Description

Book Synopsis

Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work:

  • Discusses THz sensing and imaging devices based on nano devices and materials
  • Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs)
  • Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results
  • Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available

    Trade Review

    "... a valuable reference for high-speed device and circuit researchers and design engineers."
    —James Chu, Kennesaw State University, Marietta, Georgia, USA, from IEEE Microwave Magazine, November 2015



    Table of Contents

    Terahertz Technology based on Nanoelectronic Devices. Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm. SiGe BiCMOS Technology and Devices. SiGe HBT Technology and Circuits for THz Applications. Multiwavelength Sub-THz Sensor Array with Integrated Lock-In Amplifier and Signal Processing in 90 nm CMOS Technology. 40/100 GbE Physical Layer Connectivity for Servers and Data Centers. Equalization and Multilevel Modulation for Multi-Gbps Chip-to-Chip Links. 25 G/40 G CMOS SerDes: Need, Architecture, and Implementation. Clock and Data Recovery Circuits.

HighSpeed Devices and Circuits with THz

    Product form

    £195.00

    Includes FREE delivery

    Order before 4pm today for delivery by Mon 31 Aug 2026.

    A Hardback by Jung Han Choi

    1 in stock

      Trusted by thousands of customers. See 2,385+ Customer Reviews

      View other formats and editions of HighSpeed Devices and Circuits with THz by Jung Han Choi

      Publisher: CRC Press Inc
      Publication Date: 22/07/2014
      ISBN13: 9781466590113, 978-1466590113
      ISBN10: 1466590114
      Also in:
      Electronics: circuits and components

      Description

      Book Synopsis

      Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work:

      • Discusses THz sensing and imaging devices based on nano devices and materials
      • Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs)
      • Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results
      • Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available

        Trade Review

        "... a valuable reference for high-speed device and circuit researchers and design engineers."
        —James Chu, Kennesaw State University, Marietta, Georgia, USA, from IEEE Microwave Magazine, November 2015



        Table of Contents

        Terahertz Technology based on Nanoelectronic Devices. Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm. SiGe BiCMOS Technology and Devices. SiGe HBT Technology and Circuits for THz Applications. Multiwavelength Sub-THz Sensor Array with Integrated Lock-In Amplifier and Signal Processing in 90 nm CMOS Technology. 40/100 GbE Physical Layer Connectivity for Servers and Data Centers. Equalization and Multilevel Modulation for Multi-Gbps Chip-to-Chip Links. 25 G/40 G CMOS SerDes: Need, Architecture, and Implementation. Clock and Data Recovery Circuits.

      Recently viewed products

      © 2026 Book Curl

        • American Express
        • Apple Pay
        • Diners Club
        • Discover
        • Google Pay
        • Maestro
        • Mastercard
        • PayPal
        • Shop Pay
        • Union Pay
        • Visa

        Login

        Forgot your password?

        Don't have an account yet?
        Create account