Description

Book Synopsis
Ultra Large Scale Integration (ULSI) refers to chips with more than 10,000,000 devices per chip. It is the natural outgrowth of VLSI (Very Large Scale Integration). ULSI Semiconductor Technology Atlas uses TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and associated problems.

Trade Review
"...provides a historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issue." (IEEE Solid-State Circuits Society Newsletter, January 2004)

"…strongly recommended…" (E-Streams, Vol. 7, No. 4)



Table of Contents

FOREWORD ix

PREFACE xi

PART I 1

1 Microelectronics and Microscopy 3

2 ULSI Process Technology 36

3 Applications of TEM for Construction Analysis 61

4 TEM Sample Preparation Techniques 90

PART II 141

5 Ion Implantation and Substrate Defects 143

6 Dielectrics and Isolation 179

7 Silicides, Polycide, and Salicide 256

8 Metallization and Interconnects 287

PART III 343

9 ULSI Devices I: DRAM Cell with Planar Capacitor 345

10 ULSI Devices II: DRAM Cell with Stacked Capacitor 365

11 ULSI Devices III: DRAM Cell with Trench Capacitor 399

12 ULSI Devices IV: SRAM 445

PART IV 475

13 TEM in Failure Analysis 477

14 Novel Devices and Materials 526

15 TEM in Under Bump Metallization (UBM) and Advanced Electronics Packaging Technologies 558

16 High-Resolution TEM in Microelectronics 609

INDEX 647

ULSI Semiconductor Technology Atlas

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    A Hardback by Chih-Hang Tung, George T. T. Sheng, Chih-Yuan Lu

      Trusted by thousands of customers. See 2,385+ Customer Reviews

      View other formats and editions of ULSI Semiconductor Technology Atlas by Chih-Hang Tung

      Publisher: John Wiley & Sons Inc
      Publication Date: 14/10/2003
      ISBN13: 9780471457725, 978-0471457725
      ISBN10: 0471457728

      Description

      Book Synopsis
      Ultra Large Scale Integration (ULSI) refers to chips with more than 10,000,000 devices per chip. It is the natural outgrowth of VLSI (Very Large Scale Integration). ULSI Semiconductor Technology Atlas uses TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and associated problems.

      Trade Review
      "...provides a historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issue." (IEEE Solid-State Circuits Society Newsletter, January 2004)

      "…strongly recommended…" (E-Streams, Vol. 7, No. 4)



      Table of Contents

      FOREWORD ix

      PREFACE xi

      PART I 1

      1 Microelectronics and Microscopy 3

      2 ULSI Process Technology 36

      3 Applications of TEM for Construction Analysis 61

      4 TEM Sample Preparation Techniques 90

      PART II 141

      5 Ion Implantation and Substrate Defects 143

      6 Dielectrics and Isolation 179

      7 Silicides, Polycide, and Salicide 256

      8 Metallization and Interconnects 287

      PART III 343

      9 ULSI Devices I: DRAM Cell with Planar Capacitor 345

      10 ULSI Devices II: DRAM Cell with Stacked Capacitor 365

      11 ULSI Devices III: DRAM Cell with Trench Capacitor 399

      12 ULSI Devices IV: SRAM 445

      PART IV 475

      13 TEM in Failure Analysis 477

      14 Novel Devices and Materials 526

      15 TEM in Under Bump Metallization (UBM) and Advanced Electronics Packaging Technologies 558

      16 High-Resolution TEM in Microelectronics 609

      INDEX 647

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