Description
Book SynopsisDespite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicongermanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots.
Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals.
World-recognized experts are the authors of the book's chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etc
Trade Review
"This book gives the state of the art in understanding and tailoring point defects in group IV semiconductors. The reader will find useful and complete information about the mechanisms of formation, migration, and interaction of intrinsic and extrinsic point defects in Si, Ge, and SiGe alloys. This is a unique feature of this work, as it offers the possibility of comparing the peculiar behavior of Si, Ge, and related alloys under one single cover."
—Professor Roberto Fornari, Department of Physics and Earth Sciences, University of Parma, Italy
"This book describes the growth models, impurities, defects, and nanocrystals of silicon, germanium, and their alloys. It is organized well and written by experts with high international reputation in this area. I am attracted by the content in this book. Especially, the book illustrates in detail the formation, diffusion, aggregation, and analysis of point defects not only in silicon, but also in germanium and their alloys, which [provides a] … better understanding of defects in element semiconductor materials. I would like to have this book on my shelf. It is an excellent reference for engineers, researchers, and students."
—Professor Deren Yang, State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, China
Table of ContentsModern Aspects of Czochralski and Multicrystalline Silicon Crystal Growth. Growth and Characterization of Silicon–Germanium Alloys. Germanium on Silicon: Epitaxy and Applications. Self-Interstitials in Silicon and Germanium. Vacancies in Si and Ge. Self- and Dopant Diffusion in Silicon, Germanium, and Their Alloys. Hydrogen in Si and Ge. Point Defect Complexes in Silicon. Defect Delineation in Silicon Materials by Chemical Etching Techniques. Investigation of Defects and Impurities in Silicon by Infrared and Photoluminescence Spectroscopies. Device Operation as Crystal Quality Probe. Silicon and Germanium Nanocrystals.
