Electronic devices and materials Books
Springer Nature Switzerland AG Integrated Ring Resonators: A Compendium
Book SynopsisThe optical filter is resonator based. The required passband shape of ring resonator-filters can be custom designed by the use of configurations of various ring coupled resonators. This book describes the current state-of-the-art on these devices. It provides an in-depth knowledge of the simulation, fabrication and characterization of ring resonators for use as example filters, lasers, sensors.Table of Contents1. Introduction2. Ring Resonators: Theory and Modeling2.1 Single Ring Resonators2.1.1 Ring Structure2.1.2 Racetrack Shaped Resonators2.2 Double Ring Resonators2.2.1 Serially Coupled Double Ring Resonator2.2.2 Parallel Coupled Double Ring Resonator2.3 Multiple Coupled Resonators2.3.1 Serially Coupled Ring Resonators2.3.2 Parallel Coupled Ring Resonators3. Materials, Fabrication and Characterization Methods3.1 Wafer Bonding3.1.1 Bonding with Intermediate Layer3.1.2 Bonding without Intermediate Layer3.1.3 Benzocyclobutene (BCB) Wafer Bonding3.2 Dry Etching3.3 Si based Materials3.3.1 Ring Resonators based on Si–SiO23.3.2 Ring Resonators based on Ta2O5–SiO23.3.3 Ring Resonators based on SiN, SiON and Si3N43.3.4 Ring Resonators based on SiO2-GeO23.4 III-V Materials3.4.1 The Quaternary Semiconductor Compound GaInAsP3.4.2 The Semiconductor Compound AlGaAs3.4.3 Lateral Coupling in GaInAsP/InP3.4.4 Vertical Coupling in GaInAsP/InP3.4.5 Lateral Coupling in AlGaAs/GaAs3.4.6 Vertical Coupling in AlGaAs/GaAs3.4.7 Implementation of Gain in Ring Resonators3.5 Polymers3.5.1 Conventional Fabrication Techniques3.5.2 Replication and Nanoimprinting3.5.3 Novel Polymer Devices3.6 Temperature Insensitivity3.7 Polarization Independence3.8 Characterization Methods3.8.1 Conventional Characterization3.8.2 Optical Low Coherence Reflectometry (OLCR)3.8.3 Evanescent Field Measurement Methods3.9 Lithium niobate and hydrid solutions3.9.1 Ring Resonators based on Lithium niobate3.9.2 Ring Resonators based on Lithium niobate on Insulators ( LNOI)3.9.3 Ring Resonators based on Lithium niobate in hybrid configurations with nitrides4. Building Blocks of Ring Resonator Devices4.1 Couplers4.1.1 Directional Couplers4.1.2 Multimode Interference Couplers4.1.3 Y-Couplers4.2 Bends4.3 Spot Size Converters for Light In- and Outcoupling4.4 Gratings for Light In- and Outcoupling5. Devices & Applications5.1 Filters5.1.1 Passive Devices5.1.2 Devices with gain section5.2 Tunability Methods5.2.1 Wavelength Tuning5.2.2 Center Wavelength Trimming5.2.3 Tunable Couplers in Ring Resonators5.3 Dispersion Compensators5.4 Mach-Zehnder combined with Ring Resonator5.5 Modulators5.6 Lasers5.6.1 All Active Lasers5.6.2 Devices with gain section5.6.3 Passive Ring Resonator Coupled Lasers5.7 Wavelength Converters5.8 Optical Signal Processing5.8.1 Logic Gates5.8.2 Switching5.8.3 Telecom Operations6. Sensors6.1 Microfluidics6.2 Optofluidics6.3 Biosensors7. Whispering Gallery Mode Devices7.1 Whispering Gallery Modes (WGM)7.2 WGM Filters7.3 WGM Lasers7. OutlookReferencesIndex
£113.99
Springer Nature Switzerland AG Advanced X-ray Detector Technologies: Design and
Book SynopsisThis book offers readers an overview of some of the most recent advances in the field of detectors for X-ray imaging. Coverage includes both technology and applications, with an in-depth review of the research topics from leading specialists in the field. Emphasis is on high-Z materials like CdTe, CZT and perovskites, since they offer the best implementation possibilities for direct conversion X-ray detectors. Authors discuss material challenges, detector operation physics and technology and readout integrated circuits required to detect signals processes by high-Z sensors.Table of ContentsIntroduction to High-Z Semiconductor Detectors.- High-Z compound semiconductors as sensors for hybrid pixel area detectors.- Photon-integrating hybrid pixel array detectors for high-energy x-ray applications.- Photon counting detectors and their applications in medical imaging.- CZT Detectors for High-Flux.- Position-sensitive virtual Frisch-grid CdZnTe detectors and their applications.- Drift detectors and Compton cameras.- CdTe Pixel Detectors for Hard X-Ray Astronomy.- High-Z pixel sensor characterization for synchrotron applications.- High Performance CdTe/CZT Spectro-Imagers.
£67.49
Springer Nature Switzerland AG Interval Reachability Analysis: Bounding Trajectories of Uncertain Systems with Boxes for Control and Verification
Book SynopsisThis brief presents a suite of computationally efficient methods for bounding trajectories of dynamical systems with multi-dimensional intervals, or ‘boxes’. It explains the importance of bounding trajectories for evaluating the robustness of systems in the face of parametric uncertainty, and for verification or control synthesis problems with respect to safety and reachability properties. The methods presented make use of: interval analysis; monotonicity theory; contraction theory; and data-driven techniques that sample trajectories. The methods are implemented in an accompanying open-source Toolbox for Interval Reachability Analysis. This brief provides a tutorial description of each method, focusing on the requirements and trade-offs relevant to the user, requiring only basic background on dynamical systems. The second part of the brief describes applications of interval reachability analysis. This makes the brief of interest to a wide range of academic researchers, graduate students, and practising engineers in the field of control and verification. Trade Review“The motivation of this book is to provide to the readers tutorial presentations of several approaches for interval reachability analysis, without requiring any previous knowledge and experience of reachability analysis. Two parts, Part I and Part II, are used for this purpose. Part I describes six main methods for interval reachability analysis and in Part II several applications are presented.” (Takashi Amemiya, Mathematical Reviews, October, 2022)Table of ContentsChapter 1. Introduction.- Part 1: Reachability Methods.- Chapter 2. Interval Analysis.- Chapter 3. Monotonicity.- Chapter 4. Mixed-Monotonicity.- Chapter 5. Sampled-Data Mixed-Monotonicity.- Chapter 6. Growth Bounds.- Chapter 7. Sampling-Based Methods.- Part 2: Applications.- Chapter 8. Safety and Reachability Verification.- Chapter 9. Interval Volume as a Robustness Measure.- Chapter 10. Abstraction-Based Control Synthesis.
£49.49
Springer Nature Switzerland AG Annals of Scientific Society for Assembly,
Book SynopsisThis Open Access proceedings presents a good overview of the current research landscape of assembly, handling and industrial robotics.The objective of MHI Colloquium is the successful networking at both academic and management level. Thereby, the colloquium focuses an academic exchange at a high level in order to distribute the obtained research results, to determine synergy effects and trends, to connect the actors in person and in conclusion, to strengthen the research field as well as the MHI community. In addition, there is the possibility to become acquatined with the organizing institute. Primary audience is formed by members of the scientific society for assembly, handling and industrial robotics (WGMHI). Table of ContentsAssembly Planning: Generic Modeling Technique for flexible and highly available Assembly Systems.- Transmitter Positioning of Distributed Large-scale Metrology within Lineless Mobile Assembly Systems.- Optimized High Precision Stacking of Fuel Cell Components for Medium to Large Production Volumes.- Mobile, Modular and Adaptive Assembly Jigs for Large-scale Products.- Design of an Automated Assembly Station for Process Development of All-Solid-State Battery Cell Assembly.-Grasping: Combined Structural and Dimensional Synthesis of a Parallel Robot for Cryogenic Handling Tasks.- Secure Clamping of Parts for Disassembly for Remanufacturing.- Aerial grasping and transport using an unmanned aircraft (UA) equipped with an industrial suction gripper.- Computing Gripping Points in 2D Parallel Surfaces via Polygon Clipping.- Concept for robot-based cable assembly regarding industrial production.- Human-Machine Interaction: Improving the understanding of a remote environment by immersive Man-Machine interaction.- Towards a Modular Elbow Exoskeleton: Concepts for Design and SystemControl.- Adaptive Motion Control Middleware for Teleoperation based on Pose Tracking and Trajectory Planning.- Approach of a Decision Support Matrix for the Implementation of Exoskeletons in Industrial Workplaces.- An approach to integrate a blockchain-based payment model and independent secure documentation for a Robot as a Service.- Human-Robot Collaboration: Human Body Simulation within a Hybrid Operating Method for a Safe and Efficient Human-Robot Collaboration.- Towards Semi Automated Pre-assembly for Aircraft Interior Production.- An approach for direct offline programming of high precision assembly tasks on 3D scans using tactile control and automatic program adaption.- Industry 4.0: Implementation of innovative manufacturing technologies in foundries for large-volume components.- The Digital Twin as a mediator for the digitalization and conservation of expert knowledge.- Web Service for Point Cloud supported Robot Programming using Machine Learning.- Using of Augmented Reality for improved Human-Machine interaction and Real-Time Error Correction of Laboratory Units.- Scalability of assembly line automation based on the integrated product development approach.- Machine Vision: Robot-based Creation of Complete 3D Workpiece Models.- Classification of assembly operations using recurrent neural networks.- Configuration and enablement of vision sensor solutions through a combined simulation based process chain.- Towards Synthetic AI Training Data for Image Classification in Intralogistic Settings.- Evaluation of ML-based Grasping Approaches inthe Field of Automated Assembly.- Robot Programming: Playback Robot Programming Framework for Fiber Spray Processes.- LiDAR-Based Localization for Formation Control of Multi-Robot Systems.- Playback Robot Programming With Loop Increments.- Web-based platform for the configuration of robot applications: A retrospective view on the research project ROBOTOP.- Partial Automated Multi-Pass-Welding for Thick Sheet Metal Connections.
£31.49
Springer Nature Switzerland AG Electronic Devices, Circuits, and Applications
Book SynopsisThis textbook for a one-semester course in Electrical Circuits and Devices is written to be concise, understandable, and applicable. Every new concept is illustrated with numerous examples and figures, in order to facilitate learning. The simple and clear style of presentation is complemented by a spiral and modular approach to the topic. This method supports the learning of those who are new to the field, as well as provides in-depth coverage for those who are more experienced. The author discusses electronic devices using a spiral approach, in which key devices such as diodes and transistors are first covered with simple models that beginning students can easily understand. After the reader has grasped the fundamental concepts, the topics are covered again with greater depth in the latter chapters.Table of ContentsInterpreting I-V Curves Introduction to the Diode Semiconductor Physics Introduction to the BJT Introduction to MOSFETs Single Transistor Amplifiers PMOS & CMOS Frequency Response Device Physics Revisited Diode Circuits Diode & BJT Equations Practical Tips in ElectronicsIndex
£61.74
Springer Nature Switzerland AG Intelligent Systems and Applications: Proceedings
Book SynopsisThis book presents Proceedings of the 2021 Intelligent Systems Conference which is a remarkable collection of chapters covering a wider range of topics in areas of intelligent systems and artificial intelligence and their applications to the real world. The conference attracted a total of 496 submissions from many academic pioneering researchers, scientists, industrial engineers, and students from all around the world. These submissions underwent a double-blind peer-review process. Of the total submissions, 180 submissions have been selected to be included in these proceedings.As we witness exponential growth of computational intelligence in several directions and use of intelligent systems in everyday applications, this book is an ideal resource for reporting latest innovations and future of AI. The chapters include theory and application on all aspects of artificial intelligence, from classical to intelligent scope.We hope that readers find the book interesting and valuable; it provides the state-of-the-art intelligent methods and techniques for solving real-world problems along with a vision of the future research. Table of ContentsZero-Touch Customer Order Fulfillment to Support the New Normal of Retail in the 21st Century.- VitrAI: Applying Explainable AI in the Real World.- Contactless Interface for Navigation in Medical Imaging Systems.- Mobile Apps for 3D Face Scanning.- Tabu Search for Locating-Routing in the Goods Delivery and Waste Pickup in Trujillo-Peru.- The Emergence of Hybrid Edge-Cloud Computing for Energy Efficiency in Buildings.- Particle Swarm Model for Predicting Student Performance in Computing Programs.- A Genetic Algorithm for Quantum Circuit Generation in OpenQASM.- An Improved Clustering-based Harmony Search Algorithm (IC-HS).- Supporting Financial Inclusion with Graph Machine Learning and Super-App Alternative Data.- Electromagnetism-Like Algorithm and Harmony Search for Chemical Kinetics Problem.- Learning Incorrect Verdict Patterns of the Established Face Recognizing CNN Models using Meta-Learning Supervisor ANN.- SmartData: An Intelligent Decision Support System to Predict the Readers Permanence in News.- High Capacity Data Hiding for AMBTC Decompressed Images using Pixel Modification and Difference Expansion.- Fraud Detection in Online Market Research.
