Description

Book Synopsis

Morphological and textural variety of natural minerals pyrite as an example.- Strange mineral crystals found in volcano and mining sites.- Growth and modifications of crystals on airless surfaces.- Recent insights into the formation mechanisms of aluminium and iron oxides in aqueous solution.- Visualization of pH and ionic concentration for dissolving/forming crystals.- Crystal structure control technology for organic and biomaterials using light.- Microtexture and polymorphism observed during the molecular-beam epitaxial growth of group IIIV semiconductor nanostructures.- Crystal phase engineering in self-assisted GaAs Nanowires.- Exploration of nanowire photonics towards advent of ultra-smart societies.- Phase-selective synthesis of oxide materials via mist chemical vapor deposition.- Crystalline microstructure and versatile resistive switching property in rutile TiO2-x four-terminal memristors.

Engineering Crystal Habit

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    A Hardback by Fumitaro Ishikawa

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      Publisher: Springer
      Publication Date: 3/7/2025
      ISBN13: 9789819602650, 978-9819602650
      ISBN10: 9819602653
      Also in:
      Condensed matter physics

      Description

      Book Synopsis

      Morphological and textural variety of natural minerals pyrite as an example.- Strange mineral crystals found in volcano and mining sites.- Growth and modifications of crystals on airless surfaces.- Recent insights into the formation mechanisms of aluminium and iron oxides in aqueous solution.- Visualization of pH and ionic concentration for dissolving/forming crystals.- Crystal structure control technology for organic and biomaterials using light.- Microtexture and polymorphism observed during the molecular-beam epitaxial growth of group IIIV semiconductor nanostructures.- Crystal phase engineering in self-assisted GaAs Nanowires.- Exploration of nanowire photonics towards advent of ultra-smart societies.- Phase-selective synthesis of oxide materials via mist chemical vapor deposition.- Crystalline microstructure and versatile resistive switching property in rutile TiO2-x four-terminal memristors.

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