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Book Synopsis
The operational useful lifetime of semiconductor electronic devices working in harsh radiation environments is limited by the structural defects induced by the exposure to ionizing radiation. This has immediate consequences for their use in high radiation environments, for example in nuclear facilities, satellites, radiotherapy, medical diagnostics, security and other industries. This publication establishes a standardized procedure to quantify the radiation hardness of semiconductor diode materials in a way that is independent of the irradiation parameters and biasing conditions of the device. The established parameter reflects the additional free charge carrier trapping cross section induced by the damaging radiation, normalized to the predicted concentration of generated vacancies by the same radiation. The effectiveness of the approach is validated through different types of ion beam irradiations, characterizations and materials used. The work leads towards approaches to predict the radiation induced effects on device performance for more complex electronic structures.

Guidelines for the Determination of Standardized

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      Book details

      Publisher IAEA
      Published 30 June 2023
      ISBN-13 9789201005229
      978-9201005229
      ISBN-10 9201005229
      Also in:
      Energy industries and utilities Nuclear physics Nuclear power and engineering

      Description

      Book Synopsis
      The operational useful lifetime of semiconductor electronic devices working in harsh radiation environments is limited by the structural defects induced by the exposure to ionizing radiation. This has immediate consequences for their use in high radiation environments, for example in nuclear facilities, satellites, radiotherapy, medical diagnostics, security and other industries. This publication establishes a standardized procedure to quantify the radiation hardness of semiconductor diode materials in a way that is independent of the irradiation parameters and biasing conditions of the device. The established parameter reflects the additional free charge carrier trapping cross section induced by the damaging radiation, normalized to the predicted concentration of generated vacancies by the same radiation. The effectiveness of the approach is validated through different types of ion beam irradiations, characterizations and materials used. The work leads towards approaches to predict the radiation induced effects on device performance for more complex electronic structures.

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