£161.99
Springer Nature Switzerland AG Advances in Automation and Robotics Research:
Book SynopsisThis book gathers the proceedings of the 3rd Latin American Congress on Automation and Robotics, held at Monterrey, Mexico, on November 17–19, 2021. This book presents recent advances in the modeling, design, control, and development of autonomous and robotic systems and explores current exciting applications and future challenges of these technologies. The scope of this book covers a wide range of research fields associated with automation and robotics encountered within engineering, scientific research, and practice. These topics are related to autonomous systems, industrial automation and robotics, modelling and systems identification, simulation procedures and experimental validations, control theory, artificial intelligence, computer vision, sensing and sensor fusion, multi-robot and multi-agent systems, field and service robotics, human robot interaction and interfaces, modelling of robotic systems, and the design of new robotic platforms.Table of ContentsDecidable Fragments of Calculi Used in CatLog.- Interactive Theorem Proving for Logic and Information.- A Valence Catalogue for Norwegian.- Arabic Computational Linguistics: Potential, Pitfalls and Challenges.
£134.99
Springer Nature Switzerland AG Theory of Applied Robotics: Kinematics, Dynamics,
Book SynopsisTheory of Applied Robotics: Kinematics, Dynamics, and Control presents detailed robotics concepts at a theoretical-practical level, concentrating on their practical use. Related theorems and formal proofs are provided, as are real-life applications. This new edition is completely revised, and includes updated and expanded example sets and problems and new materials. This textbook is designed for undergraduate or first-year graduate programs in mechanical, systems, and industrial engineering. Practicing engineers, researchers, and related professionals will appreciate the book’s user-friendly presentation of a wealth of robotics topics, most notably in 3D kinematics and dynamics of manipulator robots.Table of ContentsIntroduction.- Kinematics.- Rotation Kinematics.- Orientation Kinematics.- Motion Kinematics.- Forward Kinematics.- Inverse Kinematics.- Angular Velocity.- Velocity Kinematics.- Numerical Methods in Kinematics.- Dynamics.- Acceleration Kinematics.- Motion Dynamics.- Robot Dynamics.- Control.- Path Planning.- F Time Optimal Control.- Control Techniques.- Appendix A: Global Frame Triple Rotation.- Appendix B: Local Frame Triple Rotation.- Appendix C: Principal Central Screws Triple Combination. Appendix D: Trigonometric Formula.
£85.49
Springer Emerging Applications of Novel Nanoparticles
Book SynopsisChapter 1. 2D nanomaterials for Adsorption of Wastewater Pollutants.- Chapter 2. UNVEILING THE POWER OF NANOMATERIALS IN THE AREA OF FORENSICS.- Chapter 3. Buckypapers: Applications in Composite Materials.- Chapter 4. Nanoparticles for Diagnosis and Treatment of Infectious Diseases.- Chapter 5. Ti3C2Tx MXene based nanostructured materials for emerging applications.- Chapter 6. Molybdenum Disulfide: A 2D material.- Chapter 7. Surface Functionalization of 2D MOs for Enhanced Biocompatibility and Biomedical Applications.- Chapter 8. Application of a novel Nanotherapeutic strategy in Ayurvedic treatment.- Chapter 9. Biosynthesis of Iron Oxide Nanoparticles (IONPs): Toxicity Evaluation and Applications for Magnetic Resonance Imaging and Magnetic Hyperthermia.- Chapter 10. Effect of annealing temperature on structural, morphological and optical properties of CdZnTe thin films.- Chapter 11. Two-dimensional Molybdenum Disulfide Nanosheets based Optoelectronic Devices.- Chapter 12. Pho
£143.99
De Gruyter Fiber-Based Optical Resonators: Cavity QED,
Book SynopsisAfter laying the foundation by explaining the fundamental principles of light propagation and optical resonators, this book delves into the realm of implementing resonators through a fiber-based approach. It extensively explores fiber-based resonators, encompassing a comprehensive discussion spanning from their intricacies of design to their pivotal roles in advancing quantum optics experiments. Furthermore, it details the design techniques, meticulously explaining the latest developments within this dynamic field. There are vivid illustrations highlighting the various applications of resonators in experimental optics and cavity quantum electrodynamics. Also, a discourse is presented regarding the future potential of fiber-based resonators in quantum technology. The book serves as a valuable resource for individuals with an interest in optical resonators and their boundless possibilities.
£86.45
De Gruyter Semiconductor Spintronics
£64.60
de Gruyter Nanoelectronics
Book Synopsis
£64.60
Springer International Publishing AG FIB Nanostructures
Book SynopsisFIB Nanostructures reviews a range of methods, including milling, etching, deposition, and implantation, applied to manipulate structures at the nanoscale. Focused Ion Beam (FIB) is an important tool for manipulating the structure of materials at the nanoscale, and substantially extends the range of possible applications of nanofabrication. FIB techniques are widely used in the semiconductor industry and in materials research for deposition and ablation, including the fabrication of nanostructures such as nanowires, nanotubes, nanoneedles, graphene sheets, quantum dots, etc. The main objective of this book is to create a platform for knowledge sharing and dissemination of the latest advances in novel areas of FIB for nanostructures and related materials and devices, and to provide a comprehensive introduction to the field and directions for further research. Chapters written by leading scientists throughout the world create a fundamental bridge between focused ion beam and nanotechnology that is intended to stimulate readers' interest in developing new types of nanostructures for application to semiconductor technology. These applications are increasingly important for the future development of materials science, energy technology, and electronic devices. The book can be recommended for physics, electrical engineering, and materials science departments as a reference on materials science and device design.Table of ContentsPrefaceChapter 1: Focused Ion Beam (FIB) technology for micro and nanoscale fabricationsChapter 2: Epitaxial ferroelectric nanostructures fabricated by FIB millingChapter 3: Low current focused-ion-beam milling for freestanding nanomaterial characterizationChapter 4: Focused ion beam milling of carbon nanotube yarns and Bucky-papers: Correlating their internal structure with their macro-propertiesChapter 5: Nanoscale electrical contacts grown by Focused-Ion-Beam (FIB) Induced DepositionChapter 6: Metal induced crystallization of focused ion beam induced deposition for functional patterned ultrathin nanocarbonChapter 7: Deterministic Fabrication of Micro- and Nano-Structures by Focused Ion BeamChapter 8: Application of ion beam processes to scanning probe microscopyChapter 9: Fabrication of needle-shaped specimens containing sub-surface nanostructures for Electron TomographyChapter 10: Fabrication technique of deformation carriers (gratings and speckle patterns) with FIB for micro/nano-scale deformation measurementChapter 11: Controlled Quantum Dot Formation on Focused Ion Beam patterned GaAs SubstratesChapter 12: Development of Functional Metallic Glassy Materials by FIB and Nano-imprint TechnologiesChapter 13: Nanostructured Materials Driven by Dielectrophoresis on Nanoelectrods Patterned by Focused Ion BeamChapter 14: Focused Ion Beam Assisted Nano-Scale Processing and Thermoelectrical CharacterizationChapter 15: FIB design for Nanofluidic applicationsChapter 16: FIB Patterning of Stainless Steel for the Development of Nano-Structured Stent Surfaces for Cardiovascular ApplicationsChapter 17: Evaluation of damages induced by Ga+ focused ion beam in piezoelectric nanostructuresChapter 18: Instabilities in Focused Ion Beam-patterned nanostructuresChapter 19: Nanostructures by mass-separated FIB Index
£123.49
Springer International Publishing AG Dry Etching Technology for Semiconductors
Book SynopsisThis book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.Trade ReviewThis book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc. Table of ContentsContribution of Dry Etching Technology to Progress of Semiconductor Integrated Circuit.- Mechanism of Dry Etching.- Dry Etching of Various Materials.- Dry Etching Equipments.- Dry Etching Damage.- Latest Dry Etching Technologies.- Future Challenges and Outlook for Dry Etching Technology.
£104.49
Springer International Publishing AG Low-Power Analog Techniques, Sensors for Mobile
Book SynopsisThis book is based on the 18 invited tutorials presented during the 27th workshop on Advances in Analog Circuit Design. Expert designers from both industry and academia present readers with information about a variety of topics at the frontiers of analog circuit design, including the design of analog circuits in power-constrained applications, CMOS-compatible sensors for mobile devices and energy-efficient amplifiers and drivers. For anyone involved in the design of analog circuits, this book will serve as a valuable guide to the current state-of-the-art.Provides a state-of-the-art reference in analog circuit design, written by experts from industry and academia;Presents material in a tutorial-based format;Covers the design of analog circuits in power-constrained applications, CMOS-compatible sensors for mobile devices and energy-efficient amplifiers and drivers.Table of ContentsIntroduction.- Hybrid Data Converters.- Hybrid and Segmented ADC Techniques to Optimize Power Efficiency and Area. The Case of a 0.076mm2 600MS/s 12b SAR-DS ADC.- Interleaved Pipelined SAR ADCs: Combined Power for Efficient Accurate High-Speed Conversion.- Hybrid VCO-based 0-1 MASH and Hybrid DS SAR ADCs.- Hybrid Architecture for Reconfigurable SAR ADC.- A Hybrid ADC for High Resolution: the Zoom-ADC.- Advances in Bio-Medical Sensor Systems for Wearable Health.- An Ultra-Low Power, Robust Photoplethysomographic Readout Exploiting Compressive Sampling, Artifact Reduction and Sensor Fusion.- A 32kHz-DTCXO RTC Module with an Overall Accuracy of ±1ppm and an All-Digital 0.1ppm Compensation-Resolution Scheme.- Energy-Efficient High-Resolution resistor-based temperature sensors.- Ultra-Low Power Charge-Pump-Based Bandgap References.- An Energy-Efficient Integrating Dual-Slope Capacitance-to-Digital Converter.- FD-SOI Technology, Advantages for Analog/RF and Mixed-Signal Designs.- Pipeline and SAR ADCs for Advanced Nodes.- Time-Based Biomedical AFE Readout in Ultra-Low Voltage, Small-Scale CMOS Technology.- An Ultra-Low Power Bluetooth Low-Energy Transceiver for IoT Applications.- Analog/Mixed-Signal Design in FinFET Technologies.- Analog design in 14nm and 28nm.
