{"product_id":"nitride-semiconductor-technology-power-electronics-and-optoelectronic-devices-9783527347100","title":"Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003eThe book \"Nitride Semiconductor Technology\" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices.\u003cbr\u003e \u003cbr\u003e In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.\u003cbr\u003e \u003cbr\u003e\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003e\u003cp\u003ePreface xi\u003c\/p\u003e \u003cp\u003eAcknowledgments xv\u003c\/p\u003e \u003cp\u003e\u003cb\u003e1 Introduction to Gallium Nitride Properties and Applications \u003c\/b\u003e\u003cb\u003e1\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eFabrizio Roccaforte and Mike Leszczynski\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e1.1 Historical Background 1\u003c\/p\u003e \u003cp\u003e1.2 Basic Properties of Nitrides 4\u003c\/p\u003e \u003cp\u003e1.2.1 Microstructure and Related Issues 7\u003c\/p\u003e \u003cp\u003e1.2.2 Optical Properties 13\u003c\/p\u003e \u003cp\u003e1.2.3 Electrical Properties 16\u003c\/p\u003e \u003cp\u003e1.2.4 Two-Dimensional Electron Gas (2DEG) in AlGaN\/GaN Heterostructures 19\u003c\/p\u003e \u003cp\u003e1.3 Applications of GaN-Based Materials 23\u003c\/p\u003e \u003cp\u003e1.3.1 Optoelectronic Devices 24\u003c\/p\u003e \u003cp\u003e1.3.2 Power- and High-Frequency Electronic Devices 26\u003c\/p\u003e \u003cp\u003e1.4 Summary 30\u003c\/p\u003e \u003cp\u003eAcknowledgments 31\u003c\/p\u003e \u003cp\u003eReferences 31\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2 GaN-Based Materials: Substrates, Metalorganic Vapor-Phase Epitaxy, and Quantum Well Properties \u003c\/b\u003e\u003cb\u003e41\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eFerdinand Scholz, Michal Bockowski, and Ewa Grzanka\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e2.1 Introduction 41\u003c\/p\u003e \u003cp\u003e2.2 Bulk GaN Growth 42\u003c\/p\u003e \u003cp\u003e2.2.1 Hydride Vapor-Phase Epitaxy (HVPE) 43\u003c\/p\u003e \u003cp\u003e2.2.2 Sodium Flux Growth Method 45\u003c\/p\u003e \u003cp\u003e2.2.3 Ammonothermal Growth 46\u003c\/p\u003e \u003cp\u003e2.3 MOVPE Growth 51\u003c\/p\u003e \u003cp\u003e2.3.1 Basics About Nitride MOVPE 54\u003c\/p\u003e \u003cp\u003e2.3.2 Epitaxy on Foreign Substrates 58\u003c\/p\u003e \u003cp\u003e2.3.2.1 Sapphire as a Foreign Substrate 58\u003c\/p\u003e \u003cp\u003e2.3.2.2 GaN on SiC and Si 60\u003c\/p\u003e \u003cp\u003e2.3.3 Defect Reduction by ELOG, FACELO, etc. 62\u003c\/p\u003e \u003cp\u003e2.3.4 In Situ ELOG by SiN Deposition 64\u003c\/p\u003e \u003cp\u003e2.3.5 Doping of Nitrides 64\u003c\/p\u003e \u003cp\u003e2.3.6 Growth of Other Binary and Ternary Nitrides 67\u003c\/p\u003e \u003cp\u003e2.4 InGaN QWs: Growth and Decomposition 72\u003c\/p\u003e \u003cp\u003e2.4.1 Growth of InGaN QWs on Polar, Nonpolar, and Semipolar GaN Substrates 72\u003c\/p\u003e \u003cp\u003e2.4.2 Origins of In Fluctuations 75\u003c\/p\u003e \u003cp\u003e2.4.3 Homogenization of InGaN QWs 78\u003c\/p\u003e \u003cp\u003e2.4.4 Decomposition of the QWs 79\u003c\/p\u003e \u003cp\u003e2.5 Summary 82\u003c\/p\u003e \u003cp\u003eAcknowledgments 82\u003c\/p\u003e \u003cp\u003eReferences 83\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3 GaN-Based HEMTs for Millimeter-wave