{"product_id":"field-effect-transistors-a-comprehensive-overview-9781119155492","title":"Field Effect Transistors A Comprehensive Overview","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003e\u003cp\u003e\u003cb\u003eThis book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices.\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eThis bookprovides an overview of Field Effect Transistors (FETs)by discussing the basic principles ofFETs andexploring the latest technological developments in the field.It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book containssix chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variationsandnovel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewa\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003e\u003c\/p\u003e\u003cp\u003eIntroduction xi\u003c\/p\u003e \u003cp\u003e\u003cb\u003e1 Electronic Materials and Charge Transport 1\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e1.1 Wave\/Particle Electrons in Solids 1\u003c\/p\u003e \u003cp\u003e1.1.1 Quantum Description of Electrons 3\u003c\/p\u003e \u003cp\u003e1.1.2 Band Diagram and Effective-Mass Formalism 6\u003c\/p\u003e \u003cp\u003e1.1.3 Density of States Function 7\u003c\/p\u003e \u003cp\u003e1.1.4 Conduction and Valence Bands 8\u003c\/p\u003e \u003cp\u003e1.1.5 Band Diagram and Free Charge Carriers 10\u003c\/p\u003e \u003cp\u003e1.1.6 Supplementary Notes on Band Diagram 11\u003c\/p\u003e \u003cp\u003e1.1.7 Bond Model 14\u003c\/p\u003e \u003cp\u003e1.2 Electrons, Holes, and Doping in Semiconductors 14\u003c\/p\u003e \u003cp\u003e1.2.1 Electrons and Holes 14\u003c\/p\u003e \u003cp\u003e1.2.2 Doping 18\u003c\/p\u003e \u003cp\u003e1.2.3 Calculation of Ionization Energies in Semiconductors 24\u003c\/p\u003e \u003cp\u003e1.3 Thermal-Equilibrium Statistics 25\u003c\/p\u003e \u003cp\u003e1.3.1 Fermi–Dirac Statistics 25\u003c\/p\u003e \u003cp\u003e1.3.2 Maxwell–Boltzmann Statistics 27\u003c\/p\u003e \u003cp\u003e1.3.3 Calculating Electron and Hole Concentration in Nondegenerate Semiconductors 29\u003c\/p\u003e \u003cp\u003e1.3.4 Mass Action Law 31\u003c\/p\u003e \u003cp\u003e1.3.5 Calculation of Electron and Hole Concentration in a Degenerate Semiconductor 33\u003c\/p\u003e \u003cp\u003e1.3.6 Quasi-Fermi Levels 35\u003c\/p\u003e \u003cp\u003e1.3.7 Statistics of Dopant Activation Process 35\u003c\/p\u003e \u003cp\u003e1.4 Charge-Carrier Transport in Semiconductors 37\u003c\/p\u003e \u003cp\u003e1.4.1 Current-Continuity Equation 39\u003c\/p\u003e \u003cp\u003e1.4.2 Drift–Diffusion Formalism 40\u003c\/p\u003e \u003cp\u003e1.4.3 Characterization of Low Electric-Field Transport Parameters 53\u003c\/p\u003e \u003cp\u003e1.4.4 High Electric-Field Drift Transport 54\u003c\/p\u003e \u003cp\u003e1.4.5 Thermionic and Field Emission 61\u003c\/p\u003e \u003cp\u003e1.5 Breakdown in Semiconductors 66\u003c\/p\u003e \u003cp\u003e1.6 Crystallinity and Semiconductor Materials 69\u003c\/p\u003e \u003cp\u003e1.6.1 Bravais Lattices 71\u003c\/p\u003e \u003cp\u003e1.6.2 Strain and Techniques of Epitaxy 78\u003c\/p\u003e \u003cp\u003e1.7 Quantum Transport Phenomena and Scattering Mechanisms in Semiconductors 89\u003c\/p\u003e \u003cp\u003e1.7.1 Quantum Phenomena in Carrier Transport: A Snapshot 90\u003c\/p\u003e \u003cp\u003e1.7.2 Drude’s Model: A Close-UP 91\u003c\/p\u003e \u003cp\u003e1.7.3 Major Scattering Processes 95\u003c\/p\u003e \u003cp\u003eFurther Reading 109\u003c\/p\u003e \u003cp\u003eSolid-State Theory 109\u003c\/p\u003e \u003cp\u003ePhysics of Semiconductor Devices 109\u003c\/p\u003e \u003cp\u003eSemiconductor Materials and Heterostructures 109\u003c\/p\u003e \u003cp\u003eProblems 110\u003c\/p\u003e \u003cp\u003eAppendix 1.A