£107.99
Carl Hanser Verlag GmbH & Co Automotive High Speed Communication Technologies:
Book SynopsisThe demands for processing power, software, and communication are continuously increasing; in all industries and also in the automotive one. In vehicles, the need for higher data rates is driven by more electronic functions in general, but especially by ever more potent (camera) sensors, displays, and high performance ECUs.This book provides a holistic view on new SerDes and Ethernet high-speed communication solutions for cars. It addresses core physical components such as cables, connectors, or PCB design, as well as physical layer processing, use-case-specific protocols, and the use cases as such. It is important to the authors not only to explain the technologies, but also to provide context and background in respect to various technical choices. The intent is to help readers understand the current eco-system end-to-end, whether they are new to the automotive industry or experts who want to deepen their understanding on specific items, whether they are working for a car manufacturer directly or any of the suppliers, whether they are already involved or evaluating to get involved.This is the first book to address the following topics: the >10 Gbps Automotive Ethernet technologies IEEE 802.3cy and IEEE 802.3cz asymmetric Ethernet the new automotive SerDes Standard, the ASA Motion Link the MIPI Automotive SerDes Solutions ( MASS ) power supply over coaxial data cables design for testability in an automotive context
£78.20
Wiley-VCH Verlag GmbH Van der Waals Heterostructures: Fabrications,
Book SynopsisVan der Waals Heterostructures A comprehensive resource systematically detailing the developments and applications of van der Waals heterostructures and devices Van der Waals Heterostructures is essential reading to understand the developments made in van der Waals heterostructures and devices in all aspects, from basic synthesis to physical analysis and heterostructures assembling to devices applications, including demonstrated applications of van der Waals heterostructure on electronics, optoelectronics, and energy conversion, such as solar energy, hydrogen energy, batteries, catalysts, biotechnology, and more. This book starts from an in-depth introduction of van der Waals interactions in layered materials and the forming of mixed-dimensional heterostructures via van der Waals force. It then comprehensively summarizes the synthetic methods, devices building processes and physical mechanism of 2D van der Waals heterostructures, and devices including 2D-2D electronics, 2D-2D optoelectronics, and mixed dimensional van der Waals heterostructures. In Van der Waals Heterostructures, readers can expect to find specific information on: The current library of 2D semiconductors and the current synthesis and performances of 2D semiconductors Controllable synthesis and assemble van der Waals heterostructures, physics of the van der Waals interface, and multi-field coupling effects 2D-2D electronics, 2D-2D optoelectronics, mixed dimensional van der Waals heterostructures, and van der Waals heterostructure applications on energy conversion Insight into future perspectives of the van der Waals heterostructures and devices with the detailed effective role of 2D materials for integrated electrical and electronic equipment Table of Contents1 Introduction 2 The library of 2D semiconductors 3 Synthesis and performances of 2D semiconductors 4 The controllable synthesis and assemble van der waals heterostructures 5 The Physics of van der Waals interface 6 The multi-field coupling effects 7 2D-2D electronics 8 2D-2D optoelectronics 9 Mixed dimensional Van der Waals heterostructures 10 Van der waals heterostructure application on energy conversion 11 Perspective and outlook
£106.25
Wiley-VCH Verlag GmbH Graphene Field-Effect Transistors: Advanced
Book SynopsisGraphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.Table of ContentsForeword xv Preface xvii 1 2D Electronic Circuits for Sensing Applications 1 Diogo Baptista, Ivo Colmiais, Vitor Silva, Pedro Alpuim, and Paulo M. Mendes 1.1 Introduction 1 1.2 Graphene Inductors 3 1.2.1 Modeling of Graphene Inductors 4 1.3 Graphene Capacitors 5 1.3.1 Modeling Graphene Capacitors 8 1.4 2D Material Transistors 9 1.4.1 Most Common Topologies for Transistors 10 1.4.2 Modeling of 2D Materials-Based Transistors 11 1.5 2D Material Diodes 15 1.5.1 Most Common Topologies 16 1.5.2 Modeling of 2D Materials-Based Diodes 17 1.6 Graphene Devices 18 1.6.1 Graphene Frequency Multipliers 18 1.6.2 Graphene Mixers 18 1.6.3 Graphene Oscillators 19 1.6.3.1 Ring Oscillators 19 1.6.3.2 LC Tank Oscillators 19 1.7 Conclusion 19 References 20 2 Large Graphene Oxide for Sensing Applications 25 Jingfeng Huang, J. Amanda Ong, and I.Y. Alfred Tok 2.1 Graphene Oxide (GO) 25 2.2 GO as Biosensors 25 2.3 Large GO 26 2.4 Mechanism of Large GO via Modified Hummers Method 27 2.5 Large GO (Modified Hummers Method) Biosensors 28 2.6 Mechanism of Large GO via Reduced GO Growth 29 2.7 Large GO (Reduced GO Growth) Biosensors 34 2.8 Conclusion 38 2.9 Further Developments 38 References 39 3 Solution-Gated Reduced Graphene Oxide FETs: Device Fabrication and Biosensors Applications 43 Nirton C. S. Vieira, Bianca C. S. Ribeiro, Rodrigo V. Blasques, Bruno C. Janegitz, Fabrício A. dos Santos, and Valtencir Zucolotto 3.1 Introduction 43 3.2 Graphene, Graphene Oxide, and Reduced Graphene Oxide 45 3.2.1 Chemical Reduction 48 3.2.2 Thermal Reduction 49 3.2.3 Electrochemical Reduction 51 3.3 rGO-Based Solution-Gated FETs 52 3.3.1 Manufacturing Strategies 53 3.4 Applications of rGO SG-FETs as Biosensors 57 3.4.1 rGO Functionalization 59 3.4.2 Enzymatic Biosensors 60 3.4.3 Affinity Biosensors 61 3.4.4 Debye Length Screening and How to Overcome It 63 3.5 Final Remarks and Challenges 64 Acknowledgments 65 References 65 4 Graphene-Based Electronic Biosensors for Disease Diagnostics 71 Ahmar Hasnain and Alexey Tarasov 4.1 Introduction 71 4.1.1 A Promise for Diagnostics 71 4.1.2 Principle of Graphene FET Sensor 72 4.2 Device Fabrication Process 75 4.2.1 Graphene Synthesis 75 4.2.2 Graphene Transfer Over Substrates 76 4.2.3 Fabrication of GFET 77 4.2.4 New Developments 78 4.3 Functionalization and Passivation 78 4.3.1 Probe Molecules 79 4.3.2 Immobilization of Probe Molecules 80 4.3.3 Debye Length 81 4.3.4 Passivation 82 4.4 CVD GFETs for Diagnostics 83 4.4.1 Graphene-Based FET Biosensors for Nucleic Acids 83 4.4.2 Graphene-Based FET Biosensors for Antibody–Antigen Interactions 85 4.4.3 Graphene-Based FET Biosensors for Enzymatic Biosensors 87 4.4.4 Graphene-Based FET Biosensors for Sensing of Small Ions 90 4.5 Discussion 92 4.5.1 Summary 92 4.5.2 Challenges 92 4.5.3 Future Perspectives 93 References 93 5 Graphene Field-Effect Transistors: Advanced Bioelectronic Devices for Sensing Applications 103 Kyung Ho Kim, Hyun Seok Song, Oh Seok Kwon, and Tai Hyun Park 5.1 Introduction 103 5.1.1 Bioelectronic Nose Using Olfactory Receptor-Conjugated Graphene 106 5.1.2 Bioelectronics for Diagnosis Using Bioprobe-Modified Graphene 112 5.1.3 Biosensors for Environmental Component Monitoring Using Graphene 116 5.2 Conclusion 120 Acknowledgments 120 References 120 6 Thin-Film Transistors Based on Reduced Graphene Oxide for Biosensing 125 Kai Bao, Ye Chen, Qiyuan He, and Hua Zhang 6.1 Introduction 125 6.2 Working Principle of TFT-Based Biosensing 126 6.3 TFTs Based on rGO for Biosensing 128 6.3.1 Protein Detection 128 6.3.2 Metal-Ion Detection 131 6.3.3 Nucleic Acid Detection 134 6.3.4 Small Biomolecular Biosensor 135 6.3.5 Living-Cell Biosensor 137 6.3.6 Gas Detection 138 6.4 Conclusion 140 References 142 7 Towards Graphene-FET Health Sensors: Hardware and Implementation Considerations 149 Nicholas V. Apollo and Hualin Zhan 7.1 Introduction to Health Sensing 149 7.2 Graphene-FET in Liquid for Sensing 151 7.2.1 Graphene Transistors 153 7.2.2 Graphene Hall Structures in Liquid 156 7.2.3 Graphene Membrane Transistors 159 7.3 Device Implementation Considerations 160 7.3.1 Hardware and Instrumentation 160 7.3.2 Biostability and Biocompatibility 162 7.3.3 Medical Imaging Compatibility 163 References 164 8 Quadratic Fit Analysis of the Nonlinear Transconductance of Disordered Bilayer Graphene Field-Effect Biosensors Functionalized with Pyrene Derivatives 169 Sung Oh Woo, Sakurako Tani, and Yongki Choi 8.1 Introduction 169 8.2 Fabrication of Graphene-Based Field-Effect Biosensors 170 8.3 Fundamental Sensing Parameters of Graphene-Based Field-Effect Biosensors 173 8.4 Disordered Bilayer Graphene Field-Effect Biosensors Functionalized with Pyrene Derivatives 174 8.5 Quadratic Fit Analysis of the Nonlinear Transconductance of Disordered Bilayer Graphene Field-Effect Biosensors 177 8.6 Conclusion 181 Acknowledgment 181 References 182 9 Theoretical and Experimental Characterization of Molecular Self-Assembly on Graphene Films 185 Kishan Thodkar, Pierre Cazade, and Damien Thompson 9.1 Introduction 185 9.2 Experimental Tools to Characterize Molecular Functionalization of Graphene 186 9.2.1 Considering the Three Distinct Techniques Available for Functionalizing Graphene Are the Outcomes of the Three Functionalization Techniques Consistent, Similar, Reproducible Across all Three Techniques? 187 9.2.2 What Tools and Methods Are Available to Perform Such a Characterization of Molecular Self-Assembly Across the Nano to Macro Scale? 