Description
Book SynopsisPart 1 Introduction.- Chapter 1 Introduction to Vertical GaN Power Electronics.- Chapter 2 Electronic Transport and Advances in Vertical Bulk GaN Based Power Semiconductor Devices.- Part 2 Bulk GaN Substrates.- Chapter 3 Bulk GaN.- Chapter 4 Near Equilibrium Ammonothermal (NEAT) Growth of Low Dislocation GaN for Power Devices.- Chapter 5 Use of HVPE for Growth of Bulk GaN Wafers and GaN Epilayers for Power Electronics Applications.- Chapter 6 X-ray Topography and High-Resolution X-ray Diffraction Characterization of GaN Materials for Power Electronics Applications.- Part 3 Epitaxial Growth of Gallium Nitride and Processing.- Chapter 7 Laser assisted MOCVD GaN and the Development of Vertical GaN-on-GaN PN diodes.- Chapter 8 MOCVD Growth of GaN Drift Layers on Bulk GaN Substrates for Power Electronic Devices.- Chapter 9 MBE Grown GaN P-N Diodes.- Chapter 10 Gallium Nitride Wafer Metrology and Device Processing.- Chapter 11 Layer Transfer of Gallium Nitride by Controlled Spalling.- Part 4 Selective Area Doping, Processes, and Characterization.- Chapter 12 In-situ TBCl Etching and Selective-Area Growth and Doping of GaN.- Chapter 13 Selective Area Regrowth and Doping for Vertical GaN Power Devices.- Chapter 14 Acceptor Dopant Ion Implant and Gyrotron Rapid Thermal Annealing of GaN.- Chapter 15 Ion Implantation for p-Type Conductivity in GaN.- Chapter 16 High Energy Ion Implantation using Electrostatic Accelerators.- Chapter 17 Solid State Diffusion in GaN.- Chapter 18 Transmutation Doping of GaN.- Part 5 Materials Characterization Techniques.- Chapter 19 Deep Level Defect Spectroscopy and Electron Beam-Induced Current Characterization of GaN Junctions.- Chapter 20 Ion Beam Analysis of GaN Surfaces and Interfaces.- Chapter 21 Structural and Chemical Defect Characterization for Selectively Doped GaN.- Chapter 22 Secondary Ion Mass Spectroscopy (SIMS) Analysis of GaN Epitaxial Films.- Part 6 Gallium Nitride Materials Properties for Power Electronics Devices.- Chapter 23 Intrinsic and Extrinsic Thermal Conductivity of Gallium Nitride and Silicon Carbide.- Chapter 24 Breakdown Phenomena in GaN.- Chapter 25 Theoretical Modeling of Avalanche Currents in GaN.- Part 7 Related Wideband Gap Materials and Devices.- Chapter 26 Cubic GaN: Growth, Characterization, and Applications.- Chapter 27 Development of Wafer-Scale h-BN Quasi-Bulk Crystals.- Part 8 Future Outlook.- Chapter 28 Outlook of Wide Bandgap Semiconductors and Power Electronics in the Energy Transition Towards a More Electric Future.