Applications \u003c\/b\u003e\u003cb\u003e99\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eKathia Harrouche and Farid Medjdoub\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e3.1 Introduction 99\u003c\/p\u003e \u003cp\u003e3.2 Targeted Applications for GaN Millimeter-wave Devices 99\u003c\/p\u003e \u003cp\u003e3.2.1 High-Power Amplification 100\u003c\/p\u003e \u003cp\u003e3.2.2 Broadband Amplifiers 102\u003c\/p\u003e \u003cp\u003e3.2.3 5G 103\u003c\/p\u003e \u003cp\u003e3.2.3.1 GaN for 5G 104\u003c\/p\u003e \u003cp\u003e3.2.3.2 GaN Base Station PAs 106\u003c\/p\u003e \u003cp\u003e3.2.3.3 Moving Forward to 6G 108\u003c\/p\u003e \u003cp\u003e3.3 GaN-based Material Designs for Millimeter-wave Applications 108\u003c\/p\u003e \u003cp\u003e3.3.1 Intrinsic Characteristics and Comparison with Other Materials for RF Devices 108\u003c\/p\u003e \u003cp\u003e3.3.2 Specific Material Systems for RF Devices 114\u003c\/p\u003e \u003cp\u003e3.4 Device Design and Fabrication of Millimeter-wave GaN Devices 116\u003c\/p\u003e \u003cp\u003e3.4.1 Description of Key Processing Steps for Various GaN Device Designs 116\u003c\/p\u003e \u003cp\u003e3.4.1.1 Device Scaling for Millimeter Wave 116\u003c\/p\u003e \u003cp\u003e3.4.1.2 T-shaped Gate Design 116\u003c\/p\u003e \u003cp\u003e3.4.1.3 Advanced Ohmic Contact Technology 117\u003c\/p\u003e \u003cp\u003e3.4.1.4 N-polar GaN HEMTs 118\u003c\/p\u003e \u003cp\u003e3.4.1.5 AlN-Based Device Performances 119\u003c\/p\u003e \u003cp\u003e3.4.1.6 InAlGaN-Based Device Performances 121\u003c\/p\u003e \u003cp\u003e3.4.2 State-of-the-art Millimeter-wave GaN Transistors 122\u003c\/p\u003e \u003cp\u003e3.5 Overview of MMIC Power Amplifiers 123\u003c\/p\u003e \u003cp\u003e3.5.1 MMIC Technology Using III-N Devices 123\u003c\/p\u003e \u003cp\u003e3.5.1.1 III–V Material-Based MMIC Technology 123\u003c\/p\u003e \u003cp\u003e3.5.1.2 Power Amplifiers 124\u003c\/p\u003e \u003cp\u003e3.5.1.3 Low-Noise Amplifier 125\u003c\/p\u003e \u003cp\u003e3.5.2 MMIC Examples from Ka-band to D-band Frequencies 125\u003c\/p\u003e \u003cp\u003e3.6 Summary 126\u003c\/p\u003e \u003cp\u003eReferences 127\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4 Technologies for Normally-off GaN HEMTs \u003c\/b\u003e\u003cb\u003e137\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eGiuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, and Fabrizio Roccaforte\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e4.1 Introduction 137\u003c\/p\u003e \u003cp\u003e4.1.1 Threshold Voltage in AlGaN\/GaN HEMTs 138\u003c\/p\u003e \u003cp\u003e4.2 GaN HEMT “Cascode” 140\u003c\/p\u003e \u003cp\u003e4.3 “True” Normally-off HEMT Technologies 142\u003c\/p\u003e \u003cp\u003e4.3.1 Recessed-gate HEMT 142\u003c\/p\u003e \u003cp\u003e4.3.2 Fluorinated HEMT 145\u003c\/p\u003e \u003cp\u003e4.3.3 Recessed-gate Hybrid MISHEMT 149\u003c\/p\u003e \u003cp\u003e4.3.4 p-GaN Gate HEMT 155\u003c\/p\u003e \u003cp\u003e4.4 Other Approaches 163\u003c\/p\u003e \u003cp\u003e4.5 Summary 164\u003c\/p\u003e \u003cp\u003eAcknowledgments 165\u003c\/p\u003e \u003cp\u003eReferences 165\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5 Vertical GaN Power Devices \u003c\/b\u003e\u003cb\u003e177\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eSrabanti Chowdhury and Dong