188 9.3 Atomistic Insights to Guide Molecular Functionalization of Graphene 196 References 203 10 The Holy Grail of Surface Chemistry of C VD Graphene: Effect on Sensing of cTNI as Model Analyte 207 Adrien Hugo, Teresa Rodrigues, Marie-Helen Polte, Yann R. Leroux, Rabah Boukherroub, Wolfgang Knoll, and Sabine Szunerits 10.1 Introduction 207 10.2 General Overview of C VD Graphene Production, Substrate Transfer and Characterization 210 10.3 Evaluation of Graphene Topographical Quality 212 10.4 CVD Graphene for FET-Based Sensing 214 10.4.1 Diazonium Chemistry on CVD Graphene 217 10.4.2 Pyrene Chemistry on CVD Graphene 220 10.5 Conclusion 225 References 226 11 Sensing Mechanisms in Graphene Field-Effect Transistors Operating in Liquid 231 Tilmann J. Neubert and Kannan Balasubramanian 231 11.1 Introduction 231 11.2 Field-Effect Operation in Liquid Compared to Operation in Air 232 11.3 Caveats When Operating FETs in Liquid 234 11.4 Graphene FETs in Liquid 235 11.5 Measurement Modes 236 11.6 Using FETs for Sensing in Liquid – Sensing Mechanisms 238 11.7 The Electrochemical Perspective 241 11.8 The GLI and pH Sensing 245 11.9 Detection of Nucleic Acids 246 11.10 Other Examples 247 11.11 Concluding Remarks 248 References 248 12 Surface Modification Strategies to Increase the Sensing Length in Electrolyte-Gated Graphene Field-Effect Transistors 251 Juliana Scotto, Wolfgang Knoll, Waldemar A. Marmisollé, and Omar Azzaroni 12.1 Introduction 251 12.2 Ion-Exclusion and Donnan Potential 253 12.3 Surface Modification with Polymer Films 255 12.4 Surface Modification with Lipid Layers 258 12.5 Surface Modification with Mesoporous Materials 260 12.6 Kinetic Cost of Extending the Sensing Length 262 12.7 Conclusions 265 References 266 13 Hybridized Graphene Field-Effect Transistors for Gas Sensing Applications 271 Radha Bhardwaj and Arnab Hazra 271 13.1 Introduction 271 13.2 Graphene 272 13.3 Graphene FET 272 13.4 Graphene in Gas Sensing 274 13.5 Graphene FET for Gas Sensing 275 13.6 Hybrid Graphene FET for Gas Sensing 277 13.7 Conclusion 281 Acknowledgments 281 References 281 14 Polyelectrolyte-Enzyme Assemblies Integrated into Graphene Field-Effect Transistors for Biosensing Applications 285 Esteban Piccinini, Gonzalo E. Fenoy, Wolfgang Knoll, Waldemar A. Marmisollé, and Omar Azzaroni 14.1 Introduction 285 14.2 Field-Effect Transistors Based on Reduced Graphene Oxide 286 14.3 Enzyme-Based GFET Sensors Fabricated via Layer-by-Layer Assembly 287 14.3.1 Layer-by-Layer (LbL) Assemblies of Polyethylenimine and Urease onto Reduced Graphene-Oxide-Based Field-Effect Transistors (rGO FETs) for the Detection of Urea 288 14.3.2 Ultrasensitive Sensing Through Enzymatic Cascade Reactions on Graphene-Based FETs 292 14.4 Conclusions 296 References 297 15 Graphene Field-Effect Transistor Biosensor for Detection of Heart Failure-Related Biomarker in Whole Blood 301 Jiahao Li, Yongmin Lei, Zhi-Yong Zhang, and Guo-Jun Zhang 15.1 Introduction 301 15.2 Experimental Systems and Procedures 304 15.2.1 Fabrication of GFET Sensor 304 15.2.2 Decoration of Platinum Nanoparticles 304 15.2.3 Surface Functionalization 305 15.2.4 Immunodetection in Whole Blood 305 15.2.5 Electrical Measurements 305 15.3 Sensing Principle of GFET for BNP Detection 306 15.4 Device Characterization 306 15.5 Sensing Performance 308 15.5.1 Stability and Reproducibility 308 15.5.2 Selectivity 309 15.5.3 Sensitivity 309 15.6 Clinical Application Prospects 311 15.7 Advantages, Limitations, and Outlook of the FET-Based BNP Assay 311 References 313 16 Enzymatic Biosensors Based on the Electrochemical Functionalization of Graphene Field-Effect Transistors with Conducting Polymers 317 Gonzalo E. Fenoy, Esteban Piccinini, Wolfgang Knoll, Waldemar A. Marmisollé, and Omar Azzaroni 16.1 Introduction 317 16.2 Functionalization of Graphene Transistors with Poly(3-aminobenzylamine-co-aniline) Nanofilms 318 16.3 Construction of Acetylcholine Biosensors Based on GFET Devices Functionalized with Electropolymerized Poly(3-amino-benzylamineco-aniline) Nanofilms 322 16.4 Glucose Detection by Graphene Field-Effect Transistors Functionalized with Electropolymerized Poly(3-amino-benzylamine-co-aniline) Nanofilms 327 16.5 Conclusions 332 References 333 17 Graphene Field-Effect Transistors for Sensing Stress and Fatigue Biomarkers 339 Biddut K. Sarker, Cheri M. Hampton, and Lawrence F. Drummy 17.1 Introduction 339 17.2 Molecular Biomarkers 341 17.3 Graphene Field-Effect Transistor Based Biosensors 343 17.3.1 Graphene 343 17.3.2 Structure of Graphene Field-Effect Transistors 345 17.3.3 Sensing Mechanism of GFET Biosensors 346 17.4 GFET Biosensor Fabrication 348 17.4.1 Graphene Production 348 17.4.2 Device Fabrication 349 17.4.3 Graphene Functionalization 350 17.5 GFET-Based Stress and Fatigue Biosensors 353 17.6 Flexible, Wearable GFET Biosensors, and Biosensor Systems 358 17.7 Current Challenges and Future Perspective 362 17.7.1 Debye Length Screening 362 17.7.2 Device-to-Device Variability 366 17.7.3 Short Lifetime and Reusability Issue 366 17.8 Conclusion 367 References 367 18 Highly Sensitive Pathogen Detection by Graphene Field-Effect Transistor Biosensors Toward Point-of-Care-Testing 373 Shota Ushiba, Takao Ono, Yasushi Kanai, Naruto Miyakawa, Shinsuke Tani, Hiroshi Ueda, Masahiko Kimura, and Kazuhiko Matsumoto 18.1 Introduction 373 18.2 Toward Detection of Pathogens by Mimicking Cell Surfaces 374 18.2.1 Introduction 374 18.2.2 Fabrication of Sialoglycan-Functionalized GFETs 375 18.2.3 Evaluation of Sialoglycan-Functionalized GFETs 375 18.3 Signal Enhancement in GFETs 377 18.3.1 Sensitivity Enhancement by Increasing Receptor Density 377 18.3.1.1 Case of Linkers 377 18.3.1.2 Basis for Evaluation of Linker-Based Performance Enhancement 378 18.3.1.3 Evaluation of Performance Enhancement by Linkers 378 18.3.2 Ultrasensitive Detection of Small Antigens by Open-Sandwich Immunoassay on GFETs 380 18.3.2.1 Principle of Open-Sandwich (OS) Immunoassay 380 18.3.2.2 Advantages of OS-IAs with GFETs 380 18.3.2.3 Antibody Fragments and Device Fabrication 381 18.3.2.4 OS-IAs on GFETs 382 18.3.2.5 OS-IAs on GFETs in Human Serum 382 18.3.3 Real-Time Measurement of Enzyme Reaction in Microdroplets Using GFETs and Its Application to Pathogen Detection 384 18.3.3.1 Introduction 384 18.3.3.2 Measurement Mechanism and Model Measurement System 385 18.4 Practical Issues: Baseline Drift and Inspection Methods 387 18.4.1 Drift Suppression and Compensation of GFET Biosensors 388 18.4.1.1 Drift Suppression in GFETs by Cation Doping 388 18.4.1.2 Drift Compensation by State-Space Modeling 390 18.4.2 Deep-Learning-Based Optical Inspection of GFETs 393 18.5 Conclusion 398 References 398 19 High-Performance Detection of Extracellular Vesicles Using Graphene Field-Effect Transistor Biosensor 405 Ding Wu, Yi Yu, Zhi-Yong Zhang, and Guo-Jun Zhang 19.1 What is Extracellular Vesicles 405 19.2 The Clinical Significance of Extracellular Vesicles 406 19.3 Introduction to Graphene Field-Effect Transistor Biosensor 406 19.4 GFET Biosensor for High-Performance Detection of Extracellular Vesicles 407 19.4.1 Detection of the Overall Level of Microvesicles Using GFET Biosensor 408 19.4.2 Specific Detection of Hepatocellular Carcinoma-Derived Microvesicles Using Dual-Aptamer Modified GFET Biosensor 409 19.4.3 Label-Free Detection of Cancerous Exosomes Using GFET Biosensor 410 19.5 Some Prospects for Graphene Field-Effect Transistor Biosensor 411 References 412 Index 417
£101.25
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Semiconductors: Data Handbook
Book SynopsisThis Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials.Table of ContentsDetailed table of contents.- Tetrahedrally bonded elements and compounds.- 1 Elements of the IVth group and compounds.- 1.0 Crystal structure and electronic structure.- 1.1 Diamond (C).- 1.2 Silicon (Si).- 1.3 Germanium (Ge).- 1.4 Grey tin (?-Sn).- 1.5 Silicon carbide (SiC).- 1.6 Silicon germanium mixed crystals (SixGe1-x.- 2 III-V compound.- 2.0 Crystal structure and electronic structure.- 2.1 Boron nitride (BN).- 2.2 Boron phosphide (BP).- 2.3 Boron arsenide (BAs).- 2.4 Boron antimonide (BSb).- 2.5 Aluminum nitride (AlN).- 2.6 Aluminum phosphide (AlP).- 2.7 Aluminum arsenide (AlAs).- 2.8 Aluminum antimonide (AlSb).- 2.9 Gallium nitride (GaN).- 2.10 Gallium phosphide (GaP).- 2.11 Gallium arsenide (GaAs).- 2.12 Gallium antimonide (GaSb).- 2.13 Indium nitride (InN).- 2.14 Indium phosphide (InP).- 2.15 Indium arsenide (InAs).- 2.16 Indium antimonide (InSb).- 2.17 Ternary alloys lattice matched to binary III-V compounds.- 2.18 Quaternary alloys lattice matched to binary III-V compounds.- 3 II-VI compound.- 3.0 Crystal structure and electronic structure.- 3.1 Beryllium oxide (BeO.- 3.2 Beryllium sulfide (BeS.- 3.3 Beryllium selenide (BeSe.- 3.4 Beryllium telluride (BeTe).- 3.5 Magnesium oxide (MgO).- 3.6 Magnesium sulfide (MgS).- 3.7 Magnesium selenide (MgSe).- 3.8 Magnesium telluride (MgTe).- 3.9 Calcium oxide (CaO).- 3.10 Strontium oxide (SrO).- 3.11 Barium oxide (BaO).- 3.12 Zinc oxide (ZnO).- 3.13 Zinc sulfide (ZnS).- 3.14 Zinc selenide (ZnSe).- 3.15 Zinc telluride (ZnTe).- 3.16 Cadmium oxide (CdO).- 3.17 Cadmium sulfide (CdS).- 3.18 Cadmium selenide (CdSe).- 3.19 Cadmium telluride (CdTe).- 3.20 Mercury oxide (HgO).- 3.21 Mercury sulfide (HgS).- 3.22 Mercury selenide (HgSe).- 3.23 Mercury telluride (HgTe).- 4 I-VII compound.- 4.0 Crystal structure and electronic structure.- 4.1 Cuprous fluoride (CuF).- 4.2 Cuprous chloride (?-CuCl).- 4.3 Cuprous bromide (?-CuBr).- 4.4 Cuprous iodide (?-CuI).- 4.5 Silver fluoride (AgF).- 4.6 Silver chloride (AgCl).- 4.7 Silver bromide (AgBr).- 4.8 Silver iodide (AgI).- 5 III2-VI3 compound.- 5.0 Crystal structure of quasi-binary II2-VI3 compounds.- 5.1 Gallium sulfide (Ga2S3).- 5.2 Gallium selenide (Ga2Se3).- 5.3 Gallium telluride (Ga2Te3).- 5.4 Indium sulfide (In2S3).- 5.5 Indium selenide (In2Se3).- 5.6 Indium telluride (In2Te3).- 6 I-III-VI2 compound (included are I-Fe-VI2 compounds).- 6.0 Crystal structure and electronic structure.- 6.1 Copper aluminum sulfide (CuAlS2).- 6.2 Copper aluminum selenide (CuAlSe2).- 6.3 Copper aluminum telluride (CuAlTe2).- 6.4 Copper gallium sulfide (CuGaS2).- 6.5 Copper gallium selenide (CuGaSe2).- 6.6 Copper gallium telluride (CuGaTe2).- 6.7 Copper indium sulfide (CuInS2).- 6.8 Copper indium selenide (CuInSe2).- 6.9 Copper indium telluride (CuInTe2).- 6.10 Silver gallium sulfide (AgGaS2).- 6.11 Silver gallium selenide (AgGaSe2).