{"product_id":"soi-lubistors-9781118487907","title":"SOI Lubistors","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003e\u003cp\u003e\u003cb\u003e\u003ci\u003eAdvanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors\u003c\/i\u003e\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eNo comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit.\u003c\/p\u003e \u003cp\u003eThe author also reviews the physics and the modeling of \u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003ePreface xiii  \u003c\/p\u003e\u003cp\u003eAcknowledgements xv\u003c\/p\u003e \u003cp\u003eIntroduction to an Exotic Device World xvii\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart One BRIEF REVIEWAND MODERN APPLICATIONS OF PN-JUNCTION DEVICES\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e1 Concept of an Ideal pn Junction 3\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eReferences 4\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2 Understanding the Non-ideal pn Junction – Theoretical Reconsideration 7\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e2.1 Introduction 7\u003c\/p\u003e \u003cp\u003e2.2 Bulk pn-Junction Diode 8\u003c\/p\u003e \u003cp\u003e2.2.1 Assumptions 8\u003c\/p\u003e \u003cp\u003e2.2.2 Model A – Low Doping Case 9\u003c\/p\u003e \u003cp\u003e2.2.3 Model B – High Doping Case 18\u003c\/p\u003e \u003cp\u003e2.3 Bulk pn-Junction Diode – Reverse Bias 24\u003c\/p\u003e \u003cp\u003e2.3.1 Model A – Low Doping Case 24\u003c\/p\u003e \u003cp\u003e2.3.2 Model B – High Doping Case 25\u003c\/p\u003e \u003cp\u003e2.4 The Insulated-Gate pn Junction of the SOI Lubistor – Forward Bias 32\u003c\/p\u003e \u003cp\u003e2.4.1 The Positive Gate Voltage Condition 32\u003c\/p\u003e \u003cp\u003e2.4.2 The Negative Gate Voltage Condition 35\u003c\/p\u003e \u003cp\u003e2.5 The Insulated-Gate pn Junction of the\u003c\/p\u003e \u003cp\u003eSOI Lubistor – Reverse Bias 35\u003c\/p\u003e \u003cp\u003eReferences 37\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3 Modern Applications of the pn Junction 39\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eReferences 40\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart Two PHYSICS AND MODELING OF SOI LUBISTORS – THICK-FILM DEVICES\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4 Proposal of the Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor) 43\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e4.1 Introduction 43\u003c\/p\u003e \u003cp\u003e4.2 Device Structure and Parameters 43\u003c\/p\u003e \u003cp\u003e4.3 Discussion of Current–Voltage Characteristics 45\u003c\/p\u003e \u003cp\u003e4.4 Summary 47\u003c\/p\u003e \u003cp\u003eReferences 47\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5 Experimental Consideration for Modeling of Lubistor Operation 49\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e5.1 Introduction 49\u003c\/p\u003e \u003cp\u003e5.2 Experimental Apparatus 49\u003c\/p\u003e \u003cp\u003e5.3 Current–Voltage Characteristics of Lubistors 52\u003c\/p\u003e \u003cp\u003e5.4 Lubistor Potential Profiles and Features 56\u003c\/p\u003e \u003cp\u003e5.5 Discussion 57\u003c\/p\u003e \u003cp\u003e5.5.1 Simplified Analysis of Lubistor Operation 57\u003c\/p\u003e \u003cp\u003e5.5.2 On the Design of Lubistors 60\u003c\/p\u003e \u003cp\u003e5.6 Summary 61\u003c\/p\u003e \u003cp\u003eReferences 61\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6 Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations 63\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e6.1 Introduction 63\u003c\/p\u003e \u003cp\u003e6.2 