Description
Book SynopsisThis edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines. The section on ALD for logic devices covers both front-end of the line processes and back-end of the line processes.
Table of ContentsI.Introduction Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung) II.Fundamentals Chapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard) Chapter 3 . ALD simulations; Simon Elliott (Tyndall) III.ALD for memory devices Chapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang, Seong Keun Kim, and Sang Woon Lee (SNU) III-2. ALD for emerging memories Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM) Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon) IV.ALD for logic devices Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and Youngnam University) V.ALD machines Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu
