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Book Synopsis
This compilation first presents a brief literature overview of ferromagnetism in zinc oxide, as well as a survey on ion implantation and irradiation-mediated ferromagnetism. The authors highlight the intrinsic and extrinsic origins of ferromagnetism in 200 KeV Ni+2 ion implanted ZnO (Ni: ZnO)/undoped ZnO. The authors also discusse spin dynamics studies that have been carried out on graphene-based derivatives such as graphene-like nano carbon, nitrogen derivative graphene-like nano carbo, reduced graphene oxide and tellurium-incorporated reduced-graphene oxide for using electron spin resonance. Lastly, Spintronics: A Review and Directions for Research establishes the inducing of spintronic behaviour in a semiconductor-based multiferroic material, BiFeO3, through the site-engineering approach. The unique electronic band structure of a spintronic material with 100% spin polarization impacts the electron transport mechanism significantly, with an increase in the efficiency in the performance of memory storage devices.

Spintronics: A Review and Directions for Research

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    A Paperback / softback by Arthur R. Hampton

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      Publisher: Nova Science Publishers Inc
      Publication Date: Publication Date: 27/09/2019
      ISBN13: 9781536145267, 978-1536145267
      ISBN10: 1536145262

      Description

      Book Synopsis
      This compilation first presents a brief literature overview of ferromagnetism in zinc oxide, as well as a survey on ion implantation and irradiation-mediated ferromagnetism. The authors highlight the intrinsic and extrinsic origins of ferromagnetism in 200 KeV Ni+2 ion implanted ZnO (Ni: ZnO)/undoped ZnO. The authors also discusse spin dynamics studies that have been carried out on graphene-based derivatives such as graphene-like nano carbon, nitrogen derivative graphene-like nano carbo, reduced graphene oxide and tellurium-incorporated reduced-graphene oxide for using electron spin resonance. Lastly, Spintronics: A Review and Directions for Research establishes the inducing of spintronic behaviour in a semiconductor-based multiferroic material, BiFeO3, through the site-engineering approach. The unique electronic band structure of a spintronic material with 100% spin polarization impacts the electron transport mechanism significantly, with an increase in the efficiency in the performance of memory storage devices.

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