Device Structure and Measurement System 63\u003c\/p\u003e \u003cp\u003e6.3 Equivalent Circuit Models of an SOI Lubistor 65\u003c\/p\u003e \u003cp\u003e6.3.1 Device Simulation 65\u003c\/p\u003e \u003cp\u003e6.3.2 Equivalent Circuit Models 68\u003c\/p\u003e \u003cp\u003e6.4 Summary 72\u003c\/p\u003e \u003cp\u003eReferences 73\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7 Noise Characteristics and Modeling of Lubistor 75\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e7.1 Introduction 75\u003c\/p\u003e \u003cp\u003e7.2 Experiments 75\u003c\/p\u003e \u003cp\u003e7.2.1 Device Structure 75\u003c\/p\u003e \u003cp\u003e7.2.2 Measurement System 77\u003c\/p\u003e \u003cp\u003e7.3 Results and Discussion 77\u003c\/p\u003e \u003cp\u003e7.3.1 I–V Characteristics of an SOI Lubistor and a Simple Analytical Model 77\u003c\/p\u003e \u003cp\u003e7.3.2 Noise Spectral Density of SOI Lubistors and Their Feature 81\u003c\/p\u003e \u003cp\u003e7.3.3 Advanced Analysis of Anode Noise Spectral Density 83\u003c\/p\u003e \u003cp\u003e7.4 Summary 86\u003c\/p\u003e \u003cp\u003eReferences 86\u003c\/p\u003e \u003cp\u003e\u003cb\u003e8 Supplementary Study on Buried Oxide Characterization 89\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e8.1 Introduction 89\u003c\/p\u003e \u003cp\u003e8.2 Physical Model for the Transition Layer 90\u003c\/p\u003e \u003cp\u003e8.3 Capacitance Simulation 93\u003c\/p\u003e \u003cp\u003e8.3.1 A Structure to Evaluate Capacitance 93\u003c\/p\u003e \u003cp\u003e8.3.2 Numerical Simulation Technique 94\u003c\/p\u003e \u003cp\u003e8.4 Device Fabrication 95\u003c\/p\u003e \u003cp\u003e8.5 Results and Discussion 96\u003c\/p\u003e \u003cp\u003e8.5.1 Electrode-to-Electrode Capacitance Dependence on Frequency 96\u003c\/p\u003e \u003cp\u003e8.5.2 Drain-to-Substrate Capacitance Dependence on Bias 98\u003c\/p\u003e \u003cp\u003e8.5.3 Electrode-to-Electrode Capacitance Dependence on Transition Layer Thickness 101\u003c\/p\u003e \u003cp\u003e8.6 Summary 101\u003c\/p\u003e \u003cp\u003eReferences 102\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart Three PHYSICS AND MODELING OF SOI LUBISTORS – THIN-FILM DEVICES\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e9 Negative Conductance Properties in Extremely Thin SOI Lubistors 105\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e9.1 Introduction 105\u003c\/p\u003e \u003cp\u003e9.2 Device Fabrication and Measurements 105\u003c\/p\u003e \u003cp\u003e9.3 Results and Discussion 106\u003c\/p\u003e \u003cp\u003e9.4 Summary 109\u003c\/p\u003e \u003cp\u003eReferences 109\u003c\/p\u003e \u003cp\u003e\u003cb\u003e10 Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors 111\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e10.1 Introduction 111\u003c\/p\u003e \u003cp\u003e10.2 Experiments 111\u003c\/p\u003e \u003cp\u003e10.2.1 Anode Common Configuration 113\u003c\/p\u003e \u003cp\u003e10.2.2 Cathode Common Configuration 113\u003c\/p\u003e \u003cp\u003e10.3 Physical Models and Simulations 114\u003c\/p\u003e \u003cp\u003e10.3.1 Fundamental Models 114\u003c\/p\u003e \u003cp\u003e10.3.2 Theoretical Simulations 118\u003c\/p\u003e \u003cp\u003e10.3.3 Influences on Characteristics of Extremely Ultra-Thin SOI MOSFET Devices 122\u003c\/p\u003e \u003cp\u003e10.4 Summary 122\u003c\/p\u003e \u003cp\u003eAppendix 10A: Intrinsic Carrier Concentration (niq) and the Fermi Level in 2DSS 122\u003c\/p\u003e \u003cp\u003eAppendix 10B: Calculation of Electron and Hole Densities in 2DSS 125\u003c\/p\u003e \u003cp\u003eReferences 125\u003c\/p\u003e \u003cp\u003e\u003cb\u003e11 Two-Dimensional