Description
Book SynopsisThe performance of high-speed semiconductor devicesthe genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronicsis inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication.
GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possibleas well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to conside
Table of Contents
The Development of Gallium Arsenide Devices and IntegratedCircuits.
Gallium Arsenide Crystal Structure and Growth.
Epitaxial Growth Processes.
Process Techniques.
Lithography.
Device-Related Physics and Principles.
Metal-to-GaAs Contacts.
GaAs Metal-Semiconductor Field-Effect Transistor.
High Electron-Mobility Transistor (HEMT).
Heterojunction Bipolar Transistors.
Resonant-Tunneling Transistors.
Hot-Electron Transistors and Novel Devices.
GaAs FET Amplifiers and Monolithic Microwave IntegratedCircuits.
GaAs Digital Integrated Circuits.
High-Speed Photonic Devices.
Index.