Ji\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e5.1 Introduction 177\u003c\/p\u003e \u003cp\u003e5.2 Vertical GaN Devices for Power Conversion 177\u003c\/p\u003e \u003cp\u003e5.3 Vertical GaN Transistors 178\u003c\/p\u003e \u003cp\u003e5.3.1 Current Aperture Vertical Electron Transistor (CAVET) 178\u003c\/p\u003e \u003cp\u003e5.3.2 Vertical MOSFETs 182\u003c\/p\u003e \u003cp\u003e5.4 High-Voltage Diodes in GaN 185\u003c\/p\u003e \u003cp\u003e5.5 Avalanche Electroluminescence in GaN P–N Diodes 186\u003c\/p\u003e \u003cp\u003e5.6 Impact Ionization Coefficients in GaN 188\u003c\/p\u003e \u003cp\u003e5.6.1 Impact of Impact Ionization Studies on Predictive Modeling 193\u003c\/p\u003e \u003cp\u003e5.7 Summary 193\u003c\/p\u003e \u003cp\u003eAcknowledgments 193\u003c\/p\u003e \u003cp\u003eReferences 194\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6 Reliability Issues in GaN Electronic Devices \u003c\/b\u003e\u003cb\u003e199\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eMilan Ťapajna and Christian Koller\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e6.1 Introduction 199\u003c\/p\u003e \u003cp\u003e6.1.1 Reliability Testing and Failure Analysis of GaN HEMTs 200\u003c\/p\u003e \u003cp\u003e6.2 Reliability of GaN HEMTs for RF Applications 204\u003c\/p\u003e \u003cp\u003e6.2.1 AlGaN\/GaN HEMTs 204\u003c\/p\u003e \u003cp\u003e6.2.1.1 Trapping Effects 204\u003c\/p\u003e \u003cp\u003e6.2.1.2 Gate-edge Degradation 207\u003c\/p\u003e \u003cp\u003e6.2.1.3 Hot Electron Degradation 209\u003c\/p\u003e \u003cp\u003e6.2.2 InAlN\/GaN HEMTs 211\u003c\/p\u003e \u003cp\u003e6.2.2.1 Hot Electron Degradation 212\u003c\/p\u003e \u003cp\u003e6.2.2.2 Role of Hot Phonons 214\u003c\/p\u003e \u003cp\u003e6.2.3 Thermal Issues in RF GaN HEMTs 215\u003c\/p\u003e \u003cp\u003e6.3 Reliability and Robustness of GaN Power Switching Devices 219\u003c\/p\u003e \u003cp\u003e6.3.1 Parasitic Effects in the Carbon-Doped GaN Buffer 221\u003c\/p\u003e \u003cp\u003e6.3.1.1 Insulation of GaN Buffer by Carbon Doping 221\u003c\/p\u003e \u003cp\u003e6.3.1.2 Time-Dependent “Dielectric” Breakdown (TDDB) of the GaN Buffer 223\u003c\/p\u003e \u003cp\u003e6.3.1.3 Dynamic \u003ci\u003eR\u003c\/i\u003e\u003csub\u003eDS,ON\u003c\/sub\u003e Due to Buffer Trapping 225\u003c\/p\u003e \u003cp\u003e6.3.2 Gate Degradation in p-GaN Switching HEMTs 230\u003c\/p\u003e \u003cp\u003e6.3.3 \u003ci\u003eV\u003c\/i\u003e\u003csub\u003eth\u003c\/sub\u003e Instabilities in GaN MISHEMTs 233\u003c\/p\u003e \u003cp\u003e6.3.3.1 Studies of PBTI in MISHEMTs 237\u003c\/p\u003e \u003cp\u003e6.4 Summary 241\u003c\/p\u003e \u003cp\u003eAcknowledgments 241\u003c\/p\u003e \u003cp\u003eReferences 241\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7 Light-Emitting Diodes \u003c\/b\u003e\u003cb\u003e253\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eAmit Yadav, Hideki Hirayama, and Edik U. Rafailov\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e7.1 Introduction 253\u003c\/p\u003e \u003cp\u003e7.2 State-of-the-Art GaN LEDs 254\u003c\/p\u003e \u003cp\u003e7.2.1 Blue LEDs 258\u003c\/p\u003e \u003cp\u003e7.2.2 Green LEDs 262\u003c\/p\u003e \u003cp\u003e7.3 GaN White LEDs: Approaches and Properties 264\u003c\/p\u003e \u003cp\u003e7.3.1 Monolithic LEDs 267\u003c\/p\u003e \u003cp\u003e7.3.2 Phosphor-Covered LEDs 271\u003c\/p\u003e \u003cp\u003e7.4 AlGaN Deep UV LEDs 275\u003c\/p\u003e \u003cp\u003e7.4.1 Growth of High-Quality AlN and Increasing in Internal Quantum Efficiency (IQE) 278\u003c\/p\u003e \u003cp\u003e7.4.2 AlGaN-based UVC LEDs 281\u003c\/p\u003e \u003cp\u003e7.4.3 Increasing the Light Extraction Efficiency (LEE) 282\u003c\/p\u003e \u003cp\u003e7.5 Summary 287\u003c\/p\u003e \u003cp\u003eAcknowledgments 288\u003c\/p\u003e \u003cp\u003eReferences 288\u003c\/p\u003e \u003cp\u003e\u003cb\u003e8 Laser Diodes Grown by Molecular Beam Epitaxy \u003c\/b\u003e\u003cb\u003e301\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eGreg Muziol, Henryk Turski, Marcin Siekacz, Marta Sawicka, and Czeslaw Skierbiszewski\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e8.1 Introduction 301\u003c\/p\u003e \u003cp\u003e8.2 III-N Growth Fundamentals by Plasma-Assisted MBE 303\u003c\/p\u003e \u003cp\u003e8.2.1 Role of N-Flux for Efficient InGaN QWs 304\u003c\/p\u003e \u003cp\u003e8.3 Wide InGaN QWs – Beyond Quantum-Confined Stark Effect 305\u003c\/p\u003e \u003cp\u003e8.4 Long-Living Laser Diodes on Bulk Ammono-GaN 313\u003c\/p\u003e \u003cp\u003e8.5 Laser Diodes with Tunnel Junctions 316\u003c\/p\u003e \u003cp\u003e8.5.1 Stacks of Vertically Interconnected Laser Diodes 319\u003c\/p\u003e \u003cp\u003e8.5.2 Distributed Feedback Laser Diodes 321\u003c\/p\u003e \u003cp\u003e8.6 Summary 324\u003c\/p\u003e \u003cp\u003eAcknowledgments 324\u003c\/p\u003e \u003cp\u003eReferences 325\u003c\/p\u003e \u003cp\u003e\u003cb\u003e9 Edge Emitting Laser Diodes and Superluminescent Diodes \u003c\/b\u003e\u003cb\u003e333\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eSzymon Stanczyk, Anna Kafar, Dario Schiavon, Stephen Najda, Thomas Slight, and Piotr Perlin\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e9.1 Laser Diode: History and Development 333\u003c\/p\u003e \u003cp\u003e9.1.1 Optoelectronics Background 333\u003c\/p\u003e \u003cp\u003e9.1.2 Gallium Nitride Technology Breakthroughs 335\u003c\/p\u003e \u003cp\u003e9.1.3 Development of Nitride Laser Diodes 337\u003c\/p\u003e \u003cp\u003e9.2 Distributed Feedback Laser Diodes 342\u003c\/p\u003e \u003cp\u003e9.3 Superluminescent Diodes 348\u003c\/p\u003e \u003cp\u003e9.3.1 History of Superluminescent Diode Development 348\u003c\/p\u003e \u003cp\u003e9.3.2 Basic SLD Properties 351\u003c\/p\u003e \u003cp\u003e9.3.3 Challenges for SLD Optimization 353\u003c\/p\u003e \u003cp\u003e9.4 Semiconductor Optical Amplifiers 354\u003c\/p\u003e \u003cp\u003e9.5 Summary 357\u003c\/p\u003e \u003cp\u003eReferences 358\u003c\/p\u003e \u003cp\u003e\u003cb\u003e10 Green and Blue Vertical-Cavity Surface-Emitting Lasers \u003c\/b\u003e\u003cb\u003e367\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYang Mei, Rong-Bin Xu, Huan Xu, and Bao-Ping Zhang\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e10.1 Introduction 367\u003c\/p\u003e \u003cp\u003e10.1.1 Properties and Application of GaN VCSELs 367\u003c\/p\u003e \u003cp\u003e10.1.2 Brief History and Current Status of GaN VCSELs 368\u003c\/p\u003e \u003cp\u003e10.1.3 GaN VCSELs with Different DBRs 369\u003c\/p\u003e \u003cp\u003e10.1.3.1 GaN VCSELs with Hybrid DBR Structure 370\u003c\/p\u003e \u003cp\u003e10.1.3.2 GaN VCSELs with Double Dielectric DBR Structure 371\u003c\/p\u003e \u003cp\u003e10.2 Efficiency