{"product_id":"semiconductor-devices-9780470537947","title":"Semiconductor Devices","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003e* Covers all key semiconductor devices with up-to-date information and easy-to-understand descriptions. Each chapter is presented in a logical manner enabling students to learn all important devices from a single source.    * Covers historical developments of devices and technology in the last 100 years.\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003e\u003cp\u003ePreface vii\u003c\/p\u003e \u003cp\u003eAcknowledgments ix\u003c\/p\u003e \u003cp\u003eChapter 0 Introduction 1\u003c\/p\u003e \u003cp\u003e0.1 Semiconductor Devices 1\u003c\/p\u003e \u003cp\u003e0.2 Semiconductor Technology 6\u003c\/p\u003e \u003cp\u003eSummary 12\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART I SEMICONDUCTOR PHYSICS\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium 15\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e1.1 Semiconductor Materials 15\u003c\/p\u003e \u003cp\u003e1.2 Basic Crystal Structures 17\u003c\/p\u003e \u003cp\u003e1.3 Valence Bonds 22\u003c\/p\u003e \u003cp\u003e1.4 Energy Bands 23\u003c\/p\u003e \u003cp\u003e1.5 Intrinsic Carrier Concentration 29\u003c\/p\u003e \u003cp\u003e1.6 Donors and Acceptors 34\u003c\/p\u003e \u003cp\u003eSummary 40\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 2 Carrier Transport Phenomena 43\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e2.1 Carrier Drift 43\u003c\/p\u003e \u003cp\u003e2.2 Carrier Diffusion 53\u003c\/p\u003e \u003cp\u003e2.3 Generation and Recombination Processes 56\u003c\/p\u003e \u003cp\u003e2.4 Continuity Equation 62\u003c\/p\u003e \u003cp\u003e2.5 Thermionic Emission Process 68\u003c\/p\u003e \u003cp\u003e2.6 Tunneling Process 69\u003c\/p\u003e \u003cp\u003e2.7 Space-Charge Effect 71\u003c\/p\u003e \u003cp\u003e2.8 High-Field Effects 73\u003c\/p\u003e \u003cp\u003eSummary 77\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART II SEMICONDUCTOR DEVICES\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 3 \u003ci\u003ep-n\u003c\/i\u003e Junction 82\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e3.1 Thermal Equilibrium Condition 83\u003c\/p\u003e \u003cp\u003e3.2 Depletion Region 87\u003c\/p\u003e \u003cp\u003e3.3 Depletion Capacitance 95\u003c\/p\u003e \u003cp\u003e3.4 Current-Voltage Characteristics 99\u003c\/p\u003e \u003cp\u003e3.5 Charge Storage and Transient Behavior 108\u003c\/p\u003e \u003cp\u003e3.6 Junction Breakdown 111\u003c\/p\u003e \u003cp\u003e3.7 Heterojunction 117\u003c\/p\u003e \u003cp\u003eSummary 120\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 4 Bipolar Transistors and Related Devices 123\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e4.1 Transistor Action 124\u003c\/p\u003e \u003cp\u003e4.2 Static Characteristics of Bipolar Transistors 129\u003c\/p\u003e \u003cp\u003e4.3 Frequency Response and Switching of Bipolar Transistors 137\u003c\/p\u003e \u003cp\u003e4.4 Nonideal Effects 142\u003c\/p\u003e \u003cp\u003e4.5 Heterojunction Bipolar Transistors 146\u003c\/p\u003e \u003cp\u003e4.6 Thyristors and Related Power Devices 149\u003c\/p\u003e \u003cp\u003eSummary 155\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 5 MOS Capacitor and MOSFET 160\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e5.1 Ideal MOS Capacitor 160\u003c\/p\u003e \u003cp\u003e5.2 SiO\u003csub\u003e2\u003c\/sub\u003e-Si MOS Capacitor 169\u003c\/p\u003e \u003cp\u003e5.3 Carrier Transport in MOS Capacitors 174\u003c\/p\u003e \u003cp\u003e5.4 Charge-Coupled Devices 177\u003c\/p\u003e \u003cp\u003e5.5 MOSFET Fundamentals 180\u003c\/p\u003e \u003cp\u003eSummary 192\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 6 Advanced MOSFET and Related Devices 195\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e6.1 MOSFET Scaling 195\u003c\/p\u003e \u003cp\u003e6.2 CMOS and BiCMOS 205\u003c\/p\u003e \u003cp\u003e6.3 MOSFET on Insulator 210\u003c\/p\u003e \u003cp\u003e6.4 MOS Memory Structures 214\u003c\/p\u003e \u003cp\u003e6.5 Power MOSFET 223\u003c\/p\u003e \u003cp\u003eSummary 224\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 7 MESFET and Related Devices 228\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e7.1 Metal-Semiconductor Contacts 229\u003c\/p\u003e \u003cp\u003e7.2 MESFET 240\u003c\/p\u003e \u003cp\u003e7.3 MODFET 249\u003c\/p\u003e \u003cp\u003eSummary 255\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices 258\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e8.1 Microwave Frequency Bands 259\u003c\/p\u003e \u003cp\u003e8.2 Tunnel Diode 260\u003c\/p\u003e \u003cp\u003e8.3 IMPATT Diode 260\u003c\/p\u003e \u003cp\u003e8.4 Transferred-Electron Devices 265\u003c\/p\u003e \u003cp\u003e8.5 Quantum-Effect Devices 269\u003c\/p\u003e \u003cp\u003e8.6 