Derivation of Fermi–Dirac Statistics 111\u003c\/p\u003e \u003cp\u003eFurther Reading 114\u003c\/p\u003e \u003cp\u003eAppendix 1.B Derivation of Einstein Relationship in Degenerate Semiconductors 114\u003c\/p\u003e \u003cp\u003eFurther Reading 115\u003c\/p\u003e \u003cp\u003eAppendix 1.C Strain Tensor 116\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2 Junctions 119\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e2.1 Contacts Under Thermal Equilibrium 119\u003c\/p\u003e \u003cp\u003e2.2 Metal–Semiconductor Contacts 121\u003c\/p\u003e \u003cp\u003e2.2.1 Band Diagram of an MS Junction 122\u003c\/p\u003e \u003cp\u003e2.2.2 SDA 127\u003c\/p\u003e \u003cp\u003e2.3 P–N Junctions 149\u003c\/p\u003e \u003cp\u003e2.3.1 Thermal-Equilibrium Band Diagram of P–N Junctions 149\u003c\/p\u003e \u003cp\u003e2.3.2 Calculation of Potential across P–N Junctions and SDA 151\u003c\/p\u003e \u003cp\u003e2.4 Metal–Insulator–Semiconductor System 188\u003c\/p\u003e \u003cp\u003e2.4.1 Thermal-Equilibrium Band Diagram of MOS System 189\u003c\/p\u003e \u003cp\u003e2.4.2 Biased MOS System 192\u003c\/p\u003e \u003cp\u003e2.4.3 Threshold-Voltage Adjustment and Calculations 200\u003c\/p\u003e \u003cp\u003e2.4.4 C–V Characteristic of MOS Systems 208\u003c\/p\u003e \u003cp\u003e2.5 Current Conduction in the Presence of Band Discontinuities in Junctions 216\u003c\/p\u003e \u003cp\u003e2.5.1 Thermionic Emission 216\u003c\/p\u003e \u003cp\u003e2.5.2 Field Emission and Thermionic-Field Emission 224\u003c\/p\u003e \u003cp\u003eFurther Reading 227\u003c\/p\u003e \u003cp\u003ePhysics of Semiconductor Devices 227\u003c\/p\u003e \u003cp\u003eProblems 228\u003c\/p\u003e \u003cp\u003eAppendix 2.A Limitations of SDA and the Meaning of Debye Length 229\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3 Traditional Planar MOSFETs: Operation, Modeling, and Technology Scaling 231\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e3.1 Battle of Transistors: MOSFET Versus BJT 232\u003c\/p\u003e \u003cp\u003e3.2 Principles of Operation of MOSFETs and Device Modeling: First-Order Principles 236\u003c\/p\u003e \u003cp\u003e3.2.1 Modeling of the Operation of Long-Channel MOSFET 238\u003c\/p\u003e \u003cp\u003e3.2.2 Modeling of the Operation of Short-Channel MOSFET 250\u003c\/p\u003e \u003cp\u003e3.3 Quantum Confinement and Electrostatics of MOSFET 282\u003c\/p\u003e \u003cp\u003e3.4 Subthreshold Operation of Short-Channel MOSFET 285\u003c\/p\u003e \u003cp\u003e3.5 Limits of Scaling: A Recap 290\u003c\/p\u003e \u003cp\u003eReference 291\u003c\/p\u003e \u003cp\u003eFurther Reading 291\u003c\/p\u003e \u003cp\u003ePhysics of Semiconductor Devices 292\u003c\/p\u003e \u003cp\u003eMicrofabrication Technology and Material Characterization 292\u003c\/p\u003e \u003cp\u003eProblems 292\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4 From Scaling-Driven Technological Variations to Novel Dimensions in MISFETs 295\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e4.1 FinFET, UTBSOI, and Other Multiple-Gate FETs 296\u003c\/p\u003e \u003cp\u003e4.1.1 Quantitative Assessment of the Advantages of SOI and Multiple-Gate MOSFETs 301\u003c\/p\u003e \u003cp\u003e4.1.2 Multiple-Gate MOSFETs: A Complementary Perspective on the Implementation and Physics of Operation 306\u003c\/p\u003e \u003cp\u003e4.1.3 Strain Engineering: From Bulk to Multiple-Gate MOSFETs 313\u003c\/p\u003e \u003cp\u003e4.1.4 Limitations of the Introduction of III–V Channels to Multiple-Gate and Other Modern CMOS Technologies 320\u003c\/p\u003e \u003cp\u003e4.2 Velocity-Modulation Transistor 321\u003c\/p\u003e \u003cp\u003e4.2.1 VMT: Basic Principles of Operation 322\u003c\/p\u003e \u003cp\u003e4.2.2 Real-Space Transfer: