Description

Book Synopsis
This volume provides a recent study of mathematical research on semiconductor equations. With recent developments in semiconductor technology, several mathematical models have been established to analyze and to simulate the behavior of electron flow in semiconductor devices. Among them, a hydrodynamic, an energy-transport and a drift-diffusion models are frequently used for the device simulation with the suitable choice, depending on the purpose of the device usage. Hence, it is interesting and important not only in mathematics but also in engineering to study a model hierarchy, relations among these models. The model hierarchy has been formally understood by relaxation limits letting the physical parameters, called relaxation times, tend to zero. The main concern of this volume is the mathematical justification of the relaxation limits. Precisely, we show that the time global solution for the hydrodynamic model converges to that for the energy-transport model as a momentum relaxation time tends to zero. Moreover, it is shown that the solution for the energy-transport model converges to that for the drift-diffusion model as an energy relaxation time tends to zero. For beginners' help, this volume also presents the physical background of the semiconductor devices, the derivation of the models, and the basic mathematical results such as the unique existence of time local solutions.Published by Mathematical Society of Japan and distributed by World Scientific Publishing Co. for all markets

Table of Contents
Introduction: Structure of Semiconductor Device; Mathematical Models; Review of Previous Results; Notation; Mathematical Problem and Main Results: Intial Boundary Value Problem for Hydrodynamic Model; Formal Computation of Relaxation Limits; Asymptotic Behavior of Hydrodynamic Model; Relaxation Time Limits; Outline of Proofs; Stationary Solutions: Unique Existence of Stationary Solutions; Relaxation Limits of Stationary Solutions; Energy-Transport Model: Uniform Estimate of Local Solution; Semi-Global Existence of Solution; Global Existence of Solution; Energy Relaxation Limit; Additional Regularity; Hydrodynamic Model: Uniform Estimate of Local Solution; Semi-Global Existence of Solution; Global Existence of Solution; Momentum and Energy Relaxation Limits; Appendices: Time Local Solvability of Energy-Transport Model; Time Local Solvability of Hydrodynamic Model.

Hierarchy Of Semiconductor Equations: Relaxation

    Product form

    £17.00

    Includes FREE delivery

    Order before 4pm today for delivery by Thu 13 Aug 2026.

    A Paperback / softback by Shinya Nishibata, Masahiro Suzuki

    Out of stock

      Trusted by thousands of customers. See 2,385+ Customer Reviews

      View other formats and editions of Hierarchy Of Semiconductor Equations: Relaxation by Shinya Nishibata

      Publisher: Mathematical Society of Japan
      Publication Date: Publication Date: 01/07/2011
      ISBN13: 9784931469662, 978-4931469662
      ISBN10: 4931469663

      Description

      Book Synopsis
      This volume provides a recent study of mathematical research on semiconductor equations. With recent developments in semiconductor technology, several mathematical models have been established to analyze and to simulate the behavior of electron flow in semiconductor devices. Among them, a hydrodynamic, an energy-transport and a drift-diffusion models are frequently used for the device simulation with the suitable choice, depending on the purpose of the device usage. Hence, it is interesting and important not only in mathematics but also in engineering to study a model hierarchy, relations among these models. The model hierarchy has been formally understood by relaxation limits letting the physical parameters, called relaxation times, tend to zero. The main concern of this volume is the mathematical justification of the relaxation limits. Precisely, we show that the time global solution for the hydrodynamic model converges to that for the energy-transport model as a momentum relaxation time tends to zero. Moreover, it is shown that the solution for the energy-transport model converges to that for the drift-diffusion model as an energy relaxation time tends to zero. For beginners' help, this volume also presents the physical background of the semiconductor devices, the derivation of the models, and the basic mathematical results such as the unique existence of time local solutions.Published by Mathematical Society of Japan and distributed by World Scientific Publishing Co. for all markets

      Table of Contents
      Introduction: Structure of Semiconductor Device; Mathematical Models; Review of Previous Results; Notation; Mathematical Problem and Main Results: Intial Boundary Value Problem for Hydrodynamic Model; Formal Computation of Relaxation Limits; Asymptotic Behavior of Hydrodynamic Model; Relaxation Time Limits; Outline of Proofs; Stationary Solutions: Unique Existence of Stationary Solutions; Relaxation Limits of Stationary Solutions; Energy-Transport Model: Uniform Estimate of Local Solution; Semi-Global Existence of Solution; Global Existence of Solution; Energy Relaxation Limit; Additional Regularity; Hydrodynamic Model: Uniform Estimate of Local Solution; Semi-Global Existence of Solution; Global Existence of Solution; Momentum and Energy Relaxation Limits; Appendices: Time Local Solvability of Energy-Transport Model; Time Local Solvability of Hydrodynamic Model.

      Recently viewed products

      © 2026 Book Curl

        • American Express
        • Apple Pay
        • Diners Club
        • Discover
        • Google Pay
        • Maestro
        • Mastercard
        • PayPal
        • Shop Pay
        • Union Pay
        • Visa

        Login

        Forgot your password?

        Don't have an account yet?
        Create account