Description
Book SynopsisOne dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Table of ContentsEpitaxial Heterostructure Nanowires. Molecular beam epitaxial growth of GaN nanocolumns and related nanocolumn emitters. Novel GaNP nanowires for advanced optoelectronics and photonics. GaNAs-based nanowires for near-infrared optoelectronics. Dilute Bismide Nanowires. Ferromagnetic MnAs/III-V Hybrid Nanowires for Spintronics. GaAs-Fe3Si Semiconductor-Ferromagnet Core-Shell Nanowires for Spintronics. GaAs/AlGaOx Heterostructured Nanowires Synthesized by Post Growth Wet Oxidation. GaAs/SrTiO3 Core-Shell Nanowires. Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light emitters to nano-transistors. InP-related nanowires for light-emitting applications. InP/InAs quantum heterostructure nanowires. III-Nitride Nanowires and Their Laser, LED photovoltaic Applications. III-V nanowires: transistor and photovoltaic applications.
