{"product_id":"reliability-wearout-mechanisms-in-advanced-cmos-technologies-ieee-press-series-on-microelectronic-systems-12-9780471731726","title":"Reliability Wearout Mechanisms in Advanced CMOS Technologies IEEE Press Series on Microelectronic Systems 12","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003eThis invaluable resource tells the complete story of failure mechanisms  from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience.\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003ePreface.  \u003cp\u003e\u003cb\u003e1\u003c\/b\u003e \u003cb\u003eINTRODUCTION\u003c\/b\u003e (\u003ci\u003eAlvin W. Strong\u003c\/i\u003e).\u003c\/p\u003e \u003cp\u003e1.1 Book Philosophy.\u003c\/p\u003e \u003cp\u003e1.2 Lifetime and Acceleration Concepts.\u003c\/p\u003e \u003cp\u003e1.3 Mechanism Types.\u003c\/p\u003e \u003cp\u003e1.4 Reliability Statistics.\u003c\/p\u003e \u003cp\u003e1.5 Chi-Square and Student t Distributions.\u003c\/p\u003e \u003cp\u003e1.6 Application.\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2\u003c\/b\u003e \u003cb\u003eDIELECTRIC CHARACTERIZATION AND RELIABILITY METHODOLOGY\u003c\/b\u003e (\u003ci\u003eErnest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune\u003c\/i\u003e).\u003c\/p\u003e \u003cp\u003e2.1 Introduction.\u003c\/p\u003e \u003cp\u003e2.2 Fundamentals of Insulator Physics and Characterization.\u003c\/p\u003e \u003cp\u003e2.3 Measurement of Dielectric Reliability.\u003c\/p\u003e \u003cp\u003e2.4 Fundamentals of Dielectric Breakdown Statistics.\u003c\/p\u003e \u003cp\u003e2.5 Summary and Future Trends.\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3\u003c\/b\u003e \u003cb\u003eDIELECTRIC BREAKDOWN OF GATE OXIDES: PHYSICS AND EXPERIMENTS\u003c\/b\u003e (\u003ci\u003eErnest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune\u003c\/i\u003e).\u003c\/p\u003e \u003cp\u003e3.1 Introduction.\u003c\/p\u003e \u003cp\u003e3.2 Physics of Degradation and Breakdown.\u003c\/p\u003e \u003cp\u003e3.3 Physical Models for Oxide Degradation and Breakdown.\u003c\/p\u003e \u003cp\u003e3.4 Experimental Results of Oxide Breakdown.\u003c\/p\u003e \u003cp\u003e3.5 Post-Breakdown Phenomena.\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4\u003c\/b\u003e \u003cb\u003eNEGATIVE BIAS TEMPERATURE INSTABILITIES IN pMOSFET DEVICES\u003c\/b\u003e (\u003ci\u003eGiuseppe LaRosa\u003c\/i\u003e).\u003cbr\u003e \u003c\/p\u003e \u003cp\u003e4.1 Introduction.\u003c\/p\u003e \u003cp\u003e4.2 Considerations on NBTI Stress Configurations.\u003c\/p\u003e \u003cp\u003e4.3 Appropriate NBTI Stress Bias Dependence.\u003c\/p\u003e \u003cp\u003e4.4 Nature of the NBTI Damage.\u003c\/p\u003e \u003cp\u003e4.5 Impact of the NBTI Damage to Key pMOSFET Transistor Parameters.\u003c\/p\u003e \u003cp\u003e4.6 Physical Mechanisms Contributing to the NBTI Damage.\u003c\/p\u003e \u003cp\u003e4.7 Key Experimental Observations on the NBTI Damage.\u003c\/p\u003e \u003cp\u003e4.8 Nit Generation by Reaction–Diffusion (R–D) Processes.\u003c\/p\u003e \u003cp\u003e4.9 Hole Trapping Modeling.\u003c\/p\u003e \u003cp\u003e4.10 NBTI Dependence on CMOS Processes.\u003c\/p\u003e \u003cp\u003e4.11 NBTI Dependence on Area Scaling.\u003c\/p\u003e \u003cp\u003e4.12 Overview of Key NBTI Features.\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5\u003c\/b\u003e \u003cb\u003eHOT CARRIERS\u003c\/b\u003e (\u003ci\u003eStewart E. Rauch, III\u003c\/i\u003e).\u003c\/p\u003e \u003cp\u003e5.1 Introduction.\u003c\/p\u003e \u003cp\u003e5.2 Hot Carriers: Physical Generation and Injection Mechanisms.\u003c\/p\u003e \u003cp\u003e5.3 Hot Carrier Damage Mechanisms.\u003c\/p\u003e \u003cp\u003e5.4 HC Impact to MOSFET Characteristics.\u003cbr\u003e \u003c\/p\u003e \u003cp\u003e5.5 Hot Carrier Shift Models.\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6\u003c\/b\u003e \u003cb\u003eSTRESS-INDUCED VOIDING\u003c\/b\u003e (\u003ci\u003eTimothy D. Sullivan\u003c\/i\u003e).\u003c\/p\u003e \u003cp\u003e6.1 Introduction.\u003c\/p\u003e \u003cp\u003e6.2 Theory and Model.\u003c\/p\u003e \u003cp\u003e6.3 Role of the Overlying Dielectric.\u003c\/p\u003e \u003cp\u003e6.4 Summary of Voiding in Al Metallizations\u003c\/p\u003e \u003cp\u003e6.5 Stress Voiding in Cu Interconnects.\u003c\/p\u003e \u003cp\u003e6.6 Concluding Remarks.\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7\u003c\/b\u003e \u003cb\u003eELECTROMIGRATION\u003c\/b\u003e (\u003ci\u003eTimothy D. Sullivan\u003c\/i\u003e).\u003cbr\u003e \u003c\/p\u003e \u003cp\u003e7.1 Introduction.\u003c\/p\u003e \u003cp\u003e7.2 Metallization Failure.\u003c\/p\u003e \u003cp\u003e7.3 Electromigration.\u003c\/p\u003e \u003cp\u003e7.4 General Approach to Electromigration Reliability.\u003c\/p\u003e \u003cp\u003e7.5 Thermal Considerations for Electromigration.\u003c\/p\u003e \u003cp\u003e7.6 Closing Remarks.\u003c\/p\u003e \u003cp\u003eIndex.\u003c\/p\u003e","brand":"Wiley","offers":[{"title":"Default Title","offer_id":53515432100183,"sku":"9780471731726","price":147.56,"currency_code":"GBP","in_stock":true}],"url":"https:\/\/bookcurl.com\/products\/reliability-wearout-mechanisms-in-advanced-cmos-technologies-ieee-press-series-on-microelectronic-systems-12-9780471731726","provider":"Book Curl","version":"1.0","type":"link"}