{"product_id":"advanced-ultra-lowpower-semiconductor-devices-9781394166411","title":"Advanced Ultra LowPower Semiconductor Devices","description":"\u003cb\u003eBook Synopsis\u003c\/b\u003e\u003cbr\u003e\u003cb\u003eADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES\u003c\/b\u003e \u003cp\u003eWritten and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors.  \u003c\/p\u003e\u003cp\u003eThis outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. \u003c\/p\u003e\u003cp\u003eBringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of\u003cbr\u003e\u003cbr\u003e\u003cb\u003eTable of Contents\u003c\/b\u003e\u003cbr\u003e\u003c\/p\u003e\u003cp\u003ePreface xi\u003c\/p\u003e \u003cp\u003e\u003cb\u003e1 Subthreshold Transistors: Concept and Technology 1\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eBall Mukund Mani Tripathi\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e1.1 Introduction 2\u003c\/p\u003e \u003cp\u003e1.2 Major Sources of Leakage and Possible Methods of Prevention 2\u003c\/p\u003e \u003cp\u003e1.3 Possibilities and Challenges 12\u003c\/p\u003e \u003cp\u003e1.4 Conclusions 21\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2 Introduction to Conventional MOSFET and Advanced Transistor TFET 29\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eM. Saravanan, K. Ramkumar, Eswaran Parthasarathy, J. Ajayan and S. Sreejith\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e2.1 Introduction 30\u003c\/p\u003e \u003cp\u003e2.2 Device Structure 30\u003c\/p\u003e \u003cp\u003e2.3 TFET Principle of Operation 31\u003c\/p\u003e \u003cp\u003e2.4 Material Characterization 33\u003c\/p\u003e \u003cp\u003e2.5 Characteristics of TFET 35\u003c\/p\u003e \u003cp\u003e2.6 Comparison of OFF-State Characteristics 37\u003c\/p\u003e \u003cp\u003e2.7 Phonon Scattering's Impact 39\u003c\/p\u003e \u003cp\u003e2.8 ON-State Performance Comparison 40\u003c\/p\u003e \u003cp\u003e2.9 Performance Analysis Based on Intrinsic Delay 40\u003c\/p\u003e \u003cp\u003e2.10 Bandgap's Effect on Device Performance 41\u003c\/p\u003e \u003cp\u003e2.11 MOSFET and TFET Scaling Behaviour 43\u003c\/p\u003e \u003cp\u003e2.12 Surface Potential of an N-TFET and N-MOSFET 45\u003c\/p\u003e \u003cp\u003e2.13 Professional Advantages of TFET over MOSFET 46\u003c\/p\u003e \u003cp\u003e2.14 Conclusion 46\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3 Operation Principle and Fabrication of TFET 51\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eMekonnen Getnet Yirak and Rishu Chaujar\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e3.1 Introduction 52\u003c\/p\u003e \u003cp\u003e3.2 Planar MOSFET's Limitations 54\u003c\/p\u003e \u003cp\u003e3.3 Demand for Low Power Operation 55\u003c\/p\u003e \u003cp\u003e3.4 TFET: Operation Principle of TFET 56\u003c\/p\u003e \u003cp\u003e3.5 TFET: Recent Design Issues in TFET 63\u003c\/p\u003e \u003cp\u003e3.6 TFET: Modeling and Application 65\u003c\/p\u003e \u003cp\u003e3.7 TFET: Fabrication Perspective 68\u003c\/p\u003e \u003cp\u003e3.8 TFET: Applications and Future of Low-Power Electronics 70\u003c\/p\u003e \u003cp\u003e3.9 Expected Challenges in Replacing MOSFET with TFET 70\u003c\/p\u003e \u003cp\u003e3.10 Conclusion 71\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4 Mathematical Modeling of TFET and Its Future Applications: Ultra Low-Power SRAM Circuit and III-IV TFET 77\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eNayana G H and P. Vimala\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e4.1 Introduction 78\u003c\/p\u003e \u003cp\u003e4.2 Modeling Approaches 78\u003c\/p\u003e \u003cp\u003e4.3 Structure 81\u003c\/p\u003e \u003cp\u003e4.4 Applications of Tunnel Field-Effect Transistor 83\u003c\/p\u003e \u003cp\u003e4.5 Road Ahead for Tunnel Field Effect Transistors 87\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET 91\u003c\/b\u003e\u003cbr\u003e\u003ci\u003ePrabhat Singh and Dharmendra Singh Yadav\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e5.1 Introduction 92\u003c\/p\u003e \u003cp\u003e5.2 Simulated Device Structure and Parameters 93\u003c\/p\u003e \u003cp\u003e5.3 DC Characteristics 93\u003c\/p\u003e \u003cp\u003e5.4 Analysis of Analog\/RF FOMs 98\u003c\/p\u003e \u003cp\u003e5.5 Conclusion 101\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure 105\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eSusmitha Kothapalli, Zohmingliana and Brinda Bhowmick\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e6.1 Introduction 106\u003c\/p\u003e \u003cp\u003e6.2 Study of Different TFET Structures 106\u003c\/p\u003e \u003cp\u003e6.3 