Si and SiO2 572 IX. Projected Range and Straggle as Function of Implant Answers to Selected Self Quiz Questions 576 Index 581 Band 561 Si (100) as a Function of Time and Temperature 569 energy in Si 574
£250.65