of Heat Dissipation of Different Device Structures 372\u003c\/p\u003e \u003cp\u003e10.2.1 Simulation of Heat Profile of the Device 372\u003c\/p\u003e \u003cp\u003e10.2.2 Dependence of \u003ci\u003eR\u003c\/i\u003e\u003csub\u003eth\u003c\/sub\u003e on Cavity Length 373\u003c\/p\u003e \u003cp\u003e10.3 Green VCSELs Based on InGaN QDs 375\u003c\/p\u003e \u003cp\u003e10.3.1 Advantages of QDs Compared with QWs 375\u003c\/p\u003e \u003cp\u003e10.3.2 Growth and Optical Properties of InGaN QDs 377\u003c\/p\u003e \u003cp\u003e10.3.3 Fabrication Process of VCSELs 379\u003c\/p\u003e \u003cp\u003e10.3.4 Properties of QD Green VCSELs 379\u003c\/p\u003e \u003cp\u003e10.4 Green VCSELs Based on Cavity-Enhanced Emission of Localized States in Blue Emitting InGaN QWs 380\u003c\/p\u003e \u003cp\u003e10.4.1 Cavity Effect 380\u003c\/p\u003e \u003cp\u003e10.4.2 Properties of Cavity-Enhanced Green VCSELs 381\u003c\/p\u003e \u003cp\u003e10.5 Dual-Wavelength Lasing Based on QD-in-QW Active Structure 384\u003c\/p\u003e \u003cp\u003e10.5.1 Characteristics of QD-in-QW Structure 384\u003c\/p\u003e \u003cp\u003e10.5.2 Lasing Characteristics of VCSELs 386\u003c\/p\u003e \u003cp\u003e10.6 Blue VCSELs with Different Lateral Confinements 386\u003c\/p\u003e \u003cp\u003e10.6.1 Design of Index-Guided Structure 386\u003c\/p\u003e \u003cp\u003e10.6.2 Emission Properties of VCSELs with Lateral Confinement 388\u003c\/p\u003e \u003cp\u003e10.7 Summary 389\u003c\/p\u003e \u003cp\u003eReferences 390\u003c\/p\u003e \u003cp\u003e\u003cb\u003e11 Integration of 2DMaterials with Nitrides for Novel Electronic and Optoelectronic Applications \u003c\/b\u003e\u003cb\u003e397\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eFilippo Giannazzo, Emanuela Schilir\u003c\/i\u003e\u003ci\u003eò, Raffaella Lo Nigro, Pawel Prystawko, and Yvon Cordier\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e11.1 Introduction 397\u003c\/p\u003e \u003cp\u003e11.2 Fabrication of 2D Material Heterostructures with Nitride Semiconductors 400\u003c\/p\u003e \u003cp\u003e11.2.1 Transfer of 2D Materials Grown on a Foreign Substrate 400\u003c\/p\u003e \u003cp\u003e11.2.2 Direct Growth of 2D Materials on Group III-Nitrides 403\u003c\/p\u003e \u003cp\u003e11.2.3 2D Materials as Templates for the Growth of Nitride Semiconductor Films 407\u003c\/p\u003e \u003cp\u003e11.3 Electronic Devices Based on 2D Materials\/GaN Heterojunctions 413\u003c\/p\u003e \u003cp\u003e11.3.1 Band-to-band Tunneling Diodes Based on MoS\u003csub\u003e2\u003c\/sub\u003e\/GaN Heterojunctions 413\u003c\/p\u003e \u003cp\u003e11.3.2 Hot Electron Transistors with Graphene Base and Al(Ga)N\/GaN Emitter 414\u003c\/p\u003e \u003cp\u003e11.4 Optoelectronic Devices Based on 2D Material Junctions with GaN 421\u003c\/p\u003e \u003cp\u003e11.4.1 GaN LEDs with Graphene-Transparent Conductive Electrodes 421\u003c\/p\u003e \u003cp\u003e11.4.2 MoS\u003csub\u003e2\u003c\/sub\u003e\/GaN Deep UV Photodetectors 427\u003c\/p\u003e \u003cp\u003e11.5 Applications of Graphene for Thermal Management in GaN HEMTs 428\u003c\/p\u003e \u003cp\u003e11.6 Summary 431\u003c\/p\u003e \u003cp\u003eAcknowledgments 431\u003c\/p\u003e \u003cp\u003eReferences 432\u003c\/p\u003e \u003cp\u003eIndex 439\u003c\/p\u003e","brand":"Wiley-VCH Verlag 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