Description
Book SynopsisCMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Table of ContentsRF MOS measurements, F. Sischka and T. Gneiting; MOSFET modelling and parameter extraction for RF IC's, M. Je et al; MOSFET modelling for RF IC design, Y. Cheng; RF CMOS noise characterization and modelling, C.-H. Chen and M.J. Deen; SOI CMOS transistors for RF and microwave applications, D. Flandre et al; RF CMOS reliability, S. Naseh and M.J. Deen.
