Description

Book Synopsis

The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technologically important semiconductors by atomic hydrogen irradiation.

The book comprises discussions on experimental results from several techniques, enriched by state-of-the-art theoretical studies aimed at clarifying the origin of hydrogenation effects that lead to the discovery of specific nitrogen–hydrogen complexes. It presents techniques, such as infrared absorption spectroscopy, synchrotron radiation, and nuclear reaction analysis, which have indeed been crucial for addressing the physical origin of hydrogenation effects and their role in fine structural characterization.

The book is not a simple assembly of the contributions of different groups on the subject; it rather tells the complete story of the amazing effects of hydrogen irradiation from the first observations to the discovery of their origin and to potential technology transfer. The primary scope of the book is to guide PhD students and new scientists into the field and to inspire similar analysis approaches in other fields.



Trade Review

"The electrical and optical properties of the technologically and scientifically important dilute nitride semiconductors are strongly influenced by the introduction of atomic hydrogen. This volume is an excellent summary and resource for the most recent understanding of experimental results and state-of-the-art theoretical studies of the formation, reversibility, and microscopic structure of nitrogen–hydrogen complexes in these materials. The book details how a wide variety of experimental techniques have provided a detailed understanding of the role of hydrogen. It is the premier source for this subject and highly recommended for all those working on or with an interest in dilute nitrides."

—Prof. Steve Pearton, University of Florida, USA



Table of Contents

An Overview of Dilute Nitrides: Theory and Properties. Effects of Hydrogenation on the Electronic Properties of Dilute Nitrides. Effect of Hydrogen on Defects in Dilute Nitrides. Theory of Hydrogen in Dilute Nitrides. Microscopic Structure of N–Hn Complexes in Dilute Nitride Semiconductors Revealed by Their Vibrational Properties. Structure of Nitrogen–Hydrogen Complexes from X-Ray and Synchrotron Radiation Techniques. Stoichiometry of Nitrogen–Hydrogen Complexes in Dilute Nitrides. Technological Applications and Perspectives of Hydrogenated Dilute Nitrides.

Hydrogenated Dilute Nitride Semiconductors:

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A Hardback by Gianluca Ciatto

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    View other formats and editions of Hydrogenated Dilute Nitride Semiconductors: by Gianluca Ciatto

    Publisher: Pan Stanford Publishing Pte Ltd
    Publication Date: 01/04/2015
    ISBN13: 9789814463454, 978-9814463454
    ISBN10: 9814463450

    Description

    Book Synopsis

    The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technologically important semiconductors by atomic hydrogen irradiation.

    The book comprises discussions on experimental results from several techniques, enriched by state-of-the-art theoretical studies aimed at clarifying the origin of hydrogenation effects that lead to the discovery of specific nitrogen–hydrogen complexes. It presents techniques, such as infrared absorption spectroscopy, synchrotron radiation, and nuclear reaction analysis, which have indeed been crucial for addressing the physical origin of hydrogenation effects and their role in fine structural characterization.

    The book is not a simple assembly of the contributions of different groups on the subject; it rather tells the complete story of the amazing effects of hydrogen irradiation from the first observations to the discovery of their origin and to potential technology transfer. The primary scope of the book is to guide PhD students and new scientists into the field and to inspire similar analysis approaches in other fields.



    Trade Review

    "The electrical and optical properties of the technologically and scientifically important dilute nitride semiconductors are strongly influenced by the introduction of atomic hydrogen. This volume is an excellent summary and resource for the most recent understanding of experimental results and state-of-the-art theoretical studies of the formation, reversibility, and microscopic structure of nitrogen–hydrogen complexes in these materials. The book details how a wide variety of experimental techniques have provided a detailed understanding of the role of hydrogen. It is the premier source for this subject and highly recommended for all those working on or with an interest in dilute nitrides."

    —Prof. Steve Pearton, University of Florida, USA



    Table of Contents

    An Overview of Dilute Nitrides: Theory and Properties. Effects of Hydrogenation on the Electronic Properties of Dilute Nitrides. Effect of Hydrogen on Defects in Dilute Nitrides. Theory of Hydrogen in Dilute Nitrides. Microscopic Structure of N–Hn Complexes in Dilute Nitride Semiconductors Revealed by Their Vibrational Properties. Structure of Nitrogen–Hydrogen Complexes from X-Ray and Synchrotron Radiation Techniques. Stoichiometry of Nitrogen–Hydrogen Complexes in Dilute Nitrides. Technological Applications and Perspectives of Hydrogenated Dilute Nitrides.

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