Description
Book SynopsisWritten by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV.
The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys
Table of Contents
Molecular-beam epitaxy of InN 1. Thermal stability, surface kinetics, and MBE growth diagrams for N- and In-face InN. Polarity-dependent epitaxy control of InN, InGaN and InAlN. InN in brief: Conductivity and chemical trends. Transport properties of InN. Electronic states in InN and lattice dynamics of InN and InGaN. Optical properties of InN and related alloys. Theory of InN bulk band structure. Ellipsometry of InN and related alloys. Electronic properties of InN and InGaN: Defects and doping. Theory of native point defects and impurities in InN. Surface electronic properties of InN and related alloys. Theory of InN surfaces. Structure of InN and InGaN: Transmission electron microscopy studies. InN-based dilute magnetic semiconductors. InN-based low dimensional structures. InN nanocolumns.
