Description
Book SynopsisA systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:
* An introductory chapter on the basic properties, growth process, and
Table of ContentsBasic Properties and Device Physics of III-V Materials.
Two-Terminal Heterojunction Devices.
HBT D.C. Characteristics.
HBT High-Frequency Properties.
FET D.C. Characteristics.
FET High-Frequency Properties.
Transistor Fabrication and Device Comparison.
Appendices.
Index.