Quantization Effect on Indirect Tunneling in SOI Lubistors with a Thin Silicon Layer 127\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e11.1 Introduction 127\u003c\/p\u003e \u003cp\u003e11.2 Experimental Results 128\u003c\/p\u003e \u003cp\u003e11.2.1 Junction Current Dependence on Anode Voltage 128\u003c\/p\u003e \u003cp\u003e11.2.2 Junction Current Dependence on Gate Voltage 132\u003c\/p\u003e \u003cp\u003e11.3 Theoretical Discussion 134\u003c\/p\u003e \u003cp\u003e11.3.1 Qualitative Consideration of the Low-Dimensional Indirect Tunneling Process 134\u003c\/p\u003e \u003cp\u003e11.3.2 Theoretical Formulations of Tunneling Current and Discussion 134\u003c\/p\u003e \u003cp\u003e11.4 Summary 140\u003c\/p\u003e \u003cp\u003eAppendix 11A: Wave Function Coupling Effect in the Lateral Two-Dimensional-System-to-Three-Dimensional-System (2D-to-3D) Tunneling Process 141\u003c\/p\u003e \u003cp\u003eReferences 141\u003c\/p\u003e \u003cp\u003e\u003cb\u003e12 Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors 143\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e12.1 Introduction 143\u003c\/p\u003e \u003cp\u003e12.2 Device Structures and Experimental Apparatus 144\u003c\/p\u003e \u003cp\u003e12.3 Results and Discussion 145\u003c\/p\u003e \u003cp\u003e12.3.1 I–V Characteristics under the Reverse-Biased Condition 145\u003c\/p\u003e \u003cp\u003e12.4 Summary 151\u003c\/p\u003e \u003cp\u003eAppendix 12A: Derivation of Equations (12.6) and (12.9) 151\u003c\/p\u003e \u003cp\u003eReferences 153\u003c\/p\u003e \u003cp\u003e\u003cb\u003e13 Supplementary Consideration of I-V Characteristics of Forward-Biased Ultra-Thin Lubistors 155\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e13.1 Introduction 155\u003c\/p\u003e \u003cp\u003e13.2 Device Structures and Bias Configuration 155\u003c\/p\u003e \u003cp\u003e13.3 Results and Discussion 156\u003c\/p\u003e \u003cp\u003e13.4 Summary 157\u003c\/p\u003e \u003cp\u003eReferences 158\u003c\/p\u003e \u003cp\u003e\u003cb\u003e14 Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET 159\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e14.1 Introduction 159\u003c\/p\u003e \u003cp\u003e14.2 Device and Experiments 159\u003c\/p\u003e \u003cp\u003e14.3 Results and Discussion 159\u003c\/p\u003e \u003cp\u003e14.3.1 ID–VG and IG–VG Characteristics of the Ultra-Thin-Body DT-MOSFET 159\u003c\/p\u003e \u003cp\u003e14.3.2 Control of Bipolar Action by the MOS Gate 162\u003c\/p\u003e \u003cp\u003e14.4 Channel Polarity Dependence of Bipolar Action 162\u003c\/p\u003e \u003cp\u003e14.4.1 ID–VG and gm–VG Characteristics of the Ultra-Thin-Body DT-MOSFET 162\u003c\/p\u003e \u003cp\u003e14.4.2 Difference of Bipolar Operation between the n-Channel DT-MOS and the p-Channel DT-MOS 163\u003c\/p\u003e \u003cp\u003e14.4.3 Impact of Body Thickness on Bipolar Operation 164\u003c\/p\u003e \u003cp\u003e14.5 Summary 166\u003c\/p\u003e \u003cp\u003eReferences 166\u003c\/p\u003e \u003cp\u003e\u003cb\u003e15 Supplementary Study on Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET 167\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e15.1 Introduction 167\u003c\/p\u003e \u003cp\u003e15.2 Device Structures and Parameters 167\u003c\/p\u003e \u003cp\u003e15.3 Results and Discussion 169\u003c\/p\u003e \u003cp\u003e15.3.1 SOI MOSFET Mode and DT-MOSFET Mode 169\u003c\/p\u003e \u003cp\u003e15.3.2 Temperature Evolution of Transconductance (gm) Characteristics and Impact of Channel Length on gm Characteristics 170\u003c\/p\u003e \u003cp\u003e15.3.3 Impact of SOI Layer Thickness on gm Characteristics 