- 6.12 Silver gallium telluride (AgGaTe2).- 6.13 Silver indium sulfide (AgInS2).- 6.14 Silver indium selenide (AgInSe2).- 6.15 Silver indium telluride (AgInTe2).- 6.16 Copper thallium sulfide (CuTlS2).- 6.17 Copper thallium selenide (CuTlSe2).- 6.18 Copper thallium telluride (CuTlT2).- 6.19 Silver thallium selenide (AgTlSe2).- 6.20 Silver thallium telluride (AgTlTe2).- 6.21 Copper iron sulfide (CuFeS2).- 6.22 Copper iron selenide (CuFeSe2).- 6.23 Copper iron telluride (CuFeTe2).- 6.24 Silver iron selenide (AgFeSe2).- 6.25 Silver iron telluride (AgFeTe2).- 7 II-IV-V2 compound.- 7.0 Crystal structure and electronic structure.- 7.1 Magnesium silicon phosphide (MgSiP2).- 7.2 Zinc silicon phosphide (ZnSiP2).- 7.3 Zinc silicon arsenide(ZnSiAs2).- 7.4 Zinc germanium nitride (ZnGeN2).- 7.5 Zinc germanium phosphide (ZnGeP2).- 7.6 Zinc germanium arsenide (ZnGeAs2).- 7.7 Zinc tin phosphide (ZnSnP2).- 7.8 Zinc tin arsenide (ZnSnAs2).- 7.9 Zinc tin antimonide (ZnSnSb2).- 7.10 Cadmium silicon phosphide (CdSiP2).- 7.11 Cadmium silicon arsenide (CdSiAs2).- 7.12 Cadmium germanium phosphide (CdGeP2).- 7.13 Cadmium germanium arsenide (CdGeAs2).- 7.14 Cadmium tin phosphide (CdSnP2).- 7.15 Cadmium tin arsenide (CdSnAs2).- 8 I2-IV-VI3 compound.- 8.1 Copper germanium sulfide (Cu2GeS3).- 8.2 Copper germanium selenide (Cu2GeSe3).- 8.3 Copper germanium tellurid (Cu2GeSe3).- 8.4 Copper tin sulfide (Cu2SnS3).- 8.5 Copper tin selenide (Cu2SnSe3).- 8.6 Copper tin telluride (Cu2SnTe3).- 8.7 Silver germanium selenide (Ag2GeSe3).- 8.8 Silver germanium telluride (Ag2GeTe3).- 8.9 Silver tin sulfide (Ag2SnS3).- 8.10 Silver tin selenide (Ag2SnSe3).- 8.11 Silver tin telluride (Ag2SnTe3).- 9 I3-V-VI4 compound.- 9.0 Crystal structure.- 9.1 Copper thiophosphate (Cu3PS4).- 9.2 Copper thioarsenide, enargite, luzonite (Cu3AsS4).- 9.3 Copper arsenic selenide (Cu3AsSe4).- 9.4 Copper antimony sulfide, famatinite (Cu3SbS4).- 9.5 Copper antimony selenide (Cu3SbSe4).- 9.6 Copper arsenic telluride (Cu3AsTe.- 9.7 Copper antimony telluride (Cu3SbTe.- 10 II-III2-VI4 compound.- 10.0 Crystal structure and electronic structure.- 10.1 Zinc aluminum sulfide (ZnAl2S4).- 10.2 Zinc gallium sulfide (ZnGa2S4).- 10.3 Zinc gallium selenide (ZnGa2Se4).- 10.4 Zinc thioindate (ZnIn2S4).- 10.5 Zinc indium selenide (ZnIn2Se4).- 10.6 Zinc indium telluride (?n?n2?e4).- 10.7 Cadmium thioaluminate (CdAl2S4).- 10.8 Cadmium thiogallate (CdGa2S4).- 10.9 Cadmium gallium selenide (CdGa2Se4).- 10.10 Cadmium gallium telluride (CdGa2Te4).- 10.11 Cadmium thioindate (CdIn2S4).- 10.12 Cadmium indium selenide (CdIn2Se4).- 10.13 Cadmium indium telluride (CdIn2Te4).- 10.14 Cadmium thallium selenide (CdTl2Se4).- 10.15 Mercury thiogallate (HgGa2S4).- 10.16 Mercury gallium selenide (HgGa2Se4).- 10.17 Mercury indium telluride (HgIn2Te4).- 10.18 HgIn2Se4,Hg3In2Te6,Hg5In2Te.- 10.19 Further II-III2-VI4 compounds with II = Mg, Ca.- Further elements.- 11 Group III element.- 11.0 Crystal structure and electronic structure of boron.- 11.1 Physical properties of boron.- 12 Group V element.- 12.0 Crystal structure and electronic structure.- 12.1 Phosphorus (P).- 12.2 Arsenic (As).- 12.3 Antimony (Sb).- 12.4 Bismuth (Bi).- 13 Group VI element.- 13.0 Crystal structure and electronic structure.- 13.1 Sulfur (S).- 13.2 Selenium (Se).- 13.3 Tellurium (Te).- Further binary compounds.- 14 IAx-IBy compound.- 14.0 Crystal structure and electronic structure.- 14.1 CsAu.- 14.2 RbAu.- 15 Ix-Vy compound.- 15.0 Crystal structure and electronic structure.- 15.1 I-V compounds (NaSb, KSb, RbSb, CsSb).- 15.2 I3-V compounds.- 15.2.1 Lattice parameters and meltin temperatures.- 15.2.2 Li3Sb, Li3Bi.- 15.2.3 Na3Sb.- 15.2.4 K3Sb.- 15.2.5 Rb3Sb.- 15.2.6 Cs3Sb.- 15.2.7 Rb3Bi, Cs3Bi.- 15.3.- 15.3.1 Na2KSb.- 15.3.2 K2CsSb.- 15.3.3 Na2RbSb, Na2CsSb, K2RbSb, Rb2CsSb.- 16 Ix-VIy compound.- 16.0 Crystal structure and electronic structure.- 16.1 Cupric oxide (CuO).- 16.2 Cuprous oxide (Cu20).- 16.3 Copper sulfides (Cu2S, Cu2-xS).- 16.4 Copper selenides (Cu2Se, Cu2-xSe).- 16.5 Copper tellurides (Cu2Te, Cu2-xTe).- 16.6 Silver oxides (AgxOy).- 16.7 Silver sulfide (Ag2S).- 16.8 Silver selenide (Ag2Se).- 16.9 Silver telluride (Ag2Te).- 17 IIx-IVy compound.- 17.0 Crystal structure and electronic structure.- 17.1 Magnesium suicide (Mg2Si).- 17.2 Magnesium germanide (Mg2Ge).- 17.3 Magnesium stannide (Mg2Sn).- 17.4 Magnesium plumbide (Mg2Pb).- 17.5 Ca2Si, Ca2Sn, Ca2Pb.- 17.6 BaSi2, BaGe2, SrGe.- 18 Hx-Vy compound.- 18.0 Crystal structure and electronic structure.- 18.1 Magnesium arsenide (Mg3As2).- 18.2 Zinc phosphide (Zn3P2).- 18.3 Zinc arsenide (Zn3As2).- 18.4 Cadmium phosphide (Cd3P2).- 18.5 Cadmium arsenide (Cd3As2).- 18.6 Zinc phosphide (ZnP2).- 18.7 Zinc arsenide (ZnAs2).- 18.8 Cadmium phosphide (CdP2).- 18.9 Cadmium arsenide (CdAs2).- 18.10 Cadmium tetraphosphide (CdP4).- 18.11 Zinc antimonide (ZnSb).- 18.12 Cadmium antimonide (CdSb).- 18.13 Zinc antimonide (Zn4Sb3).- 18.14 Cadmium antimonide (Cd4Sb3).- 18.15 Cd.- 18.16 Cd.- 19 II-VII2 compound.- 19.0 Crystal structure and electronic structure.- 19.1 Cadmium dichloride (CdCl2).- 19.2 Cadmium dibromide (CdBr2).- 19.3 Cadmium diiodide (CdI2).- 19.4 Mercury diiodide (HgI2).- 20 IIIx-VIy compound.- 20.0 Crystal structure and electronic structure.- 20.1 Gallium sulfide (GaS).- 20.2 Gallium selenide (GaSe).- 20.3 Gallium telluride (GaTe).- 20.4 Indium sulfide (InS).- 20.5 Indium selenide (InSe).- 20.6 Indium telluride (InTe).- 20.7 Thallium sulfide (TlS).- 20.8 Thallium selenide (TlSe).- 20.9 Thallium telluride (TlTe).- 20.10 In6S7.- 20.11 In4Se3.- 20.12 In6Se7.- 20.13 In60Se40.- 20.14 In50Se50.- 20.15 In40Se60.- 20.16 In5Se6.- 20.17 In4Te3.- 20.18 Tl5Te3.- 20.19 TlGa2.- 20.20 TlGaSe2.- 20.21 TlGaTe2.- 20.22 TlIn2.- 20.23 TlInSe2.- 20.24 TlInTe2.- 21 III-VII compound.- 21.0 Crystal structure and electronic structure.- 21.1 Thallium fluoride (TlF).- 21.2 Thallium chloride (T1C1).- 21.3 Thallium bromide (TlBr).- 21.4 Thallium iodide (TlI).- 22 IV-V compound.- 22.0 Crystal structure and lattice parameters.- 22.1 SiP, Ge.- 22.2 SiAs.- 22.3 GeAs.- 22.4 SiP2, SiAs2.- 22.5 GeAs2.- 23 IVx-VIy compound.- 23.0 Crystal structure and electronic structure.- 23.1 Germanium sulfide (GeS).- 23.2 Germanium selenide (GeSe).- 23.3 Germanium telluride (GeTe).- 23.4 Tin sulfide (SnS).- 23.5 Tin selenide (SnSe).- 23.6 Tin telluride (SnTe).- 23.7 Lead monoxide (PbO).- 23.8 Lead sulfide (PbS).- 23.9 Lead selenide (PbSe).- 23.10 Lead telluride (PbTe).- 23.11 Germanium dioxide (GeO2).- 23.12 Germanium disulfide (GeS2).- 23.13 Germanium diselenide (GeSe2).- 23.14 Tin dioxide (SnO2).- 23.15 Tin disulfide (SnS2).- 23.16 Tin diselenide (SnSe2).- 23.17 Si2Te3.- 23.18 Sn2S3, PbSnS3, SnGeS3, PbGe3.- 24 IV-VII2 Compound.- 24.0 Crystal structure.- 24.1 Lead difluoride (PbF2).- 24.2 Lead dichloride (PbCl2).- 24.3 Lead dibromide (PbBr2).- 24.4 Lead diiodide (Pbl2).- 25 Vx-VIy Compound.- 25.0 Crystal structure and electronic structure.- 25.1 Arsenic oxide (As2O3).- 25.2 Arsenic sulfide (As2S3).- 25.3 Arsenic selenide (As2Se3).- 25.4 Arsenic telluride (As2Te3).- 25.5 Antimony sulfide (Sb2S3).- 25.6 Antimony selenide (Sb2Se3).- 25.7 Antimony telluride (Sb2Te3).- 25.8 Bismuth oxide (Bi2O3).- 25.9 Bismuth sulfide (Bi2S3).- 25.10 Bismuth selenide (Bi2Se3).- 25.11 Bismuth telluride (Bi2Te3).- 25.12 Realgar (As4S4).- 26 V-VII3 compound.- 26.0 Crystal structure and electronic structure.- 26.1 Arsenic triiodide (AsI3).- 26.2 Antimony triiodide (SbI3).- 26.3 Bismuth triiodide (BiI3).- Further ternary compounds.- 27 Ix-IVy-VIz compound.- 27.0 Crystal structure.- 27.1 Ag8GeS6 (argyrodite).- 27.2 Ag8SnS6 (canfieldite).- 27.3 Ag8SiSe6.- 27.4 Ag8GeSe6.- 27.5 Ag8SnSe6.- 27.6 Ag8GeTe6.- 27.7 Cu8Ge6.- 27.8 Cu8GeSe6.- 27.9 Cu4Ge3S5, Cu4Ge3Se5 and Cu4Sn3Se6.- 27.10 Cu4Sn4.- 28 Ix-Vy-VIz compound.- 28.0 Crystal structure and electronic structure.- 28.1 AgAs2.- 28.2 AgAsSe2.- 28.3 AgAsTe2.- 28.4 AgSb2.- 28.5 AgSbSe2.- 28.6 AgSbTe2.- 28.7 AgBi2.- 28.8 AgBiSe2.- 28.9 AgBiTe2.- 28.10 CuSbSe2.- 28.11 CuSbTe2.- 28.12 CuBiSe2.- 28.13 CuBiTe2.- 28.14 Ag3As3.- 28.15 Ag3Sb3.- 29 IIx-IIIy-VIz compound.- 29.0 Crystal structure of II-III-VI2 compounds.- 29.1 CdIn2.- 29.2 CdInSe2.- 29.3 CdInTe2.- 29.4 CdTl2.- 29.5 CdTlSe2.- 29.6 CdTlTe2.- 29.7 HgTl2.- 30 IIIx-Vy-VIz compound.- 30.0 Crystal structure of III-V-VI2 compounds.- 30.1 TlAs2.- 30.2 TlSb2.- 30.3 TlBi2.- 30.4 TlBiSe2.- 30.5 TlBiTe2.- 30.6 Ga6Sb5Te2.- 30.7 In6Sb5Te2.- 30.8 In7SbTe2.- 31 IVx-Vy-VIz compound.- 31.0 Crystal structure.- 31.1 Bi12Si20.- 31.2 Bi12Ge20.- 31.3 PbSb2S4, GeSb2Te4, GeBi2Te4,SnBi2Te4.- 31.4 GeBi4Te7, GeSb4Te7, PbBi4Te7.- 32 V-VI-VII compound.- 32.0 Crystal structure and electronic structure.- 32.1 AsSBr.- 32.2 Sb.- 32.3 SbSBr.- 32.4 SbSeBr.- 32.5 SbSe.- 32.6 SbTe.- 32.7 Bi.- 32.8 BiOBr.- 32.9 Bi.- 32.10 BiSCl.- 32.11 BiSBr.- 32.12 Bi.- 32.13 BiSeBr.- 32.14 BiSe.- 32.15 BiTeBr.- 32.16 BiTel.- 33 Further ternary compound.- 33.1 Cu3In5Se9.- 33.2 Cu3Ga5Se9.- 33.3 Ag3In5Se9.- 33.4 Ag3Ga5Se9.- 33.5 Cu2Ga4Te7.- 33.6 Cu2In4Te7.- 33.7 CuIn3Te5.- 33.8 AgIn3Te5.- 33.9 AgIn5S8.- 33.10 AgIn9Te14.- 33.11 Cd2Sn4.- 33.12 CdSn3.- 33.13 Li3Cu3.- 33.14 Hg3PS3, Hg3Ps4.- 33.15 Cd4(PAs)2(Cl,Br,I).- 34 Boron compound.- 34.1 Boron-hydrogen alloys.- 34.2 Binary boron-lithium compounds.- 34.3 Ternary boron-lithium compounds.- 34.4 Boron-sodium compounds.- 34.5 Boron-potassium compounds.- 34.6 Beryllium-aluminum-boron compounds.- 34.7 Boron-aluminum-magnesium compounds.- 34.8 Boron-alkaline earth compound.- 34.9 Aluminum-boron compounds.- 34.10 Boron-yttrium compounds.- 34.11 Lanthanide hexaborides.- 34.14 Boron compounds with group IV elements: boron carbide.- 34.15 Boron-silicon compounds.- 34.16 Boron-zirconium compounds.- 34.17 Boron-nitrogen compounds.- 34.18 Boron-phosphorus compounds.- 34.19 Boron-arsenic compounds.- 35 Binary transition metal compound.- 35.1.- 35.2.- 35.3.- 36 Binary rare earth compound.- 37 Ternary transition metal compound.- 37.1.- 37.2.- 37.3.- 38 Ternary rare earth compound.