Speed and Functionality 325\u003c\/p\u003e \u003cp\u003e4.3 Resonant-Gate and Resonant-Channel Transistors 333\u003c\/p\u003e \u003cp\u003e4.3.1 Resonant-Gate Transistor: Principles of Operation 336\u003c\/p\u003e \u003cp\u003e4.3.2 Resonant-Channel Transistor: Principles of Operation 343\u003c\/p\u003e \u003cp\u003e4.4 Carbon Nanotube FET and FETs Realized on Other Nanotube and Nanowires 346\u003c\/p\u003e \u003cp\u003e4.4.1 CNFETs versus MOSFETs: Differences in Principles of Operation and Realization 348\u003c\/p\u003e \u003cp\u003e4.4.2 Other Nanotube and Nanowire Transistors 363\u003c\/p\u003e \u003cp\u003e4.5 spinFET 365\u003c\/p\u003e \u003cp\u003e4.5.1 spinFET: Principles of Operation 365\u003c\/p\u003e \u003cp\u003e4.5.2 spinFET: Challenges in Realization 368\u003c\/p\u003e \u003cp\u003eReferences 372\u003c\/p\u003e \u003cp\u003eFurther Reading 372\u003c\/p\u003e \u003cp\u003eProblems 373\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5 Heterojunction FETs 375\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e5.1 Challenges and Rewards of Heteroepitaxy 377\u003c\/p\u003e \u003cp\u003e5.1.1 Lattice Matching and the Substrate Challenge 379\u003c\/p\u003e \u003cp\u003e5.1.2 Properties of a Few Famous Nonpolar Heterostructures: A Brief Visit 380\u003c\/p\u003e \u003cp\u003e5.2 Quantum Phenomena in Semiconductor Heterostructures 385\u003c\/p\u003e \u003cp\u003e5.2.1 Electron Behavior in a Triangular Quantum Well 389\u003c\/p\u003e \u003cp\u003e5.2.2 Subbands and Two-Dimensional Electron Gas 391\u003c\/p\u003e \u003cp\u003e5.2.3 Semiconductor Heterojunctions and Self-Consistent Evaluation 392\u003c\/p\u003e \u003cp\u003e5.2.4 Modulation Doping 394\u003c\/p\u003e \u003cp\u003e5.3 HFET: Brief Exposé of Design Intricacies 400\u003c\/p\u003e \u003cp\u003e5.3.1 Deep Donors and Modulation Doping 407\u003c\/p\u003e \u003cp\u003e5.3.2 Threshold-Voltage Calculation in HFET 409\u003c\/p\u003e \u003cp\u003e5.3.3 HFET: A Brief Visit to Microfabrication Challenges 414\u003c\/p\u003e \u003cp\u003e5.3.4 Hot Electron Applications Among HFETs 416\u003c\/p\u003e \u003cp\u003e5.4 Polar III-Nitride HFET 417\u003c\/p\u003e \u003cp\u003e5.4.1 Polarization Among III-Nitride Heterostructures 418\u003c\/p\u003e \u003cp\u003e5.4.2 Subband Energy Levels and 2DEG Characteristics of\u003c\/p\u003e \u003cp\u003ePolar AlGaN\/GaN Heterojunctions 422\u003c\/p\u003e \u003cp\u003eReferences 427\u003c\/p\u003e \u003cp\u003eFurther Reading 427\u003c\/p\u003e \u003cp\u003ePhysics of Heterostructures and High-Speed Transistors 427\u003c\/p\u003e \u003cp\u003eMaterial Properties and Processing of Semiconductor Materials and Heterostructures 427\u003c\/p\u003e \u003cp\u003eProblems 428\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6 FETs at Molecular Scales 429\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e6.1 FET: A Change of Paradigm 430\u003c\/p\u003e \u003cp\u003e6.2 Resistance Redefined 431\u003c\/p\u003e \u003cp\u003e6.3 Evaluation of Current–Voltage Characteristics of a Single Energy-Level Channel FET 440\u003c\/p\u003e \u003cp\u003e6.4 From Current Conduction in Single Energy-Level Channels to Definition of Conductance in Macroscale Conductors 444\u003c\/p\u003e \u003cp\u003eFurther Reading 448\u003c\/p\u003e \u003cp\u003eIndex 449\u003c\/p\u003e","brand":"John Wiley \u0026 Sons Inc","offers":[{"title":"Default Title","offer_id":49406997922135,"sku":"9781119155492","price":103.46,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0817\/1739\/5799\/files\/9781119155492.jpg?v=1730497832","url":"https:\/\/bookcurl.com\/products\/field-effect-transistors-a-comprehensive-overview-9781119155492","provider":"Book Curl","version":"1.0","type":"link"}