173\u003c\/p\u003e \u003cp\u003e15.4 Summary 173\u003c\/p\u003e \u003cp\u003eReferences 174\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart Four CIRCUIT APPLICATIONS\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e16 Subcircuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications 179\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e16.1 Introduction 179\u003c\/p\u003e \u003cp\u003e16.2 Equivalent Circuit Models of SOI Lubistors and their Applications 180\u003c\/p\u003e \u003cp\u003e16.2.1 Device Structure and Device Simulation 180\u003c\/p\u003e \u003cp\u003e16.2.2 Equivalent Circuit Models 183\u003c\/p\u003e \u003cp\u003e16.3 ESD Protection Circuit 183\u003c\/p\u003e \u003cp\u003e16.4 Direct Current Characteristics of the ESD Protection Devices and Their SPICE Models 186\u003c\/p\u003e \u003cp\u003e16.5 ESD Event and Performance Evaluation of an ESD Protection Circuit 189\u003c\/p\u003e \u003cp\u003e16.6 Summary 196\u003c\/p\u003e \u003cp\u003eReferences 196\u003c\/p\u003e \u003cp\u003e\u003cb\u003e17 A New Basic Element for Neural Logic Functions and Capability in Circuit Applications 199\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e17.1 Introduction 199\u003c\/p\u003e \u003cp\u003e17.2 Device Structure, Model, and Proposal of a New Logic Element 199\u003c\/p\u003e \u003cp\u003e17.2.1 Device Structure and Fundamental Characteristics 199\u003c\/p\u003e \u003cp\u003e17.2.2 Device Model for the Lubistor 201\u003c\/p\u003e \u003cp\u003e17.2.3 Proposal of a New Logic Element 203\u003c\/p\u003e \u003cp\u003e17.3 Circuit Applications and Discussion 206\u003c\/p\u003e \u003cp\u003e17.3.1 Examples of Fundamental Elements for Circuit Applications 206\u003c\/p\u003e \u003cp\u003e17.3.2 On the Further Improvement of Functions of the Basic Logic Element 211\u003c\/p\u003e \u003cp\u003e17.4 Summary 211\u003c\/p\u003e \u003cp\u003eReferences 211\u003c\/p\u003e \u003cp\u003e\u003cb\u003e18 Sub-1-V Voltage Reference Circuit Technology as an Analog Circuit Application 213\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e18.1 Review of Bandgap Reference 213\u003c\/p\u003e \u003cp\u003e18.2 Challenging Study of Sub-1-V Voltage Reference 214\u003c\/p\u003e \u003cp\u003eReferences 215\u003c\/p\u003e \u003cp\u003e\u003cb\u003e19 Possible Implementation of SOI Lubistors into Conventional Logic Circuits 217\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eReferences 218\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart Five OPTICAL DEVICE APPLICATIONS OF SOI LUBISTORS\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e20 Potentiality of Electro-Optic Modulator Based on the SOI Waveguide 223\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e20.1 Introduction 223\u003c\/p\u003e \u003cp\u003e20.2 Characterization of the Quasi-One-Dimensional Photonic Crystal Waveguide 224\u003c\/p\u003e \u003cp\u003e20.3 Electro-Optic Modulator Based on the SOI Waveguide 230\u003c\/p\u003e \u003cp\u003e20.4 Summary 233\u003c\/p\u003e \u003cp\u003eReferences 234\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart Six SOI LUBISTOR AS A TESTING TOOL\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e21 Principles of Parameter Extraction 237\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eReferences 239\u003c\/p\u003e \u003cp\u003e\u003cb\u003e22 Charge Pumping Technique 241\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e22.1 Introduction 241\u003c\/p\u003e \u003cp\u003e22.2 Experimental and Simulation Details 241\u003c\/p\u003e \u003cp\u003e22.3 Results and Discussion 243\u003c\/p\u003e \u003cp\u003e22.4 