Description
Book SynopsisThis study reviews an important reliability issue for both silicon and GaAs technologies. It surveys the status of electromigration physics in microelectronics, and summarizes various rate controlling details.
Table of ContentsReliability and Electromigration Degradation of GaAs MicrowaveMonolithic Integrated Circuits (A. Christou).
Simulation and Computer Models for Electromigration (P.Tang).
Temperature Dependencies on Electromigration (M. Pecht & P.Lall).
Electromigration and Related Failure Mechanisms in VLSIMetallizations (A. Christou & M. Peckerar).
Metallic Electromigration Phenomena (S. Krumbein).
Theoretical and Experimental Study of Electromigration (J.Zhao).
GaAs on Silicon Performance and Reliability (P. Panayotatos, etal.).
Electromigration and Stability of Multilayer Metal-SemiconductorSystems on GaAs (A. Christou).
Electrothermomigration Theory and Experiments in Aluminum Thin FilmMetallizations (A. Christou).
Reliable Metallization for VLSI (M. Peckerar).
Index.
