Description

Book Synopsis
This book examines single-electron circuits as an introduction to the rapidly expanding field of nanoelectronics. It discusses both the analysis and synthesis of circuits with the nanoelectronic metallic single-electron tunneling (SET) junction device. The basic physical phenomena under consideration are the quantum mechanical tunneling of electrons through a small insulating gap between two metal leads, the Coulomb blockade and Coulomb oscillations — the last two resulting from the quantization of charge. The author employs an unconventional approach in explaining the operation and design of single-electron circuits.

Trade Review

"The spectacular evolution of microelectronics has demonstrated the power of the ‘circuit paradigm’. During the last decade, a broad class of nanoelectronic discrete devices has been proposed and successfully demonstrated; however, there still exists a gap between device physics and nanoelectronic integrated circuit design. This book offers an insight into an original and outstanding effort to bridge the gap between device physics and engineering of nanoelectronic integrated architectures. Original equivalent circuit models of metallic single-electron tunneling (SET) junctions and efficient analysis and synthesis techniques of nanoelectronic circuits are presented. This book in recommended to researchers and students interested in nanoscience and nanotechnology, especially in nanoelectronics."
—Arpad I. Csurgay, University, Hungary and University of Notre Dame, USA

"Single electron devices are promising candidates for next-generation circuits. By clarifying the relationship between models of different levels, this book offers useful knowledge on modeling which makes single electron devices treated the same as conventional transistors during circuit design. The new perspectives involved also help to conceive novel nano-devices. It is a very good reference for researchers who are engaged in this exciting area."
—Ning Deng, Tsinghua University, China



Table of Contents

Tunneling Experiments in Nanoelectronics. Current in Electrodynamics and Circuit Theory. Free Electrons in Quantum Mechanics. Current and Tunnel Current in Quantum Physics. Energy in Circuit Theory. Energy in the Switched Two-Capacitor Circuit. Impulse Circuit Model for Single-Electron Tunneling — Zero Tunneling Time. Impulse Circuit Model for Single-Electron Tunneling — Nonzero Tunneling Times. Generalizing the Theory to Multi-Junction Circuits. Single-Electron Tunneling Circuit Examples. Circuit Design Methodologies. More Potential Applications and Challenges.

Introduction to Nanoelectronic Single-Electron

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A Hardback by Jaap Hoekstra

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    View other formats and editions of Introduction to Nanoelectronic Single-Electron by Jaap Hoekstra

    Publisher: Pan Stanford Publishing Pte Ltd
    Publication Date: 31/10/2009
    ISBN13: 9789814241939, 978-9814241939
    ISBN10: 9814241938

    Description

    Book Synopsis
    This book examines single-electron circuits as an introduction to the rapidly expanding field of nanoelectronics. It discusses both the analysis and synthesis of circuits with the nanoelectronic metallic single-electron tunneling (SET) junction device. The basic physical phenomena under consideration are the quantum mechanical tunneling of electrons through a small insulating gap between two metal leads, the Coulomb blockade and Coulomb oscillations — the last two resulting from the quantization of charge. The author employs an unconventional approach in explaining the operation and design of single-electron circuits.

    Trade Review

    "The spectacular evolution of microelectronics has demonstrated the power of the ‘circuit paradigm’. During the last decade, a broad class of nanoelectronic discrete devices has been proposed and successfully demonstrated; however, there still exists a gap between device physics and nanoelectronic integrated circuit design. This book offers an insight into an original and outstanding effort to bridge the gap between device physics and engineering of nanoelectronic integrated architectures. Original equivalent circuit models of metallic single-electron tunneling (SET) junctions and efficient analysis and synthesis techniques of nanoelectronic circuits are presented. This book in recommended to researchers and students interested in nanoscience and nanotechnology, especially in nanoelectronics."
    —Arpad I. Csurgay, University, Hungary and University of Notre Dame, USA

    "Single electron devices are promising candidates for next-generation circuits. By clarifying the relationship between models of different levels, this book offers useful knowledge on modeling which makes single electron devices treated the same as conventional transistors during circuit design. The new perspectives involved also help to conceive novel nano-devices. It is a very good reference for researchers who are engaged in this exciting area."
    —Ning Deng, Tsinghua University, China



    Table of Contents

    Tunneling Experiments in Nanoelectronics. Current in Electrodynamics and Circuit Theory. Free Electrons in Quantum Mechanics. Current and Tunnel Current in Quantum Physics. Energy in Circuit Theory. Energy in the Switched Two-Capacitor Circuit. Impulse Circuit Model for Single-Electron Tunneling — Zero Tunneling Time. Impulse Circuit Model for Single-Electron Tunneling — Nonzero Tunneling Times. Generalizing the Theory to Multi-Junction Circuits. Single-Electron Tunneling Circuit Examples. Circuit Design Methodologies. More Potential Applications and Challenges.

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