Summary 246\u003c\/p\u003e \u003cp\u003eReferences 246\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart Seven FUTURE PROSPECTS\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e23 Overview 249\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e23.1 Introduction 249\u003c\/p\u003e \u003cp\u003e23.2 i-MOS Transistor 249\u003c\/p\u003e \u003cp\u003e23.3 Tunnel FET 251\u003c\/p\u003e \u003cp\u003e23.4 Feedback FET 254\u003c\/p\u003e \u003cp\u003e23.5 Potential of Offset-Gate Lubistor 256\u003c\/p\u003e \u003cp\u003e23.6 Si Fin LED with a Multi-quantum Well 258\u003c\/p\u003e \u003cp\u003e23.7 Future of the pn Junction 258\u003c\/p\u003e \u003cp\u003eReferences 259\u003c\/p\u003e \u003cp\u003e\u003cb\u003e24 Feasibility of the Lubistor-Based Avalanche Phototransistor 261\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e24.1 Introduction 261\u003c\/p\u003e \u003cp\u003e24.2 Theoretical Formulation of the Avalanche Phenomenon in Direct-Bandgap Semiconductors 261\u003c\/p\u003e \u003cp\u003e24.3 Theoretical Formulation of the Avalanche Phenomenon in Indirect-Bandgap Semiconductors 264\u003c\/p\u003e \u003cp\u003e24.4 Theoretical Consideration of the Avalanche Phenomenon in a One-Dimensional Wire pn Junction 265\u003c\/p\u003e \u003cp\u003e24.5 Summary 269\u003c\/p\u003e \u003cp\u003eReferences 269\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart Eight SUMMARY OF PHYSICS FOR SEMICONDUCTOR DEVICES AND MATHEMATICS FOR DEVICE ANALYSES\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e25 Physics of Semiconductor Devices for Analysis 273\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e25.1 Free Carrier Concentration and the Fermi Level in Semiconductors 273\u003c\/p\u003e \u003cp\u003e25.2 Impurity Doping in Semiconductors 275\u003c\/p\u003e \u003cp\u003e25.3 Drift and Diffusion of Carriers and Current Continuity in Semiconductors 275\u003c\/p\u003e \u003cp\u003e25.4 Stationary-State Schr€odinger Equation to Analyze Quantum-Mechanical Effects in Semiconductors 276\u003c\/p\u003e \u003cp\u003e25.5 Time-dependent Schr€odinger Equation to Analyze Dynamics in Semiconductors 277\u003c\/p\u003e \u003cp\u003e25.6 Quantum Size Effects in Nano-Scale Semiconductors 278\u003c\/p\u003e \u003cp\u003e25.7 Tunneling through Energy Barriers in Semiconductors 281\u003c\/p\u003e \u003cp\u003e25.8 Low-Dimensional Tunneling in Nano-Scale Semiconductors 282\u003c\/p\u003e \u003cp\u003e25.9 Photon Absorption and Electronic Transitions 284\u003c\/p\u003e \u003cp\u003e25.9.1 Fundamental Formulations 284\u003c\/p\u003e \u003cp\u003e25.9.2 Interband Transition – Direct Bandgap 285\u003c\/p\u003e \u003cp\u003e25.9.3 Interband Transition – Indirect Bandgap 286\u003c\/p\u003e \u003cp\u003eReferences 287\u003c\/p\u003e \u003cp\u003e\u003cb\u003e26 Mathematics Applicable to the Analysis of Device Physics 289\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e26.1 Linear Differential Equation 289\u003c\/p\u003e \u003cp\u003e26.2 Operator Method 290\u003c\/p\u003e \u003cp\u003e26.3 Klein–Gordon-Type Differential Equation 291\u003c\/p\u003e \u003cp\u003eReferences 292\u003c\/p\u003e \u003cp\u003eBibliography 293\u003c\/p\u003e \u003cp\u003eIndex 295\u003c\/p\u003e","brand":"John Wiley \u0026 Sons Inc","offers":[{"title":"Default Title","offer_id":49528831017303,"sku":"9781118487907","price":114.9,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0817\/1739\/5799\/files\/9781118487907.jpg?v=1731873192","url":"https:\/\/bookcurl.com\/products\/soi-lubistors-9781118487907","provider":"Book Curl","version":"1.0","type":"link"}