Hot-Electron Devices 274\u003c\/p\u003e \u003cp\u003eSummary 277\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 9 Light Emitting Diodes and Lasers 280\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e9.1 Radiative Transitions and Optical Absorption 280\u003c\/p\u003e \u003cp\u003e9.2 Light-Emitting Diodes 286\u003c\/p\u003e \u003cp\u003e9.3 Various Light-Emitting Diodes 291\u003c\/p\u003e \u003cp\u003e9.4 Semiconductor Lasers 302\u003c\/p\u003e \u003cp\u003eSummary 319\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 10 Photodetectors and Solar Cells 323\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e10.1 Photodetectors 323\u003c\/p\u003e \u003cp\u003e10.2 Solar Cells 336\u003c\/p\u003e \u003cp\u003e10.3 Silicon and Compound-Semiconductor Solar Cells 343\u003c\/p\u003e \u003cp\u003e10.4 Third-Generation Solar Cells 348\u003c\/p\u003e \u003cp\u003e10.5 Optical Concentration 352\u003c\/p\u003e \u003cp\u003eSummary 352\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART III SEMICONDUCTOR TECHNOLOGY\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 11 Crystal Growth and Epitaxy 357\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e11.1 Silicon Crystal Growth from the Melt 357\u003c\/p\u003e \u003cp\u003e11.2 Silicon Float-Zone Proces 363\u003c\/p\u003e \u003cp\u003e11.3 GaAs Grystal-Growth Techniques 367\u003c\/p\u003e \u003cp\u003e11.4 Material Characterization 370\u003c\/p\u003e \u003cp\u003e11.5 Epitaxial-Growth Techniques 377\u003c\/p\u003e \u003cp\u003e11.6 Structures and Defects in Epitaxial Layers 384\u003c\/p\u003e \u003cp\u003eSummary 388\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 12 Film Formation 392\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e12.1 Thermal Oxidation 392\u003c\/p\u003e \u003cp\u003e12.2 Chemical Vapor Deposition of Dielectrics 400\u003c\/p\u003e \u003cp\u003e12.3 Chemical Vapor Deposition of Polysilicon 409\u003c\/p\u003e \u003cp\u003e12.4 Atom Layer Deposition 412\u003c\/p\u003e \u003cp\u003e12.5 Metallization 414\u003c\/p\u003e \u003cp\u003eSummary 425\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 13 Lithography and Etching 428\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e13.1 Optical Lithography 428\u003c\/p\u003e \u003cp\u003e13.2 Next-Generation Lithographic Methods 441\u003c\/p\u003e \u003cp\u003e13.3 Wet Chemical Etching 447\u003c\/p\u003e \u003cp\u003e13.4 Dry Etching 450\u003c\/p\u003e \u003cp\u003eSummary 462\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 14 Impurity Doping 466\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e14.1 Basic Diffusion Process 467\u003c\/p\u003e \u003cp\u003e14.2 Extrinsic Diffusion 476\u003c\/p\u003e \u003cp\u003e14.3 Diffusion-Related Processes 480\u003c\/p\u003e \u003cp\u003e14.4 Range of Implanted Ions 483\u003c\/p\u003e \u003cp\u003e14.5 Implant Damage and Annealing 490\u003c\/p\u003e \u003cp\u003e14.6 Implantation-Related Processes 495\u003c\/p\u003e \u003cp\u003eSummary 501\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 15 Integrated Devices 505\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e15.1 Passive Components 507\u003c\/p\u003e \u003cp\u003e15.2 Bipolar Technology 511\u003c\/p\u003e \u003cp\u003e15.3 MOSFET Technology 516\u003c\/p\u003e \u003cp\u003e15.4 MESFET Technology 529\u003c\/p\u003e \u003cp\u003e15.5 Challenges for Nanoelectronics 532\u003c\/p\u003e \u003cp\u003eSummary 537\u003c\/p\u003e \u003cp\u003eAPPENDIX A List of Symbols 541\u003c\/p\u003e \u003cp\u003eAPPENDIX B International Systems of Units (SI Units) 543\u003c\/p\u003e \u003cp\u003eAPPENDIX C Unit Prefixes 544\u003c\/p\u003e \u003cp\u003eAPPENDIX D Greek Alphabet 545\u003c\/p\u003e \u003cp\u003eAPPENDIX E Physical Constants 546\u003c\/p\u003e \u003cp\u003eAPPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K 547\u003c\/p\u003e \u003cp\u003eAPPENDIX G Properties of Si and GaAs at 300 K 548\u003c\/p\u003e \u003cp\u003eAPPENDIX H Derivation of the Density of States in a Semiconductor 549\u003c\/p\u003e \u003cp\u003eAPPENDIX I Derivation of Recombination Rate for Indirect Recombination 553\u003c\/p\u003e \u003cp\u003eAPPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode 555\u003c\/p\u003e \u003cp\u003eAPPENDIX K Basic Kinetic Theory of Gases 557\u003c\/p\u003e \u003cp\u003eAPPENDIX L Answers to Selected Problems 559\u003c\/p\u003e \u003cp\u003ePhoto Credits 563\u003c\/p\u003e \u003cp\u003eIndex 565\u003c\/p\u003e","brand":"John Wiley \u0026 Sons Inc","offers":[{"title":"Default Title","offer_id":49402359710039,"sku":"9780470537947","price":219.26,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0817\/1739\/5799\/files\/9780470537947.jpg?v=1730480167","url":"https:\/\/bookcurl.com\/products\/semiconductor-devices-9780470537947","provider":"Book Curl","version":"1.0","type":"link"}