£224.99
Springer Spektrum Geschichte Und Theorie Der Supraleiter: Eine
Book Synopsis
£9.99
Springer Fachmedien Wiesbaden Partielle Riccati-Differenzialgleichungen
Book SynopsisReiner Thiele leitet die Lösungen partieller Riccati-Differenzialgleichungen her und zeigt den Zusammenhang zwischen allgemeinem Integral und singulärer Lösung auf. Dazu appliziert er eine neue Zerlegungsmethode dieser nichtlinearen Differenzialgleichungen (DGL) in jeweils zwei lineare Gleichungen. Nach der Bestimmung der Eigenwerte liegen die Lösungen vor, die bei Faraday-Effekt-Stromsensoren auftreten und durch eine lineare Beziehung zwischen Messgröße und Messwert gekennzeichnet sind. Praxisrelevante Beispiele für Messgrößen und Messwerte beweisen die große Applikationsbreite der patentierten Faraday-Effekt-Stromsensoren des Autors.Der AutorProf. Dr.-Ing. Reiner Thiele lehrte an der Hochschule Zittau/Görlitz und lehrt an der Staatlichen Studienakademie Bautzen.Table of Contents
£9.99
Springer Selected Sensor Circuits: From Data Sheet to Simulation
Book SynopsisThis book shows the steps from data sheets of sensors to the extraction of model parameters for the program PSPICE in order to realize circuit analyses. Physical ENTITIES as temperature, humidity, light, pressure and sound are included by equations. The simulation concerns temperature displays, characteristics of humidity-sensors, light-to-voltage Converters, strain gauges, reed relays and Piezol-electric-sounders US-Converters and SAW ComponentsTable of ContentsNTC- and PTC-Sensors.- Band Gap Reference.- Humidity-Sensors.- RGB-Colour-Sensors.- light barreer.- force sensing resistor.- Hall-Sensor.- Piezoelectric sounder.- self-drive and external drive.- US-transmitter and -receiver.- SAW-Delay-Line
£28.49
Birkhauser Licht. Sehen. Gestalten.: Lichttechnische und
Book SynopsisEine effiziente, ökonomische und ökologische Lichtgestaltung ist integraler Bestandteil eines gelungenen Neubaus sowie der Altbausanierung. Praktiker, die sich für Lichttechnik und Wahrnehmungspsychologie interessieren, mussten bisher in beiden Spezialgebieten recherchieren. Mit „Licht.Sehen.Gestalten“ verbindet der Autor beide Themenbereiche in einem Buch. Dr. Walter Witting, jahrelanger Mitarbeiter von Professor Bartenbach, sammelte über Jahrzehnte Erfahrung auf beiden Gebieten. Das Know-how von Bartenbach bietet eine innovative und praxistaugliche Lösungskompetenz, die Eingang in dieses Handbuch findet: Es bietet Grundlagenwissen für Architekten, Lichtplaner, Designer sowie für verwandte Berufe wie Set-Designer, Verkehrsplaner, Mediziner und Psychologen und wendet sich gleichermaßen an Studierende derartiger Fachrichtungen. Die vorliegende Auflage wurde von Walter Witting komplett überarbeitet, korrigiert und durch weitere Illustrationen ergänzt. Neu hinzugekommen ist das Kapitel über „Das Phänomen Farbe“. Die Neuauflage dieses Referenzwerkes der Lichtliteratur bietet somit noch mehr lichttechnisches und wahrnehmungspsychologisches Wissen über den Umgang mit dem immateriellen Baustoff Licht.Trade Review"Unverzichtbar." Michael Krassnitzer in: Konstruktiv 298/2015 "Bibel über Licht." luxolumina, 11/2015 "Licht. Sehen. Gestalten. certainly has its place in offices and university libraries, as an introductory text to lighting design or as a general reference book." Veronika Egger in: Information Design Journal 22(2) 2016Table of ContentsLicht und Leben (Warm up), Licht und Physik (Lichttechnische Grundlagen), Licht und Auge (Psychophysiologie der Sehfunktionen), Licht und Wahrnehmung (Interpretative visuelle Apperzeption), Das Phänomen Farbe (Physikalisches und Psychologisches). Literaturverzeichnis, Stichwortverzeichnis, Abbildungsverzeichnis, Epilog Weitere Infos unter http://www.lichtundsehen.at/
£955.13
PHI Learning Electronic Devices and Circuits
Book SynopsisThis book is for undergrad EEE students, covering electronic circuits theory, semiconductors, devices like diodes and transistors, circuitry like amplifiers and oscillators, and IC fabrication. It includes solved examples, applications, and problems for learning reinforcement.
£15.68
Springer III-Nitride Based Light Emitting Diodes and
Book SynopsisLight emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.Table of Contents1: Introduction Part A. Progress and prospect of growth of wide-band-gap III-nitrides; Hiroshi Amano. 2: Introduction Part B. Ultra-efficient solid-state lighting: likely characteristics, economic benefits, technological approaches; Jeff Y. Tsao, et al. 3: Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates; Takashi Egawa and Osamu Oda. 4: Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates; Kazuyuki Tadatomo.5: Growth and optical properties of GaN-based non- and semipolar LEDs; Michael Kneissl et al.6: Active region Part A. Internal Quantum Efficiency in Light Emitting Diodes; Elison Matioli and Claude Weisbuch. 7: Active region Part B. Internal Quantum Efficiency; Jong-In Shim.8: Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs; Matteo Meneghini, et al. 9: Light extraction efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs; C. Lalau Keraly, et al. 10: Light extraction efficiency Part B. Light Extraction of High Efficient Light-Emitting Diodes; Ja-Yeon Kim, et al.11: Packaging. Phosphors and white LED packaging; Rong-Jun Xie and Naoto Hirosaki.12: High voltage LED; Wen-Yung Yeh, et al.13: Color Quality of White LEDs; Yoshi Ohno.14: Emerging System Level Applications for LED Technology; Robert F. Karlicek, Jr.
£80.99
Springer Verlag, Singapore Autonomous Underwater Vehicles: Localization,
Book SynopsisAutonomous underwater vehicles (AUVs) are emerging as a promising solution to help us explore and understand the ocean. The global market for AUVs is predicted to grow from 638 million dollars in 2020 to 1,638 million dollars by 2025 – a compound annual growth rate of 20.8 percent. To make AUVs suitable for a wider range of application-specific missions, it is necessary to deploy multiple AUVs to cooperatively perform the localization, tracking and formation tasks. However, weak underwater acoustic communication and the model uncertainty of AUVs make achieving this challenging. This book presents cutting-edge results regarding localization, tracking and formation for AUVs, highlighting the latest research on commonly encountered AUV systems. It also showcases several joint localization and tracking solutions for AUVs. Lastly, it discusses future research directions and provides guidance on the design of future localization, tracking and formation schemes for AUVs. Representing a substantial contribution to nonlinear system theory, robotic control theory, and underwater acoustic communication system, this book will appeal to university researchers, scientists, engineers, and graduate students in control theory and control engineering who wish to learn about the core principles, methods, algorithms, and applications of AUVs. Moreover, the practical localization, tracking and formation schemes presented provide guidance on exploring the ocean. The book is intended for those with an understanding of nonlinear system theory, robotic control theory, and underwater acoustic communication systems.Table of Contents1. Introduction 1.1 Dynamical Model of Autonomous Underwater Vehicles 1.2 Weak Communication Characteristic of Underwater Acoustic Communication 1.3 Existing Literatures on the Localization, Tracking and Formation 2. Persistent Localization of Autonomous Underwater Vehicles without Velocity Measurements 2.1 Introduction 2.2 System Model and Problem Formulation 2.3 Main Results 2.3.1 Persistent Localization Design 2.3.1.1 Observer-Based Motion Prediction Strategy Design 2.3.1.2 Graph-Based Persistent Localization Strategy Design 2.3.2 Performance Analysis 2.3.2.1 Stability Analysis 2.3.2.2 Convergence Analysis 2.3.2.3 Computational Overhead 2.3.2.4 Communication Overhead 2.4 Numerical Simulation 2.4.1 Simulation of Observer-based Motion Prediction 2.4.2 Simulation of Persistent Localization 2.5 Summary References 3. Joint Localization and Tracking of Autonomous Underwater Vehicle with State Disturbances 3.1 Introduction 3.2 System Model and Problem Formulation 3.3 Main Results 3.3.1 Joint Localization and Tracking Design 3.3.1.1 Self-Localization Method Design 3.3.1.2 Model-Free Tracking Controller Design 3.3.2 Performance Analysis 3.3.2.1 Convergence Analysis of Localization Method 3.3.2.2 Cramer-Rao Lower Bound of Localization Method 3.3.2.3 Boundness Analysis of Time-Delay Estimation Error 3.3.2.4 Convergence Analysis of Tracking Controller 3.4 Numerical Simulations and Experiments 3.4.1 Simulation of Self-Localization Method 3.4.2 Simulation of Tracking Controller 3.4.3 Experimental Results 3.5 Summary Reference 4. Joint Localization and Tracking of Autonomous Underwater Vehicle with Model Uncertainty 4.1 Introduction 4.2 System Model and Problem Formulation 4.3 Main Results 4.3.1 Joint Localization and Tracking Design 4.3.1.1 Self-Localization Algorithm Design 4.3.1.2 Reinforcement Learning Based Tracking Controller Design 4.3.2 Convergence Analysis of Tracking Controller 4.4 Numerical Simulation 4.4.1 Simulation of Self-Localization Method 4.4.2 Simulation of Tracking Controller 4.5 Summary Reference 5. Tracking Control of Autonomous Underwater Vehicle with time Delay and Actuator Saturation 5.1 Introduction 5.2 System Model and Problem Formulation 5.3 Main Results 5.3.1 Tracking Controller Design 5.3.2 Stability Condition and DOA Estimation 5.4 Numerical Simulations and Experiments 5.4.1 Simulation Results 5.4.2 Experimental Results 5.5 Summary Reference 6. Finite-Time Tracking Control of Autonomous Underwater Vehicle without Velocity Measurements 6.1 Introduction 6.2 System Model and Problem Formulation 6.3 Main Results 6.3.1 Finite-Time Tracking Controller Design 6.3.2 Performance Analysis 6.3.2.1 Stability Condition of Velocity Observer 6.3.2.1 Stability Analysis of Tracking Controller 6.4 Numerical Simulations and Experiments 6.4.1 Simulation Results 6.4.1.1 Simulation results of Velocity Observer 6.4.1.2 Simulation results of Tracking Controller 6.4.2 Experimental Results 6.5 Summary Reference 7. Formation Control of Autonomous Underwater Vehicles with Communication Delay 7.1 Introduction 7.2 System Model and Problem Formulation 7.3 Main Results 7.3.1 Tracking Control for Single-AUV System 7.3.2 Formation Control for Multi-AUV System 7.3.3 Performance Analysis 7.4 Numerical Simulations and Experiments 7.4.1 Simulation Results 7.4.2 Experimental Results 7.5 Summary Reference
£107.99
Springer Verlag, Singapore Advanced Energy and Control Systems: Select
Book SynopsisThis book gathers selected research papers presented at the Third International Conference on Energy Systems, Drives, and Automations (ESDA 2020). It covers a broad range of topics in the fields of renewable energy, power management, drive systems for electrical machines, and automation. In a spam of about a few interesting articles, effort had gone in to critically discuss about the control system, energy management and distribution in a unified approach common to electrical, Control and mechanical engineering. This book also comprehensively discusses a variety of related tools and techniques and will be a valuable resource for researchers, professionals, and students in electrical and mechanical engineering disciplines.Table of ContentsIndustrial Scenario of Renewable Energy BasedElectromobility.- Covid-19: Impact Analysis on Power Sector (A Comprehensive Review on Demand Change).- Electricity Price Forecasting using LSTM Network and K-means clustering by considering the effect of wind power generation.- Solid waste management challenges in India.- Electrochemical conversion of CO2 into useful chemicals and PKL electricity.- Graphical Approach to Recognize Optimal Distribution Network Reconfiguration.
