Description

Book Synopsis
As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories

Table of Contents
Next Generation Memory Technologies.- Architecting PCM for Main Memories.- Tolerating Slow Writes in PCM.- Wear Leveling for Durability.- Wear Leveling Under Adversarial Settings.- Error Resilience in Phase Change Memories.- Storage and System Design With Emerging Non-Volatile Memories.

Phase Change Memory: From Devices to Systems

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    A Paperback by Naveen Muralimanohar, Moinuddin K. Qureshi, Sudhanva Gurumurthi

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      Book details

      Publisher Springer International Publishing AG
      Published 2 December 2011
      ISBN-13 9783031006074
      978-3031006074
      ISBN-10 3031006070

      Description

      Book Synopsis
      As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories

      Table of Contents
      Next Generation Memory Technologies.- Architecting PCM for Main Memories.- Tolerating Slow Writes in PCM.- Wear Leveling for Durability.- Wear Leveling Under Adversarial Settings.- Error Resilience in Phase Change Memories.- Storage and System Design With Emerging Non-Volatile Memories.

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