Description
Book SynopsisFirst introduced about a decade ago, the first edition of the Handbook of Semiconductor Interconnection Technology became widely popular for its thorough, integrated treatment of interconnect technologies and its forward-looking perspective. The field has grown tremendously in the interim and many of the "likely directions" outlined in the first edition are now standard in modern facilities. Reflecting those advances, this edition delves into the practical aspects of interconnections for manufacturing. It examines the interconnect and fabrication technologies now available, with an examination of future prospects for the field.
What's in this Edition:
Detailed discussion of electrochemical equipment for plating copper
Information on tools used for evaporation, chemical vapor deposition, and plasma processes
Emphasis on measurement of mechanical and thermal properties of insulators
Methods for characterizing porous dielectric thin films
Greater focus on integration issues and properties of titanium, cobalt, and nickel silicides
Process schemes based on the increased need for borderless contact gates and source/drain
Expanded discussion on choices for low-dielectric insulators
Concentration on electroplated copper, especially morphology of plated films and their properties
Developments in thin film liners and barriers
Expanded material on copper reliability
Table of ContentsMethods/Principles of Deposition and Etching; Geraldine Cogin Schwartz. Characterization; Geraldine Cogin Schwartz. Semiconductor Contact Technology; David R. Campbell, revised by Catherine Ivers. Interlevel Dielectrics; Geraldine Cogin Schwartz and K.V. Sriksrishnan. Metallization; Geraldine Cogin CSchwartz and K.V. Srikrishnan. Chip Integration; Geraldine Cogin Schwartz and K.V. Srikrishnan. Reliability; James R. Lloyd and Kenneth P. Rodbell. Index.
