Description

Book Synopsis
This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods.

Table of Contents
Introduction.

Field Effect.

Metal Oxide Silicon Capacitor at Low Frequencies.

Metal Oxide Silicon Capacitor at Intermediate and High Frequencies.

Extraction of Interface Trap Properties from the Conductance.

Interfacial Nonuniformities.

Experimental Evidence for Interface Trap Properties.

Extraction of Interface Trap Properties from the Capacitance.

Measurement of Silicon Properties.

Charges, Barrier Heights, and Flatband Voltage.

Charge Trapping in the Oxide.

Instrumentation for Measuring Capacitor Characteristics.

Oxidation of Silicon--Oxidation Kinetics.

Oxidation of Silicon--Technology.

Control of Oxide Charges.

Models of the Interface.

Appendices.

Subject Index.

Symbol Index.

MOS Metal Oxide Semiconductor Physics and

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    A Paperback / softback by E. H. Nicollian, J. R. Brews

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      Publisher: John Wiley & Sons Inc
      Publication Date: Publication Date: 13/12/2002
      ISBN13: 9780471430797, 978-0471430797
      ISBN10: 047143079X
      Also in:
      Condensed matter physics Electronics and communications engineering

      Description

      Book Synopsis
      This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods.

      Table of Contents
      Introduction.

      Field Effect.

      Metal Oxide Silicon Capacitor at Low Frequencies.

      Metal Oxide Silicon Capacitor at Intermediate and High Frequencies.

      Extraction of Interface Trap Properties from the Conductance.

      Interfacial Nonuniformities.

      Experimental Evidence for Interface Trap Properties.

      Extraction of Interface Trap Properties from the Capacitance.

      Measurement of Silicon Properties.

      Charges, Barrier Heights, and Flatband Voltage.

      Charge Trapping in the Oxide.

      Instrumentation for Measuring Capacitor Characteristics.

      Oxidation of Silicon--Oxidation Kinetics.

      Oxidation of Silicon--Technology.

      Control of Oxide Charges.

      Models of the Interface.

      Appendices.

      Subject Index.

      Symbol Index.

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