{"product_id":"theory-of-modern-electronic-semiconductor-devices-a-wileyinterscience-publication-9780471415411","title":"Theory of Modern Electronic Semiconductor Devices","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003eA thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors.\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTrade Review\u003c\/b\u003e\u003cbr\u003e\"A discussion of important emerging technologies and trends in semiconductor devices...\" SciTech Book News\u003cbr\u003e\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003ePREFACE.\u003cbr\u003e \u003cbr\u003e 1 OVERVIEW OF SEMICONDUCTOR DEVICE TRENDS.\u003cbr\u003e \u003cbr\u003e 1.1 Moore's Law and Its Implications.\u003cbr\u003e \u003cbr\u003e 1.2 Semiconductor Devices for Telecommunications.\u003cbr\u003e \u003cbr\u003e 1.3 Digital Communications.\u003cbr\u003e \u003cbr\u003e 2 SEMICONDUCTOR HETEROSTRUCTURES.\u003cbr\u003e \u003cbr\u003e 2.1 Formation of Heterostructures.\u003cbr\u003e \u003cbr\u003e 2.2 Modulation Doping.\u003cbr\u003e \u003cbr\u003e 2.3 Two-Dimensional Subband Transport at Heterointerfaces.\u003cbr\u003e \u003cbr\u003e 2.4 Strain and Stress at Heterointerfaces.\u003cbr\u003e \u003cbr\u003e 2.5 Perpendicular Transport in Heterostructures and Superlattices.\u003cbr\u003e \u003cbr\u003e 2.6 Heterojunction Materials Systems: Intrinsic and Extrinsic Properties.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 3 HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS.\u003cbr\u003e \u003cbr\u003e 3.1 Motivation.\u003cbr\u003e \u003cbr\u003e 3.2 Basics of Heterostructure Field-Effect Transistors.\u003cbr\u003e \u003cbr\u003e 3.3 Simplified Long-Channel Model of a MODFET.\u003cbr\u003e \u003cbr\u003e 3.4 Physical Features of Advanced State-of-the-Art MODFETs.\u003cbr\u003e \u003cbr\u003e 3.5 High-Frequency Performance of MODFETs.\u003cbr\u003e \u003cbr\u003e 3.6 Materials Properties and Structure Optimization for HFETs.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 4 HETEROSTRUCTURE BIPOLAR TRANSISTORS.\u003cbr\u003e \u003cbr\u003e 4.1 Review of Bipolar Junction Transistors.\u003cbr\u003e \u003cbr\u003e 4.2 Emitter-Base Heterojunction Bipolar Transistors.\u003cbr\u003e \u003cbr\u003e 4.3 Base Transport Dynamics.\u003cbr\u003e \u003cbr\u003e 4.4 Nonstationary Transport Effects and Breakdown.\u003cbr\u003e \u003cbr\u003e 4.5 High-Frequency Performance of HBTs.\u003cbr\u003e \u003cbr\u003e 4.6 Materials Properties and Structure Optimization for HBTs .\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 5 TRANSFERRED ELECTRON EFFECTS, NEGATIVE DIFFERENTIAL RESISTANCE, AND DEVICES.\u003cbr\u003e \u003cbr\u003e 5.1 Introduction.\u003cbr\u003e \u003cbr\u003e 5.2 k-Space Transfer.\u003cbr\u003e \u003cbr\u003e 5.3 Real-Space Transfer.\u003cbr\u003e \u003cbr\u003e 5.4 Consequences of NDR in a Semiconductor.\u003cbr\u003e \u003cbr\u003e 5.5 Transferred Electron-Effect Oscillators: Gunn Diodes.\u003cbr\u003e \u003cbr\u003e 5.6 Negative Differential Resistance Transistors.\u003cbr\u003e \u003cbr\u003e 5.7 IMPATT Diodes.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 6 RESONANT TUNNELING AND DEVICES.\u003cbr\u003e \u003cbr\u003e 6.1 Physics of Resonant Tunneling: Qualitative Approach.