Description
Book SynopsisA combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS.
After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of bi
Table of Contents
Introduction. Strain Engineering in Microelectronics. Strain-Engineered Substrates. Electronic Properties of Engineered Substrates. Gate Dielectrics on Engineered Substrates. Heterostructure SiGe/SiGeC MOSFETs. Strained-Si Heterostructure MOSFETs. Modeling and Simulation of Hetero-FETs.