£179.99
Springer Verlag, Singapore Application of Quantum Dots in Biology and
Book SynopsisThis book illustrates various applications of quantum dots (QDs) in the biomedical field and future perspectives. It first introduces the synthesis procedures and fundamental properties of QDs. In addition, the optical detection techniques and toxicologic reviews of QDs are presented. A focus of the book is also on the applications of QDs in cancer therapy, drug delivery, bio-sensing, and targeted molecular therapy. This book is exciting and valuable to a wide variety of readership communities (students, early-stage researchers, and scientists) in the various fields of biology and medicine.Table of ContentsIntroduction to Quantum Dots Synthetic Developments of Semiconductor Quantum Dot for Biological Applications All-Optical Detection of Biocompatible Quantum Dots A Toxicologic Review of Quantum Dots: Recent Insights and Future Directions Advantages And Disadvantages of Using Quantum Dots in Lateral Flow and Other Biological Assay Formats Recent Developments in Quantum Dots Technologies as Effective Theranostic Tools Against Cancer The Underlying Mechanism of Quantum Dot-Induced Apoptosis: Potential Application in Cancer Therapy Fluorescent Quantum Dots, A Technological Marvel for Optical Bio-Imaging: A Perspective on Associated In Vivo Toxicity Quantum Dots in Biosensing, Bioimaging and Drug Delivery Quantum Dots: Potential Cell Imaging Agent Quantum Dot: A Boon for Biological and Biomedical Research Upconversion and Downconversion Quantum Dots for Biomedical and Therapeutic Applications Present Status and Future Perspective
£85.49
Springer Verlag, Singapore Plasmonic Photocatalysis: Principles and
Book SynopsisThis book highlights the principles, research advances, and applications of plasmonic photocatalysis. As a new class of catalysts, plasmonic nanostructures with the unique ability to harvest solar energy across the entire visible spectrum and produce effective photocatalysis are viewed as a promising pathway for the energy crisis. Although plasmonic catalysis has been widely reported, the excitation mechanism and energy transfer pathway are still controversial. Meanwhile, the latest discovery of catalysis on nanomaterials is less reported. This book outlines the basics of plasmonic photocatalysis, including the electromagnetic properties of metal materials and surface plasmon, and discusses the catalytic mechanisms including the nearfield enhancements, hot electron, and thermal effects. In addition, the measurement methods and current advances on molecules and nanocrystals are presented in detail. Suitable for graduate students and researchers in physics, optics and optical engineering, and materials science, the book will deepen readers' understanding of the interaction between light and nanomaterials and expand their knowledge of the principles and applications of nanophotonics.Table of ContentsChapter 1. Introduction.- Chapter 2. Electromagnetic properties of materials.- Chapter 3. Fundamental of surface plasmons.- Chapter 4. Surface plasmon relaxation effects.- Chapter 5. Principles of plasmon-driven photocatalysis.- Chapter 6. Measurements of plasmon-driven photocatalysis.- Chapter 7. Plasmon-driven catalysis of molecular reactions.- Chapter 8. Water decomposition and phase transition of plasmon-driven photocatalysis.- Chapter 9. Plasmon-driven catalysis of material growth.
£33.24
Springer Verlag, Singapore Amplifiers in Radio Receivers: Characteristics,
Book SynopsisThis book presents the basics of building various types of amplifiers, the most widely used in the composition of modern specialized radio receivers, as well as the principles of building digital radio receivers. The rapid development of modern telecommunications systems, aviation equipment, and space systems for various functional purposes, as well as new information technologies, is inextricably linked with the theory of building radio receivers. Radio receivers are an integral part of the radio line, which largely determine the quality of its operation, both in normal operating conditions and in a complex interference environment. Since the creation of the first lightning detector in 1895, the technique of radio receiving devices went a long way to the development of modern automated digital systems. Table of ContentsIntroduction.- Chapter 1. Technical characteristics and block diagrams of radio receivers.- Chapter 2. Noise ratios in the receiving devices.- Chapter 3. Circuit fundamentals of input circuits and selective amplifiers.- Chapter 4. Selective amplifiers. Principles of optimization of their parameters.- Chapter 5. Multi-stage single-circuit selective amplifiers.- Chapter 6. Frequency converters.- Chapter 7. Low-noise amplifiers.- Chapter 8. Radio signal detectors.- Chapter 9. Adjustments in radio receivers.- Chapter 10. Digital radio devices.
£107.99
World Scientific Publishing Co Pte Ltd Gallium Nitride And Silicon Carbide Power Devices
Book SynopsisDuring the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
£95.40
Pan Stanford Publishing Pte Ltd Silicon Nanophotonics: Basic Principles, Current
Book SynopsisNanoscale materials are showing great promise in various optoelectronics applications, especially the fast-developing fields of optical communication and optical computers. With silicon as the leading material for microelectronics, the integration of optical functions into silicon technology is a very important challenge. This book concentrates on the optoelectronic properties of silicon nanocrystals, associated phenomena and related topics, from basic principles to the most recent discoveries. The areas of focus include silicon-based light-emitting devices, light modulators, optical wavevguides and interconnectors, optical amplifiers and memory elements. The book comprises theoretical and experimental analyses of various properties of silicon nanocrystals, research methods and preparation techniques, and some promising applications.Trade Review"Silicon Nanophotonics, edited by Leonid Khriachtchev, is a most useful and up-to-date collection of review articles covering the various aspects of silicon-based photonics, written by leading experts in the area. Both theoretical and experimental issues of silicon nanocrystals were considered, as well as device applications in both solid-state photonics and biology. This volume is an essential read for those working to make silicon shine as optoelectronics material."—Prof. Risto M. Nieminen, Helsinki University of Technology, FinlandTable of ContentsSilicon Nanocrystals Enabling Silicon Photonics. Theoretical Studies of Absorption, Emission and Gain in Silicon Nanostructures. Computational Studies of Free-Standing Silicon Nanoclusters. Optical Gain in Silicon Nanocrystal Waveguides Measured by the Variable Stripe Length Technique. Si-nc Based Light Emitters and Er Doping for Gain Materials. Silicon Nanocrystals: Structural and Optical Properties and Device Applications. Optical Spectroscopy of Individual Silicon Nanocrystals. Silicon Nanocrystal Memories,. Engineering the Optical Response of Nanostructured Silicon. Guiding and Amplification of Light Due to Silicon Nanocrystals Embedded in Waveguides. Silicon Nanocrystals in Silica: Optical Properties and Laser-Induced Thermal Effects. Light Emission from Silicon-Rich Nitride Nanostructures. Energy Efficiency in Silicon Photonics. Light Emitting Defects in Ion-Irradiated Alpha-Quartz and Silicon Nanoclusters. Auger Processes in Silicon Nanocrystals Assemblies. Biological Applications of Silicon Nanostructures.
£108.00
Pan Stanford Publishing Pte Ltd Biomaterials for MEMS
Book SynopsisThis book serves as a guide for practicing engineers, researchers, and students interested in MEMS devices that use biomaterials and biomedical applications. It is also suitable for engineers and researchers interested in MEMS and its applications but who do not have the necessary background in biomaterials.Biomaterials for MEMS highlights important features and issues of biomaterials that have been used in MEMS and biomedical areas. Hence this book is an essential guide for MEMS engineers or researchers who are trained in engineering institutes that do not provide the background or knowledge in biomaterials. The topics include fabrication of devices using biomaterials; biocompatible coatings and issues; thin-film biomaterials and MEMS for tissue engineering; and applications involving MEMS and biomaterials.Trade Review…up-to-date coverage of biomaterials and their use in MEMS for biomedical applications, including drug delivery, anti-biofouling and implantable devices. …a guide for practicing engineers, students and researchers. JC Chiao is a Professor of Electrical Engineering University of Texas at Arlington. He has received 4 awarded patents, his research interest include MEMS RF and optical devices, micro/ nanofabrication and applications, wireless sensors, medical micro devices and systems. M. Chiao's current research interests include design and fabrication of MEMS and nanodevices for biomedical applications. He is a recipient of the Young Innovator Award in 2006.—NeoPopRealism - Wonderpedia, Jan/Feb. 2012…up-to-date coverage of biomaterials and their use in MEMS for biomedical applications, including drug delivery, anti-biofouling and implantable devices. …a guide for practicing engineers, students and researchers. JC Chiao is a Professor of Electrical Engineering University of Texas at Arlington. He has received 4 awarded patents, his research interest include MEMS RF and optical devices, micro/ nanofabrication and applications, wireless sensors, medical micro devices and systems. M. Chiao's current research interests include design and fabrication of MEMS and nanodevices for biomedical applications. He is a recipient of the Young Innovator Award in 2006.—NeoPopRealism - Wonderpedia, Jan/Feb. 2012Table of ContentsIntroduction on Biomaterials for MEMS. Fabrication/Materials: Micromachining of Polymeric Materials. Polymers and Surface Coatings. Laser Deposition of Biomaterials. Devices and Applications: Biomaterials ofMEMS Devices for Use in the Human Body. Biodegradable Elastomers for Tissue Regeneration. Neuroregeneration. Biocompatible Flexible Microelectrodes. Micelles and Polymer MEMS Microvalves. Biocompatibility: Vibration Based Anti-Biofouling of Implants. Biomaterials for MEMS Drug Delivery. Characterization of Biomaterials.