\u003cbr\u003e \u003cbr\u003e 6.2 Physics of Resonant Tunneling: Envelope Approximation.\u003cbr\u003e \u003cbr\u003e 6.3 Inelastic Phonon Scattering Assisted Tunneling: Hopping Conduction.\u003cbr\u003e \u003cbr\u003e 6.4 Resonant Tunneling Diodes: High-Frequency Applications.\u003cbr\u003e \u003cbr\u003e 6.5 Resonant Tunneling Diodes: Digital Applications.\u003cbr\u003e \u003cbr\u003e 6.6 Resonant Tunneling Transistors.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 7 CMOS: DEVICES AND FUTURE CHALLENGES.\u003cbr\u003e \u003cbr\u003e 7.1 Why CMOS?\u003cbr\u003e \u003cbr\u003e 7.2 Basics of Long-Channel MOSFET Operation.\u003cbr\u003e \u003cbr\u003e 7.3 Short-Channel Effects.\u003cbr\u003e \u003cbr\u003e 7.4 Scaling Theory.\u003cbr\u003e \u003cbr\u003e 7.5 Processing Limitations to Continued Miniaturization.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 8 BEYOND CMOS: FUTURE APPROACHES TO COMPUTING HARDWARE.\u003cbr\u003e \u003cbr\u003e 8.1 Alternative MOS Device Structures: SOI, Dual-Gate FETs, and SiGe.\u003cbr\u003e \u003cbr\u003e 8.2 Quantum-Dot Devices and Cellular Automata.\u003cbr\u003e \u003cbr\u003e 8.3 Molecular Computing.\u003cbr\u003e \u003cbr\u003e 8.4 Field-Programmable Gate Arrays and Defect-Tolerant Computing.\u003cbr\u003e \u003cbr\u003e 8.5 Coulomb Blockade and Single-Electron Transistors.\u003cbr\u003e \u003cbr\u003e 8.6 Quantum Computing.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 9 MAGNETIC FIELD EFFECTS IN SEMICONDUCTORS.\u003cbr\u003e \u003cbr\u003e 9.1 Landau Levels.\u003cbr\u003e \u003cbr\u003e 9.2 Classical Hall Effect.\u003cbr\u003e \u003cbr\u003e 9.3 Integer Quantum Hall Effect.\u003cbr\u003e \u003cbr\u003e 9.4 Fractional Quantum Hall Effect.\u003cbr\u003e \u003cbr\u003e 9.5 Shubnikov-de Haas Oscillations.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e REFERENCES.\u003cbr\u003e \u003cbr\u003e APPENDIX A: PHYSICAL CONSTANTS.\u003cbr\u003e \u003cbr\u003e APPENDIX B: BULK MATERIAL PARAMETERS.\u003cbr\u003e \u003cbr\u003e Table I: Silicon.\u003cbr\u003e \u003cbr\u003e Table II: Ge.\u003cbr\u003e \u003cbr\u003e Table III: GaAs.\u003cbr\u003e \u003cbr\u003e Table IV: InP.\u003cbr\u003e \u003cbr\u003e Table V: InAs.\u003cbr\u003e \u003cbr\u003e Table VI: InN.\u003cbr\u003e \u003cbr\u003e Table VII: GaN.\u003cbr\u003e \u003cbr\u003e Table VIII: SiC.\u003cbr\u003e \u003cbr\u003e Table IX: ZnS.\u003cbr\u003e \u003cbr\u003e Table X: ZnSe.\u003cbr\u003e \u003cbr\u003e Table XI : Al x Ga 1 fx As.\u003cbr\u003e \u003cbr\u003e Table XI I : Ga 0:47 In 0:53 As.\u003cbr\u003e \u003cbr\u003e Table XIII: Al 0:48 In 0:52 As.\u003cbr\u003e \u003cbr\u003e Table XI V: Ga 0:5 In 0:5 P.\u003cbr\u003e \u003cbr\u003e Table XV: Hg 0:70 Cd 0:30 Te.\u003cbr\u003e \u003cbr\u003e APPENDIX C: HETEROJUNCTION PROPERTIES.\u003cbr\u003e \u003cbr\u003e INDEX.","brand":"John Wiley \u0026 Sons Inc","offers":[{"title":"Default Title","offer_id":49402590101847,"sku":"9780471415411","price":140.35,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0817\/1739\/5799\/files\/9780471415411.jpg?v=1730480872","url":"https:\/\/bookcurl.com\/products\/theory-of-modern-electronic-semiconductor-devices-a-wileyinterscience-publication-9780471415411","provider":"Book Curl","version":"1.0","type":"link"}