{"product_id":"semiconductor-device-and-failure-analysis-9780471492405","title":"Semiconductor Device and Failure Analysis","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003eFault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microscopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTrade Review\u003c\/b\u003e\u003cbr\u003e\"This reference details the principles of design, calibration, and use of photon emission microscopy (PEM) as a fault localization technique used for analyzing device reliability and failure.\" (SciTech Book News Vol. 25, No. 2 June 2001)\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003ePreface.\u003cbr\u003e \u003cbr\u003e Introduction.\u003cbr\u003e \u003cbr\u003e Theory of Light Emission in Semiconductors.\u003cbr\u003e \u003cbr\u003e Instrumentation Aspects of the Photon Emission Microscope.\u003cbr\u003e \u003cbr\u003e Backside Photon Emission Microscopy.\u003cbr\u003e \u003cbr\u003e Spectroscopic Photon Emission Microscopy.\u003cbr\u003e \u003cbr\u003e Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under Hot-Carrier Stressing.\u003cbr\u003e \u003cbr\u003e Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under High-Field Impulse Stressing.\u003cbr\u003e \u003cbr\u003e Oxide Degradation and Photon Emission from Metal-Oxide Semiconductor Capacitor Structures.\u003cbr\u003e \u003cbr\u003e Index.","brand":"John Wiley \u0026 Sons Inc","offers":[{"title":"Default Title","offer_id":49402613924183,"sku":"9780471492405","price":174.56,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0817\/1739\/5799\/files\/9780471492405.jpg?v=1730480972","url":"https:\/\/bookcurl.com\/products\/semiconductor-device-and-failure-analysis-9780471492405","provider":"Book Curl","version":"1.0","type":"link"}