£103.50
Pan Stanford Publishing Pte Ltd Disordered Semiconductors: Physics and
Book SynopsisThis textbook links characteristic features of atomic and electronic structures of disordered semiconductors to the device design process. It begins with a description of general concepts of disordered semiconductors, their atomic structures, the structure of energy bands, and their defects, as well as their electrical, optical, and photovoltaic properties. Since weak sensitivity to impurities is a distinguishing feature of disordered semiconductors, methods of property control and thin-film preparation methods are the areas of focus. Finally, applications of disordered semiconductors in various devices are considered.Trade Review"Readers of this book are taken on a logical journey beginning with three comprehensive chapters on the fundamental properties of disordered semiconductors, followed by two outlining the methods used to control the properties and fabricate thin films of these materials, and concluding with two chapters describing the current status of their applications. Students and scientists entering or working in the field will find it an exceedingly valuable and useful text."—Prof. E. A. Davis, University of Cambridge, UK"This book provides under a single cover and from a single perspective a description of physics and applications of disordered semiconductors. With complex issues explained using a simple language this book will be very valuable source of information for graduate and postgraduate students in the field of semiconductor physics and devices."—Dr Alex Kolobov, Advanced Industrial Science and Technology, Japan"This book comprehends a wide group of questions: atomic and electron structure, electrical, optical, photoelectric properties and application of disordered semiconductors, first of all the hydrogenated amorphous silicon, its alloys and chalcogenide glassy semiconductors. Important peculiarity of the book is the consideration of the main technologies of both thin films and devices fabrication. The book is interesting to all workers in the field."—Prof. Victor Lyubin, Ben-Gurion University, IsraelTable of ContentsPrefaceContentsIntroductionDefinition of Disordered StateClassification of Non-crystalline SystemsQualitative and Quantitative Characteristics of Glass-FormationAtomic Structure of Disordered SemiconductorsStructural Characteristics of SolidsShort Range and Medium Range OrderMethods of Investigation of Disordered System StructureSimulation of Disordered Material StructureResults of Structural Research of Disordered SemiconductorsElectronic Structure and Properties of Disordered SemiconductorsElectronic StructureElectrical Properties of Disordered SemiconductorsOptical Properties of Disordered SemiconductorsPhotoelectrical Properties of Disordered SemiconductorsMethods for Controlling Properties of Disordered SemiconductorsDoping of Hydrogenated Amorphous SiliconChemical Modification of Chalcogenide Glassy Semiconductor FilmsConductivity Type Inversion in Bulk Glassy ChalcogenideStructural Modification of Disordered Semiconductors PropertiesPreparation Methods of Disordered Semiconductor FilmsTechnological Distinctions of Chalcogenide Glassy Film PreparationPreparation of Hydrogenated Amorphous Silicon Films by GlowDischargeDecompositionMethodPreparation of AIV BIV Alloys on the Base of Hydrogenated Amorphous SiliconPreparation of Hydrogenated Amorphous Silicon Films by ChemicalVaporDeposition(CVD)MethodsPreparation of Hydrogenated Amorphous Silicon Films by Radio-frequency Sputtering MethodOptical Information Storage and Transmission DevicesDevices Based on Charge Pattern RecordingDevices based on Photo-induced Transformations in Chalcogenide GlassesPhotoelectric and Electronic Devices Based on Disordered SemiconductorsPhotovoltaic DevicesSwitching and Memory Devices on the Basis of Chalcogenide AlloysSilicon Thin Film TransistorsConclusionReferencesColor InsertsIndex
£103.50
Pan Stanford Publishing Pte Ltd Nanostructured Semiconductors: From Basic
Book SynopsisThis book focuses on nanostructured semiconductors, their fabrication, and their application in fields such as optics, acoustics, and biomedicine. It presents recent developments in nanostructured and hybrid materials and also contains a collection of principles and approaches related to nano-size semiconductors. The text summarizes the recent work by renowned scientists, emphasizing the synthesis by self-assembly or prestructuring and characterization methods of such nanosize materials and also discusses the potential applications of nanostructured semiconductors and hybrid systems. It also gives adequate coverage to the novel properties of nanostructured and low-dimensional materials.Table of ContentsA Meta Model for Electrochemical Pore Growth in Semiconductors. ew Approaches to the Production of Porous Silicon by Stain Etching. Silicon nanostructures by self-assembly and metal assisted etching. Synthesis and Characterization of Ge Nanocrystals. SiGe Nanostructures: From Fundamentals to Applications. Mesoporous Silica from Anodization of Silicon: Preparation and Morphologies. Filling of Porous Silicon with Metals by Electrochemical Reactions. Magnetic Nanostructures Embedded in a Porous Silicon Matrix. Manifestations of the Quantum Confinement Effect in the Phototransport Properties of Ensembles of Semiconductor Quantum Dots. Silicon Nanocrystals Embedded in SiO2 Matrices: Ab initio Results. Design of Composite and Multi-Component One-Dimensional Photonic Crystal Structures Based on Silicon. Si-Based Optical Resonators. Optical Properties of Nanoscale Si/SiO2 Superlattices. Nanosilicon for Advanced Post-Scaling Applications. Semiconductor Nanowires and Associated Polymeric Composites: Therapeutic Implications for Smart Tissue Engineering Scaffolds.
£109.25
Pan Stanford Publishing Pte Ltd Light-Induced Defects in Semiconductors
Book SynopsisThis book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.Trade Review"This book is an illuminating review covering some 40 years of active research in the physics of defects in semiconductors, as well as a concentrate of the most recent progress in the field. The authors, who are themselves important contributors in the domain of light-induced defects, present a clear and well-documented review, including spin-dependant effects and a profound analysis of the properties of amorphous semiconductors."Prof. Ionel Solomon, Laboratoire de Physique de la Matière Condensée, France"There is no book that attempts to explain the light-induced defect creations in both crystalline and disordered semiconductors. I am convinced that the present book provides a valuable source of information and resource for MSc and PhD students and researchers with specialization in condensed matter physics, physical chemistry, and related engineering fields."Prof. Koichi Shimakawa, Gifu University, Japan"The authors’ scientific contributions to this field are extremely high. This book introduces students of physics and materials science as well as senior research workers to light-induced defects in semiconductors. An excellent reference source of the topic can be found at the end of the book."Prof. Sandor Kugler, Budapest University of Technology and Economics, Hungary"This book presents an extensive review of photo-induced electronic properties of both crystalline and non-crystalline bulk semiconductors. It is a valuable source of reference for graduate students and all researchers in the fields of condensed matter physics, industrial physics, and materials science and engineering."Prof. Jai Singh, Charles Darwin University, AustraliaTable of ContentsIntroduction. Crystalline Semiconductors. Hydrogenated Amorphous Silicon. Hydrogenated Microcrystalline Silicon. Amorphous Chalcogenides. Appendix. Bibliography. Index.
£103.50
Pan Stanford Publishing Pte Ltd 50 Years in the Semiconductor Underground
Book SynopsisThis book was derived from a talk that the author gave at the International Conference on Advanced Nanodevices and Nanotechnology in Hawaii. The book is about science and engineering, but is not on science and engineering. It is not a textbook which develops the understanding of a small part of the field, but a book about random encounters and about the strengths and the foibles of living as a physicist and engineer for half a century. It presents the author’s personal views on science, engineering, and life and is illustrated by a number of lively stories about various events, some of which shaped his life. Trade Review"Professor Ferry combines, in a masterful way, topics that have represented the leading edge of semiconductor science and engineering. His discussions of engineering questions, as seen from the different viewpoints of Bohr and Einstein respectively, are amusing and will resonate with anyone who is getting tired of hearing that no one can understand quantum mechanics. A must read for the engineering student who is also a science fan." —Prof. Karl Hess, Author of Einstein Was Right!Table of ContentsIn the Beginning. Threads of Science. The Rise of the Chip. Challenging Physics. Some Views of Science. Science and Life May Be Fickle. The Light Side of Science. Arrogance and Ignorance. How Big Is an Electron.
£36.09
Jenny Stanford Publishing Physical Models for Quantum Wires, Nanotubes, and
Book SynopsisA compilation of articles that span more than 30 years of research on developing comprehensive physical models. Address the effect of quantum confinement on lattice vibrations, carriers scattering rates, and charge transport and present practical examples of solutions to the Boltzmann equation. Topics on quantum transport and spin effects in unidimensional molecular structures such as carbon nanotubes and graphene nanoribbons.Table of ContentsPart I: Semiconductor Quantum Wires 1. Size Effects on Polar Optical Phonon Scattering of One-Dimensional and Two-Dimensional Electron Gas in Synthetic Semiconductors 2. Self-Consistent Polaron Scattering Rates in Quasi-One-Dimensional Structures3. Plasmon Dispersion Relation of a Quasi-One-Dimensional Electron Gas 4. Size Effects in Multisubband Quantum Wire Structures 5. Impurity Scattering with Semiclassical Screening in Multiband Quasi-One-Dimensional Systems 6. Resonant Intersubband Optic Phonon Scattering in Quasi-One-Dimensional Structures 7. Intersubband Population Inversion in Quantum Wire Structures 8. Intersubband Resonant Effects of Dissipative Transport in Quantum Wires 9. Intersubband Optic Phonon Resonances in Electrostatically Confined Quantum Wires 10. Transient Simulation of Electron Emission from Quantum-Wire Structures 11. Carrier Capture in Cylindrical Quantum Wires 12. Electron-Phonon Interaction and Velocity Oscillations in Quantum Wire Structures 13. Transient and Steady-State Analysis of Electron Transport in One-Dimensional Coupled Quantum-Box Structures 14. Acoustic-Phonon Limited Mobility in Periodically Modulated Quantum Wires 15. Antiresonant Hopping Conductance and Negative Magnetoresistance in Quantum-Box Superlattices 16. Oscillatory Level Broadening in Superlattice Magnetotransport 17. Breakdown of the Linear Approximation to the Boltzmann Transport Equation in Quasi-One-Dimensional Semiconductors 18. Optic-Phonon-Limited Transport and Anomalous Carrier Cooling in Quantum-Wire Structures 19. lntersubband Stimulated Emission and Optical Gain by “Phonon Pumping” in Quantum Wires 20. Superlinear Electron Transport and Noise in Quantum Wires 21. Importance of Confined Longitudinal Optical Phonons in Intersubband and Backward Scattering in Rectangular AlGaAs/GaAs Quantum Wires 22. Confined and Interface Phonon Scattering in Finite Barrier GaAs/AlGaAs Quantum Wires 23. Hole Scattering by Confined Optical Phonons in Silicon Nanowires Part II: Carbon Nanotubes and Nanoribbons 24. Nonlinear Transport and Heat Dissipation in Metallic Carbon Nanotubes 25. Joule Heating Induced Negative Differential Resistance in Freestanding Metallic Carbon Nanotubes 26. Restricted Wiedemann–Franz Law and Vanishing Thermoelectric Power in One-Dimensional Conductors 27. High-Field Electrothermal Transport in Metallic Carbon Nanotubes 28. Atomic Vacancy Defects in the Electronic Properties of Semi-metallic Carbon Nanotubes 29. Chirality Effects in Atomic Vacancy–Limited Transport in Metallic Carbon Nanotubes 30. Vacancy Cluster–Limited Electronic Transport in Metallic Carbon Nanotubes 31. Vacancy-Induced Intramolecular Junctions and Quantum Transport in Metallic Carbon Nanotubes 32. On the Sensing Mechanism in Carbon Nanotube Chemiresistors 33. Defect Symmetry Influence on Electronic Transport of Zigzag Nanoribbons 34. Controllable Tuning of the Electronic Transport in Pre-designed Graphene Nanoribbon 35. Quantum Conduction through Double-Bend Electron Waveguide Structures 36. Quantum Ballistic Transport through a Double-Bend Waveguide Structure: Effects of Disorder 37. Quantum Transport through One-Dimensional Double-Quantum-Well Systems 38. Cascaded Spintronic Logic with Low-Dimensional Carbon
£243.00
