Description
Book SynopsisLiquid-Phase Epitaxy is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50 of growth in the optoelectronics area is currently focussed on LPE.
Table of ContentsSeries Preface.
Preface.
Acknowledgements.
List of Contributors.
1. Introduction to Liquid Phase Epitaxy (Hans J. Scheel)
2. Liquid Phase Epitaxy in Russia Prior to 1990 (V.A. Mishurnyi)
3. Phase Diagrams and Modeling in Liquid Phase Epitaxy (Kazuo Nakajima)
4. Equipment and Instrumentation for Liquid Phase Epitaxy (Michael G. Mauk and James B. McNeely)
5. Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy (Michael G. Mauk)
6. Liquid Phase Epitaxy of Silicon Carbide (R. Yakimova and M. Syvajarvi)
7. Liquid Phase Epitaxy of Gallium Nitride (Hans J. Scheel and Dennis Elwell)
8. Liquid Phase Epitaxy of Quantum Wells and Quantum Dots (A. Krier, X.L. Huang and Z. Labadi)
9. Liquid Phase Epitaxy of Hg1-x CDx Te (MCT) (P. Capper)
10. Liquid Phase Epitaxy of Widegap II-VIs (J.F. Wang and M. Isshiki)
11. Liquid Phase Epitaxy of Garnets (Taketoshi Hibiya and Peter Gornert)
12. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications (Michael G. Mauk)
13. Liquid Phase Epitaxy for Light Emitting Diodes (Michael G. Mauk)
Index.
