Description
Book SynopsisAn exploration of electric refractory materials, this book covers developments of blue light-emitting diodes using GaN-based nitrides for laser and high-temperature and -frequency devices. Electric Refractory Materials introduces growth and evaluation standards of films and bulk crystals, with consideration of band structure, surface electronic structure, and lattice vibrations. It also covers heat capacity and thermal conductivity, irradiation properties, and selective surfaces. Focusing on diamond material, the book examines its synthesis and characterization as well as its electrical, optical, and conductive properties. The book also discusses the use of silicon carbide, boron compounds, and other material used in electronic and light-emitting devices.
Table of ContentsImportance and research programme of electric refractory materials; survey of refractory matalloids - transition metal carbides, nitrides and diborides; bulk crystal growth; thin-film preparation; electronic structure; lattice vibrations, heat capacity, and related properties; electrical and thermal conductivity and related transport properties at low temperatures; high-temperature characteristics; surface electronic structures and surface reactivities; irradiation properties of electric refractory materials; transition metal carbide field emitters; NbN superconducting devices; solar absorbers - selective surfaces; metalloids for plasma-facing materials; synthesis of diamond from the gas phase; the electrical and optical properties of diamond; semiconducting diamond and diamond devices; SiC boule growth; epitaxial growth, characterization, and properties of SiC; silicon carbide power electronic devices; science and technology of boron nitride; boron phosphide; boron and boron-rich compounds; boron films; single crystal of AIN; AIN sintered polycrystal; GaN-AIN-InN blue light-emitting devices.