Proposed Structure 109\u003c\/p\u003e \u003cp\u003e6.4 Results and Discussion 110\u003c\/p\u003e \u003cp\u003e6.5 Conclusion 127\u003c\/p\u003e \u003cp\u003e6.6 Future Scope 128\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7 State of the Art Tunnel FETs for Low Power Memory Applications 131\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eArun A. V., Sreelekshmi P. S. and Jobymol Jacob\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e7.1 Static Random Access Memory 131\u003c\/p\u003e \u003cp\u003e7.2 Performance Parameters of SRAM Cell 134\u003c\/p\u003e \u003cp\u003e7.3 TFET-Based SRAM Cell Design 135\u003c\/p\u003e \u003cp\u003e7.4 Conclusion 159\u003c\/p\u003e \u003cp\u003e\u003cb\u003e8 Epitaxial Layer-Based Si\/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight 165\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eAbhishek Acharya, Sourabh Panwar, Shobhit Srivastava and Shashidhara M.\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e8.1 Fundamental Limitation of CMOS: Tunnel FETs 165\u003c\/p\u003e \u003cp\u003e8.2 Working Principle of Tunnel FET 168\u003c\/p\u003e \u003cp\u003e8.3 Point and Line TFETs: Tunneling Direction 169\u003c\/p\u003e \u003cp\u003e8.4 Perspective of Line TFETs 170\u003c\/p\u003e \u003cp\u003e8.5 Analytical Models of Line TFETs 176\u003c\/p\u003e \u003cp\u003e8.6 Line TFETs for Analog \u0026amp; Digital Circuits Design 178\u003c\/p\u003e \u003cp\u003e8.7 Other Steep Slope Devices 179\u003c\/p\u003e \u003cp\u003e8.8 Conclusion 181\u003c\/p\u003e \u003cp\u003e\u003cb\u003e9 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors 187\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eSresta Valasa, Shubham Tayal and Laxman Raju Thoutam\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e9.1 Introduction 188\u003c\/p\u003e \u003cp\u003e9.2 Device Simulation Details 190\u003c\/p\u003e \u003cp\u003e9.3 Results and Discussion 192\u003c\/p\u003e \u003cp\u003e9.4 Conclusion 201\u003c\/p\u003e \u003cp\u003e\u003cb\u003e10 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application 207\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eShelja Kaushal\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e10.1 Introduction 208\u003c\/p\u003e \u003cp\u003e10.2 NCFET and Its Design Constraints 209\u003c\/p\u003e \u003cp\u003e10.3 NCFET for Low-Power Applications 216\u003c\/p\u003e \u003cp\u003e10.4 Summary 226\u003c\/p\u003e \u003cp\u003e\u003cb\u003e11 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film\u003c\/b\u003e Transistor Synapses 235\u003cbr\u003e\u003ci\u003eSourav De, Maximilian Lederer, Yannick Raffel, David Lehninger, Sunanda Thunder, Michael P.M. Jank, Tarek Ali and Thomas Kämpfe\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e11.1 Introduction 236\u003c\/p\u003e \u003cp\u003e11.2 Ferroelectricity in Hafnium Oxide 241x Contents\u003c\/p\u003e \u003cp\u003e11.3 IGZO Based Ferroelectric Thin Film Transistor 245\u003c\/p\u003e \u003cp\u003e11.4 Applications in Neural Networks 249\u003c\/p\u003e \u003cp\u003e11.5 Conclusion 250\u003c\/p\u003e \u003cp\u003e\u003cb\u003e12 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges 261\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eY. Alekhya, Umakanta Nanda and Chandan Kumar Pandey\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e12.1 Introduction 261\u003c\/p\u003e \u003cp\u003e12.2 Literature Survey 263\u003c\/p\u003e \u003cp\u003e12.3 Impact of Radiation Effects on Sram Cells 266\u003c\/p\u003e \u003cp\u003e12.4 Results and Discussion 267\u003c\/p\u003e \u003cp\u003e12.5 Conclusion 274\u003c\/p\u003e \u003cp\u003e\u003cb\u003e13 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors 279\u003c\/b\u003e\u003cbr\u003e\u003ci\u003eYoung Suh Song, Shiromani Balmukund Rahi, Shahnaz Kossar, Abhishek Kumar Upadhyay, Shubham Tayal, Chandan Kumar Pandey and Biswajit Jena\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e13.1 Introduction 280\u003c\/p\u003e \u003cp\u003e13.2 Challenges in Future Ultra-Low Power Semiconductors 282\u003c\/p\u003e \u003cp\u003e13.3 Conclusion 286\u003c\/p\u003e \u003cp\u003eReferences 288\u003c\/p\u003e \u003cp\u003eIndex 293\u003c\/p\u003e","brand":"John Wiley \u0026 Sons Inc","offers":[{"title":"Default Title","offer_id":49529238946135,"sku":"9781394166411","price":140.4,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0817\/1739\/5799\/files\/9781394166411.jpg?v=1731874836","url":"https:\/\/bookcurl.com\/products\/advanced-ultra-lowpower-semiconductor-devices-9781394166411","provider":"Book Curl","version":"1.0","type":"link"}