Description

Book Synopsis

Comprehensive reference on the fundamental principles and basic physics dictating metaloxidesemiconductor field-effect transistor (MOSFET) operation

Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metaloxidesemiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology.

The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFE

Advanced Nanoscale MOSFET Architectures

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    RRP £102.00 – you save £10.20 (10%)

    Order before 4pm today for delivery by Mon 22 Jun 2026.

    A Hardback by K Biswas


      View other formats and editions of Advanced Nanoscale MOSFET Architectures by K Biswas

      Publisher: John Wiley & Sons Inc
      Publication Date: 1/24/2024
      ISBN13: 9781394188949, 978-1394188949
      ISBN10: 1394188943

      Description

      Book Synopsis

      Comprehensive reference on the fundamental principles and basic physics dictating metaloxidesemiconductor field-effect transistor (MOSFET) operation

      Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metaloxidesemiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology.

      The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFE

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